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NPN Type
Elektronische Bauelemente
Plastic Encapsulate Transistors
Collector current
O 3.1± 0.1
1 2 3
2SD669A : 160 V
Operating and storage junction temperature range 1: Emitter
TJ,Tstg: -55℃ to +150 ℃ 2: Collector
3: Base
2SD669 120
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA , IB=0 V
2SD669A 160
Collector-emitter breakdown voltage V(BR)EBO
IE= 1mA, Ic=0 5 V
Rank B C D
2SD 669 60 - 120 100 - 200 160 - 320
2SD669A 60 - 120 100 - 200 ----
3
(13.3 V, 1.5 A)
0.3
DC Operation(TC = 25°C)
10 0.1
0.03
0.01
0 50 100 150 1 3 10 30 100 300
Case temperature TC (°C) Collector to emitter voltage VCE (V)
0.8
Collector current IC (A)
3.0 P
C 100
=
2.5 20
0.6 W 50
Ta = 75°C
2.0
–25
25
1.5 20
0.4
10
1.0
5
0.2 0.5 mA
2
IB = 0
1
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0
Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)
250 1.0
25
200 0.8
100 0.4
=7
25
C
T
50 VCE = 5 V 0.2
1 0
1 3 10 30 100 300 1,000 3,000 1 3 10 30 100 300 1,000
Collector current IC (mA) Collector current IC (mA)
240
IC = 10 IB VCE = 5 V
25°C
0.8 TC = – 160
25
0.6 75 120
0.4 80
0.2 40
0 0
1 3 10 30 100 300 1,000 10 30 100 300 1,000
Collector current IC (mA) Collector current IC (mA)
f = 1 MHz
100 IE = 0
50
20
10
2
1 2 5 10 20 50 100
Collector to base voltage VCB (V)