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IRF6215
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = -150V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.29Ω
l P-Channel G
l Fully Avalanche Rated
ID = -13A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
5/13/98
IRF6215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.20
––– V/°C Reference to 25°C, ID = 1mA
––– –––0.29 VGS = -10V, ID = -6.6A , TJ = 25°C
RDS(on) Static Drain-to-Source On-Resistance Ω
––– –––0.58 VGS = -10V, ID = -6.6A , TJ = 150°C
VGS(th) Gate Threshold Voltage -2.0 –––-4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.6 ––– ––– S VDS = -50V, ID = -6.6A
––– ––– -25 VDS = -150V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– –––-250 VDS = -120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– –––-100 VGS = -20V
Qg Total Gate Charge ––– ––– 66 ID = -6.6A
Qgs Gate-to-Source Charge ––– ––– 8.1 nC VDS = -120V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 35 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = -75V
tr Rise Time ––– 36 ––– ID = -6.6A
ns
td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.8Ω
tf Fall Time ––– 37 ––– RD = 12Ω, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V
trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = -6.6A
Q rr Reverse RecoveryCharge ––– 1.2 1.7 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
Starting TJ = 25°C, L = 14mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -6.6A. (See Figure 12)
IRF6215
100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V
-ID , D rain-to-S ource C urrent (A )
- 7.0V
10 10
-4 .5V
-4 .5 V 20 µ s P U L S E W ID TH 2 0µ s P U LS E W ID T H
TJc = 25 °C A TJC = 1 75 °C
1 1 A
1 10 100 1 10 100
-VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V )
100 2.5
I D = -11 A
R D S (on) , Drain-to-S ource O n Resistance
-I D , D rain-to-S ource C urrent (A)
2.0
TJ = 2 5 °C
(N orm alized)
1.5
T J = 1 7 5 °C
10
1.0
0.5
V D S = -5 0 V
2 0 µ s P U L S E W ID T H VG S = -1 0V
1 0.0 A
4 5 6 7 8 9 10
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
2000 20
V GS = 0V , f = 1M H z I D = -6 .6 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = -12 0V
V D S = -75 V
C iss
1200 12
C oss
800 8
C rss
400 4
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 20 40 60 80
-VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC )
100 100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
-I S D , Reverse D rain Current (A )
10µ s
-I D , D rain C urrent (A)
TJ = 17 5 °C
10
T J = 25 °C
10 100µ s
1m s
T C = 25 °C
T J = 17 5°C
V G S = 0V S ing le P u lse 10m s
0.1 A 1 A
0.2 0.6 1.0 1.4 1.8 1 10 100 1000
-VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V )
15 RD
VDS
VGS
12 D.U.T.
RG
-I D , Drain Current (A)
-
+ VDD
9
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
800
VDS L ID
400
15V
200
0 A
IAS 25 50 75 100 125 150 175
S tarting T J , J unc tion T em perature (°C )
tp
V (BR)DSS
50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS
VGS
VG
-3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRF6215
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
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http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/