AOL1448

30V N-Channel MOSFET

General Description Product Summary

The AOL1448 uses advanced trench technology to VDS 30V

provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 36A
This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) < 9.5mΩ
general purpose applications.
RDS(ON) (at VGS = 4.5V) < 14mΩ

100% UIS Tested

100% Rg Tested

UltraSO-8TM D
Top View Bottom View

G
G S
G S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 36
ID
Current G TC=100°C 28 A
C
Pulsed Drain Current IDM 90
Continuous Drain TA=25°C 11
IDSM A
Current TA=70°C 9
Avalanche Current C IAS, IAR 20 A
Avalanche energy L=0.1mH C EAS, EAR 20 mJ
TC=25°C 30
PD W
Power Dissipation B TC=100°C 15
TA=25°C 2
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 48 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.5 5 °C/W

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 AOL1448

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.7 2.2 V
ID(ON) On state drain current VGS=10V, VDS=5V 90 A
VGS=10V, ID=20A 7.5 9.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11.5 14
VGS=4.5V, ID=20A 11 14 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 43 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 770 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 240 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.4 0.8 1.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 14.8 18 nC
Qg(4.5V) Total Gate Charge 7.1 9 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2.2 nC
Qgd Gate Drain Charge 3.1 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 11 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 23 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOL1448

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
10V 6V
VDS=5V
80 50
4.5V
7V
40
60
4V
ID (A)

ID(A)
30
40
3.5V 20 125°C

20 10 25°C
VGS=3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

16 2

Normalized On-Resistance
14 1.8
VGS=10V
VGS=4.5V ID=20A
12 1.6
Ω)
RDS(ON) (mΩ

17
10 1.4 5
2
8 1.2
VGS=4.5V
10
6 VGS=10V 1 ID=20A

4 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

35 1.0E+02
ID=20A
30 1.0E+01
40
25 1.0E+00
Ω)
RDS(ON) (mΩ

20 1.0E-01 125°C
IS (A)

125°C

15 1.0E-02
25°C
10 1.0E-03

5 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOL1448

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=20A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400 Coss

2
200

Crss
0 0
0 4 8 12 16 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 10µs 160 TJ(Max)=175°C

RDS(ON) TC=25°C
100µs
ID (Amps)

Power (W)

10.0 120 17
1ms
DC 5
10ms
1.0 80 2
10
TJ(Max)=175°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18Junction-to-
Figure 10: Single Pulse Power Rating
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=5°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOL1448

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 35
TA=25°C
IAR (A) Peak Avalanche Current

TA=150°C 30
TA=100°C

Power Dissipation (W)

25

20
10 TA=125°C
15

10

1 0
1 10 100 1000 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ TCASE (°
°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

40 10000

TA=25°C
30 1000
Current rating ID(A)

17
Power (W)

100
5
20
2
10
10 10

0 1
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000
TCASE (°
°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOL1448

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 4: Nov 2011 www.aosmd.com Page 6 of 6