Report Group Analog IC Design

Learn about Comparator

Student: Nguyễn Văn Mười

Class : Điện Tử 10-K51
 Learn about Comparator
Content
I. Definition
II. Structure of Comparator
III. Blocks and functions
IV. Analysis behavior
V. Some devices small
VI. Remarks and
problem
I. Definition
A comparator is a device that compares the voltage of
the input signal (analog) with the reference voltage (Vref)
and outputs either a high or low signal according to
whether the input signal voltage is higher or lower.
 I. Definition
 In fact , because the gain is not infinity then
Its output is defined as follows :
1. Definition
 Characterization.
- The gain of comparator is very high.
- The input impedance is very high
- The output impedance is low.
II. Structure of Comparator
 III. Blocks and functions
 1. Different Pair block
 2. The amplifier output block
 3. The on/ off block
 4.The hysteresis block
 5. The output buffer.
 1.Different pair block.

The input different pair

stage consist of the
transistors XM3 and XM4
with current mirror
(XM1, XM2) are biased
transistor XM7.
 Gain
Adif = gm3 * ( ro3 // ro1 )
= gm4 * (ro4 // ro2 )
 2. The amplifier output
.
Transistor XM5 is
common-source amplifier
And biasing by XM6 .
 The gain :
Acs = gm5 *(ro5 // ro6 )
 3. ON/OFF block
 The block ON/OFF consist of Analog Inverter X3
and two transistor XM9, XM10.
Function :
 Reduce power consumption when Comparator is
idle.
 When ON : transistor XM9 and XM10 are cutoff ,
the comparator operate normal.
 When OFF: transistor XM9 and XM10 operate in
saturation .Therefore , XM3 and the output are
pulled down to 0v.
 3. ON/OFF Block
 When OFF: the power consumption is in
XM9,XM10,XM5 and XM6.
 The size of Two transistor XM9,XM10
are smaller than XM1,XM2 and when off
current ID of transistor XM5 very small
therefore the power dissipation is small.
 4.The hysteresis
 The Hysteresis consist of two
transistors XM11, XM12.
 The signal is feedback from the
output with or without hysteresis
on pin NOHYST through
a ANOR circuit.
 With hysteresis ,the output is not affected even if
the input signal contains a certain amount of noise.
 Hysteresis is designed into most comparators,
usually with a value of 5mV to 10mV.
 4.The hysteresis
Without hysteresis

With hysteresis
 5. The output buffer
 Transistor XM8 operate
as a capacitor ,it’s action
is output filter.
 The capacitance :
C = Cox*(W*L)
= 3.9*8.86e-12 /(12e-9 )
*(40*40)*e-12
=4.6pF
 5. The output buffer
 Two inverters X1, X2 to increase the slope of
output signal.
without inverter X1,X2:

With inverter X1,X2:

 1V. Analysis Behavior
1) Large Signal behavior.
◦ Bias point analysis
◦ Different pair
◦ Current –mirror
◦ Common-source stage output amplifier
2) Small Signal behavior
◦ Bias point analysis
◦ Different pair
◦ Current –mirror
◦ Common-source stage output amplifier
◦ Hysteresis
 1. Large signal behavior
 Bias point analysis
Transistor XM7 has the parameter same XM6
Because the gate and body are shorted then:
VT = VT0 = -1.0169+DVTP (in library )
= - 0.8869 V
with the gate-source and gate-drain voltages are
higher than VT , XM7 and XM6 are cutoff.
in this report , we use the bias with V = 3 V.
Vpbias = 0 V.
Vgs7 = Vpbias - V = -3 V < VT
 1. Large signal behavior
 Bias point analysis

 In simulation of VD7 with Vbias =0v

Vgd7 < VT
XM7 is operate in triode region.
ID7 = = - 23 µA

With Cox = ε / toxp =3.9*8.86e-12 /(12*e-9 )

= 2.88 e-3 F/m2 .
And µp = 450e-4 m2 /V.s
 1. Large signal behavior

 Current- mirror (XM1and XM2)

ID1 = ID2(W/L)XM1/(W/L)XM2 = ID2
=> ID1 = ID2 = ID7 /2 = 11.5µA
Iout = ID2 =11.5µA
Rout = r02 = 1/(λID2 )
with r01 =r02 = L1 *|dXd /dVDS|-1 /ID1 = 43.5 MΩ
=> Rout =43.5M Ω
 1. Large signal behavior
 Differential pair(XM3,XM4)
VT (PMOS) = VT0(PMOS) = -0.8869 V
With VD7 simulation in bias point, and VG of
XM3 is 1.5V => VGS3 < VT

since VD3 ,sig11 in simulation => VGD3 > VT

=> XM3 operates in saturation
 1. Large signal behavior

 Differential pair(XM3,XM4)
Drain current:
ID3 = ID4 = ID1 = 11.5µA
Output resistance:
ro3 =ro4 = L3 * |dXd /dVds |-1 /ID3 =8.7MΩ
 1. Large signal behavior
 Common-source stage output amplifier
VGS6 = -3 V .Coxp = εox/toxp = 2.88e-3 F/m2
And choose µp = 450e-4 m2 /V.s
When active (saturation):
Drain current:
ID6 = 0.5µp Cox *(W/L)*(VGS - VT )2
= 43.4µA
=> ID5 = ID6 = 43.4µA
 2. Small signal behavior
 Different pair
Transconductance:

gm3 =gm4 = = 122µA/V

with Cox =2.88e-3 F/m2 and µp =450e-4 m2/V.s

Adif = -gm3 * ( ro3 // ro1 ) = - 884.5

 2. Small signal behavior
Common-source stage output amplifier
 r06 = L6 /ID6 *(dXd /dVDS )-1 = 11.5MΩ
 r05 = L5 /ID5*(dXd /dVDS )-1 = 11.5MΩ
Transconductance:

 gm5 = = 52.6e-6 A/V

 Acs = -gm5 *(ro5 // ro6 ) = -302

 2. Small signal behavior
 The gain voltage of comparator:
◦ Acomp = Adiff *Acs ≈ 267000
 2. Small signal behavior
 Hysteresis
◦ When Hysteresis is off (VNOHYST = 3v)
◦ => XM12 always cutoff regardless Vout =3V or
0V
 2. Small signal behavior
 When hysteresis is on
 Assume the model hysteresis external Comparator
is show in figure below:

With R2 is resistance of XM11 serial XM12

And R1 is output resistance of XM3.
 2. Small signal behavior
 Hysteresis
VTH+ = VN +(VoutHigh - VN )*R1/(R1+R2)
VTH- =VN + (VoutLow -VN )*R1/(R1+R2)
R1 = r03 = 8.7MΩ
 Because r ~ L and L12 << L11 we can ignore XM12
when considering the effect of XM11 .
=> R2 ≈ r011 = 4.9GΩ
(with Coxn = εox/toxn = 2.66e-3 F/m2
And choose µn = 800e-4 m2 /V.s)
 2. Small signal behavior
• Hysteresis
Therefore :
VTH+ = 1.5027V
VTH- = 1.4973V

=> Vhysteresis = VTH+ - VTH- = 5.4e-3 V

 V. Some devices small
a. The capacitor XM8
Transistor XM8 is operated as a capacitor,
effects is a filter sensitive with the
frequency of signal input.
 V. Some devices small
 The capacitor XM8
eg. vn n 0 1.5
vp p 0 pwl (10u 1.4 10.2u 1.6 10.4u 1.4 10.6 1.6)
With capacitor Without capacitor
 V. Some devices small
b.Inverter
Circuit: Simullation
 VI. Remarks and problem
 Tại sao kích thước của XM7 và 2 transistor XM3,
XM4 lại gần như trái ngược (tỉ số W/L).
 Kích thước của 2 transistor phân cực XM7 và
XM6 là như nhau nhưng MXM7 = 2, còn MXM6 = 1.
Điểm khác nhau khi phân cực của 2 transistor này
là gì , vì em đã thử tăng cho M bằng nhau nhưng
kết quả không thay đổi.
 Tất cả các trasistor chính ( ngoại trừ bộ vi sai , các
khối on/off , XM12 của khối hysteresis và XM8)
thì các transistor còn lại có kích thước W,L như
nhau . Điều này có bắt buộc khi thiết kế một khối
comparator ?
 VI. Remarks and problem
 Trong phần này em đã cố gắng tìm hiểu ,
phân tích kỹ, xong vẫn còn rất nhiều sai sót,
Thầy xem giúp em. Em cảm ơn thầy .