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Zener diode
intrinsic semiconductor is due to
A. holes B. Tunnel diode
Current
gain = 1 + β = 100.
3. The most commonly used semiconductor
material is
A. silicon 6. In p-n-p transistor the current IE has two
components viz. IEP due to injection of
B. germanium holes from p-region to n-region and IE due
to injection of electrons from n-region to p-
C. mixture of silicon and germanium region. Then
D. 1 or 2
20. In a bipolar transistor the barrier potential
Answer: Option B
Explanation: A. 0
A PIN diode has p and n doped regions
separated by intrinsic layer. B. a total of 0.7 V
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D. 0.35 V
Answer: Option C
18. A transistor has two p-n junctions. The
Explanation:
batteries should be connected such that
Since there are two p-n junctions, there
A. both junctions are forward biased are two depletion layers and 0.7 V across
each layer.
B. both junctions are reverse biased
21. Recombination produces new electron-
one junction is forward biased and hole pairs
C.
the other is reverse biased
A. True
D. none of the above
B. False
Answer: Option C
Explanation: Answer: Option B
Explanation:
Emitter-base junction is forward biased
and base collector junction is reverse Due to recombination the number of
biased. electron-hole pairs is reduced.
24. Assertion (A): When a high reverse D. common pulse O/P state
voltage is applied to a p-n junction the Answer: Option B
diode breaks down. Explanation:
Reason (R): High reverse voltage causes
Avalanche effect. It is a characteristics of class B output
stage as the amplifier is biased in cut-off
Both A and R are true and R is region.
A.
correct explanation of A
In class B amplifier, two transistor are C. A is true but R is false
operated in such a way that one is amplify
the half cycle and second is amplify -ve half D. A is false but R is true
cycle.
Answer: Option B
Explanation:
A refers to type semiconductor while R
refers to n type semiconductor. Both A
and R are correct but independent.
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Answer: Option B
Explanation:
This is due to high level of doping.
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A. AB
D. BD B. 2
Answer: Option B
Explanation: C. 3
Answer: Option B
Explanation:
36. Secondary emission is always
decremental. Holes and electrons.
A. True View Answer Discuss in
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B. False
Answer: Option B
Explanation: 39. A potential of 7 V is applied to a silicon
diode. A resistance of 1 K ohm is also in
Sometimes it can be useful also. series with the diode. The current is
A. 7 mA
B. is in conduction band D. 0
Answer: Option B
Explanation:
51. = 42.53
View Answer Discuss in ΔIC = (SICO).ΔICO
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= 42.53 x 19.9 nA
= 0.85 μA.
B. 32 V
C. A is true but R is false
C. insufficient data
D. A is false but R is true
B. 40.91, 0.58 μA
43. Work function of oxide coated cathode is
C. 40.91, 0.58 μA much lower than that of tungsten cathode.
A. True
D. 41.10, 0.39 μA
B. False
Answer: Option A
Explanation: Answer: Option A
Explanation:
SICO = (1 + β).
Therefore emission current from oxide low forward and high reverse
A.
coated cathode is more. resistance
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D. photo diode
Answer: Option C
Explanation: 1. An incremental model of a solid state
device is one which represents the
Maximum power dissipation occurs at
collector junction. ac property of the device at desired
A.
operating point
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dc property of the device at all
B.
operating points
A. 3, 4, 1, 2 C. Tunnel diode
B. 4, 3, 1, 2 D. UJT
Answer: Option D
C. 3, 4, 2, 1 Explanation:
Its output is used to trigger SCR.
D. 4, 3, 2, 1
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Answer: Option D Forum Workspace Report
Explanation:
It is always non-linear.
View Answer Discuss in 5. Calculate the resistivity of n-type
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Density of holes = 5 x 1012 cm-3. Density of
electrons = 8 x 1013 cm-3, mobility of
conduction electron = 2.3 x 104 cm2/ V-sec
3. For an n-channel enhancement type and mobility of holes = 100 cm2/V-sec.
MOSFET, if the source is connected at a A. 0.43 Ω-m
higher potential than that of the bulk
(VSB > 0), the threshold voltage VT of the
MOSFET will B. 0.34 Ω-m
A. remain unchanged
C. 0.42 Ω-m
B. decrease
D. 0.24 Ω-m
Answer: Option B
D. none of the above Explanation:
resistivity decreases with increase Both A and R are true but R is not
C. B.
in temperature a correct explanation of A
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C. 3.5 V
14 From the given circuit below, we can
D. 4.5 V . conclude that.
Answer: Option B
Explanation:
It is used with reverse bias.
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B. BJT is npn
B. PIN diode
C. transistor is faulty
C. Tunnel diode
B. Photo diode
C. Schottky diode
C. PIN diode
D. Photodiode
Answer: Option B
Explanation:
If a potential difference is developed
across a current carrying metal strip when
the strip is placed in transverse magnetic
field.
Hall effect is very weak in metals, but it is
large semiconductors.
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B. amperes
C. volts
D. siemens
Answer: Option D
Explanation:
Its units are the same as the units of
conductance.