DATA SHEET

DATA SHEET

SILICON TRANSISTOR

2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low PACKAGE DIMENSIONS
(Units: mm)
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic. 2.8±0.2

0.4 −0.05
+0.1
+0.1
1.5 0.65 −0.15
FEATURES
• Low Noise and High Gain

0.95
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 2

2.9±0.2
• High Power Gain

0.95
3
1

0.4 −0.05
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

+0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage VCBO 20 V Marking

0.3
Collector to Emitter Voltage VCEO 12 V

0.16 −0.06
+0.1
Emitter to Base Voltage VEBO 3.0 V 1.1 to 1.4
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW

0 to 0.1
Junction Temperature Tj 150
C PIN CONNECTIONS
1. Emitter
Storage Temperature Tstg 65 to +150
C 2. Base
3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25
C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Collector Cutoff Current ICBO 1.0
A VCB = 10 V, IE = 0

Emitter Cutoff Current IEBO 1.0
A VEB = 1.0 V, IC = 0

DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA

Gain Bandwidth Product fT 7 GHz VCE = 10 V, IC = 20 mA

Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain
S21e
2 11.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Noise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz

* Pulse Measurement PW  350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class R23/Q * R24/R * R25/S *

Marking R23 R24 R25

hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification

Document No. P10356EJ5V1DS00 (5th edition)

Date Published March 1997 N
Printed in Japan © 1985
 2SC3356

TYPICAL CHARACTERISTICS (TA = 25
C)

TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs.

AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE
2
PT-Total Power Dissipation-mW

Free Air f = 1.0 MHz

Cre-Feed-back Capacitance-pF
200

100

0.5

0.3
0 50 100 150 0 0.5 1 2 5 10 20 30

TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V

DC CURRENT GAIN vs. INSERTION GAIN vs.

COLLECTOR CURRENT COLLECTOR CURRENT
200 15
VCE = 10 V
|S21e|2-Insertion Gain-dB
100
hFE-DC Current Gain

10

50

5
20
VCE = 10 V
f = 1.0 GHz
10 0
0.5 1 5 10 50 0.5 1 5 10 50 70
IC-Collector Current-mA IC-Collector Current-mA

GAIN BANDWIDTH PRODUCT vs. INSERTION GAIN, MAXIMUM GAIN

COLLECTOR CURRENT vs. FREQUENCY
10
fT-Gain Bandwidth Product-MHz

5.0 Gmax
20
|S21e|2-Insertion Gain-dB
Gmax-Maximum Gain-dB

3.0 |S21e|2
2.0

1.0
10
0.5
0.3
0.2 VCE = 10 V
VCE = 10 V IC = 20 mA
0.1 0
0 0.5 1.0 5.0 10 30 0.1 0.2 0.4 0.6 0.81.0 2
IC-Collector Current-mA f-Frequency-GHz

2
 2SC3356

NOISE FIGURE vs. NOISE FIGURE, FORWARD INSERTION

COLLECTOR CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE
7 18 5
VCE = 10 V f = 1.0 GHz
f = 1.0 GHz IC = 20 mA
6
15 4

|S21e|2-Insertion Gain-dB
|S21e|2
NF-Noise Figure-dB

NF-Noise Figure-dB
5

4 12 3

3
6 2
NF
2
3 1
1

0 0
0.5 1 5 10 50 70 0 2 4 6 8 10
IC-Collector Current-mA VCE-Collector to Emitter Voltage-V

S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz)
S11
 S11
S21
 S21
S12
 S12
S22
 S22

200 0.651 69.3 10.616 129.3 0.051 59.2 0.735 28.1
400 0.467 113.3 6.856 104.4 0.071 54.4 0.550 34.1
600 0.391 139.3 4.852 90.9 0.086 56.0 0.468 33.9
800 0.360 159.2 3.802 81.2 0.101 59.1 0.426 33.6
1000 0.360 176.9 3.098 72.9 0.118 61.0 0.397 35.7
1200 0.361 172.7 2.646 67.3 0.137 63.5 0.373 38.3
1400 0.381 160.3 2.298 59.3 0.157 63.3 0.360 43.0
1600 0.398 152.2 2.071 55.2 0.180 64.1 0.337 45.9
1800 0.423 143.3 1.836 49.0 0.203 63.7 0.320 52.3
2000 0.445 137.6 1.689 46.2 0.220 64.7 0.302 52.2

VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz)
S11
 S11
S21
 S21
S12
 S12
S22
 S22

200 0.339 107.0 16.516 108.7 0.035 66.1 0.459 36.6
400 0.258 147.3 8.928 92.1 0.060 71.0 0.343 32.9
600 0.243 167.7 6.022 83.0 0.085 71.9 0.305 29.9
800 0.242 177.0 4.633 76.2 0.109 72.2 0.284 29.4
1000 0.260 164.5 3.744 69.9 0.136 70.4 0.266 31.7
1200 0.269 157.6 3.193 65.7 0.160 69.9 0.246 35.0
1400 0.294 148.7 2.750 58.8 0.187 66.7 0.233 40.4
1600 0.314 143.1 2.479 55.5 0.212 65.2 0.208 43.6
1800 0.343 136.5 2.185 50.1 0.238 62.4 0.190 50.5
2000 0.367 131.4 2.016 47.8 0.254 61.6 0.173 48.3

3
 2SC3356

S-PARAMETER

S11e, S22e-FREQUENCY 0.11

0.12 0.13 0.14
0.15
0.10 0.39
0.38 0.37 0.36
9 0.35 0.1
CONDITION VCE = 10 V 0.0 0.40 100
90 80 6
1 0.3 0.1
8 0.4 110 70 4

1.0
0.0 2 0.3 7

0.9
200 MHz Step

1.2
0.8
0.4 600 3 0.

1.4
0
07

0.7
12 18
0.

1.6
0.
43 32

0.6
0. 0 0.2

1.8
50
13

0. 31
14 0.4 6

2.0
0

19
0.

0.
4

5
0.
T
EN 0.4

0.2 0
0.4 5

0
0 .0

40
N

0.3
5

) MPO

0
4
0.

( –Z–+–J–XTANCE CO
0.0TOR
0
0.6 3.

0.2
4
RA

0.2
6
0
0.4

1
30
0.0 GENE

15

C
0.8

9
0.3

EA

O
4.0

ER

0.2
3
0.02 TOWARD

ITIV

0.2
1.0

7
0.4

2
S

POS
2.0 GHz

8
6.0

0
REE

1.

20
0.2

DEG

0.23
THS 0.8

0.48

0.27
NG

3 HS TOWLAE OF REFLECTION COEFFCIENT IN

0.6
S11e
WAVELE

10

10
0.01

0.24
0.49

0.26
0.1 0.4

20
0.2
50

0.1

0.2

0.3

0.4

0.5

0.6
0.7
0.8
0.9
1.0

1.2

1.4
1.6
1.8
2.0

3.0

4.0

5.0

10

20

0.25
0.25
0
0
0

0
REACTANCE COMPONENT
R
––––
ZO ( 0.2 ) 0.2 GHz IC = 20 mA
50
20
0.02 RD LOAD
0.01

0.24
0.49

0.26
0.4

−10
0.1
10
0.6 S22e

0.23
0NGT ANG
0.48

0.27
0.
8 IC = 5 mA
0

−20
0.2
T
6

0
N

IC = 20 mA
.0W4AVE −1

0.2
5.0

1.
E

0.2 GHz
7
.0

0.2
ON
0.4

1.0

2
MP
L

8
4.0
)
CO
50

AC −J––O–

0.8

−3
0.2
–Z
TA X

0.3
E
NC
−1
6

0
(

0.2 GHz

0
0.4

.
0

1
2 9
0.6 0
3.
RE

0.2 0
0.4 5

E
.0

4
0 06 40

0.
IV

−4
5

0.3
0
0

AT

IC = 5 mA
0. −1

0
G 0.4
NE

0. 31
19
5
44

0.
0.

−5

2.0
30
.

0
−1 0.

1.8
07
0.6

0.2 18
0. 3 0.

1.6
4 20 −6 32
0.7

0. −1 .08 0 0.1

1.4
0.8

0 2 0.3 7
1.2
0.9

−70
1.0

0
0.0
9 0.4 −11 0.1
6 3
1 −100 −80 0.15 0.3
0.4 0.10 −90 4
0.11 0.14 0.35
0.40 0.12 0.13
0.36
0.38 0.39 0.37
S21e-FREQUENCY S12e-FREQUENCY
CONDITION VCE = 10 V CONDITION VCE = 10 V
IC = 20 mA IC = 20 mA

90° 90°
2.0 GHz
120° 60° 120° 60°

0.2 GHz
S12e
150° 30° 150° 30°
S21e

0.2 GHz

180° 0° 180° 0°
2.0 GHz 5 10 15 20 0.05 0.1 0.15 0.2 0.25

−150° −30° −150° −30°

−120° −60° −120° −60°

−90° −90°

4
 2SC3356

[MEMO]

5
 2SC3356

[MEMO]

6
 2SC3356

[MEMO]

7
 2SC3356

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M4 96. 5
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