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2018 3rd International Conference on Integrated Circuits and Microsystems

A 1.25Gbps Programmable FPGA I/O Buffer with Multi-standard Support

Taotao Qian, Lei Chen, Xuewu Li, Huabo Sun, Jie Ni


Dept. FPGA
Beijing Microelectronic Technology Institute, BMTI
Beijing, China
e-mail: 3120102128@zju.edu.cn

Abstract—In this paper, a field programmable gate array novel I/O buffer is proposed and verified in 65nm CMOS
(FPGA) I/O buffer developed to support 1.25 gigabits-per- process in this paper. The architecture and working principle
second differential source-synchronous standards is presented. of design is described in Section II. The design of circuits is
The I/O buffer provides the compatibility of 38 high-speed I/O presented in Section III. In Section IV, the layout and
standards, features wide supply voltage range, programmable measurement results including eye diagrams are given. A
drive strength and controlled impedance driver. To enhance brief conclusion is given in Section V.
the performance and drive capacity of low voltage standards,
an auxiliary supply is introduced into the I/O buffer. The II. ARCHITECTURE OF I/O BUFFER
proposed I/O buffer has been fabricated and integrated in an
SRAM-based FPGA with commercial 65nm CMOS technology. While FPGA plays an increasing part in several types of
system, from digital to radio frequency (RF) system, FPGA
Keywords-I/O buffer; FPGA; I/O standards; programmable; devices are required to have programmable and flexible I/O
mixed-voltage I/O; high-speed; 3.3V tolerance; LVDS interfaces. In this paper, upto 38 I/O standards are supported
by the proposed I/O buffer, including 3.3V Low Voltage
I. INTRODUCTION Transistor-Transistor Logic (LVTTL), 3.3V Low Voltage
Complementary Metal Oxide Semiconductor (LVCMOS),
The past five years have witnessed the commercial 3.3V Peripheral Component Interconnect (PCI), 2.5V Stub-
development and continuous update of the fourth generation Series Terminated Logic (SSTL), 2.5V Low Voltage
(4G) mobile communication technology. With the LTE Differential Signaling (LVDS), 1.5V High-Speed
Advanced Pro Release 13 being the latest 4G release, the Transceiver Logic (HSTL) and 1.2V Gunning Transceiver
development of fifth generation (5G) has been initiated [1]. Logic (GTL). Table 1 lists all of the I/O standards supported
To adapt the rapid evolution of the communication by the proposed I/O buffer.
technology, the requirement of configurable hardware is If such plenty I/O standards are supported by adding
more and more urgent in communication system. On account corresponding transceivers in the I/O buffer, the total size
of the increasing non-recurrent engineering (NRE) cost and and power consumption of I/O buffer will be very large.
design cycle of application specific integrated circuit (ASIC) Consequently, it is necessary to share the transceivers among
in nano-scale CMOS technology, field programmable gate different I/O standards which have similar electrical feature
array (FPGA) has gradually taken place of ASIC. FPGA and termination type. For this work, the supported standards
possesses configurability, could satisfy the constantly are divided into four categories: single-ended standards,
updated requirement of communication technology. The voltage-referenced standards, pseudo-differential standards
programmable feature of FPGA help designer reduce NRE and differential-ended standards. All of single-ended I/O use
cost, minimize development cycle and risks, which makes the single-ended transceiver. The voltage-referenced I/O
FPGA widely used in communication system. inputs signal with a universal voltage-referenced receiver
Meanwhile, as FPGA move to process the complex and outputs signal with a universal single-ended transmitter.
signal in communication system, how to design the Both of pseudo-differential and differential-ended I/O use a
compatible and high-speed FPGA I/O buffer rapidly emerges universal differential-ended receiver. The different between
as a tough challenge. In order to meet the demands of various these two types of standards is the transmitting end. The
system, the FPGA devices are required to support a wide pseudo-differential I/O uses a single-ended transmitter while
range of high-speed I/O standards. Such a requirement leads differential-ended I/O needs a differential-ended transmitter.
to a large size and power consumption of FPGA I/O buffer. Thus, the single-ended output buffer can be shared by the
Besides, the complex I/O buffer circuits will make it harder single-ended I/O, voltage-referenced I/O and pseudo-
to meet the performance specification. In addition, to support differential I/O. The differential-ended output buffer is used
the 3.3V I/O standards, reduce the static power consumption by differential-ended I/O standards, such as LVDS. As for
and optimize the speed, thick gate-oxide devices are required, receiving end, three types of input buffer are required, a
creating the challenge of maintaining high performance at universal single-ended input buffer for single-ended I/O, a
low voltage VCCO with thick gate-oxide devices. voltage-referenced input buffer for voltage-referenced I/O, a
To address these challenges of FPGA I/O buffer design, a differential-ended input buffer for both pseudo-differential

978-1-5386-8311-8/18/$31.00 ©2018 IEEE 362


and differential-ended I/O. Based on these sharing principle, 6LQJOH
the proposed FPGA I/O buffer architecture is disclosed in HQGHG
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Fig. 1. The total area and power consumption of the I/O 3$' 2XWSXW

buffer can be significantly decreased with this architecture. (6'


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However, the sharing of the transceiver remains a new 3
challenge, which is the compatibility of wide supply voltage 'LIIHUHQWLDO
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TABLE I. SUPPORTED I/O STANDARDS ,QSXW
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Type Standard VCCO
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Single-ended I/O LVCMOS25 2.5V
Figure 1. Block diagram of the proposed FPGA I/O buffer architecture.
LVCMOS18 1.8V

LVCMOS15 1.5V When a low voltage signal at 1.0V from FPGA core
drives the output buffer to transmit a signal of high voltage
LVCMOS12 1.2V
standards through the single-ended output buffer, the voltage
SSTL2 Class I and II 2.5V in I/O pad cannot be pulled down to ground. Because the
grid-voltage of the 3.3V NMOS output transistors is too
SSTL18 Class I and II 1.8V
small for the NMOS to deliver enough drive current when
HSTL18 Class I,II,III and IV 1.8V driven by a 1.0V signal. Meanwhile, for the pull-up side, the
Voltage- referenced
I/O
1.0V signal is not able to turn-off the PMOS completely.
HSTL15 Class I,II,III and IV 1.5V
Furthermore, if the output transistors are driven by a low
HSTL12 Class I 1.2V voltage signal like 1.2V, the |Vgd| of pull-up PMOS will be
GTLP 1.5V higher than threshold voltage when the I/O is working at
GTL 1.2V input mode with a high voltage I/O standard. In this case, the
BLVDS 2.5V
PMOS will conduct incorrectly and cause an undesired
leakage path through its channel [2]. To solve these issues, a
LVPECL 2.5V self-adaptive level shifter is added to transfer the output
DIFF_SSTL2 Class I and II 2.5V
signal of pre-driver from 1.0V VCCIINT to the I/O supply
Pseudo-differential voltage, as shown in Fig. 2(a).
I/O DIFF_SSTL18 Class I and II 1.8V Although, self-adaptive level shifter insures the output
DIFF_HSTL18 Class I and II 1.8V transistors can be operated correctly, it is still a challenge to
maintain the high-speed and high current drive of the low
DIFF_HSTL Class I and II 1.5V voltage standards with 3.3V thick gate-oxide devices.
LVDS 2.5V Consequently, an auxiliary supply, VCCAUX is introduced to
power the pull-down side of the buffer, which is set to 2.5V.
Differential-ended LVDSEXT 2.5V As can been seen from the Fig. 2(a), the whole driving path
I/O RSDS 2.5V of the NMOS output transistor is powered by the 2.5V
VCCAUX. Different from the pull-up side, the output voltage
HT 2.5V of the level shifter in pull-down path is fixed at VCCAUX
rather than adapting with VCCO. On the one hand, by setting
the VGS of the NMOS at 2.5V, the output stage provides fast
III. CIRCUIT DESIGN edge rates and strong current drive when a low voltage VCCO
like 1.2V is applied, which means the size of pull-down
A. Mixed-Voltage I/O Buffer NMOS transistor can be reduced [3]. On the other hand, the
Aforementioned, one of the major challenge of this work constant output level simplifies the level shifter in pull-down
is supporting a wide range of I/O voltage with the universal side.
buffer. In order to tolerate 3.3V I/O VCCO, thick gate-oxide The single-ended input buffer is shown in Fig. 2(b). The
devices with high threshold voltage are required. With 3.3V major challenge of the receiver is the degradation of the
devices, maintaining the performance at low voltage such as signal. To improve the signal integrity, a Schmitt trigger is
1.2V is a tough design task. To address this challenge, some designed as the main circuit of input buffer. Benefit from its
techniques are utilized in the universal single-ended output hysteresis feature, the noise immunity of the single-ended
buffer. input buffer is strengthen.

363
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Fig. 3(b) illustrates the schematic of the LVDS input
buffer. The LVDS input buffer is based on a differential pair
input stage with a cross-coupled load, which increases the
3/HYHO
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7 buffer to convert the output signal to full-rail CMOS swing.
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Both the differential-ended and pseudo-differential I/O can
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referenced I/O standards, the input buffer is designed as the
2 same structure with one differential port connected to the
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(b)
Figure 2. Circuit Schematic of the single-ended buffer: (a)Output buffer;
(b) Input buffer.

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B. High-Speed LVDS Buffer
An LVDS interface has a low-voltage swing, from 250-
400 mV [4], which is connected point-to-point, achieves high (1 9287

data rates and reduced power dissipation. In Addition, both


Reduced Swing Differential Signaling (RSDS) and
HyperTransport Protocol (HT) are similar to LVDS. Hence,
Figure 3. Circuit Schematic of the differential-ended buffer: (a)Output
the transmitting of these differential-ended standards can be buffer; (b) Input buffer.
implemented by a high-speed LVDS output buffer with
configurable voltage swing and common-mode voltage. Output Stage
VCCO

Fig. 3(a) illustrates the schematic of the LVDS output


buffer. The 1.0V data signal and tri-state control signal are
shifted to 2.5V firstly. Then the data driver transfers the data VCCO

signal into two non-overlapping switching signals for the VCCO


output stage. The four NMOS transistors of the output stage
are used as switches and switched according to the non-
overlapping switching signals. Consequently, the polarity of Impedance -
V R EF

the current through the programmable resistors network is Control + PAD


Refer ence
switched correspondingly, which produces a differential Resi stor

output signal swing on the output terminations. The voltage


swing and common-mode voltage is adjusted by the value
and ratio of the bias current of the current mirror, and the
output impedance of the buffer is programed by the
programmable resistors network. Thus, the configurable
current mirror and programmable resistor network enables
the output buffer to support the HT, extended LVDS, LVDS, Figure 4. Block diagram of the impedance control.
and RSDS I/O standards with one circuit.

364
C. Impedance Control
As FPGAs get bigger and system clock speeds get faster,
with ever faster edge rates, maintaining signal integrity
becomes a critical issue. Printed circuit board (PCB) traces
must be properly terminated to avoid reflection or ringing. In
order to achieve better signal integrity, we introduce an (a)
impedance control in the I/O buffer to match the impedance
of the trace, as shown in Fig. 1. The impedance control
accurately configures the on or off state of the parallel output
stage transistors by comparing VREF with the voltage of the
pad, as shown in Fig. 4. To compensate for variation of
temperature and supply voltage fluctuations, the impedance (b)
of the I/O is continuously adjusted by actively controlling the Figure 7. Eye diagram (a)LVDS at 1.0Gbps;(b)LVDSEXT at 1.2Gbps.
number of the conducting output stage transistors.
IV. MEASUREMENT RESULTS V. CONCLUSION
The proposed I/O buffer was fabricated as part of an This paper describes the I/O buffer design for FPGA in
SRAM-based FPGA test chip using commercial 65nm 65nm CMOS technology. The proposed I/O buffer supports
CMOS technology. The layout is shown in Fig. 5. The upto 38 I/O standards. The mixed-voltage buffer with self-
measurement result of single-ended output is shown in Fig. 6. adaptive level shifter is able to transmit and receive single-
A pair of I/O pin was configured as LVCMOS standard with ended signals with different supply voltage. The LVDS
1.2V and 3.3V VCCO. The output level shows good buffer supports various differential-ended standards which
agreement with specification of LVCMOS standard. Fig. 7 require different common-mode voltage and voltage swing.
illustrates the eye diagram between two differential-ended The design has been successfully integrated in an FPGA chip.
I/O pin. A PRBS23 pattern sequence was generated by The measurement results demonstrate the proposed I/O
FPGA core and a Keysight DSA90804A digital signal buffer is able to support 1.25Gbps source-synchronous
analyzer was used to measure the eye-diagram waveform. standards.
The measured I/O pins have the farthest path in the global
clock network, which means the worst timing condition of REFERENCES
the FPGA test chip. The measurement result demonstrates [1] Mads Lauridsen, Lucas Chavarria Gimenez, Ignacio Rodriguez,
the proposed I/O buffer operates well at high-speed data Troels B. Sorensen, and Preben Mogensen, “From LTE to 5G for
rates. Connected Mobility,” IEEE Communications Magazine, vol. 55, no.
3, Mar. 2017, pp. 156–162, doi: 10.1109/MCOM.2017.1600778CM.
[2] Chua-Chin Wang, Chih-Lin Chen, Hsin-Yuan Tseng, Hsiao-Han Hou,
and Chun-Ying Juan, “A 800 Mbps and 12.37 ps Jitter Bidirectional
Mixed-Voltage I/O Buffer With Dual-Path Gate-Tracking Circuit,”
Figure 5. Layout of the proposed I/O buffer. IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 60,
no. 1, Jan. 2013 pp. 116–124, doi: 10.1109/TCSI.2012.2215744.
[3] Jeffrey Tyhach et al., “A 90-nm FPGA I/O Buffer Design With 1.6-
Gb/s Data Rate for Source-Synchronous System and 300-MHz Clock
Rate for External Memory Interface,” IEEE Journal of Solid-State
Circuits, vol. 40, no. 9, Sep. 2005, pp. 1829–1838, doi:
CDSTIC.IEL.IELDVD070:4:32231:1501981.
[4] IEEE Standard for Low-Voltage Differential Signals (LVDS) for
Scalable Coherent Interface (SCI), 1596.3 SCI-LVDS Standard, IEEE
Std1596.3-1996, 1996.

Figure 6. Measurement of LVCMOS output with 1.2V and 3.3V VCCO.

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