Documente Academic
Documente Profesional
Documente Cultură
D 04/03
ST330C..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
720A
International standard case TO-200AB (E-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 720 A
@ Ths 55 °C
IT(RMS) 1420 A
@ Ths 25 °C
@ 60Hz 9420 A
2
I t @ 50Hz 405 KA2s
tq typical 100 µs
TJ - 40 to 125 °C
www.irf.com 1
ST330C..C Series
Bulletin I25155 rev. D 04/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
V V mA
04 400 500
08 800 900
ST330C..C 12 1200 1300 50
14 1400 1500
16 1600 1700
On-state Conduction
Parameter ST330C..C Units Conditions
I T(AV) Max. average on-state current 720 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
I T(RMS) Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled
I TSM Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 A t = 8.3ms reapplied
7570 t = 10ms 100% VRRM
7920 t = 8.3ms reapplied Sinusoidal half wave,
I 2t Maximum I2 t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
370 t = 8.3ms reapplied
KA2s
287 t = 10ms 100% VRRM
Switching
Parameter ST330C..C Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
1000 A/µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di g/dt = 1A/µs
td Typical delay time 1.0
Vd = 0.67% VDRM, TJ = 25°C
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
tq Typical turn-off time 100
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
2 www.irf.com
ST330C..C Series
Bulletin I25155 rev. D 04/03
Blocking
Parameter ST330C..C Units Conditions
Triggering
Parameter ST330C..C Units Conditions
PGM Maximum peak gate power 10.0 TJ = TJ max, t p ≤ 5ms
W
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, t p ≤ 5ms
+VGM Maximum peak positive
20
gate voltage
V TJ = TJ max, tp ≤ 5ms
-VGM Maximum peak negative
5.0
gate voltage
TYP. MAX.
200 - TJ = - 40°C
IGT DC gate current required
100 200 mA TJ = 25°C
to trigger Max. required gate trigger/ cur-
50 - TJ = 125°C rent/ voltage are the lowest value
which will trigger all units 12V
2.5 - TJ = - 40°C
VGT DC gate voltage required anode-to-cathode applied
1.8 3.0 V TJ = 25°C
to trigger
1.1 - TJ = 125°C
www.irf.com 3
ST330C..C Series
Bulletin I25155 rev. D 04/03
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180° 0.012 0.011 0.008 0.007 TJ = TJ max.
120° 0.014 0.012 0.014 0.013
90° 0.017 0.015 0.019 0.017 K/W
60° 0.025 0.022 0.026 0.023
30° 0.043 0.036 0.043 0.037
Device Code
ST 33 0 C 16 C 1
1 2 3 4 5 6 7 8
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (E-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
4 www.irf.com
ST330C..C Series
Bulletin I25155 rev. D 04/03
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
14.1 / 15.1
(0.56 / 0.59)
4.75 (0.19)
130 130
ST330C..C Series ST330C..C Series
(Single Side Cooled) 120 (Single Side Cooled)
120 RthJ-hs (DC) = 0.09 K/ W 110 R thJ-hs (DC) = 0.09 K/ W
100
110
90
Conduction Angle 80 Conduction Period
100
70
30° 60
90 60°
90° 50
120°
40 60°
80 180°
30° 90°
30 120° 180°
DC
70 20
0 50 100 150 200 250 300 350 400 0 100 200 300 400 500 600 700 800 900
www.irf.com 5
ST330C..C Series
Bulletin I25155 rev. D 04/03
130 130
ST330C..C Series ST330C..C Series
120 120 (Double Side Cooled)
(Double Side Cooled)
110 RthJ-hs (DC) = 0.04 K/ W 110 RthJ-hs (DC) = 0.04 K/ W
100 100
90
90
80 Conduction Period
80 Conduction Angle
70 30°
70
60 60°
60
50 90°
50 30° 60° 40 120°
90°
40 120° 180°
180° 30
30 20 DC
20 10
0 200 400 600 800 1000 0 200 400 600 800 1000 1200 1400 1600
1400 1800
180° DC
120° 1600 180°
1200
90° 120°
1400 90°
60°
1000 RMS Limit 60°
30° 1200 30°
800 1000 RMSLimit
600 800
Conduction Angle 600 Conduction Period
400
400
ST330C..C Series ST330C..C Series
200
TJ = 125°C 200 TJ = 125°C
0 0
0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 1200
Average On-state Current (A) Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics
8000 9000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
7500 Rated VRRM Applied Following Surge. 8500 Versus Pulse Train Duration. Control
Initial TJ = 125°C
8000 Of Conduction May Not Be Maintained.
7000 @60 Hz 0.0083 s Initial TJ = 125°C
@50 Hz 0.0100 s 7500
No Voltage Reapplied
6500
7000 Rated VRRM Reapplied
6000 6500
5500 6000
5500
5000
5000
4500
4500
4000 ST330C..C Series ST330C..C Series
4000
3500 3500
1 10 100 0.01 0.1 1
Number Of Equa l Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled
6 www.irf.com
ST330C..C Series
Bulletin I25155 rev. D 04/03
10000
TJ = 25°C
1000
ST330C..C Series
100
0 1 2 3 4 5 6 7
Instantaneous On-state Voltage (V)
0.1
Transient Thermal Impedance Z thJ-hs (K/ W)
ST330C..C Series
0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
100
Rec tangular gate pulse (1) PGM = 10W, tp = 4ms
a) Recommended load line for (2) PGM = 20W, tp = 2ms
Instantaneous Gate Voltage (V)
1
(1) (2) (3) (4)
VGD
IGD
Device: ST330C..C Series Frequenc y Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
www.irf.com 7
ST330C..C Series
Bulletin I25155 rev. D 04/03
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 04 /03
8 www.irf.com