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Documente Profesional
Documente Cultură
February 2005
IRF840B/IRFS840B
500V N-Channel MOSFET
G G
DS TO-220
TO-220F
IRF Series GD S IRFS Series
S
Thermal Characteristics
Symbol Parameter IRF840B IRFS840B Units
RθJC Thermal Resistance, Junction-to-Case Max. 0.93 2.86 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.55 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 500 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 400 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4.0 A -- 0.65 0.8 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 4.0 A (Note 4) -- 7.3 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1400 1800 pF
Coss Output Capacitance f = 1.0 MHz -- 145 190 pF
Crss Reverse Transfer Capacitance -- 35 45 pF
Switching Characteristics
td(on) Turn-On Delay Time -- 22 55 ns
VDD = 250 V, ID = 8.0 A,
tr Turn-On Rise Time -- 65 140 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 125 260 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 75 160 ns
Qg Total Gate Charge VDS = 400 V, ID = 8.0 A, -- 41 53 nC
Qgs Gate-Source Charge VGS = 10 V -- 6.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 17 -- nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
VGS
Top : 15.0 V
10.0 V
8.0 V
1 7.0 V 1
10 10
6.5 V
6.0 V
5.5 V
ID, Drain Current [A]
o
150 C
0 0
10 10
o
25 C
o
※ Notes :
-55 C ※ Notes :
1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250µ s Pulse Test
-1 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10
3.0
Drain-Source On-Resistance
1
2.5
IDR, Reverse Drain Current [A]
10
VGS = 10V
RDS(ON) [Ω ],
2.0
VGS = 20V
0
1.5 10
150℃ 25℃
1.0 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µs Pulse Test
-1
0.5 10
0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Source-Drain voltage [V]
3000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
2500 10
VGS, Gate-Source Voltage [V]
VDS = 250V
Ciss
1500 6
1000
Coss 4
※ Notes :
1. VGS = 0 V
Crss 2. f = 1 MHz
500 2
※ Note : ID = 8.0 A
0 0
10
-1 0
10 10
1 0 5 10 15 20 25 30 35 40 45
1.2 3.0
Drain-Source Breakdown Voltage
2.5
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
2.0
1.0 1.5
1.0
0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 µA 0.5 1. VGS = 10 V
2. ID = 4.0 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
2
10 Operation in This Area
2 Operation in This Area is Limited by R DS(on)
10 is Limited by R DS(on)
100 µs
10 µs 10
1
100 µs 1 ms
ID, Drain Current [A]
1
10
1 ms 10 ms
10 ms 100 ms
DC 0 DC
0
10
10
-1
-1
※ Notes : 10 ※ Notes :
10
o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for IRF840B for IRFS840B
10
8
ID, Drain Current [A]
0
25 50 75 100 125 150
TC, Case Temperature [℃]
0
10
10
-1 0 .1
0 .0 5
0 .0 2
PDM
0 .0 1 t1
s in g le p u ls e t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
D = 0 .5
0
10
Zθ JC(t), Thermal Response
0 .2 ※ N o te s :
1 . Z θ J C (t) = 2 .8 6 ℃ /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 5
-1
10
0 .0 2 PDM
0 .0 1
t1
t2
s in g le p u ls e
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off
L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
DUT +
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
TO - 220
Dimensions in Millimeters
6.68 ±0.20
15.87 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47
9.75 ±0.30
0.80 ±0.10
(3
0°
)
#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20
9.40 ±0.20
Dimensions in Millimeters
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.