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Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power www.onsemi.com
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are V(BR)DSS RDS(on) TYP ID MAX
critical and offer an additional safety margin against unexpected −60 V 155 mW @ −10 V, 6 A −12 A
voltage transients.
D
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature P−Channel
• Designed for Low−Voltage, High−Speed Switching Applications and G
to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications S
Requiring Unique Site and Control Change Requirements;
4
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
4
AYWW
2955G
Range 175
NT
NT
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − −100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) Vdc
(VDS = VGS, ID = −250 mAdc) −2.0 −2.8 −4.0
(Negative Temperature Coefficient) − 4.5 − mV/°C
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NTD2955, NVD2955
25 24
TJ = 25°C VGS = -10 V TJ = -55°C
-9 V
-8 V 22 VDS ≥ −10 V
-9.5 V 20 25°C 125°C
20
−ID, DRAIN CURRENT (A)
0 0.050
0 3 6 9 12 15 18 21 24 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
2.0 1000
VGS = 0 V
1.8 VGS = −10 V
ID = −6 A
1.6
−IDSS, LEAKAGE (nA)
1.4 100
1.2 TJ = 125°C
1.0
0.8
10
0.6
100°C
0.4
0.2
0 1
-50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40 45 50 55 60
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
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NTD2955, NVD2955
1200 15 60
Crss
800 10 QT 40
VGS
600 7.5 30
Ciss QGS QGD
400 5 20
1000 15
VDD = −30 V
VGS = 0 V
ID = −12 A
−IS, SOURCE CURRENT (AMPS)
TJ = 25°C
VGS = −10 V
TJ = 25°C
100 10
t, TIME (ns)
tf
tr
td(off)
10 td(on) 5
1
1 10 100 0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage versus Current
Variation versus Gate Resistance
100
VGS = −15 V
SINGLE PULSE
ID, DRAIN CURRENT (AMPS)
TC = 25°C
10
di/dt
100 ms
IS
1 ms
10 ms trr
1
dc ta tb
RDS(on) LIMIT TIME
THERMAL LIMIT
PACKAGE LIMIT tp 0.25 IS
0.1
0.1 1 10 100 IS
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased Figure 12. Diode Reverse Recovery Waveform
Safe Operating Area
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NTD2955, NVD2955
1.0
D = 0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.2
0.1
ORDERING INFORMATION
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NTD2955, NVD2955
PACKAGE DIMENSIONS
L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) M C b2 0.028 0.045 0.72 1.14
TOP VIEW b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
GAUGE SEATING
L2 PLANE C PLANE
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L BOTTOM VIEW L3 0.035 0.050 0.89 1.27
A1 L4 −−− 0.040 −−− 1.01
L1 ALTERNATE
Z 0.155 −−− 3.93 −−−
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
SOLDERING FOOTPRINT* 4. DRAIN
6.20 3.00
0.244 0.118
2.58
0.102
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NTD2955, NVD2955
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 −−− 3.93 −−−
D 3 PL
G STYLE 2:
0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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