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NTD2955, NVD2955

Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power www.onsemi.com
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are V(BR)DSS RDS(on) TYP ID MAX
critical and offer an additional safety margin against unexpected −60 V 155 mW @ −10 V, 6 A −12 A
voltage transients.
D
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature P−Channel
• Designed for Low−Voltage, High−Speed Switching Applications and G
to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications S
Requiring Unique Site and Control Change Requirements;
4
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 1


1 2 2
Rating Symbol Value Unit 3 3
Drain−to−Source Voltage VDSS −60 Vdc DPAK IPAK
CASE 369C CASE 369D
Gate−to−Source Voltage
STYLE 2 STYLE 2
− Continuous VGS ± 20 Vdc
− Non−repetitive (tp ≤ 10 ms) VGSM ± 25 Vpk
MARKING DIAGRAMS
Drain Current & PIN ASSIGNMENTS
Dr− Continuous @ Ta = 25°C ID −12 Adc
IDM −18 Apk 4 4
Dr− Single Pulse (tp ≤ 10 ms)
Drain Drain
Total Power Dissipation @ Ta = 25°C PD 55 W
°C
AYWW

Operating and Storage Temperature TJ, Tstg −55 to


2955G

AYWW

2955G
Range 175
NT

NT

Single Pulse Drain−to−Source Avalanche EAS 216 mJ


Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak 2
1 3
IL = 12 Apk, L = 3.0 mH, RG = 25 W) Drain
Gate Source
1 2 3
Thermal Resistance Gate Drain Source
− Junction−to−Case RqJC 2.73 °C/W
− Junction−to−Ambient (Note 1) RqJA 71.4 A = Assembly Location*
− Junction−to−Ambient (Note 2) RqJA 100
NT2955/NV2955 = Specific Device Code (DPAK)
Maximum Lead Temperature for Soldering TL 260 °C NT2955 = Specific Device Code (IPAK)
Purposes, 1/8 in. from case for Y = Year
10 seconds WW = Work Week
G = Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be * The Assembly Location code (A) is front side
assumed, damage may occur and reliability may be affected. optional. In cases where the Assembly Location is
1. When surface mounted to an FR4 board using 1 in pad size stamped in the package, the front side assembly
(Cu area = 1.127 in2).
code may be blank.
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in2).
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.

© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number:


March, 2017 − Rev. 16 NTD2955/D
NTD2955, NVD2955

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS Vdc
(VGS = 0 Vdc, ID = −0.25 mA) −60 − −
(Positive Temperature Coefficient) − 67 − mV/°C

Zero Gate Voltage Drain Current IDSS mAdc


(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C) − − −10
(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C) − − −100

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − −100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) Vdc
(VDS = VGS, ID = −250 mAdc) −2.0 −2.8 −4.0
(Negative Temperature Coefficient) − 4.5 − mV/°C

Static Drain−Source On−State Resistance RDS(on) W


(VGS = −10 Vdc, ID = −6.0 Adc) − 0.155 0.180

Drain−to−Source On−Voltage VDS(on) Vdc


(VGS = −10 Vdc, ID = −12 Adc) −1.86 −2.6
(VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C) − −2.0

Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS 8.0 − Mhos


DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 500 750 pF
Output Capacitance (VDS = −25 Vdc, VGS = 0 Vdc, Coss − 150 250
F = 1.0 MHz)
Reverse Transfer Capacitance Crss − 50 100
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn−On Delay Time td(on) − 10 20 ns
Rise Time (VDD = −30 Vdc, ID = −12 A, tr − 45 85
Turn−Off Delay Time VGS = −10 V, RG = 9.1 W) td(off) − 26 40
Fall Time tf − 48 90
Gate Charge QT − 15 30 nC
(VDS = −48 Vdc, VGS = −10 Vdc, QGS − 4.0 −
ID = −12 A)
QGD − 7.0 −
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Diode Forward On−Voltage VSD Vdc
(IS = 12 Adc, VGS = 0 V) − −1.6 −2.5
(IS = 12 Adc, VGS = 0 V, TJ = 150°C) − −1.3 −

Reverse Recovery Time trr − 50 ns


(IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V)
ta − 40 −
tb − 10 −
Reverse Recovery Stored Charge QRR − 0.10 − mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.

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NTD2955, NVD2955

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

25 24
TJ = 25°C VGS = -10 V TJ = -55°C
-9 V
-8 V 22 VDS ≥ −10 V
-9.5 V 20 25°C 125°C
20
−ID, DRAIN CURRENT (A)

−ID, DRAIN CURRENT (A)


-7 V 18
16
15 -6.5 V 14
12
-6 V
10 10
-5.5 V 8
6
5 -5 V
4
2
0 0
0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics


RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)


0.50 0.250
0.45 VGS = −10 V TJ = 25°C
0.225
0.40
0.200
0.35
TJ = 125°C 0.175 VGS = −10 V
0.30
0.25 0.150
0.20 25°C 0.125 -15 V
0.15
-55°C 0.100
0.10
0.05 0.075

0 0.050
0 3 6 9 12 15 18 21 24 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

2.0 1000
VGS = 0 V
1.8 VGS = −10 V
ID = −6 A
1.6
−IDSS, LEAKAGE (nA)

1.4 100
1.2 TJ = 125°C

1.0
0.8
10
0.6
100°C
0.4
0.2
0 1
-50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40 45 50 55 60
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage


Temperature Current versus Voltage

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NTD2955, NVD2955

1200 15 60

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)


−VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS = 0 V VGS = 0 V TJ = 25°C ID = 12 A
VDS TJ = 25°C
1000 Ciss 12.5 50
C, CAPACITANCE (pF)

Crss
800 10 QT 40
VGS
600 7.5 30
Ciss QGS QGD

400 5 20

200 Coss 2.5 10


Crss
0 0 0
10 5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16
-VGS -VDS QT, TOTAL GATE CHARGE (nC)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source


Voltage versus Total Charge

1000 15
VDD = −30 V
VGS = 0 V
ID = −12 A
−IS, SOURCE CURRENT (AMPS)

TJ = 25°C
VGS = −10 V
TJ = 25°C
100 10
t, TIME (ns)

tf
tr
td(off)

10 td(on) 5

1
1 10 100 0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage versus Current
Variation versus Gate Resistance

100
VGS = −15 V
SINGLE PULSE
ID, DRAIN CURRENT (AMPS)

TC = 25°C
10

di/dt
100 ms
IS
1 ms
10 ms trr
1
dc ta tb
RDS(on) LIMIT TIME
THERMAL LIMIT
PACKAGE LIMIT tp 0.25 IS
0.1
0.1 1 10 100 IS
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased Figure 12. Diode Reverse Recovery Waveform
Safe Operating Area

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NTD2955, NVD2955

1.0
D = 0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.2

0.1

0.1 0.05 P(pk)


RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
t1 READ TIME AT t1
0.01
t2 TJ(pk) - TC = P(pk) RqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
t, TIME (s)

Figure 13. Thermal Response

ORDERING INFORMATION

Device Package Shipping†


NTD2955G DPAK 75 Units / Rail
(Pb−Free)

NTD2955−1G IPAK 75 Units / Rail


(Pb−Free)

NTD2955T4G DPAK 2500 / Tape & Reel


(Pb−Free)

NVD2955T4G* DPAK 2500 / Tape & Reel


(Pb−Free)

SVD2955T4G* DPAK 2500 / Tape & Reel


(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.

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NTD2955, NVD2955

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)


CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) M C b2 0.028 0.045 0.72 1.14
TOP VIEW b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
GAUGE SEATING
L2 PLANE C PLANE
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L BOTTOM VIEW L3 0.035 0.050 0.89 1.27
A1 L4 −−− 0.040 −−− 1.01
L1 ALTERNATE
Z 0.155 −−− 3.93 −−−
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
SOLDERING FOOTPRINT* 4. DRAIN

6.20 3.00
0.244 0.118
2.58
0.102

5.80 1.60 6.17


0.228 0.063 0.243

SCALE 3:1 ǒinches


mm Ǔ

*For additional information on our Pb−Free strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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NTD2955, NVD2955

PACKAGE DIMENSIONS

IPAK
CASE 369D
ISSUE C
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 −−− 3.93 −−−
D 3 PL
G STYLE 2:
0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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