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Introduction :
The Field Effect Transistor (FET) is a three terminal device. Three terminals are Drain (D),
Source (S) and Gate (G). In FET, current flow is due to only one type of charge particles,
either electrons or holes. So FET is known as unipolar device. The name “field effect” is
derived from the fact that the current is controlled by an electric field set up in the
device by an externally applied voltage. Thus FET is a voltage controlled device while
bipolar transistor is current controlled device. The gate-channel junction looks like a diode
that never conducts hence the gate draws no current. This is the major difference between
normal transistors and FETs .Consequently FETs have extremely large gate input
impedances As mentioned above, the source-drain current is the only current that flows
through a FET. The source- drain current is labeled ID.The Field Effect Transistor (FET) can
be broadly classified into following categories:
Lab work
Using Orcad plot the relation between Id and Vds at different values of Vgs
And the relation between Id and Vgs for fixed value of Vds .
Use (J2N3819) transistor from the JFET library