MicRocHIP 27H C256 256K (32K x 8) High-Speed CMOS EPROM FEATURES PACKAGE TYPE ‘+ High speed performance oP + 85ins access time available + CMOS Technology for low power consumption = 55 mA Active current + 100 pA Standby current ‘+ OTP (one time programming) available ‘+ Auto-insertion-compatible plastic packages ‘+ Auto ID aids automated programming + Organized 32K x 8: JEDEC standard pinouts + 28-pin Dual-in-fine and SOIC package + 82:pin Chip carrier (leadless or plastic) + 28:pin Very Small Outline Package (VSOP) PLeciLec * Available for tho following temperature ranges: + Commercial: —0°C to 470°C ~ Industrial: -40°C to +85'C = Automotive: 40°C to +125°C DESCRIPTION ‘The Microchip Technology Inc. 27HO256 is a CMOS. 256K bit electrically Programmable Read Only Memory (EPROM). The device is organized as 32K words of 8 bits each. Advanced CMOS technology allows bipolar a lov speed with a significant reduction in power. A low na ae power option (L) allows further reduction inthe standby e Bas wor requirement to 100 4A The 27HC256 is contig. “ we ured in a standard 256K EPROM pinout which allows = Fs an easy upgrade for present 27C256 users. A com s For plete family of packages are offered to provide tho eh ES ao uimestflaxibilty. The 27HC256 allows high perfor. s Ra mance microprocessors to run at full speed without the. 2 por need of wak slates. CMOS design and procassing a Fa os makes this part suitable for appcations where high o Bo reliability and reduced power consumption are ossan- vege fos tal veor SrmiMecere Tecmo wg BUD32Z0) DOL2YSY 433 MMH —2511124GpaG07827HC256 1.0 ELECTRICAL CHARACTERISTICS TABLE 1-1; PIN FUNCTION TABLE 1.1 Maximum Ratings* Name Funetion Vcc and input vollagas Wirt. VSS.....40.6V 10 47.25 ‘AO-A14 | Address Inputs Ver voltage wrt. Vs during TE | chipEnable rograMMMINY on oo 9 BV 10-414 oe Voltage on AS wat. VSs -0.8V to +13.5V cea ‘Output voltage w.rt. Ves. 1. -0.6V to Voo +1.0V Vid Programming Voltage ‘Temperature under bias 65°C to 125°C 00-07 |Data Output Storage temperature. 65°C fo +150°C Veco |+5v Maximum exposure to UV.. sonneT 258Weclemr® Ves | Ground ESD protection on all pins. oe NO ‘No Connection; No Intemal Connec- *Notoe: Stress above those listed under ‘Maximum Ratings” tion may cause permanent damage to the device. Thisis a stess rat ing only and funcional operation ofthe device at thoso or any NU | NotUsed: No Extemal Connection is ‘her condone above those inceatd in tho operation Istngs of Allowed this epeceaton snot implie. Exposure to maximum rating con lions for extended perads may affect doves rei, TABLE 1-2: READ OPERATION DC CHARACTERISTICS, Veo = +5V 210% Commercial Jamb= 0'Ct0 470°C Industral: Tamb = 40°C to +85°C Extended (automotive): Tamb = -40°C to +425°C Parameter Part®| Status | Symbol | Min | Max | Units Conditions Input Votages: ‘al | Loge" | vm | 20] Vocet| Vv Logico | vu jot} o8 | v Input Leakage all we [to] 10 | pA [Vins -0.1VtoVeo+1.0V | output Vetages: all | Loge” | vow | 24 | Vv flow=-4ua Logica" | Vow 045 | Vv |tov=16mA (Output Leakage all = wo | -10] 10 | pA [Vour=-0.1V to Voo+0.1V Input Capacitance all 7 cw | —| 6 | pF [vin=0v; Tamb= 25°C: t= 1 MH2| (Output Capacitance | all = cour | — | 12 | pF |Vour= ov; Tamb = 25°C; f=1 MHz Power Supply Current, | C | TTLinput | tcc: | — | s5 | mA |Voo=5SVivPP=Voo Active te | TrLinput | tcca | — | 65 | ma |f=2MHz;OE=CE=Vu; lout = 0 mA; Vi =-0.1 10 0.8V; Vil= 2.0 to Voo; Note 4 Power Supply Current, | C = tects | — | 35 | ma ‘Standby, Sta Le = 40 | ma Power Supply Current, | © | TTLinput | tools | — | 2 | ma [Standby, “U"version | 1 | TTLinput 3 | ma (low power) te too | pA |CE=Vect0.2v lp Read Current all | Read Mode | ter | voc| 100 | HA |Vr=55v ver Read Voltage all | Read Modo | ver _|-07| Voo | V_|Note2 * Pats: C=Commercial Temperature Range; = Low Powe; |, Eindustrial and Extended Temperature Ranges Note 1: Active current increases 3 mA per MHz for Commercial part or SMA per MHz for Industrial or Extended temperature parts up to operating frequency. Note 2: Vcc must be applied simultaneously or before Ve, and be removed simultaneously or after VPP. ————_—_—_—_——— {© 1994 Microchip Technology inc. Osiecesce7% MM 6103201 0012455 377 mm27HC256 TABLE 1-3: READ OPERATION AC CHARACTERISTICS AC Testing Waveform: Vii =8.0V and ViL=0.0V; Von= Vous 15V ‘Output Load: 1 TTL Load + 30 pF Input Rise and Fall Times: 5 ns Ambient Temperature: Commercial: Tamb= 0°C10470'C Industrial: Tamb = -40°C to +85°C. Extended (Automotive): Tab =-40°C to +125°C T 2racase-ss | 27Hc2s6-70 | z7Hc2s6-00 | Parameter Partt | sym Units | Conditions | in | Max | Min | Max | min | Max Address to Output Delay | all tace | — 55 = 70 = 90 ns |[CE=O0E=Vi GE to Output Delay t [we [— [ss | — | 7 | —| 90 | ns lorem S_| toe 45 45 50 E to Output Delay at | we |= [oo | — [as | — | 40 | ns [Cem BE to OF High at [tor | o | 25 | o | a0 | o | 35 | ns Impedance Output Hold trom at fw fo f—fol—lo|—|ns Address OE or OE, | whichever goes frst | * Parts: S = Standard Power, L = Low Power FIGURE 1-1: READ WAVEFORMS vu Address ><] ‘Address valid ve vw & ve tee —=| vet OE ve torr) outputs Vr HighZ UA greene Tv High Z 00-07 yg, iy —— Notes: (1) 10% is specified for OE or GE, whichever occurs frst (2) DE may bo delayed up fo toe =10€ altar the falling edge of CE without impact on toe (G) This parameter is sampled and is not 100% tested. ©1804 Mictocip Tecteology me. wm 43493201 DOL245b 20b ma 10S111246-page 7-3527HC256 TABLE 1-4: PROGRAMMING DC CHARACTERISTICS ‘Ambient Temperature: Tamb = 25°C +5°C. Voc = 6 BV £0.25, VPP = VH = 13.0V:+0.25V Parameter Status | Symbol | Min | Max. | Units Conditions Tnput Voltages Logit” | vm | 20 |voor? v : Logic” | vn | 01 | 08 | Vv | Input Leakage = ty [70 [10 | wa _|¥n=0vt0Voo Output Vorages [Logie | von | 24 Vv flon=-4ma Logic” | vo. | — | 045 | V__|lo.= 16ma Vee Current, program & verity | — too | — | 55 | ma - ‘VPP Currant, program = ip | — | 90 | ma_|Notet ‘AG Product Kdentiication = va [15 [125] Vv ‘Note 1; Voc must be applied simutaneously or before VPP and removed simultaneously or after Vee TABLE 1-5: PROGRAMMING AC CHARACTERISTICS for Program, Program Verity {AC Testing Waveform: —Vilie2.4V and ViL=0.45V; VoH=2.0V; VoL=0.8V and Program Inhibit Modes. ‘Ambient Temperature: Tamba25°C + 5°C Voos 6.5V +0.25V, Ver =13.0V + 0.25V Parameter ‘Symbol | Min. | Max. | Units Remarks ‘Address Set-Up Time us| 2 |—| os Data Set-Up Time ws | 2 | — [us | Data Hold Time fo aa ‘Address Hold Time wa | o | — | as Float Delay (2) tor | 0 | 190| ns Veo Set-Up Time wes | 2 | — | us Program Pulse Width (1) ew | 95 | 105 | us [100ns typical [OE Set-Up Tima tocs | 2 | — | vs = VPP Set-Up Time wes | 2|—| we _| Data Valid rom OF woz | — | 100 [ ns ‘Note 1: For express algorithm, intial programming width tolerance is 100 ps 15% Note 2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no longer driven (see timing diagram). ————————————————————————— Ssiv2scre0e755 wm £403201 OOL2457 142 a (© 1994 Microchip Technology ne.27HC256 FIGURE PROGRAMMING WAVEFORMS. Address Data Stable Address Stable Li ol tor High Z ae Data Out Valid 0 13.0V(2) ver Sov 68ve) Veo 50v vw vw viv Ve Notes: (1) toF and tos are characteristics of the device but must be accommodated by the programmer @) Voc =6.5V +0.25V, VPP = VH = 13,0V 40,25V for express algorithm TABLE 1-6: MODES Operation Mods ce OE Ver a9 Road Vit Vit ves] x Dour Program Vie Vin Va x Div Program Verify |v Vin Va x Dour | Program Inhibit Via via Va x High 2 ‘Standby Vin x Veo x High Z ‘Ouiput Disable {ve vw Veo x High Z [identity Vic Vit Ver va Identity Code “X= Dont Car 2.0 FUNCTIONAL DESCRIPTION ‘The 27HC256 has the following functional modes: + Operation: The 27HC256 can be activated for data read, be put in standby mode to lower its powor ‘consumption, or have the outputs disabled. ‘+ Programming: To receive its permanent data, the 27110256 must be programmed. Both a program ‘and program/verify procedure are available. Itcan be programmed with the "Express" algorithn ‘The programming equipment can automatically recog- nize the device type and manufacturer using the iden- tity mode. 24 Operati + Read * Standby + Output Disable For the general characteristics in these operation ‘modes, refer to the table above, {© 1994 Microchip Technology inc. M™@ 6103201 0012458 089 a 08111240-page 7:3727HC256 2.2 Read Mode For timing and AC characteristics refer to the tables Read Waveforms and Read Operation AC Characteris- tics. ‘The 27HC256's memory data is accessed when * the chip is enabled by setting the CE pin low. * the data is gated to the output pins by setting the ‘OE pin tow For Read operations on the Low Power version, once (Acc) is equal to the delay from CE to output (tee). A faster CE access time (Ic) is avalable onthe standard part to provide the addtional time for decoding the CE signal, Data is transferred to the output after a delay (Q0€) from the falling edge of OE 2.3 Standby Mode ‘The standby mode is entered when the CE pin is high, ‘and a program mode is not defined. When these con- tions are met, the supply current will drop from 55 mA. to 100 A on the low power part, and to 35 mA on the standard part. 2.4 — Output Disable ‘This feature eliminates bus contention in multiple bus ‘microprocessor systems. The outputs go to a high impedance when the OE pin is high, and the program ‘mode is not defined, 25 Programming Algorithms ‘The Express algorithm has been developed to improve ‘programming throughput times in a production environ ment. Up to 10 pulses of 100 ys each are applied until the byte is verified. No over-programming is required. ‘flowchart of this algorithm is shown in Figure 2-1 “The programming mode is entered when: 2) _Vocis brought to the proper level ) VPP is brought tothe proper Vi level ©) the OE pin is high 4) the CE pinis tow ‘Since the erased state is *1* in the array, programming ‘of "0" is required, The address of the memory location tobe programmed is set via pins AO -A14, and the data is presented to pins 00-07. When data and address are stable, a low going pulse on the CE line programs that memory location. 26 Verify Alter the array has been programmed, it must be veri fied to make sure that all the bits have been correctly programmed. This mode is entered when all of the fol- lowing conditions are met 2) Vocis at the proper level b)_VPPis at the proper VH level ©) the TE pinis high d) the OE tine is ow ‘After the array has been programmed it must be ver fied to ensure all the bits have been correctly pro- ‘grammed. This mode is entered when ail the following ‘conditions are met: 2). Vocis at the proper level b)_ Ver is at the proper Vi level, ©) the CE tine is high, an 4) the OE line is low. 2.7 Inhibit Mode ‘When Programming multiple devices in parallel with different data only CE needs to be under separate con- trolto each device. By pulsing the CE line low on a par- ticular device, that device will be programmed, and all other devices with GE held high will not be pro- ‘grammed with the data although address and data are avalabe on their input pins. 2.8 — Identity Mode In this mode specific data is read from the device that identifies the manufacturer as Microchip Technology, and the device type. This mode is entered when pin AS ig taken to Vi (11.5V to 12.5V). The CE and OE pins must be at Vit. AO is used to access any of the two non-erasable bytes whose data appears on 00- 07. Pin = | Input ‘Output entity | Ao [Oo 1 7 x Manufacturer | Vi 10 [011011 [o]o|1 [29 Device Type" | viz |1 [oo |1 || 1 [0 Jo [94 29 Erasure Windowed products offer the abilty to erase the mem- ory array. The memory matrix is erased to the all "1"s state when exposed to ultraviolet light at wavelengths ‘< 4000 Angstroms (A). The recommended procedure is to expose the erasure window of device to a com- mercial UV source emitting at 2537 A with an intensity ‘of 12,000uWiem® at 1". The erasure time at that dis- tance is about 15 to 20 min. 20 eo =O © no =o oo = OsiniaGeae 7-38 wy 440320) OOL24S9 TLS ae (© 1994 Microchip27HC256 FIGURE 2-1: PROGRAMMING EXPRESS ALGORITHM Conditions: Tar = 2541-50 Voc = 6.5¥/-0.25V Ver = 13.04/-0.28V ‘ADDR = First Location Veo =6.5V. VeP= 13.0V ¥ ee es Program one 100 ns pulse Incromont X caves 7 Address? No Increment Address Voo = ep = 4.5V, 55V }~——___ Device Failed © 1006 Mecochip Tecmnlonyre: WH £40320) DOL24b0 737 lll DS11124G-page 7-3927HC256 27HC256 Product Identification System ‘To order orto obtain Information, e.g. on pricing ot delivery, ploase Use the Iisted part numbers, and rer tothe factory orth Iisted ales offices, ‘27HC256 L -§5 1/80 Package: ‘Temperature Range: Acces Time: BeR mo. BBvexe arHo2s6 ‘cERDIP ‘Coramic Leadless Chip Cartier Prastie Leaded Chip Carrier Plastic DIP Plastic SOIC Vary Small Outing Package (VSOP) &x13.4mm octosoe “40°C to 408°C 40'S 1041250 sss Tons 90s (SOIC ont) ‘Standard Power Low Power 258K (82K x 8) High-Speed EPROM 0811124@-page 7-40 (© 1994 Microchip Technology Ine. W@™® 6103201 0012461 673