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Chapter Outline
I = Q⋅v
dV
v = +µn
dx
dV ( x)
I D = WCox [ VGS − V ( x) − VTH ] µ n
dx
I D = µ nCox [ 2(VGS − VTH )VDS − VDS2 ]
1 W
2 L
1
Ron =
W
µ nCox ( VGS − VTH )
L
At small VDS, the transistor can be viewed as a resistor,
with the resistance depending on the gate voltage.
It finds application as an electronic switch.
1 W
I D = µ nCox ( VGS − VTH ) (1 + λVDS )
2
2 L
The original observation that the current is constant in the
saturation region is not quite correct. The end point of the
channel actually moves toward the source as VD increases,
increasing ID. Therefore, the current in the saturation
region is a weak function of the drain voltage.
CH 6 Physics of MOS Transistors 26
λ and L
W W 2I D
g m = µ nCox ( VGS − VTH ) g m = 2 µ nCox ID gm =
L L VGS − VTH
Since the channel is very short, it does not take a very large
drain voltage to velocity saturate the charge particles.
In velocity saturation, the drain current becomes a linear
function of gate voltage, and gm becomes a function of W.
CH 6 Physics of MOS Transistors 30
Body Effect
1 W
I D = µ nCox ( VDD − V1 − VTH )
2
2 L
Since V1 is connected at the source, as it increases, the
current drops.
1
ro ≈
λI D
When the bias point is not perturbed significantly, small-
signal model can be used to facilitate calculations.
To represent channel-length modulation, an output
resistance is inserted into the model.
1 W
I D , sat = µ p Cox ( VGS − VTH ) (1 − λVDS )
2
2 L
I D ,tri = µ p Cox [ 2( VGS − VTH )VDS − VDS2 ]
1 W
2 L
1 W
I D , sat = µ p Cox ( VGS − VTH ) (1 + λ VDS )
2
2 L
I D ,tri = µ p Cox [ 2( VGS − VTH ) VDS − VDS2 ]
1 W
2 L