PF610BL

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

100V 0.7Ω @VGS = 10V 0.9A

SOT- 223

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TA = 25 °C 0.9
Continuous Drain Current ID
TA = 70 °C 0.5
1
A
Pulsed Drain Current IDM 5.4
Avalanche Current IAS 3.8
Avalanche Energy L = 1mH EAS 7.2 mJ
TA = 25 °C 1.3
Power Dissipation PD W
TA = 70 °C 0.5
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RqJA 95 °C / W
1
Pulse width limited by maximum junction temperature.

Ver 1.0 1 2012/7/4

PF610BL
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 100
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.8 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 80V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 80V, VGS = 0V , TJ = 125 °C 10
On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 5.4 A
Drain-Source On-State VGS = 4.5V, ID = 0.5A 0.52 0.9
RDS(ON) Ω
Resistance1 VGS = 10V, ID = 0.9A 0.48 0.7
Forward Transconductance1 gfs VDS = 5V, ID = 0.9A 2 S
DYNAMIC
Input Capacitance Ciss 246
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 65 pF
Reverse Transfer Capacitance Crss 20
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.1 Ω
2 Qg
Total Gate Charge 7.2
2 VDS = 0.5V（BR)DSS
Gate-Source Charge Qgs 1 nC
ID = 0.9A, VGS = 10V
2 Qgd
Gate-Drain Charge 3
2 td(on)
Turn-On Delay Time 8
Rise Time 2 tr VDS = 50V, ID @ 0.9A, VGS = 10V, 11
nS
Turn-Off Delay Time 2 td(off) RGS = 4.7Ω 26
Fall Time2 tf 13.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 0.9 A
1 VSD IF = 0.9A, VGS = 0V
Forward Voltage 1.2 V
Reverse Recovery Time trr 32 nS
IF = 2 A, dl/dt = 100A / μS
Reverse Recovery Charge Qrr 35 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/7/4

PF610BL
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/7/4

PF610BL
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/7/4

PF610BL
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/7/4