EE 105

BASIC ELECTRICAL AND ELECTRONICS

ENGINEERING

SEMICONDUCTOR DIODES
DIODE BIASING
 Learning Outcomes
 Explain the concept of conduction in semiconductors using
electron and hole theory.
 Discuss the crystal structure of the common semiconductor
materials and ions formed from covalent bonding.
 Explain the general characteristics of three important
semiconductor materials: Ge, Si, and GaAs.
 Discuss the effect of doping a semiconductor with n-type and
p-type material.
 Enumerate the different kinds of n-type and p-type material.

 Explain what happens in a diode during no bias, forward bias,

and reverse bias conditions.
 Identify the three equivalent model of the diode to plot their
corresponding characteristic curve.
 Analyze circuit with diodes connected in series and parallel.
 Semiconductor Diode

 The semiconductor diode is formed

by simply bringing the n-type and p-
type materials together (constructed
from the same base-Ge or Si). p-type n-type
 When an n-type and p-type materials
are joined, the majority carriers in the Depletion region
n-type material (free electrons) near
the p-n junction diffuse on the
majority carriers of the p-type
material (holes) near the p-n junction
creating what is called a Depletion
p-type n-type
region.
 Semiconductor Diode Bias

 When leads are connected to the ends of the n-type and p-type
material that were joined, the result is a two-terminal device
called a diode. Diode

 To bias a diode means to

apply external voltage
across its terminals.
 If the applied voltage is p-type n-type
zero, there is no bias
applied.
+ VD = 0 -
(no bias)
 Forward Biased Diode

 When the p-type material and n-type material is connected to the

positive and negative terminals of an external source,
respectively, the diode is said to be forward biased.
Diode
 A forward-biased diode
narrows the depletion
region, making it easy for
current to flow through it.
 Thus a forward-biased diode p-type n-type
is like a very low resistance
element. Is
+ VD > 0 -
(forward bias)
 Reverse Biased Diode

 When the p-type material and n-type material is connected to the

negative and positive terminals of an external source, the diode is
said to be reversed biased. Diode

 The positive ions layer in

the n-type will widen
because more free electrons
are attracted to the positive p-type n-type
terminal of the source.
- VD > 0 +
(reversed bias)
 Likewise a widening of the negative ions in the p-type layer results
because more electrons from the negative terminal of the source is
attracted to the p-type material that is rich in holes.
 Reversed Biased Diode

 The widening of the depletion region will establish too great a

barrier for the majority carriers to overcome, effectively reducing
the majority carrier flow to zero. Diode

 Thus a reversed-biased
diode is like a very high
resistance element that
essentially blocks the flow p-type n-type
of current from the source.
Is = 0
- VD = 0 +
(reversed bias)
 pn Junction Diode

Basic Construction Circuit symbol

Anode ID
p-type n-type Cathode
Anode Cathode
net acceptor net donor + VD –
concentration Na concentration Nd
cross-sectional area AD
 pn Junction Diode

Physical Structure
Anode
+ ID
metal
SiO2 SiO2
p-type Si
VD
n-type Si
– metal
Cathode
Diode Characteristic Curve (Current vs.
Voltage)

ID(mA) Ge Si
Forward –
Biased Region

VBR VBR VD(V

)
VTH0.7V
VTH0.3V

Reversed –
Bias Region

Si Ge
 Diode Equivalent Circuits

 An equivalent circuit is a combination of elements properly chosen

to best represent the actual characteristics of a device or system in a
particular operating region.
 Once the equivalent circuit is defined, the device symbol can be
removed from a schematic and the equivalent circuit inserted in its
place without severely affecting the actual behavior of the system.
Forward and Reverse Bias of a Diode
 Diode Equivalent Circuits

Ideal Equivalent Circuit

 The equivalent circuit is derived from the approximate
characteristic curve as shown;

Ideal equivalent circuit

THE IDEAL MODEL OF A DIODE: SIMPLE SWITCH
 Diode Equivalent Circuits

Simplified (Approximate) Equivalent Circuit/Practical Model

 The equivalent circuit is derived from the approximate
characteristic curve as shown;

Silicon simplified equivalent circuit

THE PRACTICAL MODEL OF A DIODE: usually adds the

barrier potential to the ideal switch model

THE PRACTICAL MODEL OF A DIODE
 Diode Equivalent Circuits

Piecewise-Linear Equivalent Circuit/Complete Diode Model

 The equivalent circuit is derived from the approximate
characteristic curve as shown (in red);

Silicon piecewise-linear equivalent circuit

THE COMPLETE DIODE MODEL: consists of the barrier
potential, the small forward dynamic resistance r’ d & the large
internal reverse resistance (r’ R )
 Series Diode Configurations

Refers to the configuration where the voltage source, diode, and load
are in series.

To simplify computation, we normally assume that the diode has no

resistance at forward bias conditions, but with the offset voltage VK
intact for approximate models.
Series Diode Configurations

Approximate
and
Ideal Diode Models

Note: for Ge the offset

voltage is VK = 0.3 V.
Series Diode Configurations
 Illustrative Problem 1
For the series diode configuration below, determine VD, VR, and ID.
 Illustrative Problem 2
Determine VO and ID for the series circuit below;
 Parallel, Series-Parallel Configurations

A configuration that combines series and parallel diode connections.

 Illustrative Problem 3
Determine I, V1, V2, and VO below;

Solution:
 Illustrative Problem 4
Determine VO, I1, ID1, and ID2 of figure below.

Solution:
 HW 1

Determine the voltage Vo for the networks shown below.

 HW 2

Determine the current I and voltage Vo for the networks shown

below.
 HW 3

Determine the currents I1, I2, and ID2 for the network below.
 HW 4

Determine I and the voltage Vo1 and Vo2 for the network shown
below.
 HW 5
Determine ID and Vo for the circuit shown below.