DISCRETE SEMICONDUCTORS

DATA SHEET

BGY135; BGY136
VHF power amplifier modules
Product specification 1996 May 08
Supersedes data of June 1993
File under Discrete Semiconductors, SC09
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

FEATURES PINNING - SOT132B

• 12.5 V nominal supply voltage PIN DESCRIPTION
• 18 W output power. 1 RF input
2 ground
APPLICATIONS 3 VS1
• Mobile communication equipment operating directly 4 ground
from 12 V vehicle electrical systems. 5 VS2
6 ground
DESCRIPTION 7 RF output
The BGY135 and BGY136 are two-stage broadband RF Flange ground
amplifier modules in a SOT132B package. Each module
consists of two NPN transistor dies together with
lumped-element matching components.
handbook, halfpage

12 3 4 5 67

Top view MSB029

Fig.1 Simplified outline.

QUICK REFERENCE DATA

TYPE MODE OF f VS1; VS2 PD PL ZS; ZL

NUMBER OPERATION (MHz) (V) (mW) (W) (Ω)
BGY135 CW 132 to 156
12.5 150 ≥18 50
BGY136 CW 146 to 174

WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO inserts are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1996 May 08 2
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VS1 DC supply voltage − 15.6 V
VS2 DC supply voltage − 15.6 V
Vi RF input voltage − 25 V
Vo RF output voltage − 25 V
PD input drive power − 300 mW
PL load power − 25 W
Tstg storage temperature −40 +100 °C
Th heatsink operating temperature −20 +90 °C

MRC267
handbook,30
halfpage

PL
(W)

20

10

0
–50 0 50 100
Th (°C)

VS1 = VS2 ≤ 12.5 V; VSWR = 1 : 1.

Fig.2 Power derating curve.

1996 May 08 3
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 150 mW; VS1 = VS2 = 12.5 V; Th = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

f frequency
BGY135 132 − 156 MHz
BGY136 146 − 174 MHz
IQ2 leakage current VS1 = 0; PD = 0 − − 1 mA
PL load power 18 − − W
η efficiency adjust PD for PL = 18 W 38 45 − %
H2 second harmonic adjust PD for PL = 18 W − − −25 dBc
H3 third harmonic adjust PD for PL = 18 W − − −25 dBc
VSWRin input VSWR adjust PD for PL = 18 W − 1.5 3
stability VS1 = VS2 = 10.8 to 15.6 V; − − −60 dBc
PL = 2 to 20 W; VSWR = 3 : 1
ruggedness PD ≤ 300 mW;
VS1 = VS2 = 15.6 V duration 5 s; no degradation
PL < 25 W; VSWR = 50 : 1

MRC266 MRC261
35 handbook, 30
halfpage
PLhalfpage
handbook,
(W) f = 146 MHz
PL
30
(W)
161 MHz
f=
25 132 MHz
20 174 MHz
144 MHz
156 MHz
20

15

10
10

0 0
0 100 200 300 0 100 200 300
PD (mW) PD (mW)

VS1 = VS2 = 12.5 V. VS1 = VS2 = 12.5 V.

Fig.3 Load power as a function of drive power; Fig.4 Load power as a function of drive power;
BGY135; typical values. BGY136; typical values.

1996 May 08 4
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

MRC264 MRC259
60 60
handbook, halfpage handbook, halfpage
η η
(%) (%)

40 40

20 20

0 0
120 130 140 150 160 140 150 160 170 180
f (MHz) f (MHz)

VS1 = VS2 = 12.5 V; PL = 18 W. VS1 = VS2 = 12.5 V; PL = 18 W.

Fig.5 Efficiency as a function of frequency; Fig.6 Efficiency as a function of frequency;

BGY135; typical values. BGY136; typical values.

MRC274 MRC262
30 30
handbook, halfpage handbook, halfpage
VS = 12.5 V
PL PL
(W) (W)
VS = 12.5 V
10.8 V
20 20

10.8 V

10 10

0 0
120 130 140 150 160 140 150 160 170 180
f (MHz) f (MHz)

PD = 150 mW. PD = 150 mW.

Fig.7 Load power as a function of frequency; Fig.8 Load power as a function of frequency;
BGY135; typical values. BGY136; typical values.

1996 May 08 5
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

MRC265 MRC260
–20 –20
handbook, halfpage handbook, halfpage

H2, H3 H2, H3
(dBc) (dBc)

–40 –40

H2 H2

–60 H3 –60

H3

–80 –80
120 130 140 150 160 140 150 160 170 180
f (MHz) f (MHz)

VS1 = VS2 = 12.5 V; PL = 18 W. VS1 = VS2 = 12.5 V; PL = 18 W.

Fig.9 Harmonics as a function of frequency; Fig.10 Harmonics as a function of frequency;

BGY135; typical values. BGY136; typical values.

MRC268 MRC263
30 25
handbook, halfpage handbook, halfpage
PL
PL 146 MHz
132 MHz (W)
(W) 20
156 MHz
20
174 MHz
15

10
10

0 0
−25 0 50 100 –25 0 25 50 75 100
Tmb (°C)
Tmb (°C)

PD = 150 mW; VS1 = VS2 = 12.5 V. PD = 150 mW; VS1 = VS2 = 12.5 V.

Fig.11 Load power as a function of mounting base Fig.12 Load power as a function of mounting base
temperature; BGY135; typical values. temperature; BGY136; typical values.

1996 May 08 6
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

Test circuit information

handbook, full pagewidth

pin
1 2 3 4 5 6 7
numbers

C1 C5

C2 C6

L1 L2
Z1 Z2
C3 C7

C4 C8
IS1 = IS2 =
typ. 0.5 A typ. 2.5 A

input VS1 VS2 output

MRC273

Fig.13 Test circuit.

90
handbook, full pagewidth

50

MLB068

Dimensions in mm.

Fig.14 Printed-circuit board layout.

1996 May 08 7
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

List of components (see Fig.13)

COMPONENT DESCRIPTION VALUE CATALOGUE NO

C1, C5 multilayer chip capacitor 1 nF 4822 590 06614
C2, C6 tantalum capacitor 6.8 µF, 35 V 2022 001 00067
C3, C7 multilayer chip capacitor 10 nF 2222 852 47103
C4, C8 multilayer chip capacitor 100 nF 2222 852 47104
L1, L2 1 turn 0.5 mm copper wire on ferrite coil 1 µH 3122 108 20153
Z1, Z2 stripline; note 1 50 Ω
Note
1. The striplines are on a double copper-clad printed-circuit board, with epoxy dielectric (εr = 4.7), thickness 1⁄16 inch.

1996 May 08 8
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

PACKAGE OUTLINE

52.5
50.0
44.9
17.0
14.4
9.3 8.1
3.7
6.8 4.2
0.25
7.65
max
12 34 5 67

19.7

3.3

61.0 A

8.5
17.0 3.5

0.5 0.2 M A
52.5
MBC876
67.5

Dimensions in mm.

Fig.15 SOT132B.

1996 May 08 9
Philips Semiconductors Product specification

VHF power amplifier modules BGY135; BGY136

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 08 10