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TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212) 227400S
U.3.A. FAX (973) 376-8960

NPN Silicon Darlington Transistors

BD843
BD645
BD847
BD649
Eplbase power darlington transistors (62.5W)
BO 643, BD 645, BD 647, and BD 649 are monolithic NPN Silicon epibase power darlington
transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors
of the two transistors are electrically connected to the metallic mounting area. These
darlington transistors for AF applications are outstanding for particularly high current
gain. Together with BD 644, BO 646, BD 648, and BD 650, they are particularly suitable
for use as complementary AF push-pull output stages.

Type
BD643
BO 643/BD 644
BD64S
BO 645/8D 646
BD647
BD 647/BD 648
BD649
BD 649/BD 650
Insulating nipple
Mica washer
Spring washer
A 3 DIN 137
Chang* In dimensional drawings in preparation.

Approx. weight 18 g.Dlmanaion) In mm

Maximum ratings BD643 BD645 BD647 BD649

Collector-emitter voltage VCEO 45 60' 80 100 V
Collector-base voltage VCBO 45 60 80 100 V
Base-emitter voltage VEBO 5 5 5 5 V
Collector current h 8 8 8 8 A
Collector-peak current [t < 10 ms) ICM 12 12 12 12 A
Base current IB 150 150 160 150 mA
Storage temperature range -55 to + 150 °C
Junction temperature Ti 150 150 150 150 "C
Total power dissipation
Pfot 62,5 62,6 62,5 62,5 W

Thermal resistance
Junction to ambient air £80 £80 £80 £80 K/W
Junction to case11 flthJC &2 32 £2 K/W

N.I Semi-Conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable M (he time or going to p/ess. However VI
Scnii-L iinductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-C onducturs encourages
aistomcrs to verity ihiil datasheets are current before placing orders
 BD643
BD045
BO 647
BD649
Static characteristics (Tamb - 25 °C)
BD643 BD64S BD847 BD649
Collector cutoff current
(VCB " VcBmax) ^CBO <0.2 <0.2 <0.2 <0.2 mA
(VcB - VcBmax; Tamb = 100°C) /CBO <2 <2 <2 <2 mA
Collector cutoff current
(VCE * 0.5 Vc£maX) 1CEO <O.S <0.5 <0.5 <0.5 mA
Emitter cutoff current
(VEB = 5V) /EBO <B <5 <B <5 mA
Collector-emitter breakdown
voltage (/c = 1 00 mAI'l VUWCEO >4S >60 <80 >100 V
Collector-base breakdown
voltage (/e = 5 mA) V(Bn)CBO >4S >eo >80 >100 V
Emitter-base breakdown
voltage (4 =» 2 mA) V,BR)EBO >5 >5 >6 >5 V
DC current gain _
(/c- 0.5 A. VCE -3V) hfE 1600 1500 1500 1500
l/C = 3A,V C E = 3V) hre >760 >750 >750 >760 -
(/C = 6A,V CE = 3V) hK 750 750 750 750 -
Base-emitter forward voltage
(/c = 3A,V C E = 3V) VBE <2.5 <2.5 <2.5 <2.5 V
Collector-emitter saturation
voltage'
(/ c -3A,/ B = 12mA) VCEM, <2 <2 <2 <2 V
Forward voltage of the protective
diode at 4 = 3A VF 1.8 1.8 1.8 1.8 V

Dynamic characteristics (famb " 25 °C)

Transition frequency
(/c = 3A,V CE = 3V,f=1MHz) (V 7(>1) 7{>1) 7{>1) 7(>1) MHz
Cutoff frequency in common
emitter configuration
(/c = 3A;V C E = 3V) U 60 60 60 60 kHz