Documente Academic
Documente Profesional
Documente Cultură
• The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
• Sanken reserves the right to make changes without further notice to any products herein in
the interest of improvements in the performance, reliability, or manufacturability
of its products. Before placing an order, Sanken advises its customers to obtain the
latest version of the relevant information to verify that the information being relied upon
is current.
• Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property
rights or any other rights of Sanken or any third party which may result from its use.
• When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
• Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires
or damages to the society due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as components
in general purpose electronic equipment or apparatus (home appliances, office equipment,
telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
• When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written confirmation
of your specifications.
• The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
• Anti radioactive ray design is not considered for the products listed herein.
• This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
Contents SANKEN POWER TRANSISTORS
Transistor Selection Guide..2 B1420............................45 C4073 ...........................87 C5130 .........................129
Reliability.........................6 B1559............................46 C4130 ...........................88 C5239 .........................130
Temperature Derating in B1560............................47 C4131 ...........................89 C5249 .........................131
Safe Operating Area.........9 B1570............................48 C4138 ...........................90 C5271 .........................132
Accessories.....................9 B1587............................49 C4139 ...........................91 C5287 .........................133
Switching Characteristics B1588............................50 C4140 ...........................92 C5333 .........................134
Test Circuit....................10 B1624............................51 C4153 ...........................93 C5370 .........................135
Symbols and Term...........10 B1625............................52 C4296 ...........................94 D1769 .........................136
A1186............................11 B1626............................53 C4297 ...........................95 D1785 .........................137
A1215............................12 B1647............................54 C4298 ...........................96 D1796 .........................138
A1216............................13 B1648............................55 C4299 ...........................97 D2014 .........................139
A1262............................14 B1649............................56 C4300 ...........................98 D2015 .........................140
A1294............................15 B1659............................57 C4301 ...........................99 D2016 .........................141
A1295............................16 C2023 ...........................58 C4304 .........................100 D2017 .........................142
A1303............................17 C2837 ...........................59 C4381/2 ......................101 D2045 .........................143
A1386/A ........................18 C2921 ...........................60 C4388 .........................102 D2081 .........................144
A1488/A ........................19 C2922 ...........................61 C4418 .........................103 D2082 .........................145
A1492............................20 C3179 ...........................62 C4434 .........................104 D2083 .........................146
A1493............................21 C3263 ...........................63 C4445 .........................105 D2141 .........................147
A1494............................22 C3264 ...........................64 C4466 .........................106 D2389 .........................148
A1567............................23 C3284 ...........................65 C4467 .........................107 D2390 .........................149
A1568............................24 C3519/A ........................66 C4468 .........................108 D2401 .........................150
A1667/8.........................25 C3678 ...........................67 C4495 .........................109 D2438 .........................151
A1673............................26 C3679 ...........................68 C4511 .........................110 D2439 .........................152
A1693............................27 C3680 ...........................69 C4512 .........................111 D2493 .........................153
A1694............................28 C3830 ...........................70 C4517/A......................112 D2494 .........................154
A1695............................29 C3831 ...........................71 C4518/A......................113 D2495 .........................155
A1725............................30 C3832 ...........................72 C4546 .........................114 D2557 .........................156
A1726............................31 C3833 ...........................73 C4557 .........................115 D2558 .........................157
A1746............................32 C3834 ...........................74 C4662 .........................116 D2560 .........................158
A1859/A ........................33 C3835 ...........................75 C4706 .........................117 D2561 .........................159
A1860............................34 C3851/A ........................76 C4883/A......................118 D2562 .........................160
A1907............................35 C3852/A ........................77 C4886 .........................119 D2589 .........................161
A1908............................36 C3856 ...........................78 C4907 .........................120 SAH02 ........................162
A1909............................37 C3857 ...........................79 C4908 .........................121 SAH03 ........................163
B1257............................38 C3858 ...........................80 C5002 .........................122 Discontinued Parts
B1258............................39 C3890 ...........................81 C5003 .........................123 Guide ........................164
B1259............................40 C3927 ...........................82 C5071 .........................124
B1351............................41 C4020 ...........................83 C5099 .........................125
B1352............................42 C4024 ...........................84 C5100 .........................126
B1382............................43 C4064 ...........................85 C5101 .........................127
B1383............................44 C4065 ...........................86 C5124 .........................128
1
Transistor Selection Guide
■ VCEO-IC
800 C3678 C3679 C3680 C5124
C4020 C4300 C4301
C4299 C5002
C4304 C5003
C4445
C4908
600 C5249 C4706
550 C4517 C4518 C3927
C4517A C4518A C4557
C5239 C5287
500 C3830 C3831
C4907
400 C4073 C3832 C4138 C3833 C4139 C4140
C4418 C3890 C4296 C4297 C4298
C4662 C4130 C5071 C4434
C5130 C4546
380 D2141
300 C2023
C5333
250 D2017
230 A1294 A1295
C3263 C3264
200 A1668 D2016 C5271 A1493 A1494
C4382 D2557 C3857 C3858
D2558
180 A1859A A1386A A1216
C4883A A1492 C2922
A1673
C3519A
C3856
C4388
Collector–Emitter Voltage VCEO(V)
160 A1215
A1386
C2921
C3519
150 A1667 B1559 A1186 B1570 A1303 B1647 B1648
A1859 B1587 B1560 D2401 A1860 B1649 D2561
C4381 D2389 B1588 C3284 D2560
C4883 D2438 C2837 C4886 D2562
D2390
D2439
140 A1695
A1909
C4468
C5101
120 D2015 D1769 C3834 A1694 B1259 B1382 B1383
D1785 C3835 A1908 D2081 B1420 D2083
D2045 C4153 C4467 D2082
C5100
110 B1624
B1625
B1626
B1659
D2493
D2494
D2495
D2589
100 B1258
80 C3852A A1488A A1693
C3851A A1725
D2014 A1726
A1907
C4466
C4511
C4512
C5099
60 C3852 A1262 A1568
A1488 B1351
B1257 B1352
C3179 C4065
C3851
D1796
50 C4495 C4024 A1567 C4131
A1746
C4064
40 C5370
2 3 4 5 6 7 8 10 12 14 15 16 17 18 25
2
Transistor Selection Guide
■ Transistors for Switch Mode Power Supplies (for AC80 – 130V input)
■ Transistors for Switch Mode Power Supplies (for AC180 – 280V input)
3
Transistor Selection Guide
Transistors for Audio Amplifiers
■ Single Transistors
● Single Emitter
2SA1907/2SC5099 60
FM100 (TO3PF)
2SA1908/2SC5100 75
120 8
2SA1694/2SC4467 80 MT-100 (TO3P)
50 20
2SA1909/2SC5101 80 140 10
FM100 (TO3PF)
2SA1673/2SC4388 85 180 15
2SA1493/2SC3857 150 15
200 MT-200 (2-screw mount)
2SA1494/2SC3858 200 17
2SA1303/2SC3284 125 14 50
4
Transistor Selection Guide
■ Darlington Transistors
Type No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package
2SB1626 100
30 FM20 (TO220F)
2SD2495 60
2SB1659 100
50 MT-25 (TO220)
2SD2589 60
110 6
2SB1624 100
60 MT-100 (TO3P)
2SD2493 60
2SB1625 100
60
2SD2494 60
FM100 (TO3PF)
2SB1587 65
75 8
2SD2438 80
2SB1559 65
80 150 10 MT-100 (TO3P)
2SD2389 80
5000
2SB1588 50
80
2SD2439 55
15 FM100 (TO3PF)
2SB1649 45
85 200
2SD2562 70
2SB1560 50
100 10
2SD2390 55
150 MT-100 (TO3P)
2SB1647 45
130 15
2SD2560 70
2SB1570 50
150 12
2SD2401 55
150 MT-200 (2-screw mount)
2SB1648 45
200 17
2SD2561 70
5
Reliability
1. Definition of Reliability 4. Applications Considered on Reliability
The word reliablity is an abstract term which refers to the degree to a) The type and specifications of our transistors and semiconductor
which equipment or components, such as semiconductor devices, are devices vary depending on the application that will be required by
resistant to failure. Reliability can be and is often measured quantitatively. their intended use. Customer should, therefore, determine
Reliability is defined as “whether equipment or components (such as which type will best suit their purposes.
a semiconductor device) under given conditions perform the same at b) Note that high temperratures or long soldering periods must be avoid-
the end of a given period as at the beginning.” ed during soldering, as heat can be transmitted through external
leads into the interior. This may cause deterioration if the maximum
2. Reliability Function allowable temperature is exceeded.
In general, there are three types of failure modes in electronic com- c) When using the trasistor
Ma
ponents:
S ec
xA
under pulse operation or
ond
llo
1. Infant failure Max.Allowable
wa
ary wer
inductive load, the Safe
bl e
Current
Bre
Po
2. Random failure Operating Area (SOA) for
akd
Voltage Vceo(Max)
3. Wear-out failure
o
Collector Current Ic(A)
wn
the current and voltage must
Allowable
Loc
Max.
not be exceeded (Figure 2).
us
General Electronic
(a) Equipment or SOA(Safe Operating Area)
Components
(b)
Failure Rate (λ)
Semiconductor
Devices
Estimation
Collector-Emitter Voltage Vce(V)
Figure 2 SOA
Initial Random or Wear-out d) The reliability of transistors and semiconductor devices is greatly
Failure Chance Failure Failure
affected by the stress of junction temperature. If we accept in general
Time (t)
proceed in the form of Arrhenius equation, the relationship between
Figure 1 Bath Tub Curve the junction temperature Tj and lifespan L can be expressed with
These three types of failure describe “bathtub curve” shown in the following empirical formula
Figure 1. Infant failures can be attributed to trouble in the production n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4)
process and can be eliminated by aging befor shipment to customers, Tj
stricter control of the production process and quality control measures. It is, hence, very important to derate the junction temperature to
Semiconductor devices such as transistors, unlike electronic equipment, assure a high reliability rate.
take a considerable amount of time to reach the stage where wear-out
failure begins to occur. And, as shown in Figure 1 (b), they also last 5. Reliability Test
much longer than electronic equipment. This shows that the longer they Sanken bases its test methods and conditions on the following
are used the more stable they actually become. standards. Tests are conducted under these or stricter conditions,
The reduction that occurs in random failures can be approximated by The details of these are shown in Table 1.
Weibull distribution, logarithmic normal distribution, or gamma distri- • MIL-STD-202F (Test method for electrical and electronic com-
bution, but Weibull distribution best expresses the phenomenon that ponents)
occurs with transistors. • MIL-STD-750C (Test method for semiconductor equipment)
• JIS C 7021 (Endurance test and environmental test method for
3. Quantitative Expression of Reliability individual semiconductor devices)
While there are many ways to quantitatively express reliability, two • JIS C 7022 (Endurance test and environmental test method for
criteria, failure rate and life span, are generally used to define the integrated circuits of semiconductors)
reliability of semiconductors such as transistrors.
a) Failure Rate (FR) 6. Quality Assurance
Failure rate often refers to instantaneous failures or λ (t). In general To ensure high quality and high reliability, quality control and produc-
of reliability theory, however, the cumulative failure rate, or Relia- tion process control procedures are executed from the receipt of parts
bility Index, is through the entire production process. Our quality assurance system
r(t) is shown in Figure 3.
F⋅R= ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1)
N⋅t
Where N = Net quantity used, and
r(t) = Net quantitiy failed after t hours
If we assign t the arbitrary
6
Reliability
Table 1: Test Methods and Conditions
Tested at RH=85% and TA=85°C for the effects of the interaction between
Moisture Resistance Test temperature and humidity, and the effects of surface insulation between electrodes 5/1000hrs
and high temperature/high humidity.
Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle
Heat Cycle Test 30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic 5
changes caused by thermal expansion and shrinkage of the transistor.
Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for
Heat Shock Test mechanical faults and characteristic changes caused by thermal expansion and 5
shrinkage of transistor.
Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane
Soldering Heat Test in solder bath to check for characteristic changes caused by drastic temperature rises 5
of exterior lead wire.
Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for
Vibrations Test 2 hours each (total 6 hours) to check for characteristic changes caused by vibration 5
during operation and transportion.
Tested by dropping 10 times from 75 cm height to check for mechanical endurance
Drop Test 5
and characteristic changes caused by shock during handling.
∗ Reliability Standard : 60%
Material Purchasing
7
Reliability
7. Notes Regarding Storage, Characteristic Tests, and Handling
Since reliability can be affected adversely by improper storage
environment and handling methods during Characteristic tests,
please observe the following cautions.
a) Cautions for Storage
1. Ensure that storage conditions comply with the standard
temperature (5 to 35°C) and the standard relative humidity
(arround 40 to 75%) and avoid storage locations that
experience extreme changes in temperature or humidity.
2. Avod locations where dust or harmful gases are present,
and avoid direct sunlight.
3. Reinspect for rust in leads and solderbility that have been
stored for a long time.
b) Cautions for Characteristic Tests and Handling
1. When characteristic tests are carried out during inspection
testing and other standard test periods, protect the transistor
from surges of power from the testing device, shorts between
the transistor and the heatsink
c) Silicone Grease
When using a heatsink, please coat the back surface of the
transistor and both surfaces of the insulating plate with a thin
layer of silicone grease to improve heat transfer between the
transistor and the heatsink.
Recommended Silicone Grease
• G-746 (Shin-Etsu Chemical)
• YG6260 (Toshiba Silicone)
• SC102 (Dow Corning Toray Silicone)
d) Torque when Tightening Screws
Thermal resistance increases when tightening torque is small,
and radiation effects are decreased. When the torque is too
high, the screw can cut, the heatsink can be deformed, and/or
distortion can arise in the product’s frame. To avoid these
problems, Table 2 shows the recommended tightening torques
for each product type.
Table 2. Screw Tightening Torques
Package Screw Tightening Torque
MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm)
FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm)
MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm)
FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm)
MT200 (TO-3P two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm)
e) Soldering Temperature
In general, the transistor is subjected to high temperatures when
it is mounted on the printed circuit board, whether from flow solder
from a solderbath, or, in hand operations from a soldering iron.
The testing method and test conditions (JIS-C-7021 standards)
for a transistor’s heat resistance during soldering are:
At a distance of 1.5mm from the transistor’s main body,
apply 260°C for 10 seconds, and 350°C for 3 seconds.
However, please stay well within these limits and for as short
a time as possible during actual soldering.
8
Reliability
■ Temperature Derating in Safe Operating Area
Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating
temperature.
This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a
silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature
range of 260°C to 360°C.
Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is
set at 260°C.
Pc 100
lim
itin
re S/
a B
lim
Pc
itin
S/
B
Collector Current
lim
50 ar
lim
ea
itin
itin
ga
ga
rea
rea
Tc=25°C
0
0 50 100 150 200 250 300
Collector-Emitter Voltage VCE (V)
Case Temp Tc (°C)
Fig.1 Safe Operating Area Fig.2 Derating Curve of Safe Operating Area
Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe
operating area in order to obtain the derated current.
■ Accessories
✩ Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested.
✩ Sanken transistor case is a standard size, and can be used with any generally sold accessories.
• Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance • Insulation Bush for MT-25 (TO220)
ø3.2 +0.1
–0
2–ø3.2 +0.1
–0
ø3.75 +0.1
–0
12.0±0.1
±0.1
10.0
6.0±0.2
3.7±0.1
+0.2
7.0
24.0±0.1
14.0±0.1
3.1
±0.1
–0
20.0
2.5±0.2 1.5±0.2
5.0±0.1
7.0 ±0.1
24.38±0.1
19.4±0.1 R0.5 +0.2
24.0 –0 R0.5 39.0±0.1 R0.5
9
Switching Characteristics
■ Typical Switching Characteristics (Common Emitter)
VCC RL IC VB2 VBB1 VBB2 IB1 IB2 tr tstg tf
(V) (Ω) (A) (V) (V) (V) (A) (A) (µs) (µs) (µs)
IB2
0 IC –VCC Base
20µs Current 0 0
R2
IB1
IB2
D.U.T Collector
Current 0.1IC 0
50µs IB1
IC
0
0.9IC
R1
ton tstg tf
–VBB1 RL
GND 0
NPN +VBB1
IB2
0 IC VCC Base
50µs R1 Current 0 0
IB1
IB1
D.U.T Collector 0.9IC
Current 0
IB2
IC
0.1IC
0 R2
20µs ton tstg tf
–VBB2 RL
GND 0
Symbols
Symbol Item Definition
VCBO Collector-Base Voltage DC Voltage between Collector and Base when Emitter is open
VCEO Collector-Emitter Voltage Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction
VEBO Emitter-Base Voltage DC voltage between Emitter and Base when Collector is open
IC Collector Current DC current passing through Collector electrode
IB Base Current DC current passing through Base electrode
PC Collector Power Dissipation Power consumed at Collector junction
Tj Operating Junction Temperature Maximum allowable temperature value at absolute maximum ratings
Tstg Storage Temperature Maximum allowable range of ambient temperature at non-operation
ICBO Collector Cutoff Current Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base
IEBO Emitter Cutoff Current Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base
V(BR)CEO Collector-Emitter Saturation Voltage Breakdown voltage between Collector and Emitter when Base is open
hFE DC Current Gain Ratio of DC output current and DC input current at a specified voltage and current (Emitter common)
VCE(sat) Collector-Emitter Saturation Voltage DC voltage between Collector and Emitter under specified saturation conditions
VBE(sat) Base-Emitter Saturation Voltage DC voltage between Base and Emitter under specified saturation conditions
VFEC Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open
fT Cut-off Frequency Frequency at the specified voltage and current where hFE is 1 (0dB)
Cob Collector Junction capacitance Junction capacitance between collector and Base at a specified voltage and frequency
10
LAPT 2SA1186
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1186 Unit Symbol Conditions 2SA1186 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO –150 V ICBO VCB=–150V –100max 9.6 2.0±0.1
19.9±0.3
VEBO –5 V V(BR)CEO IC=–25mA –150min V
4.0
a
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ ø3.2±0.1
b
IB –2 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 100(Ta=25°C) W fT VCE=–12V, IE=1A 60typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–80V, f=1MHz 110typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
–10 –3 –10
Collector-Emitter Saturation Voltage V CE(s a t) (V )
A 0mA
A
0m –16
m
0
00
–2 mA
–4
–8 –120 –8
–8 0m A –2
–6 –6
–60mA
I C =–10A
p)
–4 –40mA –4
)
p)
Tem
emp
Tem
–1
eT
se
se
(Ca
Cas
I B =–20m A
Ca
–2 –2
˚C
˚C (
C(
–5A
125
25˚
–30
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E
25˚C
Typ 100
100 1
–30˚C
50 0.5
50
20 30 0.2
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10
60
Collecto r Curren t I C (A)
W
10
ith
p
ms
Ty
In
–5
fin
D
C
ite
he
40 50
at
si
nk
–1
20
Without Heatsink
–0.5 Natural Cooling
Without Heatsink
0 –0.2 3.5
0
0.02 0.1 1 10 –2 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
11
LAPT 2SA1215
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SA1215 Unit Symbol Conditions 2SA1215 Unit
VCBO –160 V ICBO VCB=–160V –100max µA 36.4±0.3 6.0±0.2
24.4±0.2
VCEO –160 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
2.1
7
IC –15 A hFE VCE=–4V, IC=–5A 50min∗
21.4±0.3
a
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz
2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF
3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
0.65 +0.2
-0.1
-0.1
B C E
VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–60 12 –5 5 –500 500 0.25typ 0.85typ 0.2typ b. Lot No.
A A A A
m 0m 0m 0m A
50 –60 –50 –40 –30
0m
–7
mA
–200
–1 50 m A –2 –10
–10 0mA
–8
p)
mp)
emp
em
eT
e Te
se T
–50mA –1 –5
Cas
I C =–10A
Cas
(Ca
–4
˚C (
˚C (
25˚C
125
I B =–20mA –5A
–30
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
DC Curr ent Gain h FE
1
100 Typ
100 25˚C
0.5
50 –30˚C
50
10 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
60 120
s
–10
Collector Curr ent I C (A)
D
p C
ith
Ty
In
–5
fin
ite
40 80
he
at
si
nk
–1
20 40
Without Heatsink
–0.5 Natural Cooling
Without Heatsink
5
0 –0.2 0
0.02 0.1 1 10 –2 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
12
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)
LAPT 2SA1216
Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SA1216 Unit SymboI Conditions 2SA1216 Unit
36.4±0.3 6.0±0.2
VCBO –180 V VCBO VCB=–180V –100max µA
24.4±0.2 2.1
VCEO –180 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
7
30min∗
21.4±0.3
IC –17 A hFE VCE=–4V, IC=–8A a
IB –5 A VCE(sat) IC=–8A, IB=–0.8A –2.0max V b
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 3
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1
A mA
A
m 0
–40
m
–1
00
–1.
00
–15 –7 –15
–5
A
–3 00 m
–2 00 mA –2
–10 –10
–150mA
p)
em
p)
)
emp
e T
–100mA
Tem
Cas
e T
–1
ase
–5 –5
˚C(
Cas
C(C
–50mA
125
˚C(
I C =–10A
25˚
–30
I B =–20mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC Cur rent Gain h F E
DC Curr ent Gain h F E
100 1
Transient Thermal Resistance
25˚C
100
Typ
–30˚C
50 0.5
50
10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
160
m
Cu t-off Fre quen cy f T (MH Z )
DC
–10
ith
Collect or Cur ren t I C (A)
T yp
40
In
fin
–5 120
ite
he
at
si
nk
80
20
–1
Without Heatsink 40
–0.5
Natural Cooling
Without Heatsink
5
0 –0.2 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
13
2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SA1262 Unit Symbol Conditions 2SA1262 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO –60 V ICBO VCB=–60V –100max µA 2.0±0.1
16.0±0.7
IC A hFE VCE=–4V, IC=–1A 40min
8.8±0.2
a ø3.75±0.2
–4
–0.6max V b
IB –1 A VCE(sat) IC=–2A, IB=–0.2A
PC 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ MHz 1.35
4.0max
12.0min
Tj 150 °C COB VCB=–10V, f=1MHz 90typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–20 10 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ b. Lot No.
–4 –1.5 –4
A A
0m –60m
–50m A
–8
–40m A
–30mA –1.0
–2 –20mA –2
)
emp
p)
mp)
e Tem
eT
e Te
Cas
–0.5
(Cas
(Cas
–10mA
˚C (
–1 –1
125
–30˚C
25˚C
I C =–3A
I B =–5mA
–2A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –0.5 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
500 200 5
125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E
100 25˚C
Typ
–30˚C
100
50
50
1
20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–5
M aximum Po wer Dissipat io n P C (W)
50
s
10
m
Cut- off F req uency f T (M H Z )
10
W
0m
ith
Collector Cur rent I C (A)
D
s
40 C 20
In
Typ
fin
ite
he
30 –1
at
si
nk
10
Without Heatsink
2
0 –0.1
0
0.005 0.01 0.05 0.1 0.5 1 3 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
14
LAPT 2SA1294
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1294 Unit Symbol Conditions 2SA1294 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO –230 V ICBO VCB=–230V –100max 9.6 2.0±0.1
19.9±0.3
–5 IC=–25mA –230min V
4.0
a
IC –15 A hFE VCE=–4V, IC=–5A 50min∗ ø3.2±0.1
b
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 130(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ b. Lot No.
–15 – 3 –15
5A
A
.0A
. .0 A
.0
–1 –1
–2
mA
–3
00
–5
–10 mA –2 –10
– 200
–1 00 mA
)
mp
mp)
)
emp
eTe
eTe
–5 –1 –5
seT
Cas
–50mA I C =–10A
Cas
(Ca
˚C (
˚C (
125
25˚C
–30
I B =–20mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
50 50 –30˚C
0.5
10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10
100
Cut-o ff F requ ency f T (MH Z )
DC
W
ith
Collector Curr ent I C (A)
–5
40
In
p
fin
Ty
ite
he
at
si
–1
nk
50
20 –0.5
Without Heatsink
Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
15
LAPT 2SA1295
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application : Audio and General
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SA1295 Unit Symbol Conditions 2SA1295 Unit
µA 36.4±0.3 6.0±0.2
VCBO –230 V ICBO VCB=–230V –100max
24.4±0.2
VCEO –230 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
2.1
7
IC A hFE VCE=–4V, IC=–5A 50min∗
21.4±0.3
–17 a
IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz
2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1
0.65 +0.2
-0.1
–17 – 3 –17
0A A
A
. .5 A
–1
.0
–2 – 1.0
–3
–15 –15
0 mA
–50
0mA
–30 –2
–10 mA –10
–200
p)
mp)
em
–1 00 mA
eT
e Te
–1
Cas
–5 I C =–10A –5
Cas
–50mA
˚C (
˚C (
125
25˚C
–30
I B =–20mA –5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –0.8 –1.6 –2.4 –3.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h F E
50 50 –30˚C 0.5
10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
m
s
M aximum Power Dissipa ti on P C (W)
–10 D 160
C
Cu t-of f Fr eque ncy f T ( MH Z )
–5
ith
Collect or Cur ren t I C (A)
40
In
p
fin
Ty 120
ite
he
at
–1
si
nk
–0.5 80
20
Without Heatsink
Natural Cooling
40
–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
16
LAPT 2SA1303
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1303 Unit Symbol Conditions 2SA1303 Unit
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO –150 V ICBO VCB=–150V –100max µA 9.6 2.0±0.1
19.9±0.3
VEBO –5 V V(BR)CEO IC=–25mA –150min V
4.0
a ø3.2±0.1
IC –14 A hFE VCE=–4V, IC=–5A 50min
b
IB –3 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 125(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ b. Lot No.
–3 –14
A A
A
–6 mA
m m mA
m
00 00 00
00
–3
00
–5 –4 mA
–200
–7
–12
–10
–2
–10 0mA
–8
p)
Tem
)
emp
p)
se
Tem
eT
(Ca
–50mA –5
Cas
–1
ase
˚C
I C =–10A
˚C (
–4
125
C (C
–30
25˚
I B =–20mA –5A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
DC Cur rent Gain h FE
–30˚C 0.5
50
50
20 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –14 –0.02 –0.1 –0.5 –1 –5 –10 –14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
s
10
60 100
0m
Cut- off F req uency f T (MH Z )
–10
W
Co lle ctor Cu rr ent I C (A)
ith
D
C
p
In
Ty
fin
–5
ite
he
40
at
si
nk
50
–1
20 Without Heatsink
Natural Cooling
–0.5
Without Heatsink
3.5
0 –0.2 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
17
LAPT 2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1386 2SA1386A Unit Symbol Conditions 2SA1386 2SA1386A Unit 4.8±0.2
15.6±0.4
5.0±0.2
2.0
1.8
9.6 2.0±0.1
VCBO –160 –180 V –100max –100max µA
ICBO
VCEO –160 –180 V VCB= –160 –180 V
19.9±0.3
µA
4.0
VEBO –5 V IEBO VEB=–5V –100max a ø3.2±0.1
4.0max
VCE(sat)
20.0min
PC 130(Tc=25°C) W IC=–5A, IB=–0.5A –2.0max V
3
Tj 150 °C fT VCE=–12V, IE=2A 40typ MHz
1.05 +0.2
-0.1 0.65 +0.2
-0.1
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 500typ pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
–40 4 –10 –10 5 –1 1 0.3typ 0.7typ 0.2typ b. Lot No.
–15 –3 –15
A A
m m –3 00 m A
A
0
00 40
m
–5 –
00
–7
–10 –2 –10
–150mA
–100mA
p)
mp)
mp)
em
e Te
eT
e Te
–5 –1 –5
Cas
(Cas
(Cas
–50mA
˚C (
25˚C
–30˚C
I C =–10A
I B =–20mA 125
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 3
DC Curr ent Gain h FE
125˚C
100
1
100 25˚C
Typ
–30˚C 0.5
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10 DC
100
Cut-o ff Fr eque ncy f T (MH Z )
–5
ith
Collecto r Cur ren t I C ( A)
p
40 Ty
In
fin
ite
he
at
–1
si
nk
Without Heatsink
–0.5 Natural Cooling 50
20
1.2SA1386
2.2SA1386A
–0.1
1 Without Heatsink
2 3.5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
18
2SA1488/1488A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Symbol 2SA1488 2SA1488A Unit Symbol Conditions 2SA1488 2SA1488A Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO –60 –80 V –100max –100max µA
ICBO
8.4±0.2
VCEO –60 –80 V VCB= –60 –80 V
16.9±0.3
VEBO –6 V IEBO VEB=–6V –100max µA ø3.3±0.2
a
IC –4 V(BR)CEO IC=–25mA –60min
0.8±0.2
A –80min V b
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=–2A, IB=–0.2A –0.5max V
13.0min
1.35±0.15
Tj 150 °C fT VCE=–12V, IE=0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 90typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–12 6 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ b. Lot No.
–4 –1.5 –4
A A
0m –60m
–50m A
–8
–40m A
–30mA –1.0
–2 –20mA –2
)
emp
p)
mp)
e Tem
eT
e Te
Cas
–0.5
(Cas
(Cas
–10mA
˚C (
–1 –1
–30˚C
125
25˚C
I C =–3A
I B =–5mA
–2A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –0.5 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
500 200 5
125˚C
Transient Thermal Resistance
DC Curr ent Gain h FE
DC C urrent G ain h FE
100 25˚C
Typ
–30˚C
100
50
50
1
20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
50 10
m in mm
s
Cu t-off Fre quen cy f T ( MH Z )
40 DC 20
Typ W
ith
–1 In
fin
30 ite
150x150x2
–0.5 he
1 00x 1 0 at
Without Heatsink 0x si
20 2 nk
Natural Cooling 10
50x50x2
10
–0.1
Without Heatsink
2
0 –0.05
0
0.005 0.01 0.05 0.1 0.5 1 3 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
19
2SA1492
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1492 Unit Symbol Conditions 2SA1492 Unit
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO –180 V ICBO VCB=–180V –100max µA 9.6 2.0±0.1
19.9±0.3
VEBO –6 V V(BR)CEO IC=–50mA –180min V
4.0
a
50min∗
ø3.2±0.1
IC –15 A hFE VCE=–4V, IC=–3A
b
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 130(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
–40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ b. Lot No.
–15 – 3 –15
6A
–0.
A
–1
4A
–0.
–10 –2 –10
–0 .1 A
mp)
Temp)
Temp
e Te
–5 –50mA –1 –5
Cas
(Case
(Case
˚C (
25˚C
–30˚C
I B =–20mA I C =–10A 125
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
DC Curr ent Gain h FE
DC Curr ent Gain h FE
25˚C
Transient Thermal Resistance
Typ
100
–30˚C 1
100
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
m
10 s
–10 0m 100
Cut- off F re quen cy f T (MH Z )
s
W
Typ
ith
Collector Cur rent I C (A)
D
In
–5 C
fin
20
ite
he
at
si
nk
–1 50
10
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
20
2SA1493
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SA1493 Unit Symbol Conditions 2SA1493 Unit
36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max µA 24.4±0.2 2.1
VCEO –200 V IEBO VEB=–6V –100max µA 2-ø3.2±0.1 9
7
21.4±0.3
IC –15 A hFE VCE=–4V, IC=–5A 50min∗ a
IB –5 VCE(sat) IC=–10A, IB=–1A – 3.0max V b
A
PC 150(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 3
0.65 +0.2
-0.1
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–60 12 –5 –10 5 –500 500 0.3typ 0.9typ 0.2typ b. Lot No.
–15 –3 –15
A mA
5A
–1 60
0
– mA
–1.
–400
–10 –2 –10
–1 00 mA
mp)
)
emp)
I B =–5 0m A
Temp
eTe
–5 –1 –5
(CaseT
Cas
(Case
I C =–15A
˚C (
25˚C
–30˚C
–10A 125
–5A
0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 –4 0 –1 –2
Collector-Emi tter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
25˚C 1
Transient Thermal Resistance
Typ 100
–30˚C
100
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Typ
D 10
C
Cut- off F re quen cy f T ( MH Z )
–10 0m 120
W
Co lle ctor Cu rr ent I C ( A)
s
ith
20
In
–5
fin
ite
he
80
at
si
nk
–1
10
–0.5 Without Heatsink 40
Natural Cooling
Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
21
2SA1494
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SA1494 Unit Symbol Conditions 2SA1494 Unit
µA 36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max
24.4±0.2
VCEO –200 V IEBO VEB=–6V –100max µA 2-ø3.2±0.1 9
2.1
7
IC hFE VCE=–4V, IC=–8A 50min∗
21.4±0.3
–17 A a
IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz
2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1
mA
.5
0
–60
–1
–15 –15
0mA
–40
A –2
–200m
–10 –10
–1 00 m A
mp)
)
Temp
)
e Te
Temp
–1
(Case
(Cas
–5 –50mA –5
(Case
I C =–15A
125˚C
–30˚C
25˚C
I B =–20mA –10A
–5A
0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC Curr ent Gain h FE
DC Curr ent Gain h FE
Typ 25˚C 1
Transient Thermal Resistance
100
100
–30˚C
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
160
10
Typ
Cut- off Fr equ ency f T (MH Z )
0m
–10
W
D
ith
Collector Curr ent I C (A)
C
20
In
–5
fin
120
ite
he
at
si
nk
80
–1
10
Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
22
LOW VCE (sa t) 2SA1567
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) Application : DC Motor Driver, Chopper Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Symbol 2SA1567 Unit Symbol Conditions 2SA1567 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO –50 V ICBO VCB=–50V –100max µA
VCEO –50 V IEBO VEB=–6V –100max µA
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–25mA –50min V
ø3.3±0.2
a
IC –12 A hFE VCE=–1V, IC=–6A 50min
0.8±0.2
b
IB –3 A VCE(sat) IC=–6A, IB=–0.3A –0.35max V
40typ MHz
±0.2
3.9
PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A
13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 330typ pF 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ b. Lot No.
0m
–15
00
–10 0m A
–2
–10 –10
I B=
–8 –1.0 –8
–60mA
I C= –
12A
–9A
–6 –40mA –6
–6A
mp)
p)
mp)
–3A
Tem
–1A
e Te
e Te
se
–4 –20mA –0.5 –4
(Cas
(Cas
(Ca
˚C
–30˚C
25˚C
–10mA
125
–2 –2
–5mA
0 0 0
0 –1 –2 –3 –4 –5 –6 –2 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–1V) (V C E =–1V)
500 500 4
125˚C
Typ
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E
25˚C
Transient Thermal Resistance
–30˚C
100 100 1
50 50 0.5
30 30 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
1m Natural Cooling
s Silicone Grease
30
Maximu m Power Dissi pation P C (W)
10
m
Typ 0m in mm
Cut- off Fr equ ency f T (M H Z )
40 s
–5 DC
Collector Cur rent I C (A)
W
ith
20
In
fin
30
ite
–1
he
150x150x2
at
–0.5
si
nk
23
E
( 250 Ω )
Equivalent
curcuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) Application : DC Motor Driver, Chopper Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Symbol 2SA1568 Unit Symbol Conditions 2SA1568 Unit
10.1±0.2 4.2±0.2
4.0±0.2
VCBO –60 V ICBO VCB=–60V –100max µA 2.8 c0.5
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–25mA –60min V
ø3.3±0.2
IC –12
+ A hFE VCE=–1V, IC=–6A 50min a
0.8±0.2
b
IB –3 A VCE(sat) IC=–6A, IB=–0.3A –0.35max V
PC 35(Tc=25°C) W VFEC IECO=–10A –2.5max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ b. Lot No.
–10 –1 00 mA –10
–2
I B=
–1.0
I C=
–8 –8
–60mA
–12
A
–9A
–6 –40mA –6
–6A
mp)
p)
mp)
Tem
–3 A
e Te
e Te
–0.5
se
–4 –4
–1A
(Cas
(Cas
(Ca
–20mA
˚C
–30˚C
25˚C
125
–2 –10mA –2
0 0 0
0 –1 –2 –3 –4 –5 –6 –7 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–1V) (V C E =–1V)
300 300 4
Typ 125˚C
25˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E
10 10
0.5
2 2 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
1m Natural Cooling
s Silicone Grease
30
Maximu m Power Dissi pation P C (W)
Typ 10
m
0m in mm
Cut- off Fr equ ency f T (M H Z )
40 s
–5 DC
Collector Cur rent I C (A)
W
ith
20
In
fin
30
ite
–1
he
150x150x2
at
–0.5
si
nk
24
2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application : TV Vertical Output, Audio Output Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Symbol 2SA1667 2SA1668 Unit Symbol Conditions 2SA1667 2SA1668 Unit
10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO –150 –200 V –10max –10max µA
ICBO
VCEO –150 –200
8.4±0.2
V VCB= –150 –200 V
16.9±0.3
VEBO –6 V IEBO VEB=–6V –10max µA ø3.3±0.2
a
IC –2 A V(BR)CEO IC=–25mA –150min –200min V
0.8±0.2
b
IB –1 A hFE VCE=–10V, IC=–0.7A 60min
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V
13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 20typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 60typ pF
0.85 +0.2
-0.1
0.45 +0.2 2.4±0.2
■Typical Switching Characteristics (Common Emitter)
-0.1
2.54 2.54
2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–20 20 –1 –10 5 –100 100 0.4typ 1.5typ 0.5typ b. Lot No.
–2.0 –3 –2
A
0m
–5
–1.6 –1.6
–2
–1.2 –1.2
mp)
Temp)
)
Temp
e Te
–0.8 I B =–5mA/Step –0.8
(Cas
(Case
(Case
–1
125˚C
–30˚C
25˚C
–0.4 –0.4
I C =–2A
–0 .5A –1A
0 0 0
0 –2 –4 –6 –8 –10 –2 –10 –100 –1000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–10V) (V C E =–10V)
400 400 5
125˚C
D C Cur r ent Gai n h F E
25˚C
Typ
–30˚C
100
100
1
40 30 0.5
–0.01 –0.1 –1 –2 –0.01 –0.1 –1 –2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Silicone Grease
20
Heatsink: Aluminum
s
ms
in mm
40 20
D
Cut- off Fr equ ency f T (M H Z )
–1 C
Typ
Collector Curr ent I C (A)
W
ith
30
In
150x150x2
fin
ite
1 00x 1 0
he
0x
2
at
20 10
–0.1
si
nk
Without Heatsink
Natural Cooling 50x50x2
10 1.2SA1667
2.2SA1668
Without Heatsink
1 2 2
0 –0.01
0
0.01 0.1 1 2 –1 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
25
2SA1673
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1673 Unit Symbol Conditions 2SA1673 Unit
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
VCEO –180 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–50mA –180min V
23.0±0.3
ø3.3±0.2
IC –15 A hFE VCE=–4V, IC=–3A 50min∗ a
1.6
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
3.0
PC 85(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
3.3
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
A 6A
–1 –0. A
–0.4
–10 –2 –10
–0 .1 A
mp)
)
p)
Temp
ase Tem
e Te
–5 –50mA –1 –5
Cas
(Case
˚C (
–30˚C (C
25˚C
125
I B =–20mA I C =–10A
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h F E
25˚C
Transient Thermal Resistance
Typ 100
–30˚C 1
100
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10 s
0m 80
Cut- off F req uency f T (MH Z )
Typ –10
s
Collecto r Cur rent I C (A)
20 D
ith
–5 C
In
60
fin
ite
–2
he
at
si
nk
–1 40
10
–0.5
Without Heatsink
Natural Cooling 20
–0.2
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
26
2SA1693
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1693 Unit Symbol Conditions 2SA1693 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO –80 V ICBO VCB=–80V –10max 9.6 2.0±0.1
19.9±0.3
4.0
IC –6 A hFE VCE=–4V, IC=–2A 50min∗ a ø3.2±0.1
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –1.5max V
PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.
0
0 0m 15 –1 00 m A
–
–2
–8 0m A
–4 –2 –4
–50mA
–30mA
mp)
)
mp)
Temp
e Te
–20mA
e Te
–2 –1 –2
Cas
(Case
(Cas
˚C (
I B =–10mA I C =–6A
–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h FE
Typ
25˚C
50
50
0.5
30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10 10
m
M aximum Power Dissipa ti on P C ( W)
Typ s
100ms
Cut -off Fre quen cy f T (M H Z )
–5
W
ith
Collector Curr ent I C (A)
20 DC 40
In
fin
ite
he
at
si
–1
nk
10 –0.5 20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
27
2SA1694
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1694 Unit Symbol Conditions 2SA1694 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
–10max
1.8
VCBO –120 V ICBO VCB=–120V 9.6 2.0±0.1
19.9±0.3
4.0
IC –8 A hFE VCE=–4V, IC=–3A 50min∗ a ø3.2±0.1
b
IB –3 A VCE(sat) IC=–3A, IB=–0.3A –1.5max V
PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
0m 0m
m
0 5
–1
50
–2 mA
–3
–100
–2
–50mA
–4 –4
mp)
mp)
mp)
–25mA
e Te
e Te
e Te
–1
Cas
(Cas
(Cas
–2 –2
˚C (
I C =–8A
I B =–10mA
–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 300 3
Typ 125˚C
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E
25˚C
100
100 1
–30˚C
50
50 0.5
30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000
Typ –5 DC 60
W
ith
Co lle ctor Cu rren t I C (A)
20
In
fin
ite
he
40
at
si
–1
nk
10
–0.5
20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1
0.02 0.05 0.1 0.5 1 5 8 0
–5 –10 –50 –100 –200 0 25 50 75 100 12 5 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
28
2SA1695
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1695 Unit Symbol Conditions 2SA1695 Unit
15.6±0.4 4.8±0.2
µA
5.0±0.2
2.0
VCBO –140 V ICBO VCB=–140V –10max
1.8
9.6 2.0±0.1
19.9±0.3
4.0
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ a ø3.2±0.1
b
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –0.5max V
PC 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
A
mA 0 0m 0m
00 –3 –2
0
0m
A
–4 –15
–8 –8
–7 5m A –2
–6 –6
–50mA
p)
–4 –4
mp)
)
Tem
Temp
–1
e Te
se
–25mA
(Ca
(Case
(Cas
–2
˚C
–2
I C =–10A
25˚C
125
–30˚C
I B =–10mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
DC Curr ent Gain h F E
Typ
Transient Thermal Resistance
25˚C
100 1
100
–30˚C
0.5
50 50
30 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10
Cut-o ff F requ ency f T (MH Z )
10
DC
ith
0m
Co lle ctor Cu rren t I C ( A)
–5
3m
20
s
In
Typ
fin
s
ite
he
50
10
at
si
ms
nk
–1
10
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
29
2SA1725
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SA1725 Unit Symbol Conditions 2SA1725 Unit
10.1±0.2 4.2±0.2
4.0±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 2.8 c0.5
8.4±0.2
VEBO V(BR)CEO IC=–25mA –80min V
16.9±0.3
–6 V
ø3.3±0.2
IC –6 A hFE VCE=–4V, IC=–2A 50min∗ a
0.8±0.2
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V
PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
±0.2
3.9
13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 1.35±0.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.
–6 –3 –6
m
A
0 mA
00 – 15 –1 00 m
A
–2
–5 –8 0m A
–4 –2 –4
–50mA
–3 –30mA
p)
mp)
Tem
)
emp
–20mA
e Te
–2 –1 –2
se
se T
(Ca
(Cas
(Ca
I B =–10mA I C =–6A
˚C
125
–30˚C
25˚C
–1 –4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
D C Cur r ent Gai n h F E
DC C urrent G ain h FE
Typ
25˚C
50 50
0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10
10
M aximum Po wer Dissipat io n P C (W)
Typ m
100ms s
–5
Cut -off Fre quen cy f T ( MH Z )
DC
ith
Collecto r Cur ren t I C (A)
20 20
In
fin
ite
he
–1
at
si
nk
–0.5
10 10
Without Heatsink
Natural Cooling
–0.1 Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
30
2SA1726
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SA1726 Unit Symbol Conditions 2SA1726 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 2.0±0.1
16.0±0.7
VEBO –6 V –80min V
50min∗
8.8±0.2
a ø3.75±0.2
IC –6 A hFE VCE=–4V, IC=–2A
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V
PC 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 1.35
4.0max
12.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 0.65 +0.2
-0.1
m
0m 50 A
0 –1 –1 00 m
–2
–8 0m A
–4 –2 –4
–50mA
–30mA
p)
mp)
Tem
)
emp
–20mA
e Te
–2 –1 –2
se
se T
(Ca
(Cas
(Ca
I B =–10mA I C =–6A
˚C
125
–30˚C
25˚C
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h FE
Typ
25˚C
50 50
0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10
100ms 10
Ma xim um Powe r Dissipation P C (W)
Typ m
–5 s 40
Cu t-of f Fr eque ncy f T (MH Z )
DC
ith
Collector Curr ent I C (A)
20
In
fin
30
ite
he
–1
at
si
nk
–0.5 20
10
Without Heatsink
Natural Cooling 10
–0.1
Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 1 25 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
31
LOW VCE (sat) 2SA1746
Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, Switch and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1746 Unit Symbol Conditions 2SA1746 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –70 V ICBO VCB=–70V –10max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO –50 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–25mA –50min V
23.0±0.3
ø3.3±0.2
IC –12(Pulse–20) A hFE VCE=–1V, IC=–5A 50min a
1.6
IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max V b
3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max V
3.3
Tj 150 °C fT VCE=–12V, IE=1A 25typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF
1.05 +0.2
-0.1
–10 –10
–70mA
–8 –1.0 –8
–50mA
p)
)
em
emp
–6 –6
mp)
seT
–30m A
seT
(Ca
eTe
(Ca
–4 –0.5 –4
(Cas
˚C
25˚C
125
I C =–10A
–30˚C
I B =–10mA
–2 –5A –2
–3A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –3 –10 –100 –1000 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–1V) (V C E =–1V)
500 500 4
125˚C
D C Cur r ent Gai n h F E
Typ
25˚C
1
–30˚C
50 50 0.2
–0.03 –0.1 –0.5 –1 –5 –10 –0.03 –0.1 –0.5 –1 –5 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
s
m
s
–10
Cu t-of f Fr eque ncy f T (MH Z )
30
Collector Curre nt I C (A)
Typ 40
W
–5
ith
In
fin
20
ite
he
at
si
20
nk
10 –1
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.3 0
0.1 1 10 –3 –10 –50 –100 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
32
2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) Application : Audio Output Driver and TV Velocity-modulation
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SA1859 2SA1859A Unit Symbol Conditions 2SA1859 2SA1859A Unit
10.1±0.2 4.2±0.2
4.0±0.2
VCBO –150 –180 V –10max µA 2.8 c0.5
ICBO
VCEO –150 –180 V VCB= –150 –180 V
8.4±0.2
16.9±0.3
VEBO –6 V IEBO VEB=–6V –10max µA
ø3.3±0.2
IC –2 A a
V(BR)CEO IC=–10mA –150min –180min V
0.8±0.2
b
IB –1 A hFE VCE=–10V, IC=–0.7A 60 to 240
PC 20(Tc=25°C) W VCE(sat) –1.0max
±0.2
3.9
IC=–0.7A, IB=–70mA V
13.0min
Tj 150 °C fT VCE=–12V, IE=0.7A 60typ MHz 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ
B C E b. Lot No.
–2 –3 –2
A
A
0m
5mA
0m
m
–1
00
–3
–6
–1
–10 mA
–2
–1 –1
mp)
p)
p)
I B =–5mA
aseTem
eTe
eTem
–1
Cas
(Cas
˚C (
–30˚C (C
25˚C
125
I C =–2A
–0.5A –1A
0 0 0
0 –2 –4 –6 –8 –10 –2 –5 –10 –50 –100 –500 –1000 0 –0.5 –1
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
300 300 7
125˚C
5
DC Cur rent Gain h FE
DC Curr ent Gain h F E
Typ 25˚C
50 50 1
–0.01 –0.1 –0.5 –1 –2 –0.01 –0.1 –0.5 –1 –2 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
s
10
80
D
0m
Cut -off Fre quen cy f T ( MH Z )
–1 C
W
Typ
s
ith
Collector Cur rent I C (A)
In
–0.5
fin
60
ite
he
10
at
si
nk
40
–0.1
Without Heatsink
–0.5
Natural Cooling
20
1.2SA1859
2.2SA1859A
Without Heatsink
1 2 2
0 –0.01
0.01 0.05 0.1 0.5 1 2 0
–1 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
33
LAPT 2SA1860
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1860 Unit Symbol Conditions 2SA1860 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –150 V ICBO VCB=–150V –100max µA 3.45 ±0.2
µA
5.5
VCEO –150 V IEBO VEB=–5V –100max
9.5±0.2
VEBO –5 V V(BR)CEO IC=–25mA –150min V
23.0±0.3
IC –14 A hFE VCE=–4V, IC=–5A 50min∗ a
ø3.3±0.2
1.6
IB –3 A VCE(sat) IC=–5A, IB=–500mA –2.0max V b
3.0
PC 80(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz
3.3
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
mA mA
00 500 400 00
00
–6 – – –3
mA
–7
–200
–10 –10
–2
–100 mA
p)
p)
Tem
)
emp
Tem
–5 –50mA –5
–1
se
eT
ase
(Ca
I C =–10A
Cas
C (C
˚C
˚C (
I B =–20mA
125
25˚
–5A
–30
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h FE
100 Typ 1
100 25˚C
–30˚C 0.5
50
50
20 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –14 –0.02 –0.1 –0.5 –1 –5 –10 –14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
1m
10 s
M aximum Power Dissipa ti on P C (W)
10 m
–10 s
0m
Cu t-off Fre quen cy f T (M H Z )
60 D 60
W
C s
ith
Collect or Cur ren t I C (A)
Typ –5
In
fin
ite
he
40 40
at
si
–1
nk
–0.5
20 Without Heatsink 20
Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05
0.02 0.1 1 10 0
–2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
34
2SA1907
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1907 Unit Symbol Conditions 2SA1907 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 3.45 ±0.2
µA
5.5
IEBO –10max
9.5±0.2
VCEO –80 V VEB=–6V
VEBO –6 V V(BR)CEO IC=–50mA –80min V
23.0±0.3
50min∗
ø3.3±0.2
IC –6 A hFE VCE=–4V, IC=–2A a
1.6
IB –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V b
3.0
PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
3.3
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
m
0m 50 A
0 –1 –1 00 m
–2
–5 –8 0m A
–4 –2 –4
–50mA
–3 –30mA
p)
mp)
Tem
)
emp
–20mA
e Te
–2 –1 –2
se
se T
(Ca
(Cas
(Ca
I B =–10mA I C =–6A
˚C
125
–30˚C
25˚C
–1 –4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
Typ
25˚C
50 50
0.5
30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10 1m
Ma xim um Powe r Dissipation P C (W)
Typ s
10
Cu t-of f Fr eque ncy f T ( MH Z )
10 ms
W
–5 0m
ith
s
Collecto r Cur rent I C ( A)
DC
20 40
In
fin
ite
he
at
si
nk
–1
10 20
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
35
2SA1908
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1908 Unit Symbol Conditions 2SA1908 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –120 V ICBO VCB=–120V –10max µA 3.45 ±0.2
µA
5.5
IEBO VEB=–6V –10max
9.5±0.2
VCEO –120 V
VEBO –6 V V(BR)CEO IC=–50mA –120min V
23.0±0.3
50min∗
ø3.3±0.2
IC –8 A hFE VCE=–4V, IC=–3A a
1.6
IB –3 A VCE(sat) IC=–3A, IB=–0.3A –0.5max V b
3.0
PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
3.3
Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
A
A
m m
m
00 50
–1
50
–2 mA
–3
–100
–2
–50mA
–4 –4
mp)
mp)
mp)
–25mA
e Te
e Te
e Te
–1
Cas
(Cas
(Cas
–2 –2
˚C (
I C =–8A
I B =–10mA
–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 300 4
125˚C
Typ
DC Curr ent Gain h FE
25˚C
100 100
1
–30˚C
0.5
50 50
30 30 0.2
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
–10 10
m
Ma xim um Powe r Dissipat io n P C (W)
10 s
0m
Typ s
Cut-o ff Fr eque ncy f T ( MH Z )
–5 DC 60
W
Collector Curr ent I C (A)
ith
20
In
fin
ite
he
40
at
si
–1
nk
10
–0.5
Without Heatsink 20
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 8 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
36
2SA1909
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1909 Unit Symbol Conditions 2SA1909 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –140 V ICBO VCB=–140V –10max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO –140 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–50mA –140min V
23.0±0.3
ø3.3±0.2
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ a
1.6
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –0.5max V b
3.0
PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
3.3
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
m m m A
00 00 00 A
–4 –3 –2 0m
–15
–8 –8
–7 5m A –2
–6 –6
–50mA
p)
–4 –4
mp)
)
Tem
Temp
–1
e Te
se
–25mA
(Ca
(Case
(Cas
–2
˚C
–2
I C =–10A
25˚C
125
–30˚C
I B =–10mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h FE
Typ
Transient Thermal Resistance
100 1
100 25˚C
–30˚C
0.5
50
50
30 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000
–10
10
Cu t-of f Fr eque ncy f T (MH Z )
60
W
10
ms
ith
Collector Curr ent I C (A)
–5
0m
20 D
In
C
s
Typ
fin
ite
he
40
at
si
nk
–1
10
–0.5
Without Heatsink 20
Natural Cooling
Without Heatsink
3.5
0 –0.1
0.02 0.1 1 10 0
–3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
37
(2 k Ω)(6 5 0Ω) E
Darlington 2SB1257 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
0.8±0.2
Symbol 2SB1257 Unit Symbol Conditions 2SB1257 Unit 15.6±0.2 5.5±0.2
3.45 ±0.2
VCBO –60 V ICBO VCB=–60V –10max µA
5.5
9.5±0.2
VCEO –60 V IEBO VEB=–6V –10max µA
23.0±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –4(Pulse–6) A hFE VCE=–4V, IC=–3A 2000min a
1.6
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V
3.0
3.3
PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max V
1.75 0.8
Tj 150 °C fT VCE=–12V, IE=0.2A 150typ MHz
16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 75typ pF 1.05 +0.2
-0.1
–6 –3 –4
mA
A
– 1 .8
3m
–1 .5 m A
2.
=–
–5
IB
–4 –2
–1.0mA
mp)
–0.8mA
)
–3 –2
Temp
)
Temp
e Te
–3A
(Cas
(Case
(Case
–2 –1 –2A
125˚C
25˚C
–1
–30˚C
I C =–1A
–1
0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.2 –0.5 –1 –5 –10 –50 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–2V) (V C E =–2V)
8000 8000 5
5000
Typ 5000
DC Cur r ent Gai n h F E
20 20 0.7
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
200 in mm
20
10
s
m
Cut- off F req uency f T (M H Z )
DC
s
Typ
Co lle ctor Cu rre nt I C ( A)
160
W
ith
In
–1 150x150x2
fin
120
ite
1 00x 1 0
he
0x
2
at
–0.5 10
si
nk
80
50x50x2
Without Heatsink
40 Natural Cooling
Without Heatsink
–0.1 2
0 –0.07 0
0.05 0.1 0.5 1 4 –3 –5 –10 –70 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
38
(3 k Ω)(1 0 0Ω) E
Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
2SB1258 B
Equivalent circuit C
Application : Driver for Solenoid, Relay and Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SB1258 Unit Symbol Conditions 2SB1258 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO –100 V ICBO VCB=–100V –10max µA
VCEO –100 V IEBO VEB=–6V –10max µA
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –100min V
ø3.3±0.2
IC –6(Pulse–10) hFE VCE=–2V, IC=–3A 1000min a
A
0.8±0.2
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V
PC 30(Tc=25°C) VBE(sat) IC=–3A, IB=–6mA –2max V
±0.2
3.9
W
13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.
–6 –3 –6
mA mA
–2.0
A
4
2.
4m
–
–1 .8 m A
3.
=–
–5 –5
IB
–4 –4
–0.9mA –2
–3 –3
mp)
)
Temp
Temp
e Te
(Cas
(Case
–2
(Case
–2
–6A
125˚C
25˚C
–4A
–30˚C
–1 –1 I C =–2A –1
0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –200 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
8000 8000 5
Typ
5000 5000
DC Curr ent Gain h FE
5˚C
12
˚C
1000 25
1000
500
0˚C
500 –3
1
100
80 30 0.5
–0.03 –0.1 –0.5 –1 –6 –0.03 –0.1 –0.5 –1 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Silicone Grease
Ma xim um Powe r Dissipation P C (W)
100
50
0µ
Heatsink: Aluminum
1m
0µ
10
–5
s
in mm
Cu t-off Fr eque ncy f T ( MH Z )
s
m
DC
s
Collector Cur rent I C (A)
80 20
W
ith
In
fin
60 –1 150x150x2
ite
he
100x100x2
at
–0.5
si
40 10
nk
39
(3 k Ω)(1 0 0Ω) E
Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)
2SB1259 B
Equivalent circuit C
Application : Driver for Solenoid, Relay and Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SB1259 Unit Symbol Conditions 2SB1259 Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO –120 V ICBO VCB=–120V –10max µA
VCEO –120 V IEBO VEB=–6V –10max mA
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –120min V ø3.3±0.2
a
IC –10(Pulse–15) A hFE VCE=–4V, IC=–5A 2000min
0.8±0.2
b
IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max V
±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max V
13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 145typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.
–15 –3 –10
A m A
A
0m 10
0m
–
–2
–5
A
–5m
–8
–10 –2
–2mA
–6
mp)
Temp
)
Temp
I C =–10A
e Te
I B =–1mA
(Case
–4
(Cas
(Case
–5 –1 –5A
125˚C
25˚C
–1A
–30˚C
–2
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.2 –1 –10 –100 –1000 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
20000 20000 5
10000 10000
Typ
D C Cur r ent Gai n h F E
5000 5000
5˚C
Transient Thermal Resistance
12
˚C
1000 25
1000
500 0˚C
500 –3 1
100
100 0.5
50
50 20 0.3
–0.03 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Natural Cooling
10
–10
Typ
0µ
Silicone Grease
M aximu m Power Dissipat io n P C (W)
1m
Heatsink: Aluminum
10
–5
s
in mm
Cut- off F req uency f T (MH Z )
DC
s
Co lle ctor Cu rren t I C (A)
20
W
ith
In
–1
fin
100 150x150x2
ite
–0.5
he
100x100x2
at
si
10
nk
Without Heatsink
Natural Cooling 50x50x2
–0.1
Without Heatsink
–0.05 2
0 –0.03 0
0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
40
(2 k Ω)(1 0 0Ω) E
Darlington 2SB1351 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SB1351 Unit Symbol Condition 2SB1351 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO –60 V ICBO VCB=–60V –10max µA
VCEO –60 V IEBO VEB=–6V –10max mA
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –12(Pulse–20) hFE VCE=–4V, IC=–10A 2000min a
A
0.8±0.2
b
IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max V
PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz 1.35±0.15
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–40 4 –10 –10 5 –20 20 0.7typ 1.5typ 0.6typ b. Lot No.
–20 –3 –20
A
–6m
A
0m
–4 m A
–1
–3 mA
–2m A –2
–10 –10
)
emp
)
emp
I B =–1mA I C =–10A
mp)
eT
se T
e Te
Cas
–1 –5A
(Ca
–1A
˚C (
(Cas
–5 –5
25˚C
125
–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
20000 20000 5
C
10000 5˚
DC Cur rent Gain h FE
10000 Typ 12
˚C
5000 25
5000 ˚C
–30
1
1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Natural Cooling
Silicone Grease
Ma ximum Po we r Dissipatio n P C (W)
1m
200 –10
Heatsink: Aluminum
10
s
m
Cut-o ff F requ ency f T (MH Z )
DC in mm
s
–5
Collecto r Cur ren t I C (A)
160 20
W
Typ
ith
In
fin
120 150x150x2
ite
–1
he
100x100x2
at
–0.5
si
80 10
nk
Without Heatsink
Natural Cooling 50x50x2
40
–0.1 Without Heatsink
2
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
41
(2 k Ω)(1 0 0Ω) E
Darlington 2SB1352 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
VCEO –60 V IEBO VEB=–6V –10max mA
23.0±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –12(Pulse–20) A hFE VCE=–4V, IC=–10A 2000min a
1.6
b
IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max V
3.0
PC 60(Tc=25°C) VBE(sat) IC=–10A, IB=–20mA –2.0max V
3.3
W
Tj fT 130typ 1.75 0.8
150 °C VCE=–12V, IE=1A MHz
16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF +0.2
1.05 -0.1
–20 –3 –20
A
–6m
A
m
–4 m A
10
=–
IB
–3 mA
–2m A –2
–10 –10
)
emp
)
emp
–1mA I C =–10A
mp)
eT
se T
e Te
Cas
–1 –5A
(Ca
–1A
˚C (
(Cas
–5 –5
25˚C
125
–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
20000 20000 5
C
10000 5˚
DC Cur rent Gain h FE
12
Transient Thermal Resistance
10000 Typ
˚C
5000 25
5000 ˚C
–30
1
1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
DC
Ma ximum Po we r Dissipatio n P C (W)
1m
200 –10
10
s
m
Cut-o ff F requ ency f T (MH Z )
–5
Collecto r Cur ren t I C (A)
160 40
W
Typ
ith
In
fin
120
ite
–1
he
at
–0.5
si
80 20
nk
Without Heatsink
Natural Cooling
40
–0.1 Without Heatsink
3.5
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
42
(2 k Ω) (80Ω) E
Darlington 2SB1382 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SB1382 Unit Symbol Conditions 2SB1382 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –120 V ICBO VCB=–120V –10max µA 3.45 ±0.2
5.5
9.5±0.2
VCEO –120 V IEBO VEB=–6V –10max mA
VEBO –6 V(BR)CEO IC=–10mA –120min V
23.0±0.3
V
ø3.3±0.2
IC –16(Pulse–26) A hFE VCE=–4V, IC=–8A 2000min a
1.6
IB –1 VCE(sat) IC=–8A, IB=–16mA –1.5max V b
A
3.0
PC 75(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V
3.3
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF
1.05 +0.2
-0.1
–26 –3 –16
A
m A
A
20 –12m
0m
–
–4
–2
p)
I C =–16A
–3m A
Tem
)
emp
mp)
–8
se
se T
e Te
(Ca
–8A
(Ca
–10
(Cas
I B =–1.5m A
˚C
–1 –4A
125
25˚C
–30˚C
–4
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
20000 20000 3
D C Cur r ent Gai n h F E
10000 10000
Transient Thermal Resistance
Typ 5˚C
12
5000 5000 1
˚C
25
˚C
– 30
0.5
1000 1000
10
1m 0µ
10 s s
M aximu m Power Dissipat io n P C (W)
Typ m
–10 s
Cut- off F req uency f T (MH Z )
DC 60
W
ith
Co lle ctor Cu rren t I C (A)
–5
In
fin
ite
he
50
at
40
–1
si
nk
–0.5
Without Heatsink
Natural Cooling 20
–0.1
43
(2 k Ω) (80Ω) E
Darlington 2SB1383 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SB1383 Unit Symbol Conditions 2SB1383 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO –120 V ICBO VCB=–120V –10max 9.6 2.0±0.1
19.9±0.3
V V(BR)CEO IC=–25mA V
4.0
a ø3.2±0.1
IC –25(Pulse–40) A hFE VCE=–4V, IC=–12A 2000min
b
IB –2 A VCE(sat) IC=–12A, IB=–24mA –1.8max V
PC 120(Tc=25°C) W VBE(sat) IC=–12A, IB=–24mA –2.5max V 2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 3
–25 –3 –25
.0 mA
–8 –6 .0 m A
–20 –20
I C =–25A
–2
–15 –15
–2.5m A
)
mp
p)
em
Te
)
emp
eT
se
–12A
–10 –10
(Ca
–1.5mA
eT
Cas
–1
Cas
5˚C
–6A
C(
12
25˚
˚C (
–1.0mA
–30
–5 –5
I B =–0.6mA
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –500 0 –1 –2 –2.6
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
20000 20000 2
10000 10000
DC Curr ent Gain h FE
5˚C
Transient Thermal Resistance
Typ 12 1
5000 5000
˚C
25
0.5
˚C
–30
1000 1000
500 500
Typ –50
Ma xim um Powe r Dissipation P C ( W)
50 100
Cu t-off Fre quen cy f T ( MH Z )
1m
W
10
ith
Collector Curr ent I C (A)
s
m
40 DC
In
s
–10
fin
ite
he
30 –5
at
si
nk
50
20
–1
10 Without Heatsink
–0.5
Natural Cooling
Without Heatsink
3.5
0 –0.2 0
0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
44
(2 k Ω) (80Ω) E
Darlington 2SB1420 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SB1420 Unit Symbol Conditions 2SB1420 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO –120 V ICBO VCB=–120V –10max 9.6 2.0±0.1
19.9±0.3
4.0
a ø3.2±0.1
IC –16(Pulse–26) A hFE VCE=–4V, IC=–8A 2000min
b
IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max V
PC 80(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V 2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 3
–26 –3 –16
A
m A
A
0
–2 –12m
0m
–4
–2
p)
I C =–16A
–3m A
Tem
)
emp
mp)
–8
se
se T
e Te
(Ca
–8A
(Ca
–10
(Cas
I B =–1.5m A
˚C
–1 –4A
125
25˚C
–30˚C
–4
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
20000 20000 3
DC Cur rent Gain h F E
10000 10000
Transient Thermal Resistance
Typ 5˚C
12
5000 5000 1
˚C
25
0 ˚C
–3
0.5
1000 1000
10
1m 0µ
10 s s
M aximum Po we r Dissipatio n P C (W)
Typ m
s
–10
Cut-o ff F requ ency f T (MH Z )
DC 60
W
ith
Collecto r Cur ren t I C (A)
–5
In
fin
ite
he
50 40
at
–1
si
nk
–0.5
Without Heatsink
Natural Cooling
20
–0.1
45
(7 0 Ω ) E
Darlington 2SB1559 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SB1559 Unit Symbol Conditions 2SB1559 Unit
4.8±0.2
µA
15.6±0.4
5.0±0.2
VCBO –160 ICBO VCB=–160V –100max
2.0
V
1.8
9.6 2.0±0.1
19.9±0.3
4.0
IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V
PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V 2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz 3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No.
(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
.5
mA
–8 –3 –8
–2
mA A
–2.0 – 1 .8 m
–10
A
– 1 .5 m
–1. 3m A
–0.8m A –2 –8A
–4 –0.5m A –6A
–4
p)
mp)
I C =–4A
Tem
)
emp
e Te
I B =–0.3mA –1
se
se T
(Ca
Cas
(Ca
–2 –2
˚C
˚C (
25˚C
125
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
DC C urrent G ain h FE
Typ
DC C urrent G ain h FE
25˚C
10000
10,000 –30˚C 1
5000
5,000 0.5
–10 10
10
M aximu m Power Dissipat io n P C (W)
m
80 0m s
Cu t-of f Fr eque ncy f T (MH Z )
–5 D s
60
W
Typ C
ith
Collector Curr ent I C (A)
In
fin
60
ite
he
–1 40
at
si
nk
40
–0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
46
(7 0 Ω ) E
Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
2SB1560 B
Equivalent circuit C
5.0±0.2
VCBO –160 V ICBO VCB=–160V –100max
2.0
1.8
9.6 2.0±0.1
19.9±0.3
4.0
IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V
PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V
2
4.0max
20.0min
Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.
–10 . 5m –3 –10
–2 mA
mA
– 2 .0
–10
–1 .5m A
–8 –1. 2mA –8
–2
–6 –0.8m A –6
–10A
–0.6m A
–7A
mp)
)
Temp
)
–4 –4
Temp
I B =–0.4mA I C =–5A
e Te
–1
(Case
(Cas
(Case
125˚C
–2 –2
–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50000 3
125˚C
DC Curr ent Gain h F E
Typ
10000 25˚C 1
10,000
1000
10
Maxim um Power Dissipation P C (W)
10 m
80 –10 0m s
Cut- off F req uency f T (M H Z )
s
W
–5 DC
ith
Co lle ctor Cu rre nt I C ( A)
In
fin
60 Typ
ite
he
50
at
–1
si
nk
40
–0.5
Without Heatsink
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
47
(7 0 Ω ) E
Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)
2SB1570 B
Equivalent circuit C
7
5000min∗
21.4±0.3
IC –12 A hFE VCE=–4V, IC=–7A a
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V b
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz 3
230typ 0.65 +0.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz pF 1.05 +0.2
-0.1
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 5.45±0.1 3.0 +0.3
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.
–12 –3 –12
A
0 m –2 .0 m A
–1
–2 .0m A
–10 –10
–8 –1.2m A –2 –8
–1.0 mA
–0.8m A –10A
–6 –6
mp)
–0.6mA –7A
)
mp)
Temp
e Te
I C =–5A
e Te
–4 –1 –4
I B =–0.4mA
(Cas
(Case
(Cas
125˚C
–30˚C
25˚C
–2 –2
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50000 2
125˚C
D C Cur r ent Gai n h F E
Typ 1
25˚C
10,000 10000
–30˚C 0.5
5,000 5000
0.1
1000
1,000 800
–0.2 –0.5 –1 –5 –10–12 –0.2 –0.5 –1 –5 –10 –12 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
M aximu m Power Dissip ation P C (W)
–10 m
80 10 s
Cut- off F re quen cy f T (MH Z )
0m 120
W
–5 s
Collecto r Cur rent I C (A)
ith
DC
In
fin
60 Typ
ite
he
80
at
–1
si
nk
40
–0.5
Without Heatsink 40
20 Natural Cooling
–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
48
(7 0 Ω ) E
Darlington 2SB1587 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SB1587 Unit Symbol Conditions 2SB1587 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –160 V ICBO VCB=–160V –100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V
23.0±0.3
IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ ø3.3±0.2
a
IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V
1.6
b
3.0
PC 75(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V
3.3
Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No.
(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
.5
mA
–8 –3 –8
–2
A A
–2.0
m – 1 .8 m
–10
– 1 .5 m A
–1. 3m A
–0.8m A –2 –8A
–0.5m A –6A
–4 –4
p)
mp)
I C =–4A
Tem
)
emp
e Te
I B =–0.3mA –1
se
se T
(Ca
Cas
–2 –2
(Ca
˚C
˚C (
125
25˚C
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
DC Cur rent Gain h FE
Typ
D C Cur r ent Gai n h F E
25˚C
10000
10,000 –30˚C 1
5000
5,000 0.5
–10 10
10
Maximu m Power Dissi pation P C (W)
m
80 0m s
Cut- off F req uency f T (M H Z )
–5 D s 60
C
W
Typ
ith
Collect or Cur ren t I C (A)
In
fin
60
ite
he
–1 40
at
si
nk
40 –0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
49
(7 0 Ω ) E
Darlington 2SB1588 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SB1588 Unit Symbol Conditions 2SB1588 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –160 V ICBO VCB=–160V –100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V
23.0±0.3
IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ ø3.3±0.2
a
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V
1.6
b
3.0
PC 80(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V
3.3
Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 2.15
1.05 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.
m
–10 .5 –3 –10
–2 mA
mA
– 2 .0
–10
–1 .5m A
–8 –1. 2mA –8
–2
–6 –0.8m A –6
–10A
–0.6m A
–7A
mp)
)
)
Temp
–4 –4
Temp
I C =–5A
e Te
I B =–0.4mA
–1
(Case
(Cas
(Case
125˚C
–2 –2
–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50,000 3
125˚C
DC Cur rent Gain h FE
Typ
1
10,000 10,000 25˚C
1,000
10
Maxim um Power Dissip ation P C (W)
–10 10 m
80 0m s
Cut -off Fre quen cy f T (M H Z )
s
W
60
ith
–5
Co lle ctor Cu rre nt I C (A)
DC
In
fin
60 Typ
ite
he
40
at
–1
si
nk
40
–0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
50
(7 0 Ω ) E
Darlington 2SB1624 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2493) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SB1624 Unit Symbol Conditions 2SB1624 Unit
4.8±0.2
µA 15.6±0.4
5.0±0.2
VCBO –110 V ICBO VCB=–110V –100max
2.0
1.8
9.6 2.0±0.1
VCEO –110 V IEBO VEB=–5V –100max µA
VEBO –5 V V(BR)CEO IC=–30mA –110min V
19.9±0.3
4.0
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–5A, IB=–5mA –2.5max V
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V
2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.
–6 –3 –6
A
A
.4m
–0 .3 m A
–5m
–0
–4 –2 –4
–5A
p)
)
mp)
Tem
emp
e Te
–2 –1 –2
se T
se
(Ca
Cas
(Ca
˚C
˚C (
25˚C
125
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 5
50,000
125˚C
Typ
Transient Thermal Resistance
D C Cur r ent Gai n h F E
25˚C
10,000 10,000
–30˚C
5,000 5,000
1,000 1
1,000
500
500
0.5
200 100
–0.2 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 5 10 50 100 5 00 1000 2000
Typ –10
Maxim um Power Dissipation P C ( W)
100
–5 10
m
Cut- off F req uency f T (M H Z )
10 s
ith
Co lle ctor Cu rre nt I C (A)
0m
80 s 40
In
DC
fin
ite
he
–1
60
at
si
–0.5
nk
40 20
51
(7 0 Ω ) E
Equivalent circuit C
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –110 V ICBO VCB=–110V –100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –110min V
23.0±0.3
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ ø3.3±0.2
a
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V
1.6
A b
3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V
3.3
Tj 150 °C fT VCE=–12V, IE=0.5A –100typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz –110typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.
A
m
m
.5 (V CE =–4V)
–1
–6 –0 –3 –6
A
A
.4m
–0 .3 m A
–5m
–0
–5
–4 –2 –4
–5A
–3
I B =–0. 1mA I C =–3A
p)
mp)
)
Tem
emp
e Te
–2 –1 –2
se T
se
(Ca
Cas
(Ca
˚C
˚C (
25˚C
125
–1
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 5
50000
125˚C
Typ
DC Cur r ent Gai n h F E
25˚C
Transient Thermal Resistance
10,000 10000
–30˚C
5,000 5000
1000 1
1,000
500
500
0.5
200 100
–0.2 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Typ –10
Ma xim um Powe r Dissipation P C ( W)
100
–5 10
m
s
Cut -off Fre quen cy f T (M H Z )
10
ith
0m
Collector Curr ent I C (A)
80 s 40
In
DC
fin
ite
he
–1
60
at
si
nk
–0.5
40 20
Without Heatsink
–0.1 Natural Cooling
20
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
52
(7 0 Ω ) E
Darlington 2SB1626 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SB1626 Unit Symbol Conditions 2SB1626 Unit
4.2±0.2
µA
10.1±0.2
4.0±0.2
VCBO –110 V ICBO VCB=–110V –100max 2.8 c0.5
8.4±0.2
VEBO –5 V V(BR)CEO IC=–30mA –110min V
16.9±0.3
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ a
ø3.3±0.2
0.8±0.2
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max b
A V
PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V
±0.2
3.9
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz
13.0min
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 1.35±0.15
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.
A
m
5m (V C E =–4V)
–1
.
Collector-Emitter Saturation Voltage V C E (s at) (V )
–6 –0 –3 –6
mA
A
.4
–0 .3 m A
–5m
–0
–4 –2 –4
–5A
p)
)
mp)
Tem
emp
e Te
–2 –1 –2
se T
se
(Ca
Cas
(Ca
˚C
˚C (
25˚C
125
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 5.0
50000
125˚C
Typ
DC Cur rent Gain h F E
25˚C
10,000 10000
–30˚C
5,000 5000
1.0
1000
1,000
500
500 0.5
–10
M aximu m Power Dissipa tion P C (W)
100 Typ 10
m
–5 10 s
Cut-o ff F requ ency f T (MH Z )
0m
ith
Collecto r Cur ren t I C (A)
s
80 D 20
In
C
fin
ite
he
60
at
–1
si
nk
–0.5
40 10
Without Heatsink
Natural Cooling
20
–0.1 Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
53
(7 0 Ω ) E
Darlington 2SB1647 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SB1647 Unit Symbol Conditions 2SB1647 Unit
VCBO ICBO –100max µA 15.6±0.4 4.8±0.2
5.0±0.2
–150 V VCB=–150V
2.0
1.8
9.6 2.0±0.1
VCEO –150 V IEBO VEB=–5V –100max µA
VEBO –5 V V(BR)CEO IC=–30mA –150min V
19.9±0.3
4.0
IC –15 A hFE VCE=–4V, IC=–10A 5000min∗ a ø3.2±0.1
IB VCE(sat) –2.5max b
–1 A IC=–10A, IB=–10mA V
PC 130(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=2A 45typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF
1.05 +0.2
-0.1 0.65 +0.2
-0.1
–1 .0m A
–10 –2 –10
I C =–15A
–0. 5m A
p)
Tem
)
I C =–1 0A
emp
mp)
se
se T
I B =–0.3mA
(Ca
e Te
I C =–5A
(Ca
–5 –1 –5
˚C
Cas
125
25˚C
˚C (
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emi tter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
50,000 50000 3
125˚C
DC Cur r ent Gai n h F E
Typ 25˚C
1
–30˚C
10,000 10000
0.5
5,000 5000
100
W
ith
40
In
fin
ite
he
at
si
nk
50
20
Without Heatsink
3.5
0 0
0.02 0.05 0.1 0.5 1 5 10 0 25 50 75 100 125 150
Emitter Current I E (A) Ambient Temperature Ta(˚C)
54
( 7 0Ω ) E
Darlington 2SB1648 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SB1648 Unit Symbol Conditions 2SB1648 Unit
VCBO –150 V ICBO VCB=–150V –100max µA 36.4±0.3 6.0±0.2
7
IC –17 A hFE VCE=–4V, IC=–10A
21.4±0.3
a
IB –1 A VCE(sat) IC=–10A, IB=–10mA –2.5max V b
PC 200(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
2
Tj 150 fT VCE=–12V, IE=2A 45typ MHz
4.0max
20.0min
°C
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF 0.65 +0.2
-0.1
1.05 +0.2
-0.1
(V CE =–4V)
–1
–1 .5 m A
–50
–15 15
)
mp
–0.8 mA –2
Te
I C =–15A
–10 10
se
(Ca
–0.5mA
I C =–1 0A
5˚C
p)
)
emp
Tem
12
eT
I B =–0.3mA I C =–5A
ase
–1
Cas
–5 5
C (C
˚C (
25˚
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
50,000 50000 2
125˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
Typ 25˚C 1
–30˚C
10,000 10000
0.5
5,000 5000
160
Cut-o ff F requ ency f T (MH Z )
W
ith
40
In
fin
120
ite
he
at
si
nk
80
20
40
Without Heatsink
5
0 0
0.02 0.05 0.1 0.5 1 5 10 0 25 50 75 100 12 5 150
Emitter Current I E (A) Ambient Temperature Ta(˚C)
55
(7 0 Ω ) E
Darlington 2SB1649 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SB1649 Unit Symbol Conditions 2SB1649 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –150 V ICBO VCB=–150V –100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V
23.0±0.3
IC –15 A hFE VCE=–4V, IC=–10A 5000min∗ ø3.3±0.2
a
IB VCE(sat) IC=–10A, IB=–10mA –2.5max V
1.6
–1 A b
3.0
PC 85(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
3.3
Tj 150 °C fT VCE=–12V, IE=2A 45typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF 2.15
+0.2
1.05 -0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E b. Lot No.
–40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ
–1 .0m A
–10 –2 –10
I C =–15A
–0. 5m A
p)
Tem
)
I C =–1 0A
emp
mp)
se
seT
I B =–0.3mA
(Ca
eT e
I C =–5A
(Ca
–5 –1 –5
˚C
Cas
125
25˚C
˚C (
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
50,000 50000 3
125˚C
DC Cur rent Gain h FE
Typ 25˚C
1
–30˚C
10,000 10000
0.5
5,000 5000
80
Cut-o ff F requ ency f T (MH Z )
40
ith
In
60
fin
ite
he
at
si
nk
40
20
20
Without Heatsink
3.5
0 0
0.02 0.05 0.1 0.5 1 5 10 0 25 50 75 100 125 150
Emitter Current I E (A) Ambient Temperature Ta(˚C)
56
( 7 0Ω ) E
Darlington 2SB1659 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SB1659 Unit Symbol Conditions 2SB1659 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO –110 V ICBO VCB=–110V –100max µA 2.0±0.1
16.0±0.7
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗
8.8±0.2
a ø3.75±0.2
4.0max
12.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.
A
m
5m (V CE =–4V)
–1
.
–6 –0 –3 –6
A
Collector-Emitter Saturation Voltage V C E (s at) (V)
A
.4m
–0 .3 m A
–5m
–0
–0. 2m A
–4 –2 –4
–5A
p)
I B =–0. 1mA I C =–3A
Tem
)
emp
mp)
se
eT e
–2 –1 –2
seT
(Ca
Cas
(Ca
˚C
125
˚C (
25˚C
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40000 5
50000
125˚C
Typ
D C Cur r ent Gai n h F E
25˚C
DC Cur rent Gain h FE
10000 10000
–30˚C
5000 5000
1000 1
1000
500
500
0.5
200 100 0.4
–0.02 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
100 Typ
40
Cut-o ff F requ ency f T (M H Z )
W
ith
80
In
fin
30
ite
he
60
at
si
nk
20
40
10
20
Without Heatsink
2
0 0
0.02 0.05 0.1 0.5 1 5 6 0 25 50 75 100 125 150
57
2SC2023
Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC2023 Unit Symbol Conditions 2SC2023 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 300 V ICBO VCB=300V 1.0max mA 2.0±0.1
16.0±0.7
VEBO 6 V V(BR)CEO IC=25mA 300min V
8.8±0.2
a ø3.75±0.2
IC 2 A hFE VCE=4V, IC=0.5A 30min
b
IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V
PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz 1.35
4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 75typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1
0m A
IB =20
mp)
mp)
1 1
p)
e Te
ase Tem
ase Te
A /s to p
(Cas
I B =2 0m
1
25˚C (C
125˚C
–30˚C (C
2A
I C =1A
0 0 0
0 1 2 3 4 0 0.1 0.2 0.3 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 5
DC Cur rent Gain h F E
˚C
Transient Thermal Resistance
25˚C
50 50 ˚C 1
–30
0.5
10 10 0.2
3 10 100 1000 2000 3 5 10 50 100 500 1000 2000 1 10 100 1000 2000
Collector Current I C (mA) Collector Current I C (mA) Time t(ms)
Heatsink: Aluminum
1m
5m
in mm
20
Typ
Cut-o ff F reque ncy f T (MH Z )
30
ms
s
D
Collector Curre nt I C (A)
C
ith
1
In
fin
ite
0.5
he
10 20
at
150x150x2
si
nk
100x100x2
0.1 10
Without Heatsink 50x50x2
0.05 Natural Cooling
Without Heatsink
2
0 0.02 0
–0.003 –0.01 –0.05 –0.1 –0.5 –1 2 10 100 500 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
58
LAPT 2SC2837
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC2837 Unit Symbol Conditions 2SC2837 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 150 V ICBO VCB=150V 100max 9.6 2.0±0.1
19.9±0.3
4.0
a
IC 10 A hFE VCE=4V, IC=3V 50min∗ ø3.2±0.1
b
IB 2 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=80V, f=1MHz 60typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
mA 300m
A
400
A
8 200m 8
A
160m
2
12 0m A
6 6
80mA
4 4
p)
p)
40mA
em
I C =10A
Tem
1
eT
as
se
(C
I B =20mA
(Ca
2 2
5A 5˚C
˚C
˚C
12
–30
25
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h FE
Typ 25˚C
100 100
–30˚C 1
50 50
0.5
20 20 0.2
0.02 0.1 1 10 0.02 0.05 0.1 0.5 1 5 10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
100
s
10
Cu t-off Fr eque ncy f T ( MH Z )
D
ith
Collector Curren t I C ( A)
Typ C
80
In
5
fin
ite
he
60 50
at
si
nk
40 1
Without Heatsink
0.5 Natural Cooling
20
Without Heatsink
0.2 3.5
0 0
–0.02 –0.1 –1 –6 2 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
59
LAPT 2SC2921
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC2921 Unit Symbol Conditions 2SC2921 Unit
6.0±0.2
µA
36.4±0.3
VCBO 160 V ICBO VCB=160V 100max
24.4±0.2 2.1
VCEO 160 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9
7
50min∗
21.4±0.3
IC 15 A hFE VCE=4V, IC=5A a
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V b
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1
mA mA mA
A
60
0 500 400
0m
mA
75
300
A
200m
10 15 0m A 2 10
10 0m A
p)
p)
em
50mA
Tem
5 1 5
eT
as
se
(C
(Ca
I C =10A
I B =20mA 5˚C
˚C
12
˚C
–30
5A
25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 2
125˚C
D C Cur r ent Gai n h F E
DC Cur rent Gain h F E
100 Typ 1
100 25˚C
50 –30˚C 0.5
50
10 20 0.1
0.02 0.1 0.5 1 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
M aximu m Power Di ssip ation P C (W)
m
Typ s
Cut- off F re quen cy f T (MH Z )
60 D 120
10
W
C
Collector Curre nt I C (A)
ith
In
fin
5
ite
he
40 80
at
si
nk
20 1 40
Without Heatsink
Natural Cooling
0.5
Without Heatsink
5
0 0.3 0
–0.02 –0.1 –1 –10 2 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
60
LAPT 2SC2922
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC2922 Unit Symbol Conditions 2SC2922 Unit
36.4±0.3 6.0±0.2
VCBO 180 V ICBO VCB=180V 100max µA
24.4±0.2 2.1
VCEO 180 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9
7
30min∗
21.4±0.3
IC 17 A hFE VCE=4V, IC=8V a
IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V b
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1
1A
A mA
A
0m 600 mA
70
1.5
500
15 15
A
400m
mA
300
A 2
200m
10 10
100 mA
p)
em
p)
I C =10A
Tem
eT
1
5 5
as
se
50mA
(C
(Ca
5˚C
5A
˚C
12
I B =20mA
˚C
–30
25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 2.4
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 2
125˚C
DC Cur rent Gain h F E
DC C urrent G ain h FE
100 100 1
Typ 25˚C
–30˚C
50 50 0.5
10 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
160
s
Cut -off Fre quency f T ( MH Z )
60 DC
W
Typ 10
ith
Collector Cur rent I C (A)
In
fin
5 120
ite
he
40
at
si
nk
80
1
20
Without Heatsink 40
0.5
Natural Cooling
Without Heatsink
5
0 0.2 0
–0.02 –0.1 –1 –5 –10 2 10 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
61
2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC3179 Unit Symbol Conditions 2SC3179 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 80 V ICBO VCB=80V 100max µA 2.0±0.1
16.0±0.7
VEBO 6 V V(BR)CEO IC=25mA 60min V
8.8±0.2
a ø3.75±0.2
IC 4 A hFE VCE=4V, IC=1V 40min
b
IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max V
PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A 15typ MHz 1.35
4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 60typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
20 10 2 10 –5 200 –200 0.2typ 1.9typ 0.29typ b. Lot No.
4 4
A
m
A 80m
00 60mA
=1
IB
1.0
3 3
40mA
30mA
2 2
p)
)
)
em
mp
mp
20mA 0.5
eT
Te
Te
3A
as
se
se
(C
(Ca
Ca
1 10mA 1 5˚C
C(
2A
˚C
12
25˚
–30
I C =1 A
0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
500 200 5
DC C urrent G ain h FE
D C Cur r ent Gai n h F E
125˚C
Transient Thermal Resistance
100
Typ 25˚C
100
–30˚C
50
50 1
20 20 0.5
0.01 0.1 0.5 1 4 0.02 0.1 0.5 1 4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
5
s
10
Cut- off F req uency f T (M H Z )
0m
30
W
s
ith
Co lle ctor Cu rren t I C ( A)
D 20
In
C
fin
ite
he
20 Typ
at
si
nk
10
62
LAPT 2SC3263
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3263 Unit Symbol Conditions 2SC3263 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 230 V ICBO VCB=230V 100max 9.6 2.0±0.1
19.9±0.3
5 V
4.0
a
IC 15 A hFE VCE=4V, IC=5A 50min∗ ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 130(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
A A A
0A
0 5 1.0
2. 1.
3.
mA
600
mA
400
10 2 10
A
200m
10 0m A
Tem )
p
p)
em
p)
Tem
eT
5 1 5
50mA I C =10A
as
se
se
(C
Ca
(Ca
5˚C
C(
˚C
12
I B =20mA 25˚
–30
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC C urrent G ain h FE
DC Curr ent Gain h F E
100 100
Typ 25˚C
1
–30˚C
50 50
0.5
10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector C urrent I C (A) Collector Current I C (A) Time t(ms)
10
m
s
Maxim um Power Di ssip ation P C (W)
80
10 100
Cut- off F requ ency f T (MH Z )
DC
ith
Collector Curr ent I C (A)
Typ 5
In
fin
60
ite
he
at
si
nk
40 1 50
0.5
20 Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –10 3 10 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
63
LAPT 2SC3264
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC3264 Unit Symbol Conditions 2SC3264 Unit
36.4±0.3 6.0±0.2
VCBO 230 V ICBO VCB=230V 100max µA 24.4±0.2 2.1
VCEO 230 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9
7
21.4±0.3
IC 17 A hFE VCE=4V, IC=5A 50min∗ a
IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V b
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
∗hFE Rank O(50 to 100), Y(70 to 140)
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1
A 0 A A
3 .0 2. 1.5
A
15 1.0 15
60 0mA
A
400m 2
10 10
A
200m
p)
mp)
10 0m A
em
e Te
eT
1
Cas
5 I C =10A 5
(Cas
50mA ˚C (
–30˚C
125
25˚C
I B =20mA 5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2 3
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Curr ent Gain h FE
100 100
25˚C
Typ
1
–30˚C
50
50
0.5
10
10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
m
s
Ma xim um Powe r Dissipat io n P C (W)
80 160
10 DC
Cut-o ff Fr eque ncy f T ( MH Z )
W
ith
Co lle ctor Cu rrent I C ( A)
Typ 5
In
fin
60 120
ite
he
at
si
nk
40 1 80
0.5
20 Without Heatsink
Natural Cooling 40
Without Heatsink
5
0 0.1
–0.02 –0.1 –1 –10 3 10 100 300 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
64
LAPT 2SC3284
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3284 Unit Symbol Conditions 2SC3284 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 150 V ICBO VCB=150V 100max 9.6 2.0±0.1
19.9±0.3
5 V V(BR)CEO IC=25mA
4.0
a
IC 14 A hFE VCE=4V, IC=5A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 125(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
60 12 5 10 –5 0.5 –0.5 0.2typ 1.5typ 0.35typ b. Lot No.
mA
A
0 400 mA
0m
50 300
75
12
A
200m
10
15 0m A
2
8 10 0m A
p)
p)
50mA 5
em
Tem
1
eT
4
se
as
(Ca
(C
I C =10A 5˚C
I B =20mA
˚C
˚C
12
–30
25
5A
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
–30˚C
0.5
50 50
20 20 0.1
0.02 0.1 0.5 1 5 10 14 0.02 0.1 0.5 1 5 10 14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10 s
Typ 0m 100
Cut-o ff F reque ncy f T (MH Z )
60 10 s
W
D
Collector Curren t I C ( A)
ith
C
In
fin
5
ite
he
40
at
si
nk
50
1
20
Without Heatsink
0.5 Natural Cooling
Without Heatsink
3.5
0 0.2 0
–0.02 –0.1 –1 –10 3 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
65
LAPT
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)
2SC3519/3519A
Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3519 2SC3519A Unit Symbol Conditions 2SC3519 2SC3519A Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 160 180 V 100max 9.6 2.0±0.1
ICBO
VCEO 160 180 V VCB= 160 180 V
VEBO 5 V IEBO 100max µA
19.9±0.3
VEB=5V
4.0
a ø3.2±0.1
IC 15 A V(BR)CEO IC=25mA 160min 180min V
b
IB 4 A hFE VCE=4V, IC=5A 50min∗
PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 50typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
0.2typ b. Lot No.
40 4 10 10 –5 1 –1 1.3typ 0.45typ
A mA
A
m
500 mA
0m
60
0 400
70
mA
300
A
200m
10 2 10
10 0m A
p)
)
I C =10A
em
mp
5 1 5
eT
Te
50mA
as
se
(C
(Ca
C
I B =20mA 5A 5˚
˚C
12
˚C
–30
25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 300 3
DC Cur rent Gain h FE
DC Curr ent Gain h F E
125˚C
100 100 1
Typ 25˚C
–30˚C 0.5
50 50
10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
ms
M aximum Power Dissipa ti on P C (W)
10
100
Cut-o ff F reque ncy f T (MH Z )
60 DC
W
Typ 5
ith
Co lle ctor Cu rre nt I C (A)
In
fin
ite
he
40
at
1
si
nk
Without Heatsink
0.5 Natural Cooling 50
1.2SC3519
20 2.2SC3519A
0.1
1 2 Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –5 –10 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
66
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3678 Unit Symbol Conditions 2SC3678 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
VCBO 900 ICBO 100max
1.8
V VCB=800V 9.6 2.0±0.1
19.9±0.3
4.0
hFE 10 to 30 a
IC 3(Pulse6) A VCE=4V, IC=1A ø3.2±0.1
b
IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
500mA 400mA (I C /I B =5) (V CE =4V)
3 3
Collector-Emitter Saturation Voltage V C E (sa t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
300mA
1 V B E (sat)
200 mA
2 2
e Temp)
25˚C (Cas
mp)
mp)
Temp)
p)
e Te
100mA (Case
ase Tem
ase Te
125˚C
(Cas
e m p)
25˚C (C
1 1
125˚C
I B =50mA
–55˚C (C
eT
2 5 Cas
(
˚C
˚C
–55
V C E (sat) 5˚C
12
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 8 3
t on • t st g• t f ( µ s)
125˚C
5
t s tg
DC Curr ent Gain h F E
25˚C V C C 250V
I C :I B1 :–I B2
=2:0.3:1Const.
1
Switching T im e
–55˚C
1
tf
10
0.5 0.5
t on
5 0.2 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 5 10 50 100 500 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 80
5 5
Maxim um Power Dissip ation P C (W)
10
0µ
60
W
s
ith
Co lle ctor Cu rren t I C (A)
In
fin
ite
he
1 1 40
at
si
nk
Without Heatsink
0.5 0.5 Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1.0A 20
Duty:less than 1%
Without Heatsink
0.1 3.5
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
67
2SC3679
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3679 Unit Symbol Conditions 2SC3679 Unit
15.6±0.4 4.8±0.2
5.0±0.2
2.0
µA
1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1
19.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 800min V
4.0
a ø3.2±0.1
IC 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30
b
IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
250 125 2 10 –5 0.3 –1 1max 5max 1max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
700mA 600mA (I C /I B =5) (V C E =4V)
5 5
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )
500mA
4 400 mA 4
300mA
3 3
mp)
200mA
)
Temp
p)
e Te
ase Tem
V B E (sat)
(Cas
(Case
2 1 2
I B =100mA –55˚C (Case Temp)
125˚C
–55˚C (C
25˚C (Case Temp)
25˚C
e Temp)
125˚C (Cas
m p)
C
1 1
–5 5 ˚C
25˚
Te
se
Ca
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
t on• t s t g • t f (µ s)
5 t s tg
125˚C
DC Cur rent Gain h F E
V C C 250V
Transient Thermal Resistance
1
25˚C I C :I B 1 :–I B2
=2:0.3:1Const.
0.5
Switching T im e
–55˚C
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 100
10 10
10 1m 10
10
m 0µ
M aximum Power Dissipa ti on P C (W)
s s s
µs
5 5
10
0m
W
s
ith
Collector Curren t I C ( A)
In
fin
( Tc
1 1
ite
=2
he
5
0.5 0.5 50
at
C)
si
nk
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than1%
Without Heatsink
3.5
0.01 0.01 0
5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
68
2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3680 Unit Symbol Conditions 2SC3680 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1
19.9±0.3
4.0
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 ø3.2±0.1
b
IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 6typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
250 83 3 10 –5 0.45 –1.5 1max 5max 1max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
7 7
1A
700m A
Base-Emitter Saturation Voltage V B E ( s a t) (V )
6 V B E (sat) 6
1
500mA
p)
300 mA ase Tem
4 25˚C (C 4
mp)
)
Temp
p)
)
e Te
200mA Temp
ase Tem
(Case
125˚C
(Cas
(Case
)
emp
I B =100mA
125˚C
–55˚C (C
eT
25˚C
2 2
as
(C
˚C
C
25
5˚
12
V C E (sat) 5˚C
–5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
12
t on• t s t g • t f (µ s)
5˚
25˚C C 5 t s tg
DC Cur rent Gain h F E
V C C 250V 1
I C :I B 1 :I B2 =2:0.3:–1Const.
–55˚C
0.5
Switching T im e
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 120
10 10
10 1m 0µ 10
m s
s
M aximum Power Dissipa ti on P C (W)
s 100
5 5
W
ith
Collector Curren t I C ( A)
In
fin
1 1
ite
he
0.5 0.5
at
si
nk
50
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.01 0.01 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
69
2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 600 V ICBO VCB=600V 1max mA 2.0±0.1
16.0±0.7
V
8.8±0.2
10 to 30 a ø3.75±0.2
IC 6(Pulse12) A hFE VCE=4V, IC=2A
b
IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V 1.35
4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 45typ pF 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
6 2 6
1A 80 0m A
Base-Emitter Saturation Voltage V B E (sa t) (V )
5 60 0m A 5
4 400 mA 4
300mA V B E (sat)
3 1 3
p)
200mA –55˚C (Case Tem
mp)
Temp)
)
m p)
25˚C (Case
mp
)
emp
e Te
Te
2 2
2 5 e Te
p)
ase Tem
se T
I B =100mA 125˚C (C
se
(Cas
(Ca
as
˚C
(Ca
(C
–55˚C
˚C
C
1 5˚ 1
25˚C
125
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1. 2 1.4
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 7 4
t on• t s t g • t f (µ s)
5
125˚C
DC Cur rent Gain h F E
t s tg
25˚C V C C 200V
I C :I B 1 :I B2 = 10:1:–2
–55˚C 1
Switching T im e
1
0.5
t on
10
0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 6 0.2 0.5 1 5 6 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 50
10
10 0µ
s 10
M aximum Power Dissipa ti on P C (W)
5 5 40
1m
W
s
10
ith
Collect or Curr ent I C (A)
In
D
fin
C
30
ite
1 1
he
at
0.5 0.5
si
nk
20
Without Heatsink
Natural Cooling
0.1 Without Heatsink 0.1 L=3mH
Natural Cooling IB2=–0.5A 10
0.05 0.05 Duty:less than 1%
Without Heatsink
2
0.02 0.02 0
7 10 50 100 500 600 50 100 500 600 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
70
2SC3831
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO 600 V ICBO VCB=600V 1max mA 9.6 2.0±0.1
19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 500min V
4.0
a ø3.2±0.1
IC 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30
b
IB 4 A VCE(sat) IC=5A, IB=1A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1 . 3 max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 8typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 40 5 10 –5 0.5 –1.0 1max 4.5max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
10 10
Collector-Emitter Saturation Voltage V CE(s a t) (V )
A
1A
.2
800 mA
Base-Emitter Saturation Voltage V B E (sa t) (V )
=1
V B E (sat)
IB
1
8 60 0m A 8
400 mA p)
6 ase Tem 6
25˚C (C
p)
Temp
mp)
(Case
Tem
)
125˚C
Temp
200mA
)
e Te
4
mp
se
Te
(Ca
(Cas
(Case
se
˚C
100mA
a
25˚C
(C
125
˚C
–55˚C
2 C
5˚ 2
25
12
5 ˚C
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
t on• t s t g • t f (µ s)
125˚C 5
t s tg
DC Cur rent Gain h F E
25˚C 1
V C C 200V
I C :I B1 :I B2 =10:1:–2
–5 5˚C
0.5
Switching T im e
0.5 t on
10
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 100
10
1m 0µ
s
10 s 10
M aximum Power Dissipa ti on P C (W)
5 5
10
W
ms
ith
Collect or Curr ent I C (A)
In
D
fin
C
ite
1 1
he
50
at
si
0.5 0.5
nk
Without Heatsink
Without Heatsink Natural Cooling
0.1 Natural Cooling 1 L=3mH
I B 2 =–0.5A
0.05 0.05 Duty:less than 1%
Without Heatsink
0.02 3.5
0.01 0
8 10 50 100 500 600 50 100 500 600 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
71
2SC3832
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC3832 Unit Symbol Conditions 2SC3832 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 500 V ICBO VCB=500V 100max µA 2.0±0.1
16.0±0.7
VEBO 10 V IC=25mA 400min V
8.8±0.2
a ø3.75±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V 1.35
4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 0.65 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
7 7
60 0m A
Base-Emitter Saturation Voltage V B E(s a t) (V )
A
0m
6 6
80
400mA
V B E (sat)
1
300mA
e Temp)
–55˚C (Cas
4 mp) 4
200mA e Te
25˚C (Cas
p)
Tem
)
mp)
emp
)
Temp
(Case
125˚C
p)
e Te
se
se T
2 5 Tem
(Ca
I B =100mA
(Cas
(Ca
2 2
˚C
e
˚C
as
125
25˚C
–55˚C
(C
5 ˚C
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 4
t on • t s t g• t f ( µ s)
125˚ C 5 t s tg
DC Cur rent Gain h F E
25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–30 ˚C
Sw it ching Time
1
1
0.5
t on
10
0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 50
10
0µ
10 s 10
M aximum Power Dissipa ti on P C (W)
40
5
W
5
ith
Collect or Curr ent I C (A)
In
fin
30
ite
he
at
si
1 1
nk
Without Heatsink 20
Natural Cooling
0.5 0.5
Without Heatsink L=3mH
Natural Cooling –IB2=1A
Duty:less than 1% 10
Without Heatsink
0.1 2
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
72
2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit 4.8±0.2
15.6±0.4
5.0±0.2
2.0
1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1
19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
4.0
a ø3.2±0.1
IC 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30
b
IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 28.5 7 10 –5 0.7 –1.4 1.0max 3.0max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
12 12
A
1000m
Base-Emitter Saturation Voltage V B E (s a t) (V )
80 0m A
10 10
V B E (sat)
1
8 8
Temp)
–55˚C (Case
400m A
e Temp)
6 25˚C (Cas 6
p)
mp)
Tem
emp)
)
se T
Temp
e Te
)
˚C (Ca
2 5 Temp
se
200mA 125
(Ca
4 4
(Cas
(Case
˚C
e
˚C
as
25˚C
125
I B =100mA
(C
–55˚C
2 5˚ 2
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 8 2
t o n • t st g• t f ( µ s)
125˚C 5
t s tg
Transient Thermal Resistance
DC Curr ent Gain h FE
1
25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–30˚C 0.5
1
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 100
10
0µ
s
10 10
Maximu m Power Di ssip ation P C (W)
1ms
10
5 5
DC
ms
W
(T
ith
Collect or Curr ent I C ( A)
In
25
fin
1
ite
C
1
)
he
50
at
0.5 0.5
si
nk
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 –IB2=1A
Duty:less than 1%
Without Heatsink
0.01 3.5
0.01 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
73
2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC3834 Unit Symbol Conditions 2SC3834 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA 2.0±0.1
16.0±0.7
VEBO 8 V V(BR)CEO IC=50mA 120min V
8.8±0.2
a ø3.75±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V 1.35
4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max b. Lot No.
7 2.6 7
mA mA
200 150
6 6
mA
100 2
5 5
60mA
A
4 40m 4
p)
mp)
Tem
5A
)
Temp
e Te
3 20 mA 3
3A
se
1
I C= 1
(Ca
(Cas
(Case
˚C
A
2 2
25˚C
125
I B =10mA
–30˚C
1 1
0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 300 4
1 2 5 ˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
Typ
100 C
25˚
100
˚C
–30 1
50
50
0.5
20 20 0.3
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
40
5
Cut- off F req uency f T (M H Z )
W
10
ith
Collector Curr ent I C (A)
ms
20
In
fin
30
ite
he
1
at
si
nk
0.5 20
10 Without Heatsink
Natural Cooling
10
0.1
Without Heatsink
2
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
74
2SC3835
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3835 Unit Symbol Conditions 2SC3835 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 200 V ICBO VCB=200V 100max 9.6 2.0±0.1
19.9±0.3
4.0
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 ø3.2±0.1
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V
PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
7 2.6 7
mA mA
200 150
6 6
mA
100 2
5 5
60mA
A
4 40m 4
p)
mp)
Tem
5A
)
Temp
e Te
3 20 mA 3
3A
se
1
I C= 1
(Ca
(Cas
(Case
˚C
A
2 2
25˚C
125
I B =10mA
–30˚C
1 1
0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 300 5
1 2 5 ˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
Typ
100 C
25˚
100
˚C
–30
50
50 1
0.5
20 20 0.4
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
5
Cut- off F req uency f T (M H Z )
10
50
ith
Collector Curr ent I C (A)
ms
20
In
fin
ite
40
he
1
at
si
nk
30
0.5
10 Without Heatsink
Natural Cooling 20
10
0.1
Without Heatsink
3.5
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
75
2SC3851/3851A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC3851 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 80 100 V 100max µA
ICBO
8.4±0.2
VCEO 60 80 V VCB= 80 100 V
16.9±0.3
VEBO 6 V IEBO VEB=6V 100max µA ø3.3±0.2
a
IC 4
0.8±0.2
A V(BR)CEO IC=25mA 60min 80min V b
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V
13.0min
1.35±0.15
Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 60typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) B C E a. Type No.
12 6 2 10 –5 200 –200 0.2typ 1typ 0.3typ b. Lot No.
4 4
60 m A
A
0m
50mA
=7
IB
40mA
1.0
30mA
20mA
p)
2 2
Tem
)
emp
mp)
se
se T
0.5
(Ca
e Te
10mA 3A
(Ca
˚C
(Cas
125
1 1
25˚C
2A
5mA
–30˚C
I C =1 A
0 0 0
0 1 2 3 4 5 6 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
500 500 5
DC Curr ent Gain h FE
125˚C
Typ
25˚ C
100 100
– 3 0 ˚C
50 50 1
20 20 0.5
0.01 0.1 0.5 1 4 0.01 0.05 0.1 0.5 1 4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10 s
0m
Cu t-off Fr eque ncy f T ( MH Z )
30 s
Collector Cu rre nt I C (A)
DC 20
ith
In
fin
1
ite
20 Typ
he
at
0.5
si
nk
10
10 Without Heatsink
Natural Cooling
0.1
Without Heatsink
0 0.05 0
–0.005 –0.1 –0.5 –1 –4 3 5 10 50 80 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
76
High hFE
LOW VCE (sat) 2SC3852/3852A
Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 80 100 V 10max µA
ICBO
8.4±0.2
VCEO 60 80 V VCB= 80 100 V
16.9±0.3
VEBO 6 V IEBO VEB=6V 100max µA ø3.3±0.2
a
IC 3 V(BR)CEO IC=25mA 60min 80min
0.8±0.2
A V b
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V
13.0min
1.35±0.15
Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) B C E a. Type No.
20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ b. Lot No.
3 1.0 3
A
2 m
=1 8mA
IB
2 1.0 2
3mA
p)
mp)
em
)
Temp
2mA
eT
e Te
Cas
(Case
(Cas
1 0.5 1
˚C (
1mA
25˚C
125
3A
–30˚C
2A
0.5mA
I C =1A
0 0 0
0 1 2 3 4 5 6 0.001 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
2000 2000 5
125˚C
Transient Thermal Resistance
DC Cur rent Gain h FE
1000 1000
Typ 25 ˚C
500 500
– 3 0 ˚C
V CB =10V
I E =–2A
100 100 0.5
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
5 10
s
10 m
s
Cut-o ff F reque ncy f T (MH Z )
0m
s
Collect or Curr ent I C (A)
20 DC 20
ith
In
Typ
fin
1
ite
he
at
0.5
si
nk
10 10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
0 0.05 0
–0.005 –0.01 –0.05 –0.1 –0.5 –1 –2 3 5 10 50 100 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
77
2SC3856
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3856 Unit Symbol Conditions 2SC3856 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 200 V ICBO VCB=200V 100max 9.6 2.0±0.1
19.9±0.3
VEBO 6 V IC=50mA 180min
4.0
a
IC 15 A hFE VCE=4V, IC=3A 50min∗ ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 130(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
A m A
1A
0m 5 00
70 300m
A
20 0m A
10 2 10
100 mA
mp)
Temp)
mp)
e Te
e Te
5 50mA 1 5
Cas
(Case
(Cas
˚C (
25˚C
–30˚C
125
I B =20mA I C =10A
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 200 3
125˚C
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E
100 1
Typ 25˚C
100
0.5
50 –30˚C
50
20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
0m
s
10 100
Cu t-of f Fr equen cy f T (MH Z )
D
C
ith
Collect or Cur ren t I C (A)
20
In
5
fin
ite
he
at
si
nk
1 50
10
0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –10 3 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
78
2SC3857
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC3857 Unit Symbol Conditions 2SC3857 Unit
36.4±0.3 6.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA
24.4±0.2 2.1
VCEO 200 V IEBO VEB=6V 100max µA 2-ø3.2±0.1 9
7
21.4±0.3
IC 15 A hFE VCE=4V, IC=5A 50min∗ a
IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V b
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1
A
5A
1A 00
m
400m
A
1.
20 0m A
10 2 10
10 0m A
p)
)
Tem
Temp
5 I B =50mA 1 5
se
(Case
(Ca
I C =15A ˚C
–30˚C
125
10A 25˚C
5A
0 0 0
0 1 2 3 4 0 1 2 3 4 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 300 2
DC Curr ent Gain h FE
125˚C 1
Typ
100 100 25˚C 0.5
–30˚C
50 50
20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
D
C
Cut-o ff Fr equ ency f T (M H Z )
30 10 120
10
W
Collector Cu rre nt I C (A)
0m
ith
Typ
s
In
5
fin
ite
he
20 80
at
si
nk
Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
79
2SC3858
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit
36.4±0.3 6.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA 24.4±0.2 2.1
VCEO 200 V IEBO VEB=6V 100max µA 2-ø3.2±0.1 9
7
21.4±0.3
IC 17 A hFE VCE=4V, IC=8A 50min∗ a
V b
IB 5 A VCE(sat) IC=10A, IB=1A 2.5max
PC 200(Tc=25°C) W fT VCE=12V, IE=–1A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 3
0.65 +0.2
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
-0.1
Tstg 1.05 +0.2
–55 to +150 °C -0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ b. Lot No.
A
1A m m A
5A
7 00 500
1.
15 15
A
300m
20 0m A 2
10 10
100mA
p)
)
Tem
Temp
1
se
5 50mA 5
(Case
(Ca
˚C
I C =15A
125
–30˚C
25˚C
I B =20mA 10A
5A
0 0 0
0 1 2 3 4 0 1 2 3 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 200 2
125˚C
DC Curr ent Gain h FE
100 1
100 Typ 25˚C
50 –30˚C 0.5
50
20 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
D 160
10
C
0m
Cut-o ff Fr equ ency f T (M H Z )
10
W
s
ith
Collector Cu rre nt I C (A)
20
In
5
fin
120
ite
he
at
si
nk
1 80
10
0.5 Without Heatsink
Natural Cooling 40
Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
80
2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit 4.2±0.2
10.1±0.2
4.0±0.2
VCBO 500 ICBO VCB=500V 100max µA 2.8 c0.5
V
VCEO 400 V IEBO VEB=10V 100max µA
8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 a
0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
200 66 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
7 7
A
600m
mA
6 6
I B=
V B E (sat)
40 0m A
1
300 mA e Temp)
–55˚C (Cas
4 mp) 4
e Te
200 mA 25˚C (Cas
p)
Tem
)
mp)
emp
)
Temp
(Case
125˚C
p)
e Te
se
se T
2 5 Tem
(Ca
100mA
(Cas
(Ca
2 2
˚C
e
˚C
as
125
25˚C
–55˚C
(C
5 ˚C
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
70 7 5
t o n• t s t g • t f (µ s)
5
50
DC Cur rent Gain h FE
t s tg
V C C 200V
Typ I C :I B1 :I B 2 =10:1:–2
1
Switching T im e
1
0.5
t on
0.5
10 tf
7 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30
10 10 10
M aximu m Power D issi pation P C (W)
0µ
s
5 5
W
ith
Co lle ctor Cu rre nt I C (A)
20
In
fin
ite
he
at
si
1 1
nk
Without Heatsink
Without Heatsink 10
Natural Cooling
0.5 Natural Cooling 0.5
L=3mH
–IB2=1A
Duty:less than 1%
Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
81
2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3927 Unit Symbol Conditions 2SC3927 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
VCB=800V 100max
1.8
VCBO 900 V ICBO 9.6 2.0±0.1
19.9±0.3
4.0
10 to 28 a
IC 10(Pulse15) A hFE VCE=4V, IC=5A ø3.2±0.1
b
IB 5 A VCE(sat) IC=5A, IB=1A 0.5max V
PC 120(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
250 50 5 10 –5 0.75 –1.5 1max 5max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
10 10
2A 1A
1.
Base-Emitter Saturation Voltage V B E(s a t) (V )
80 0m A V B E (sat)
1
8 8
p)
6 400m A ase Tem 6
25˚C (C
emp)
p)
)
T
Temp
(Case
Temp)
em
200mA 125˚C
eT
)
4 4
mp
(Case
Cas
(Case
Te
˚C (
se
I B =100mA
a
25˚C
(C
125
–55˚C
˚C
2 C 2
5˚
25
12
5 ˚C
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
125˚ C
t o n • t s t g• t f ( µ s)
5 t s tg
DC C urrent G ain h FE
25 ˚C V C C 250V
Transient Thermal Resistance
1
I C :I B 1 :–I B2 =10:1.5:3
–5 5˚ C
0.5
Switching Ti me
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 120
10 10
DC 10 1m 10
ms 0µ
M aximu m Power Dissipat io n P C (W)
s s 100
5 5
W
ith
Co lle ctor Cu rre nt I C (A)
In
fin
ite
1 1
he
at
0.5 0.5
si
nk
50
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.02 0.02 0
10 50 100 500 600 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
82
2SC4020
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC4020 Unit Symbol Conditions 2SC4020 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 900 V ICBO VCB=800V 100max µA 2.0±0.1
16.0±0.7
VEBO 7 V V(BR)CEO IC=10mA 800min V
8.8±0.2
a ø3.75±0.2
IC 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30
b
IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V 1.35
4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 40typ pF 0.65 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
A (I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
m 3
3 5 00 2
40 0m A
Base-Emitter Saturation Voltage V B E (s a t) (V )
300m A
200 mA
2 2
140mA
mp)
mp)
p)
1
100mA
ase Tem
e Te
ase Te
V B E (sat)
(Cas
1 60mA 1
25˚C (C
–30˚C (C
125˚C
I B =20mA
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 6 5
5
t o n• t s t g• t f (µ s)
125˚C
t s tg
DC C urrent G ain h FE
25˚C
VCC 250V
–30˚C IC:IB1:– IB2=2:0.3:1 Const.
Switching Ti me
10 1
1
tf
5 0.5
0.5
t on
2 0.2 0.3
0.02 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 50
5 5
Ma xim um Powe r Dissipat io n P C (W)
40
10
0µ
W
s
ith
Collecto r Cur rent I C (A)
In
fin
30
ite
he
1 1
at
si
nk
Without Heatsink 20
0.5 0.5 Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1.0A
Duty:less than 1% 10
Without Heatsink
0.1 2
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
83
High hFE
LOW VCE (sat) 2SC4024
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4024 Unit Symbol Conditions 2SC4024 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 100 V ICBO VCB=100V 10max µA
VCEO 50 V IEBO VEB=15V 10max µA
8.4±0.2
16.9±0.3
VEBO 15 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
hFE VCE=4V, IC=1A 300 to 1600 a
IC 10 A
0.8±0.2
b
IB 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V
PC fT VCE=12V, IE=–0.5A 24typ MHz
±0.2
3.9
35(Tc=25°C) W
13.0min
Tj 150 °C COB VCB=10V, f=1MHz 150typ pF 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
20 4 5 0.1 –0.1 0.5typ 2.0typ 0.5typ b. Lot No.
10 1.5 10
I B =35m A
8 30mA 8
1.0
20m A
6 6
15mA
)
mp
)
emp
mp)
10mA
Te
4 4
se T
e Te
se
0.5
(Ca
(Ca
10A
(Cas
5mA
˚C
25˚C
125
–30˚C
2 5A 2
3A
I C= 1 A
0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
1000 1000 4
1 2 5 ˚C
DC Curr ent Gain h FE
Typ
500 500
25˚C
˚C
–30 1
0.5
10
m in mm
10 10 s
Cut -off Fre quency f T ( MH Z )
30
0m
Collector Cu rre nt I C (A)
20 s
5
DC
W
ith
In
20
fin
ite
he
at
150x150x2
si
10 1
nk
100x100x2
10
Without Heatsink
0.5 Natural Cooling 50x50x2
Without Heatsink
2
0 0.2 0
–0.05 –0.1 –0.5 –1 –5 –10 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
84
LOW VCE (sat) 2SC4064
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application : DC Motor Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 50 V ICBO VCB=50V 100max µA
VCEO 50 V IEBO VEB=6V 10max µA
8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
IC 12 A hFE VCE=1V, IC=6A 50min a
0.8±0.2
b
IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V
PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz
±0.2
3.9
13.0min
Tj 150 °C COB VCB=12V, f=1MHz 180typ pF 1.35±0.15
Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
24 4 6 10 –5 0.12 –0.12 0.6typ 1.4typ 0.4typ b. Lot No.
12 1.3 12
100m A
A
m
20
10 10
8 8
40mA
6 6
p)
mp)
)
Tem
Temp
20mA
e Te
0.5
se
4 4
(Case
(Cas
(Ca
10mA 12A
˚C
25˚C
–30˚C
125
9A
2 I B =5mA 6A 2
3A
I C= 1 A
0 0 0
0 0.8 1.6 2.4 3.2 4 4.8 5.6 6 0.002 0.01 0.1 1 3 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =1V) (V C E =1V)
1000 1000 5
125˚C
500 500
DC Cur rent Gain h FE
Typ 25˚C
–3 0˚C
100 100 1
50 50
0.5
20 20 0.3
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Typ
10
10
10 in mm
m
0m
s
Cut- off F requ ency f T (M H Z )
30
5 DC s
Collecto r Curr ent I C (A)
20
W
ith
In
20
fin
1
ite
he
at
0.5 150x150x2
si
10
nk
100x100x2
10
Without Heatsink
Natural Cooling 50x50x2
0.1
Without Heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
85
Equivalent C
circuit
( 400 Ω )
E
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Application : DC Motor Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4065 Unit Symbol Conditions 2SC4065 Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 60 V ICBO VCB=60V 100max µA
VCEO 60 IEBO VEB=6V 60max mA
8.4±0.2
V
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 60min V ø3.3±0.2
a
IC ±12 A hFE VCE=1V, IC=6A 50min
0.8±0.2
b
IB 3 A VCE(sat) IC=6A, IB=1.3A 0.35max V
±0.2
3.9
PC 35(Tc=25°C) W VFEC VECO=10A 2.5max V
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 24typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 180typ PF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
24 4 6 10 –5 0.12 –0.12 0.6typ 1.4typ 0.4typ b. Lot No.
12 1.3 12
A
A
0m
0m
15 100m A
20
10 10
60mA
8 8
40mA
6 6
p)
mp)
p)
Tem
e Tem
e Te
0.5
20mA
se
4 4
(Cas
(Ca
(Cas
12A
˚C
25˚C
–30˚C
125
I B =10mA 9A
2 6A 2
3A
I C =1 A
0 0 0
0 2 4 6 0.005 0.01 0.1 1 3 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =1V) (V C E =1V)
400 400 5
Typ
5˚C
12
DC Cur rent Gain h F E
100 100 ˚C
25
0 ˚C
50 50 –3
1
0.5
10 10
5 5
3 3 0.2
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Typ
10
10
10 in mm
m
0m
s
Cut-o ff F requ ency f T (MH Z )
30
5 DC s
Collector Curre nt I C (A)
20
W
ith
20
In
fin
1
ite
he
0.5 150x150x2
at
10
si
nk
100x100x2
10
Without Heatsink
Natural Cooling 50x50x2
0.1
Without Heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
86
2SC4073
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA
8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 5(Pulse10) hFE VCE=4V, IC=2A 10 to 30 a
A
0.8±0.2
b
IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 10typ MHz 1.35±0.15
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
200 100 2 10 –5 0.2 –0.4 1max 3max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
5 5
Collector-Emitter Saturation Voltage V CE(s a t) (V )
60 0m A
A
m
2
Base-Emitter Saturation Voltage V B E (s a t) (V )
00
=8
400 mA
IB
4 4
300m A
3 3
200mA
V B E (sat)
1
mp)
–55˚C (Case Temp)
)
p)
emp
2 100mA 2
Tem
)
e Te
emp
p)
25˚C (Case Tem
se T
se
e Temp)
(Cas
eT
as
˚C
(C
(Ca
(Ca
50mA 12 5˚C
as
25
˚C
–55˚C
1
(C
25˚C
C
125
5˚
12 5˚
C
V C E (sat) –5
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 5 5
125˚C
t o n• t s tg • t f (µ s)
25˚C t s tg
DC Curr ent Gain h FE
V C C 200V
I C :I B1 :–I B 2 =10:1:2
–55˚C
1
Swi tchi ng T im e
0.5 1
10 t on
tf 0.5
5 0.1 0.3
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30
10 10 10
0µ
Maximu m Power Di ssip ation P C (W)
5 1m s
s 5
10
W
m
ith
s
Collector Curren t I C (A)
20
In
fin
1
D
ite
C
1
he
0.5
at
0.5
si
nk
10
0.1 Without Heatsink
Without Heatsink 0.1 Natural Cooling
0.05
Natural Cooling L=3mH
0.05 IB2=–0.5A
Duty:less than1% Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
87
2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4130 Unit Symbol Conditions 2SC4130 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA
8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 7(Pulse14) hFE VCE=4V, IC=3A 10 to 30 a
A
0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 30(Tc=25°C) VBE(sat) IC=3A, IB=0.6A 1.3max V
±0.2
3.9
W
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 15typ MHz 1.35±0.15
50typ 1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
200 67 3 10 –5 0.3 –0.6 1max 2.2max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
7 7
Collector-Emitter Saturation Voltage V CE(s a t) (V )
10 00 m A
A
0m
6 6
60 0m A 2
=1
IB
400mA
4 4
200 mA
mp)
V B E (sat)
)
mp
p)
1
Tem
e Te
Te
–55˚C (Case Temp)
100m A
se
p)
25˚C (Case Tem
ase
(Cas
(Ca
2 2
C (C
e Temp)
125˚C (Cas
5˚C
p)
–55˚C
˚C
50mA
em
25˚
25
12
T
e
as C
125˚C
(C 5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 5 4
125˚C
t o n • t s t g• t f ( µ s)
25˚C
D C Cur r ent Gai n h F E
–55˚C V C C 200V t s tg
I C :I B 1 :–I B2 =10:1:2
1
Switching Ti me
10 1
0.5
5
t on
0.5
tf
2 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30
10 10 10
0µ
1m s
M aximum Power Dissipa ti on P C (W)
5 10 s 5
m
s
W
DC
ith
Collect or Curr ent I C (A)
20
In
fin
1 1
ite
he
0.5 0.5
at
si
nk
Without Heatsink 10
0.1 0.1 Natural Cooling
Without Heatsink L=3mH
0.05 0.05
Natural Cooling IB2=–0.5A
Duty:less than 1%
Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 2 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
88
LOW VCE (sat) 2SC4131
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 100 V ICBO VCB=100V 10max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO 50 V IEBO VEB=15V 10max
VEBO 15 V V(BR)CEO IC=25mA 50min V
23.0±0.3
ø3.3±0.2
IC 15(Pulse25) A hFE VCE=1V, IC=5A 60 to 360 a
1.6
IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V b
A
3.0
PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF +0.2
1.05 -0.1
15 1.3 15
85mA
80mA
12
40mA 10
8
25mA
mp)
)
)
0.5
mp
emp
15mA
15A 5
e Te
Te
se T
se
4
(Cas
10A
(Ca
(Ca
I B =7mA
˚C
–30˚C
25˚C
5A 125
3A
I C =1 A
0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =1V) (V C E =1V)
1000 1000 3
12 5˚ C
DC Cur rent Gain h FE
– 3 0 ˚C 1
0.5
100 100
70 70 0.3
0.02 0.1 1 10 15 0.02 0.1 1 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
=80mA s
t o n • t s t g • t f ( µ s)
10
10
m
0m
Collect or Curr ent I C (A)
10
s
s 40
DC
W
1
ith
5
In
tf
Switching Time
fin
ite
0.5
he
at
si
20
nk
1
t on Without Heatsink
Natural Cooling Without Heatsink
0.1 3.5
0.08 0.4 0
0.1 0.5 1 5 10 3 5 10 50 100 0 50 100 150
Collector Current I C (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
89
2SC4138
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 500 V ICBO VCB=500V 100max 9.6 2.0±0.1
19.9±0.3
4.0
a ø3.2±0.1
IC 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30
b
IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 33.3 6 10 –5 0.6 –1.2 1max 3max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
10 1.4 10
A 1A
1.2
Base-Emitter Saturation Voltage V B E (s a t) (V )
8 600 mA 8
400mA
6 6
V B E (sat)
)
mp
)
emp
mp)
Te
4 200m A 4
se T
e Te
se
(Ca
(Ca
(Cas
˚C
I B =100m A
25˚C
125
–55˚C
2 2
V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
100 10 3
t o n• t s t g• t f (µ s)
5 t s tg
Transient Thermal Resistance
125˚C
DC C urrent G ain h FE
50
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–55˚C
1
Switching Ti me
0.5 t on
10 0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
10
1m 0µ
s s
Ma xim um Powe r Dissipat io n P C (W)
10 10
60
W
ith
Collect or Curr ent I C (A)
5 5
In
fin
ite
he
40
at
si
nk
1 1
Without Heatsink
Natural Cooling
0.5 0.5
Without Heatsink L=3mH
20
Natural Cooling –IB2=1A
Duty:less than 1%
Without Heatsink
3.5
0.1 0.1
5 10 50 100 500 0
5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
90
2SC4139
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4139 Unit Symbol Conditions 2SC4139 Unit 4.8±0.2
15.6±0.4
5.0±0.2
2.0
1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1
19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
4.0
a ø3.2±0.1
IC 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30
b
IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max V
PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 25 8 10 –5 0.8 –1.6 1max 3max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
15 1.5 10
5A 1 .2 A
1.
Base-Emitter Saturation Voltage V B E (s at) (V )
800 mA 8
600mA V B E (sat)
10 1.0
e Temp) 6
–55˚C (Cas
400m A
Temp)
mp)
ase
25˚C (C
)
Temp
Temp)
e Te
)
Temp 4
(Case
p)
Cas
125˚C
(Case
200mA 0.5
em
(Case
5
˚C
˚C (
eT
25
25˚C
125
as
–55˚C
I B =100mA 2
C
(
C
5˚ ˚C
12 5
–5
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 20 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 8 2
t o n• t s t g• t f (µ s)
125˚C 5
t s tg
DC C urrent G ain h FE
25˚C V C C 200V 1
I C :I B 1 :I B2 =10:1:–2
–55˚C
1 0.5
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 120
10
100
0µ
s
W
ith
Collect or Cur ren t I C (A)
In
fin
10 10
ite
he
at
si
nk
5 5 Without Heatsink 50
Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1A
Duty:less than 1%
91
2SC4140
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4140 Unit Symbol Conditions 2SC4140 Unit
15.6±0.4 4.8±0.2
5.0±0.2
2.0
µA
1.8
VCBO 500 V ICBO VCB=500V 100max 9.6 2.0±0.1
19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
4.0
a ø3.2±0.1
IC 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30
b
IB 6 A VCE(sat) IC=10A, IB=2A 0.5max V
PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2.0A 10typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 20 10 10 –5 1 –2 1max 3max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
18 1.4 18
1 .6 A
Base-Emitter Saturation Voltage V B E (s at) (V)
16 1.2 A 16
V B E (sat)
800 mA 1
12 12
Temp)
600mA –55˚C (Case
e Temp)
25˚C (Cas
)
400m A
mp
mp)
mp)
8 8
Te
)
Temp
e Te
e Te
(Case
p)
se
125˚C
em
(Ca
(Cas
(Cas
eT
˚C
200mA
˚C
25
as
25˚C
125
4
–55˚C
4
(C
C
I B =100mA 5˚
12 ˚C
V C E (sat) –55
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 18 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
t o n• t s t g• t f (µ s)
125˚C 5
t s tg
DC C urrent G ain h FE
V C C 200V 1
25˚C I C :I B 1 :–I B2 =10:1:2
0.5
Sw it ching Time
–55˚C 1
0.5 t on
10
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 18 0.2 0.5 1 5 10 18 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 130
10
10 1m 0µ
ms s s
Ma xim um Powe r Dissipat io n P C (W)
DC
10 10
100
W
ith
Collector Cur rent I C (A)
5 5
In
fin
ite
he
at
1 1
si
nk
0.5 0.5 50
Without Heatsink
Without Heatsink Natural Cooling
Natural Cooling L=3mH
IB2=–0.5A
0.1 0.1 Duty:less than 1%
92
2SC4153
Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4153 Unit Symbol Conditions 2SC4153 Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 200 V ICBO VCB=200V 100max µA
IEBO VEB=8V 100max µA
8.4±0.2
VCEO 120 V
16.9±0.3
VEBO 8 V V(BR)CEO IC=50mA 120min V ø3.3±0.2
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220
0.8±0.2
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V
±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V
13.0min
Tj fT VCE=12V, IE=–0.5A 30typ 1.35±0.15
150 °C MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
50 16.7 3 10 –5 0.3 –0.6 0.5max 3max 0.5max b. Lot No.
7 3 7
mA
200
mA
5 150 6
mA
100
5 5
A
60m 2
4 40mA 4
p)
mp)
Tem
)
Temp
20m A
e Te
3 3
se
(Cas
(Ca
(Case
1
˚C
2 2
25˚C
125
I B =10mA
–30˚C
1 1
3A 5A
I C = 1A
0 0 0
0 1 2 3 4 0.005 0.01 0.1 1 2 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 300 5
12 5˚ C
DC Curr ent Gain h FE
Typ
Transient Thermal Resistance
25˚C
100 100
˚C
–30 1
50 50
0.5
20 20 0.2
0.01 0.1 0.5 1 5 7 0.01 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Heatsink: Aluminum
30 5 in mm
Cut- off F req uency f T (M H Z )
10
Collector Cur rent I C (A)
ms
20
W
ith
In
fin
20 1 150x150x2
ite
he
100x100x2
at
0.5
si
10
nk
Without Heatsink
Natural Cooling 50x50x2
10
93
2SC4296
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4296 Unit Symbol Conditions 2SC4296 Unit
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
VCEO 400 V IEBO VEB=10V 100max
VEBO 10 V(BR)CEO IC=25mA 400min V
23.0±0.3
V
ø3.3±0.2
IC 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 a
1.6
IB 4 VCE(sat) IC=6A, IB=1.2A 0.5max b
A V
3.0
PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V
3.3
Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
10 1.4 10
A 1A
1.2
Base-Emitter Saturation Voltage V B E (s at) (V )
8 600 mA 8
400mA
6 6
V B E (sat)
)
mp
)
emp
mp)
Te
4 200m A 4
se T
e Te
se
(Ca
(Ca
(Cas
˚C
I B = 100mA
25˚C
125
–55˚C
2 2
V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
100 10 3
t o n• t s t g• t f (µ s)
5 t s tg
125˚C
Transient Thermal Resistance
DC C urrent G ain h FE
50
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–55˚C
1
Sw it ching Time
0.5 t on
10 0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
50
µs
1m 10
10 s 0µ
s 10
Ma xim um Powe r Dissipat io n P C (W)
10
m
s
5 5 60
W
Collect or Cur ren t I C (A)
ith
In
fin
ite
1 1
he
40
at
si
0.5 0.5
nk
Without Heatsink
Natural Cooling
Without Heatsink L=3mH 20
0.1 Natural Cooling 0.1 –IB2=1A
Duty:less than 1%
0.05 0.05
Without Heatsink
3.5
0.02 0.02
5 10 50 100 500 0
5 10 50 100 500 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
94
2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 500 V ICBO VCB=500V 100max µA 3.45 ±0.2
µA
5.5
VCEO V 100max
9.5±0.2
400 IEBO VEB=10V
VEBO 10 V V(BR)CEO IC=25mA 400min V
23.0±0.3
ø3.3±0.2
IC 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 a
1.6
IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max V b
3.0
PC 75(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V
3.3
Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
12 12
1A
Base-Emitter Saturation Voltage V B E (s at) (V)
80 0m A
10 10
V B E (sat)
1
8 8
Temp)
–55˚C (Case
400m A
e Temp)
6 25˚C (Cas 6
p)
mp)
Tem
mp)
)
Te
Temp
(Case
e Te
)
2 5 Temp
se
200mA 125˚C
(Ca
4 4
(Cas
(Case
˚C
e
˚C
as
25˚C
125
I B =100mA
(C
–55˚C
2 5˚ 2
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 8 2
t on• t s t g • t f (µ s)
125˚C 5
t s tg
DC Cur rent Gain h F E
1
25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–30˚C 0.5
1
Swi tchi ng T im e
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
10
0µ
s
M aximum Power Dissipa ti on P C (W)
10 10
60
W
Co lle ctor Cu rre nt I C ( A)
ith
5 5
In
fin
ite
he
40
at
si
nk
1 1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5 L=3mH 20
Natural Cooling –IB2=1A
Duty:less than 1%
Without Heatsink
3.5
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
95
2SC4298
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4298 Unit Symbol Conditions 2SC4298 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 500 V ICBO VCB=500V 100max µA 3.45 ±0.2
µA
5.5
100max
9.5±0.2
VCEO 400 V IEBO VEB=10V
VEBO 10 V V(BR)CEO IC=25mA 400min V
23.0±0.3
ø3.3±0.2
IC 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 a
1.6
IB 5 VCE(sat) IC=8A, IB=1.6A 0.5max V b
A
3.0
PC 80(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V
3.3
Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
15 1.5 10
Collector-Emitter Saturation Voltage V C E (s a t) (V )
5A 1. 2A
1.
Base-Emitter Saturation Voltage V B E (s at) (V)
800 mA 8
600m A V B E (sat)
10 1.0
e Temp) 6
–55˚C (Cas
400mA
Temp)
mp)
ase
25˚C (C
)
Temp
Temp)
e Te
)
Temp 4
(Case
p)
Cas
125˚C
(Case
200mA 0.5
em
(Case
5
˚C
˚C (
eT
25
25˚C
125
as
–55˚C
I B =100mA 2
C
(
C
5˚ ˚C
12 5
–5
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 20 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 8 2
t o n• t s t g• t f (µ s)
125˚C 5
t s tg
Transient Thermal Resistance
DC C urrent G ain h FE
25˚C V C C 200V 1
I C :I B1 :I B 2 =10:1:–2
–55˚C
1 0.5
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 80
10
60
W
ith
Collector Cur rent I C (A)
In
fin
10 10
ite
he
40
at
si
nk
5 5 Without Heatsink
Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1A
Duty:less than 1% 20
Without Heatsink
3.5
1 1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
96
2SC4299
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4299 Unit Symbol Conditions 2SC4299 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2
µA
5.5
VCEO 800 IEBO VEB=7V 100max
9.5±0.2
V
VEBO 7 V V(BR)CEO IC=10mA 800min V
23.0±0.3
ø3.3±0.2
IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 a
1.6
IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V b
3.0
PC 70(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF +0.2
1.05 -0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
500mA 400mA (I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
3 3
Base-Emitter Saturation Voltage V B E (s at) (V)
300mA
1 V B E (sat)
200mA
2 2
e Temp)
25˚C (Cas
mp)
mp)
100mA Temp)
p)
e Te
(Case
ase Tem
ase Te
125˚C
(Cas
e m p)
25˚C (C
1 I B =50mA 1
125˚C
–55˚C (C
eT
2 5 Cas
(
˚C
˚C
–55
V C E (sat) 5˚C
12
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 8 3
t o n• t s t g• t f (µ s)
125˚C
5
t s tg
DC C urrent G ain h FE
–55˚C
1
tf
10
0.5 0.5
t on
5 0.2 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 70
5 5 60
Ma xim um Powe r Dissipat io n P C (W)
10
0µ
s
W
50
ith
Collector Cur rent I C (A)
In
fin
ite
40
he
1 1
at
si
nk
30
Without Heatsink
0.5 0.5 Natural Cooling
Without Heatsink L=3mH 20
Natural Cooling IB2=–1.0A
Duty:less than 1%
10
Without Heatsink
0.1 3.5
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
97
2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4300 Unit Symbol Conditions 2SC4300 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2
µA
5.5
VCEO 800 IEBO VEB=7V 100max
9.5±0.2
V
VEBO 7 V V(BR)CEO IC=10mA 800min V
23.0±0.3
ø3.3±0.2
IC 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 a
1.6
IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max V b
3.0
PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
700mA (I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
5 5
60 0m A
Base-Emitter Saturation Voltage V B E (s at) (V)
500m A
4 400 mA 4
300mA
3 3
mp)
200mA
)
Temp
p)
e Te
ase Tem
V B E (sat)
(Cas
(Case
2 1 2
I B =100mA –55˚C (Case Temp)
125˚C
–55˚C (C
25˚C (Case Temp)
25˚C
e Temp)
125˚C (Cas
m p)
C
1 1
– 5 5 ˚C
25˚
Te
e
C as
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
t on• t s t g • t f (µ s)
5 t s tg
125˚C
DC Cur rent Gain h F E
VCC 250V
1
25˚C IC:IB1:–IB2
=2:0.3:1 Const.
0.5
Swi tchi ng T im e
–55˚C
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80
10 10
10
10
5 0µ 5
µs
1m s
s 60
W
Collector Curre nt I C ( A)
ith
In
1
fin
1
ite
he
0.5 40
0.5
at
si
nk
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH 20
0.05
0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.01 0.01 0
10 50 100 500 1000 50 100 500 1000 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
98
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4301 Unit Symbol Conditions 2SC4301 Unit
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
VCEO 800 V IEBO VEB=7V 100max
VEBO V(BR)CEO IC=10mA 800min
23.0±0.3
7 V V
ø3.3±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 a
1.6
IB VCE(sat) IC=3A, IB=0.6A 0.5max b
3.5 A V
3.0
PC 80(Tc=25°C) VBE(sat) IC=3A, IB=0.6A 1.2max V
3.3
W
Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
1A (I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
7
700m A
Base-Emitter Saturation Voltage V B E (s at) (V)
6 V B E (sat) 6
1
500mA
–55˚C
p)
300 mA ase Tem
4 25˚C (C 4
mp)
)
Temp
p)
)
e Te
emp
200mA ase T
ase Tem
(C
125˚C
(Cas
(Case
)
emp
I B =100mA
125˚C
–55˚C (C
eT
25˚C
2 2
as
(C
˚C
˚C
25
5
12
V C E (sat) 5˚C
–5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
12
t on • t s t g• t f ( µ s)
5˚
25˚C C 5 t s tg
DC C urrent G ain h FE
VCC 250V 1
I C :I B1 :I B2 =2:0.3:–1 Const.
–55˚C
0.5
Sw it ching Time
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80
10 10
Ma xim um Powe r Dissipation P C (W)
10
0µ
s
5 60
W
5
ith
Co lle ctor Cu rren t I C (A)
In
fin
ite
he
40
at
si
1 1
nk
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling IB2=–1.0A 20
Duty :less than1%
Without Heatsink
3.5
0.1 0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
99
2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4304 Unit Symbol Conditions 2SC4304 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 900 V ICBO VCB=800V 100max µA
VCEO 800 V IEBO VEB=7V 100max µA
8.4±0.2
16.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 800min V
ø3.3±0.2
IC hFE 10 to 30 a
3(Pulse6) A VCE=4V, IC=0.7A
0.8±0.2
b
IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max V
PC 35(Tc=25°C) VBE(sat) IC=0.7A, IB=0.14A 1.2max V
±0.2
3.9
W
13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
250 357 0.7 10 –5 0.1 –0.35 0.7max 4.0max 0.7max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
3 3
700mA
Base-Emitter Saturation Voltage V B E (s at) (V )
500 mA
V C E (sat)
2
–55˚C (Case Temp)
mp)
mp)
p)
e Tem
e Te
e Te
100mA 1 V B E (sat)
p)
–55˚C (Case Tem
(Cas
Cas
(Cas
1 p) 1
25˚C (Case Tem
˚C (
I B =50mA
25˚C
–55˚C
Temp)
125
125˚C (Case
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 7 4
125˚C
t o n• t s t g• t f (µ s)
5
25˚C
DC C urrent G ain h FE
t s tg
Transient Thermal Resistance
V C C 250V
I C :I B1 :–I B 2 =10:1.5:5
–55˚C
1
Sw it ching Time
10 1
tf
0.5
5
t on 0.5
2 0.1 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 35
5 5
50
30
Ma xim um Powe r Dissipat io n P C (W)
µs
10
0µ
W
ith
1
s
Collector Curr ent I C (A)
1
1m
DC
In
s
fin
( Tc
0.5 0.5
ite
10
=2
20
ms
he
5
at
C
)
si
nk
0.1 0.1
100
2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4381 2SC4382 Unit Symbol Conditions 2SC4381 2SC4382 Unit
10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 150 200 V 10max µA
ICBO
VCEO 150 200 V VCB= 150 200
8.4±0.2
V
16.9±0.3
VEBO 6 V IEBO VEB=6V 10max µA ø3.3±0.2
a
IC 2 A V(BR)CEO IC=25mA 150min 200min V
0.8±0.2
b
IB 1 A hFE VCE=10V, IC=0.7A 60min
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A 1.0max V
13.0min
Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
20 20 1 10 –5 100 –100 1.0typ 3.0typ 1.5typ b. Lot No.
2 3 2
A
m
50
1.6
2
1.2
)
Temp
e Temp)
e Temp)
I B =5mA/Step
0.8
(Case
1
25˚C (Cas
–55˚C (Cas
125˚C
0.4
I C = 0 .5 2A
A 1A
0 0 0
0 2 4 6 8 10 2 10 100 1000 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =10V) (V C E =10V)
400 400 6
DC Cur rent Gain h F E
125 ˚C
Typ
2 5 ˚C
100 100 – 3 0 ˚C
1
50 50
30 30 0.5
0.01 0.1 1 2 0.01 0.1 1 2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
D
s
ms
C
Cut-o ff F requ ency f T (MH Z )
1
Collecto r Curr ent I C (A)
20 20
ith
Typ
In
fin
ite
he
at
si
nk
0.1
10 10
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
Without Heatsink
1 2
0 0.01 0
–0.01 –0.1 –0.5 –1 –2 1 10 100 300 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
101
2SC4388
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4388 Unit Symbol Conditions 2SC4388 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 200 V ICBO VCB=200V 10max µA 3.45 ±0.2
µA
5.5
VCEO IEBO VEB=6V 10max
9.5±0.2
180 V
VEBO 6 V V(BR)CEO IC=50mA 180min V
23.0±0.3
IC 15 A hFE VCE=4V, IC=3A 50min∗ a
ø3.3±0.2
1.6
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V b
3.0
PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
3.3
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
A mA
1A
m 0
00 50
7 A
300m
20 0m A
10 2 10
100 mA
mp)
Temp)
mp)
e Te
e Te
5 50mA 1 5
Cas
(Case
(Cas
˚C (
25˚C
–30˚C
125
I B =20mA I C =10A
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 200 3
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
100 1
100 Typ 25˚C
0.5
50 –30˚C
50
20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
s
10 80
Cut- off F req uency f T (M H Z )
DC
Collect or Cur ren t I C (A)
5
20
ith
In
60
fin
ite
he
at
1
si
nk
40
10 0.5
Without Heatsink
Natural Cooling 20
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
102
2SC4418
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4418 Unit Symbol Conditions 2SC4418 Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA
8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
a
IC 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30
0.8±0.2
b
IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max V
PC VBE(sat) IC=1.5A, IB=0.3A 1.3max
±0.2
3.9
30(Tc=25°C) W V
13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
200 133 1.5 10 –5 0.15 –0.3 1max 2.5max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
5 5
A 1.4 A
1.8
Base-Emitter Saturation Voltage V B E (s at) (V )
V C E (sat)
1A
2 –55˚C (Case Temp)
4 4
25˚C (Case Temp)
400 mA
3 3
200 mA
V B E (sat)
Tem p)
1 2
em
2
e Te )
mp)
–55˚C (Case Temp)
p
100 mA
eT
Temp)
25˚C (Case
as
se
(C
p)
ase Tem
Cas
I B =50mA
Ca
12 5˚ C (C
5˚C
1 1
C(
˚C (
12
25˚
–55
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 1.0 1.6
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
100 8 5
t o n• t s t g• t f (µ s)
5
50 Typ
DC C urrent G ain h FE
V C C 200V t s tg
I C :I B1 :I B2 =10:1:–2
1
Sw it ching Time
10
0.5 1
5 tf
t on 0.5
2 0.1 0.4
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 3 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30
10 50 10
10 µs
0µ
M aximum Power Dissipa ti on P C ( W)
1m s
5 s 5
10
DC m
W
s
ith
Collector Cur rent I C (A)
20
In
fin
1 1
ite
he
0.5 0.5
at
si
nk
Without Heatsink 10
0.1 0.1 Natural Cooling
Without Heatsink L=3mH
0.05 0.05 IB2=–0.5A
Natural Cooling
Duty:less than 1%
Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
103
2SC4434
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1
19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
4.0
a ø3.2±0.1
IC 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25
b
IB 5 A VCE(sat) IC=8A, IB=1.6A 0.7max V
PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz 3
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 25 8 10 –5 1.6 –3.2 0.5max 2.0max 0.15max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
10 15
A 1A
1.2 14
Base-Emitter Saturation Voltage V B E (s at) (V)
8 600 mA 12
10
400mA 1
6 V B E (sat)
8
7 5 ˚C
e Temp)
25˚C (Cas
)
emp
e Temp)
p)
p)
200m A as 6
p)
4 75˚C (C
Tem
Tem
em
eT
Temp)
eT
ase
as
se
50˚C (C
ase
1
(C
as
Ca
I B =100m A 4
˚C
C (C
(C
C
0˚
C(
25
2 15
0˚C
75˚
25˚
15
2
V C E (sat)
0 0 0
0 1 2 3 4 0.05 0.1 0.5 1 5 10 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 5 2
150˚C
t o n • t s tg • t f ( µ s)
75˚C
DC Cur rent Gain h F E
t s tg 1
25˚C
1 V C C 200V
I C :I B1 :–I B 2 =5:1:2
0.5
Switching Ti me
0.5
t on
10
0.1 tf
5 0.05 0.1
0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
40 40 120
10
0µ
s
M aximum Power Dissipa ti on P C (W)
100
10 10
W
ith
Collect or Cur ren t I C (A)
5
In
5
fin
ite
he
at
si
nk
1 50
1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5 L=3mH
Natural Cooling IB2=–1A
Duty:less than 1%
Without Heatsink
0.1 3.5
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
104
2SC4445
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4445 Unit Symbol Conditions 2SC4445 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2
µA
5.5
IEBO
9.5±0.2
VCEO 800 V VEB=7V 100max
VEBO 7 V V(BR)CEO IC=10mA 800min V
23.0±0.3
ø3.3±0.2
IC 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 a
1.6
IB 1.5 VCE(sat) IC=0.7A, IB=0.14A 0.5max V b
A
3.0
PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
3 3
I B =700mA
Base-Emitter Saturation Voltage V B E (s at) (V )
500 mA
V C E (sat)
2
–55˚C (Case Temp)
mp)
mp)
p)
e Tem
e Te
e Te
100mA 1 V B E (sat)
p)
–55˚C (Case Tem
(Cas
Cas
(Cas
1 p) 1
25˚C (Case Tem
˚C (
50mA
25˚C
–55˚C
Temp)
125
125˚C (Case
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 7 4
125˚C
t o n• t s t g• t f (µ s)
5
25˚C
DC C urrent G ain h FE
V C C 250V t s tg
Transient Thermal Resistance
I C :I B1 :–I B 2 =10:1.5:5
–55˚C
1
Sw it ching Time
10 1
tf
0.5
5
t on 0.5
2 0.1 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 60
5 5
Ma xim um Powe r Dissipat io n P C (W)
50
W
10
µs
ith
Collector Curr ent I C (A)
40
In
s
fin
ite
1 1
he
at
si
nk
0.5 0.5
20
Without Heatsink
Natural Cooling
Without Heatsink
L=3mH
Natural Cooling
IB2=–1.0A
0.1 0.1 Duty:less than 1%
Without Heatsink
3.5
0.05 0.05 0
5 10 50 100 500 1000 5 10 50 100 500 1000 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
105
2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4466 Unit Symbol Conditions 2SC4466 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 120 V ICBO VCB=120V 10max 9.6 2.0±0.1
19.9±0.3
V
4.0
a
IC 6 A hFE VCE=4V, IC=2A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=2A, IB=0.2A 1.5max V
PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
A A A A
0m m 80m
0m 1 00
20 15
50 mA
4 2 4
30mA
mp)
)
p)
Temp
e Te
e Tem
2 20mA 1 2
Cas
(Case
(Cas
˚C (
I B =10mA
–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
100 25˚C
Typ
100
–30˚C
1
50
50
0.5
30 20 0.3
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10 1m
M aximum Power Dissipa ti on P C (W)
10 s
10 ms
Cu t-off Fre quen cy f T (M H Z )
30 5 0m
W
s
Collector Curr ent I C ( A)
ith
DC 40
In
Typ
fin
ite
he
20
at
si
1
nk
20
0.5
10 Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1
–0.02 –0.1 –1 –6 5 10 50 100 0
0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
106
2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 160 V ICBO VCB=160V 10max 9.6 2.0±0.1
19.9±0.3
6 V
4.0
a
IC 8 A hFE VCE=4V, IC=3A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 1.5max V
PC 80(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
A
A
m m A
0m
350m
1 50 100
20
75 m A
6 6
2
50m A
4 4
mp)
)
mp)
Temp
e Te
20mA
e Te
1
Cas
(Case
(Cas
2 2
˚C (
–30˚C
25˚C
125
I B =10mA
I C =8A
4A
2A
0 0 0
0 1 2 3 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Curr ent Gain h FE
Typ
100 100 25˚C
–30˚C 1
50 50
0.5
20 20 0.3
0.02 0.1 0.5 1 5 8 0.02 0.1 0.5 1 5 8 1 10 100 1000
30
Cut-o ff Fr equ ency f T (M H Z )
60
W
5
ith
Collector Cur rent I C (A)
Typ DC
In
fin
ite
he
20 40
at
si
1
nk
0.5
10 20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –8 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
107
2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
10max
1.8
VCBO 200 V ICBO VCB=200V 9.6 2.0±0.1
19.9±0.3
4.0
IC 10 A hFE VCE=4V, IC=3A 50min∗ a ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=0.5A 0.5max V
PC 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
A mA
A
A
00
m 150
0m
0m 2
30
40
8 A 8
100m
75 m A 2
6 6
50 mA
mp)
4
Temp)
)
4
Temp
e Te
1
20mA
Cas
(Case
(Case
˚C (
2 2
25˚C
–30˚C
I B =10mA I C =10A 125
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 300 3
DC Cur rent Gain h FE
125˚C
Transient Thermal Resistance
Typ
100 1
100 25˚C
0.5
50 –30˚C
50
20 20 0.1
0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1 5 10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
3m
s
M aximum Power Dissipa ti on P C (W)
10
Cut- off F req uency f T (M H Z )
30
10
W
10
DC
ith
0m
Collector Curre nt I C ( A)
ms
Typ 5
s
In
fin
ite
he
20 50
at
si
nk
0.5
10 Without Heatsink
Natural Cooling
Without Heatsink
0.1 3.5
0 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
108
High hFE
LOW VCE (sat) 2SC4495
Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4495 Unit Symbol Conditions 2SC4495 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 80 V ICBO VCB=80V 10max µA
VCEO 50 V IEBO VEB=6V 10max µA
8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
IC 3 A hFE VCE=4V, IC=0.5A 500min a
0.8±0.2
b
IB 1 A VCE(sat) IC=1A, IB=20mA 0.5max V
PC 25(Tc=25°C) W fT VCE=12V, IE=–0.1A 40typ MHz
±0.2
3.9
13.0min
Tj 150 °C COB VCB=10V,f=1MHz 30typ pF 1.35±0.15
Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ b. Lot No.
3 1.5 3
A A
3 0m 1 8m
A
12m
2.5
8mA
2 1 2
5m A
3mA 1.5
2mA
Temp)
p)
Tem
mp)
1 0.5 3A 1
e Te
se
1mA
(Case
(Ca
(Cas
I B =0.5mA 2A
˚C
–55˚C
0.5
125
25˚C
I C =1A
0 0 0
0 1 2 3 4 5 6 1 10 100 1000 0 0.5 1 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
3000 5000 7
125˚C
Typ 25˚C 5
DC Cur rent Gain h FE
500
500
100
50
100 20 1
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
s
10 in mm
m
Cu t-off Fre quen cy f T ( MH Z )
s
Typ
Collect or Cur ren t I C (A)
10
40 DC 20
0m
W
s
ith
1 In
fin
ite
150x150x2
0.5 he
1 00x 1 0 at
0x si
20 2 nk
10
Without Heatsink
50x50x2
Natural Cooling
0.1
Without Heatsink
2
0 0.05 0
–0.005 –0.01 –0.1 –1 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
109
2SC4511
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4511 Unit Symbol Conditions 2SC4511 Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 120 V ICBO VCB=120V 10max µA
VCEO 80 V IEBO VEB=6V 10max µA
8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 80min V
ø3.3±0.2
IC 6 A hFE VCE=4V, IC=2A 50min∗ a
0.8±0.2
b
IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V
PC fT VCE=12V, IE=–0.5A 20typ MHz
±0.2
3.9
30(Tc=25°C) W
13.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No.
A A A A
0m m 80m
0m 1 00
20 15
5
50 mA
4 2 4
3 30mA
e Tem )
mp
)
p)
Temp
e Te
2 20mA 1 2
Cas
(Case
(Cas
˚C (
I B =10mA
–30˚C
25˚C
125
1
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
100 25˚C
Typ
100
–30˚C
50 1
50
0.5
30 20 0.4
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
10 m
s
M aximum Power Dissipa ti on P C (W)
5 10
Cu t-off Fre quen cy f T (M H Z )
30 0m
W
DC s
ith
Collector Curre nt I C ( A)
20
In
Typ
fin
ite
he
20 1
at
si
nk
0.5
10
10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
2
0 0.05
–0.02 –0.1 –1 –6 3 5 10 50 100 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
110
2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC4512 Unit Symbol Conditions 2SC4512 Unit
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 120 V ICBO VCB=120V 10max µA 2.0±0.1
16.0±0.7
V
8.8±0.2
IC hFE 50min a ø3.75±0.2
6 A VCE=4V, IC=2A
b
IB 3 A VCE(sat) IC=5A, IB=0.2A 0.5max V
PC 50(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 1.35
4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No.
A A A A
0m m 80m
0m 1 00
20 15
50 mA
4 2 4
30mA
e Tem )
mp
)
p)
Temp
e Te
2 20mA 1 2
Cas
(Case
(Cas
˚C (
I B =10mA
–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
100 25˚C
Typ
100
–30˚C
50 1
50
0.5
30 20 0.4
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
10
100ms 10
m
Ma xim um Powe r Dissipation P C (W)
5 s
40
Cu t-off Fre quen cy f T (M H Z )
30
W
DC
ith
Collector Curre nt I C ( A)
In
Typ
fin
30
ite
he
20 1
at
si
nk
0.5 20
10
Without Heatsink
Natural Cooling 10
0.1
Without Heatsink
2
0 0.05
–0.02 –0.1 –1 –6 3 5 10 50 100 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
111
2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4517 2SC4517A Unit Symbol Conditions 2SC4517 2SC4517A Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 900 1000 V ICBO VCB=800V 100max µA
µA
8.4±0.2
VCEO 550 V IEBO VEB=7V 100max
16.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 550min V ø3.3±0.2
a
IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30
0.8±0.2
b
±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V
13.0min
1.35±0.15
Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
250 250 1 10 –5 0.15 –0.45 0.7max 4max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
A (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
3 0m 1.5 3
40 300mA I C /I B =5 Const.
Base-Emitter Saturation Voltage V B E (s at) (V )
200 mA
150 mA
2 1.0 2
100m A V B E (sat)
1 I B =40mA 0.5 1
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 7 4
t o n• t s t g• t f (µ s)
5
125˚C
DC C urrent G ain h FE
t s tg
Transient Thermal Resistance
25˚C V C C 250V
I C :I B 1 :I B2 =1:0.15:–0.45
1
Sw it ching Time
–55˚C
1
0.5 tf
10
t on 0.5
5 0.1 0.3
0.02 0.05 0.1 0.5 1 3 0.2 0.5 1 3 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 30
50
µs
5 10 5
0µ
Ma xim um Powe r Dissipat io n P C (W)
s
W
ith
Collector Curr ent I C (A)
1 1 20
In
fin
ite
0.5 0.5
he
at
si
nk
Without Heatsink
0.1 0.1 10
Natural Cooling
Without Heatsink L=3mH
0.05 0.05 IB2=–1.0A
Natural Cooling
Duty:less than 1%
Without Heatsink
2SC4517 2SC4517A 2
0.01 0.01 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
112
2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4518 2SC4518A Unit Symbol Conditions 2SC4518 2SC4518A Unit
10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 900 1000 V ICBO VCB=800V 100max µA
550 µA
8.4±0.2
VCEO V IEBO VEB=7V 100max
16.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 550min V ø3.3±0.2
a
IC 5(Pulse10) A hFE VCE=4V, IC=1.8A 10 to 25
0.8±0.2
b
IB 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max V
±0.2
3.9
PC 35(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V
13.0min
Tj 1.35±0.15
150 °C fT VCE=12V, IE=–0.35A 6typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
250 139 1.8 10 –5 0.27 –0.9 0.7max 4max 0.5max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
5 1.5 5
0 mA 600mA I C /I B =5 Const.
70
Base-Emitter Saturation Voltage V B E (s at) (V)
400 mA
4 4
250 mA 1.0
3 3
V B E (sat)
150 mA
2 2
0.5
I B =50mA
1 1
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 7 4
t on• t s t g • t f (µ s)
5
125˚C
DC Cur rent Gain h F E
t s tg
25˚C V C C 250V
I C :I B 1 :I B2 =1:0.15:–0.5
1
Swi tchi ng T im e
–55˚C
tf 1
0.5
10
t on 0.5
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 0.2 0.5 1 5 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 35
10 10 10
0µ
s 30
M aximum Power Dissipa ti on P C (W)
5 5
W
ith
Collect or Cur ren t I C (A)
In
fin
ite
20
1 1
he
at
si
0.5
nk
0.5
Without Heatsink
Natural Cooling 10
L=3mH
Without Heatsink IB2=–1.0A
0.1 0.1
Natural Cooling Duty:less than 1%
0.05 0.05 Without Heatsink
2SC4518 2SC4518A 2
0.03 0.03 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
113
2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4546 Unit Symbol Conditions 2SC4546 Unit 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 600 V ICBO VCB=600V 100max µA
VCEO 400 V IEBO VEB=7V 100max µA
8.4±0.2
16.9±0.3
VEBO 7 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
10 to 25 a
IC 7(Pulse14) A hFE VCE=4V, IC=3A
0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.7max V
PC VBE(sat) IC=3A, IB=0.6A 1.3max V
±0.2
3.9
30(Tc=25°C) W
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
200 67 3 10 –5 0.6 –1.2 0.5max 2max 0.15max b. Lot No.
7 1.0 7
1A 800mA I C / I B =5 Const.
6 60 0m A 6
5 5
300 mA
4 4
200m A 0.5
3 3
)
mp)
Temp
p)
125˚C (Case Temp)
Tem
e Te
(Case
2 2
se
(Cas
25˚C (Case Temp)
(Ca
I B =50m A
25˚C
–30˚C
˚C
1 1
125
–30˚C (Case Temp)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 2 4
125˚C t s tg
t o n• t s t g• t f (µ s)
1
DC C urrent G ain h FE
25˚C
0.5
–30˚C tf
Sw it ching Time
1
t on
0.1
10
0.05 0.5
V C C 200V
I C :I B 1 :I B2 =5:1:–2
5 0.02 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30
10
10 0µ 10
Ma xim um Powe r Dissipat io n P C (W)
5
W
5
ith
Collector Cur rent I C (A)
20
In
fin
ite
he
at
si
1 1
nk
Without Heatsink
Natural Cooling 10
0.5 0.5
Without Heatsink L=3mH
Natural Cooling IB2=–0.5A
Duty:less than 1%
Without Heatsink
2
0.1 0.1 0
10 50 100 500 700 10 50 100 500 700 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
114
2SC4557
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4557 Unit Symbol Conditions 2SC4557 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO 550 V IEBO VEB=7V 100max
VEBO 7 V V(BR)CEO IC=10mA 550min V
23.0±0.3
ø3.3±0.2
IC 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 a
1.6
IB 5 VCE(sat) IC=5A, IB=1A 0.5max V b
A
3.0
PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF
1.05 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
10 2 10
A
1.2 1A
Base-Emitter Saturation Voltage V B E (s at) (V )
80 0m A
8 8
600 mA
6 400m A 6
1 V B E (sat)
p)
)
Temp
Temp)
em
200mA –55˚C (Case Temp)
eT
4 4
Temp)
25˚C (Case
(Case
Cas
(Case
p)
ase Tem
˚C (
I B =100mA 125˚C (C
25˚C
25˚C
125
–55˚C
2 2
p)
Te m
ase
V C E (sat) 125˚C (C 5˚C
0 –5
0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 10 2
125˚ C
t o n• t s t g• t f (µ s)
t s tg
5
DC C urrent G ain h FE
25 ˚C
Transient Thermal Resistance
V C C 250V 1
I C :I B1 :–I B 2 =10:1.5:3
–5 5˚ C
0.5
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80
10 10 10
Ma xim um Powe r Dissipat io n P C (W)
0µ
s
60
W
5 5
ith
Collector Cur rent I C (A)
In
fin
ite
he
40
at
si
1 1
nk
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling IB2=–1.0A 20
Duty:less than 1%
Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 10 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
115
2SC4662
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4662 Unit Symbol Conditions 2SC4662 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA
8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 5(Pulse10) hFE VCE=4V, IC=1.5A 10 to 30 a
A
0.8±0.2
b
IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz 1.35±0.15
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
2 5
Base-Emitter Saturation Voltage V B E (s at) (V)
1 V B E (sat)
Temp)
–55˚C (Case
p)
)
mp)
Temp
em
mp) 2
Te
25˚C (Case
e Te
eT
(Case
Cas
p)
)
ase Tem
(Cas
mp
125˚C (C
˚C (
Te
–55˚C
1
25˚C
e
as
125
C (C
V C E (sat) 125˚
25˚C
0 0
0.01 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
50 3 5
125˚C V C C 200V
t o n• t s t g• t f (µ s)
I C :I B 1 :I B 2 =10:1:–2
DC C urrent G ain h FE
25˚C t s tg
1
–55˚C
Sw it ching Time
0.5
t on 1
10
tf
0.5
5 0.1 0.4
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 3 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30
10 10
Ma xim um Powe r Dissipat io n P C (W)
10
0µ
5 s
5
W
ith
Collector Cur rent I C (A)
20
In
fin
ite
he
at
si
1 1
nk
Without Heatsink
Natural Cooling 10
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling IB2=–0.5A
Duty:less than 1%
Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
116
2SC4706
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1
19.9±0.3
4.0
a
IC 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 ø3.2±0.1
b
IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 130(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 6typ MHz 3
Tstg –55to+150 °C COB VCB=10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
14 2 14
6 A 1.2 A I C /I B =5 Const.
1.
Base-Emitter Saturation Voltage V B E (s at) (V)
12 12
10 10
600mA
8 8
400m A
)
1
emp
mp)
)
Temp
6 6
eT
e Te
V B E (sat)
Cas
(Case
(Cas
200mA
˚C (
4 4
25˚C
125
–55˚C
I B =100mA
2 2
V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
125˚C 5
DC C urrent G ain h FE
t s tg
V C C 250V
25˚C
I C :I B1 :–I B2 =10:1.5:5
1
Sw it ching Time
–55˚C
t on
0.5
tf
10
5 0.1
0.02 0.05 0.1 0.5 1 5 10 14 0.2 0.5 1 5 10 14
Collector Current I C (A) Collector Current I C (A)
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 130
10
0µ
Ma xim um Powe r Dissipat io n P C (W)
s
100
10 10
W
ith
Collector Cur rent I C (A)
In
5
fin
ite
he
at
si
nk
Without Heatsink
1 1 Natural Cooling 50
L=3mH
IB2=–1.0A
0.5 Without Heatsink 0.5 Duty:less than 1%
Natural Cooling
Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
117
2SC4883/4883A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4883 2SC4883A Unit Symbol Conditions 2SC4883 2SC4883A Unit
10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 150 180 V 10max µA
ICBO
VCEO 150 180 V VCB= 150 180 V
8.4±0.2
16.9±0.3
VEBO 6 V IEBO VEB=6V 10max µA
ø3.3±0.2
IC 2 a
A V(BR)CEO IC=10mA 150min 180min V
0.8±0.2
b
IB 1 A hFE VCE=10V, IC=0.7A 60 to 240
PC 20(Tc=25°C) W VCE(sat) 1.0max
±0.2
V
3.9
IC=0.7A, IB=70mA
13.0min
Tj 150 °C fT VCE=12V, IE=–0.7A 120typ MHz 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
20 20 1 10 –5 100 –100 0.5typ 1.5typ 0.5typ b. Lot No.
100mA 60mA
2 3 2
A
30m
A
15m
A
10m 2
1 1
Temp)
emp
I B =5mA
mp)
eT
e Te
1
(Case
Cas
(Cas
˚C (
–55˚C
25˚C
125
I C =2A
0.5A 1A
0 0 0
0 2 4 6 8 10 2 5 10 50 100 500 1000 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
300 300 7
125˚C 5
DC Curr ent Gain h FE
Typ
25˚C
50
50
40 30 1
0.01 0.05 0.1 0.5 1 2 0.01 0.05 0.1 0.5 1 2 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
140
10
Typ
10
D
0m
120
Cut-o ff Fr equ ency f T (M H Z )
1 C
W
s
ith
Collect or Cur ren t I C (A)
In
100 0.5
fin
ite
he
80 10
at
si
nk
60 0.1
Without Heatsink
40 0.5
Natural Cooling
1.2SC4883
20 2.2SC4883A
Without Heatsink
1 2 2
0 0.01 0
–0.01 –0.1 –1 –2 1 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
118
LAPT 2SC4886
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC4886 Symbol Conditions 2SC4886
0.8±0.2
Unit Unit 15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
VCEO 150 V IEBO VEB=5V 100max
23.0±0.3
VEBO 5 V V(BR)CEO IC=25mA 150min V
ø3.3±0.2
IC 14 A hFE VCE=4V, IC=5A 50min∗ a
1.6
b
IB 3 A VCE(sat) IC=5A, IB=500mA 2.0max V
3.0
PC fT VCE=12V, IE=–2A 60typ MHz
3.3
80(Tc=25°C) W
1.75
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
60 0mA 400m
A
A
50 A
0m
300m
75
A
200m
10 A 10
150m
2
10 0m A
p)
p)
50m A 5
em
Tem
5
1
eT
se
as
(Ca
(C
I C =10A
5˚C
I B =20mA
˚C
˚C
12
–30
25
5A
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
–30˚C
0.5
50 50
20 20 0.1
0.02 0.1 0.5 1 5 10 14 0.02 0.1 0.5 1 5 10 14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
1m
10 s
M aximum Power Dissipa ti on P C (W)
10 m
Typ s
10 0m
Cut-o ff F requ ency f T (MH Z )
60 DC s 60
W
ith
Co lle ctor Cu rre nt I C (A)
5
In
fin
ite
he
40 40
at
si
1
nk
0.5
20 Without Heatsink 20
Natural Cooling
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 2 5 10 50 100 200 0 25 50 75 100 125 150
150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
119
2SC4907
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit 4.2±0.2
10.1±0.2
4.0±0.2
VCBO 600 ICBO VCB=600V 1max mA 2.8 c0.5
V
VCEO 500