® DMV1500M

DAMPER + MODULATION DIODE FOR VIDEO

DAMPER MODULATION
MAIN PRODUCT CHARACTERISTICS

MODUL DAMPER 1 2 3

IF(AV) 3A 6A
VRRM 600 V 1500 V
trr (max) 50 ns 135 ns
VF (max) 1.4 V 1.65 V
3
2
1

FEATURES AND BENEFITS Insulated TO-220AB

■ Full kit in one package
■ High breakdown voltage capability
■ Very fast recovery diode
■ Specified turn on switching characteristics
■ Low static and peak forward voltage drop for low
dissipation
■ Insulated version:
Insulated voltage = 2500 VRMS
Capacitance = 7 pF
■ Planar technology allowing high quality and
best electrical characteristics
■ Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
(Bending option F5 available)
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.

ABSOLUTE RATINGS (limiting values, per diode)

Value
Symbol Parameter Unit
MODUL DAMPER
VRRM Repetitive peak reverse voltage 600 1500 V
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 35 75 A
Tstg Storage temperature range - 40 to + 150 °C
Tj Maximum operating junction temperature 150

July 2001 - Ed: 6A 1/9

DMV1500M

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-c) Damper junction to case 4.8 °C/W
Rth(j-c) Modulation junction to case 6

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES

Value
Symbol Parameter Test conditions Tj = 25°C Tj = 125°C Unit
Typ. Max. Typ. Max.
VF * Forward voltage drop IF = 6 A 1.4 2.2 1.2 1.65 V
IR ** Reverse leakage current VR = 1500V 100 100 1000 µA
Pulse test : * tp = 380 µs, δ < 2%
**tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
2
P = 1.37 x IF(AV) + 0.047 x IF (RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

Value
Test
Symbol Parameter Tj = 25°C Tj = 125°C Unit
conditions
Typ. Max. Typ. Max.
VF * Forward voltage drop IF = 3A 1.8 1.1 1.4 V
IR ** Reverse leakage current VR = 600V 20 3 50 µA
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
2
P = 1.12 x IF(AV) + 0.092 x IF (RMS)

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
trr Reverse recovery time IF = 100mA Tj = 25°C 750 ns
IR = 100mA
IRR = 10mA
trr Reverse recovery time IF = 1A Tj = 25°C 110 135 ns
dIF/dt = -50A/µs
VR = 30V

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 DMV1500M

RECOVERY CHARACTERISTICS OF THE MODULATION DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
trr Reverse recovery time IF = 100mA Tj = 25°C 110 350 ns
IR = 100mA
IRR = 10mA
trr Reverse recovery time IF = 1A Tj = 25°C 50 ns
dIF/dt = -50A/µs
VR = 30V

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
tfr Forward recovery time IF = 6A Tj = 100°C 570 ns
dIF/dt = 80A/µs
VFR = 3V
VFP Peak forward voltage IF = 6A Tj = 100°C 21 28 V
dIF/dt = 80A/µs

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
tfr Forward recovery time IF = 3A Tj = 100°C 240 ns
dIF/dt = 80A/µs
VFR = 2V
VFP Peak forward voltage IF = 3A Tj = 100°C 8 V
dIF/dt = 80A/µs

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DMV1500M
Fig. 1-1: Power dissipation versus peak forward Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform, δ = 0.45) (damper current (triangular waveform, δ = 0.45) (modula-
diode). tion diode).

PF(av)(W) PF(av)(W)
2.2 2.2
2.0 2.0
1.8 1.8
1.6 1.6
1.4 1.4
1.2 1.2
1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
0.2 Ip(A) 0.2 Ip(A)
0.0 0.0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Fig. 2-1: Average forward current versus ambient Fig. 2-2: Average forward current versus ambient
temperature (damper diode). temperature (modulation diode).

IF(av)(A) IF(av)(A)
8 4.0
7 3.5
Rth(j-a)=Rth(j-c) Rth(j-a)=Rth(j-c)
6 3.0
5 2.5
4 2.0
3 1.5
2 T T
1.0
1 Tamb(°C) 0.5
δ=tp/T tp δ=tp/T tp Tamb(°C)
0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

Fig. 3-1: Forward voltage drop versus forward Fig. 3-2: Forward voltage drop versus forward
current (damper diode). current (modulation diode).

IFM(A) IFM(A)
15.0 10.0
Typical
Tj=125°C 9.0 Typical
Tj=125°C
8.0
10.0 Maximum 7.0
Tj=25°C
6.0 Maximum
Tj=125°C
Maximum Maximum
Tj=125°C 5.0 Tj=25°C

4.0
5.0
3.0
2.0
VFM(V) 1.0 VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

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 DMV1500M

Fig. 4: Relative variation of thermal impedance Fig. 5-1: Non repetitive surge peak forward current
junction to case versus pulse duration. versus overload duration (damper diode).

K=[Zth(j-c)/Rth(j-c)] IM(A)
1.0 40
35
δ = 0.5
30
0.5
δ = 0.2 25
δ = 0.1 20
15 Tc=100°C
0.2 T
Single pulse 10 IM

tp(s) 5 t(s)
δ=tp/T
t
tp
δ=0.5
0.1 0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0

Fig. 5-2: Non repetitive surge peak forward current Fig. 6-1: Reverse recovery charges versus dIF/dt
versus overload duration (modulation diode). (damper diode).

IM(A) Qrr(nc)
30 1000
IF= 6A
900 90% confidence
25 Tj=125°C
800
20 700
600
15 500
Tc=100°C 400
10
300
5
IM
200
t
δ=0.5
t(s) 100 dIF/dt(A/µs)
0 0
1E-3 1E-2 1E-1 1E+0 0.1 0.2 0.5 1.0 2.0 5.0

Fig. 6-2: Reverse recovery charges versus dIF/dt Fig. 7-1: Reverse recovery current versus dIF/dt
(modulation diode). (damper diode).

Qrr(nC) IRM(A)
200 2.0
IF= 3A IF= 6A
90% confidence 1.8 90% confidence
Tj=125°C Tj=125°C
1.6
150
1.4
1.2
100 1.0
0.8
0.6
50
0.4
dIF/dt(A/µs) 0.2 dIF/dt(A/µs)
0 0.0
0.1 1.0 10.0 100.0 0.1 0.2 0.5 1.0 2.0 5.0

® 5/9
DMV1500M

Fig. 7-2: Reverse recovery current versus dIF/dt Fig. 8-1: Transient peak forward voltage versus
(modulation diode). dIF/dt (damper diode).

IRM(A) VFP(V)
6 40
IF= 3A
IF= 6A
90% confidence
5 Tj=125°C
35 90% confidence
Tj=125°C
30
4
25
3 20
15
2
10
1 5
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
1 10 100 200 0 20 40 60 80 100 120 140

Fig. 8-2: Transient peak forward voltage versus Fig. 9-1: Forward recovery time versus dIF/dt
dIF/dt (modulation diode). (damper diode).

VFP(V) tfr(ns)
12 800
IF= 3A
11 90% confidence
IF= 6A

10 Tj=125°C 750 90% confidence

Tj=125°C
9 700 VFR=3V

8
7 650
6 600
5
4 550
3 500
2
450 dIF/dt(A/µs)
1 dIF/dt(A/µs)
0 400
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140

Fig. 9-2: Forward recovery time versus dIF/dt Fig. 10: Dynamic parameters versus junction tem-
(modulation diode). perature (damper & modulation diodes).

tfr(ns) VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
200 1.2
IF=IF(av)
90% confidence
175 Tj=125°C
Vfr=2V 1.0
150
125 0.8
VFP
100 0.6
75 IRM
0.4
50
Qrr
25 0.2
dIF/dt(A/µs) Tj(°C)
0 0.0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140

6/9 ®
DMV1500M
Fig. 11: Junction capacitance versus reverse voltage
applied (typical values) (damper & modulation di-
odes).

C(pF)
100 Tj=25°C
F=1MHz

10

VR(V)
1
1 10 100 200

ORDERING INFORMATION

DMV1500M / F5

LEAD BENDING (OPTION)

DAMPER AND MODULATION DIODES FOR VIDEO

® 7/9
DMV1500M
PACKAGE MECHANICAL DATA
TO-220AB F5 OPTION

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 15.20 15.90 0.598 0.625
a1 24.16 26.90 0.951 1.059
B C
b2 a3 1.65 2.41 0.064 0.094
B 10.00 10.40 0.393 0.409
L
F
b1 0.61 0.88 0.024 0.034
ØI
b2 1.23 1.32 0.048 0.051
A C 4.40 4.60 0.173 0.181
l4 c1 0.49 0.70 0.019 0.027
a1
c2 2.40 2.72 0.094 0.107
c2
R2 a3 e 2.40 2.70 0.094 0.106
l3
R1 F 6.20 6.60 0.244 0.259
l2 I 3.75 3.85 0.147 0.151
L 2.65 2.95 0.104 0.116
c2 c1 I2 1.14 1.70 0.044 0.066
b1 M1 l3 1.14 1.70 0.044 0.066
e l4 15.80 16.80 0.622 0.661
16.40 typ. 0.645 typ.
M1 2.92 3.30 0.114 0.129
R1 1.40 typ. 0.055 typ.
R2 1.40 typ. 0.055 typ.

PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT ■ Cooling method: by conduction (c)

■ Recommended torque value: 0.8 m.N.
■ Maximum torque value: 1 m.N.

3.1mm
1mm
2.2mm

2.54mm

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 DMV1500M
PACKAGE MECHANICAL DATA
TO-220AB

DIMENSIONS
REF. Millimeters Inches
B C
b2
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
L a1 3.75 0.147
F a2 13.00 14.00 0.511 0.551
I
B 10.00 10.40 0.393 0.409
A
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
l4
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
a1 c2
c2 2.40 2.72 0.094 0.107
l3 e 2.40 2.70 0.094 0.106
l2
a2
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
b1 M
L 2.65 2.95 0.104 0.116
e
c1
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

■ Cooling method: by conduction (c)

■ Recommended torque value: 0.8 m.N.
■ Maximum torque value: 1 m.N.

Type Marking Package Weight Base qty Delivery mode

DMV1500M DMV1500M TO-220AB 2.2 g. 50 Tube
DMV1500MF5
■ Epoxy meets UL94, V0

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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® 9/9