Si2307DS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET


  
VDS (V) rDS(on) (
) ID (A)
0.080 @ VGS = –10 V –3
–30
0.140 @ VGS = –4.5 V –2

TO-236
(SOT-23)

G 1

3 D

S 2

Top View
Si2307DS (A7)*
*Marking Code

         



Parameter Symbol Limit Unit
Drain-Source Voltage VDS –30
V
Gate-Source Voltage VGS
20

TA= 25C –3
Continuous Drain Current (TJ = 150C)a, b ID
TA= 70C –2.5
A
Pulsed Drain Current IDM –12
Continuous Source Current (Diode Conduction)a, b IS –1.25

TA= 25C 1.25

Power Dissipationa, b PD W
TA= 70C 0.8

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C

    

Parameter Symbol Typical Maximum Unit
t  5 sec 100
Maximum Junction-to-Ambienta RthJA C/W
Steady State 130

Notes
a. Surface mounted on FR4 board.
b. t  5 sec.

Document Number: 70843 www.vishay.com
FaxBack 408-970-5600

S-60570—Rev. A, 16-Nov-98 2-1
Si2307DS
Vishay Siliconix


       
 
 


Limits

Parameter Symbol Test Conditions Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –1.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = –24 V, VGS = 0 V –1

Zero Gate Voltage Drain Current IDSS mA
TJ = 55C –10

On-State Drain Currenta ID(on) VDS v –5 V, VGS = –10 V –6 A

VGS = –10 V, ID = –3 A 0.064 0.080

Drain-Source On Resistancea
Drain Source On-Resistance rDS(on)
DS( ) W
VGS = –4.5 V, ID = –2.5 A 0.103 0.140

Forward Transconductancea gfs VDS = –10V, ID = –3 A 4.5 S

Diode Forward Voltage VSD IS = –1.25 A, VGS = 0 V –1.2 V

Dynamicb
Total Gate Charge Qg 10 15

Gate-Source Charge Qgs VDS = –15

15 V,
V VGS = –10
10 V 1.9 nC
C
ID ^ –3
3A
Gate-Drain Charge Qgd 2

Input Capacitance Ciss 565

Output Capacitance Coss VDS = –15

15 V,
V VGS = 0,
0 f = 1 MHz
MH 126 pF
F

Reverse Transfer Capacitance Crss 75

Switchingb
td(on) 10 20
Turn-On Time
tr VDD = –15 V RL = 15 W
15 V, 9 20
ID ^ –1.0 A, VGEN = –10 V ns
td(off) RG = 6 W 27 50
Turn-Off Time
tf 7 16

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

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FaxBack 408-970-5600 Document Number: 70843

2-2 S-60570—Rev. A, 16-Nov-98
 Si2307DS
Vishay Siliconix

 
       
Output Characteristics Transfer Characteristics
12 12
TC = –55C
VGS = 10 thru 5 V
10 10 25C

4V
I D – Drain Current (A)

I D – Drain Current (A)

8 8
125C
6 6

4 4

3V
2 2

0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.6 800

700
Ciss
r DS(on) – On-Resistance (
)

600
C – Capacitance (pF)

0.4
500

400

300
0.2
VGS = 4.5 V 200
Coss
100
VGS = 10 V Crss
0 0
0 2 4 6 8 10 0 6 12 18 24 30

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.6
VDS = 15 V VGS = 10 V
ID = 3 A ID = 3 A
V GS – Gate-to-Source Voltage (V)

8 1.4
r DS(on) – On-Resistance

6 1.2
(Normalized)

4 1.0

2 0.8

0 0.6
0 2 4 6 8 10 –50 0 50 100 150

Qg – Total Gate Charge (nC) TJ – Junction Temperature (C)

Document Number: 70843 www.vishay.com
FaxBack 408-970-5600

S-60570—Rev. A, 16-Nov-98 2-3
Si2307DS
Vishay Siliconix

 
       
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1.0
10.0

0.8

r DS(on) – On-Resistance ( W )
I S – Source Current (A)

0.6
TJ = 150C
ID = –3 A
1.0
TJ = 25C 0.4

0.2

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.6 12

10
0.4
V GS(th) Variance (V)

8
0.2
Power (W)

ID = 250 mA 6

0.0 TA = 25C
4 Single Pulse

–0.2
2

–0.4 0
–50 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 500

TJ – Temperature (C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1.00
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:

0.1 PDM
0.10
0.05 t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 130C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4 10–3 10–2 10–1 1 10 100 500
Square Wave Pulse Duration (sec)

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FaxBack 408-970-5600 Document Number: 70843

2-4 S-60570—Rev. A, 16-Nov-98
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