Power Transistors

2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output 20.0±0.5 5.0±0.3
(3.0)

(4.0)
φ 3.3±0.2

(10.0) (6.0)
■ Features

(3.0)
26.0±0.5
• High breakdown voltage, and high reliability through the use of a

(2.0)
glass passivation layer

(2.0)
(1.5)
• High-speed switching (1.5)

• Wide area of safe operation (ASO) 2.0±0.3

(1.5)

(2.5)
Solder Dip
2.7±0.3

20.0±0.5
3.0±0.3

■ Absolute Maximum Ratings TC = 25°C

1.0±0.2
0.6±0.2

Parameter Symbol Rating Unit 5.45±0.3

10.9±0.5
Collector to base voltage VCBO 1 500 V
Collector to emitter voltage VCES 1 500 V
1: Base
VCEO 600 V 1 2 3
2: Collector
Emitter to base voltage VEBO 7 V 3: Emitter
TOP-3L Package
Peak collector current ICP 30 A
Collector current IC 20 A Marking Symbol: C5584
Base current IB 8 A
Internal Connection
Collector power TC = 25°C PC 150 W
C
dissipation Ta = 25°C 3.5
Junction temperature Tj 150 °C B
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 1 000 V, IE = 0 50 µA
VCB = 1 500 V, IE = 0 1 mA
Emitter cutoff current IEBO VEB = 7 V, IC = 0 50 µA
Forward current transfer ratio hFE VCE = 5 V, IC = 10 A 7 14
Collector to emitter saturation voltage VCE(sat) IC = 10 A, IB = 2.5 A 3 V
Base to emitter saturation voltage VBE(sat) IC = 10 A, IB = 2.5 A 1.5 V
Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
Storage time tstg IC = 10 A, Resistance loaded 2.7 µs
Fall time tf IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs