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FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.18 Ω
Lower Input Capacitance ID = 18 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
TO-220
Lower RDS(ON) : 0.144 Ω(Typ.)
1
2
3
Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJC Junction-to-Case -- 0.9
o
R θCS Case-to-Sink 0.5 -- C/W
RθJA Junction-to-Ambient -- 62.5
Rev. B
Notes ;
O Repetitive Rating : Pulse Width Limited by Maximum Junction
1 Temperature
L=1mH, I AS=18A, V DD=50V, R G=27Ω , Starting T J =25 C
o
O2
[A]
10 V
8.0 V
7.0 V
ID , Drain Current
ID , Drain Current
6.0 V
101 101
5.5 V
5.0 V
Bottom : 4.5 V
150 oC
100 100
@ Notes :
25 oC
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
1. 250 µs Pulse Test 3. 250 µs Pulse Test
- 55 oC
2. TC = 25 oC
10-1 10-1
10-1 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
[A]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
Drain-Source On-Resistance
0.4
IDR , Reverse Drain Current
VGS = 10 V
0.3
101
RDS(on) , [Ω]
0.2
100
VGS = 20 V
0.1
@ Notes :
1. VGS = 0 V
150 oC
@ Note : TJ = 25 oC 2. 250 µs Pulse Test
25 oC
0.0 10-1
0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
2000
[V]
Crss= Cgd
VGS , Gate-Source Voltage
1000
C oss 5
@ Notes :
1. VGS = 0 V
500 2. f = 1 MHz
C rss
@ Notes : ID = 18.0 A
00 0
10 101 0 10 20 30 40 50
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
N-CHANNEL
IRF640A POWER MOSFET
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
BVDSS , (Normalized)
RDS(on) , (Normalized)
2.5
1.1
2.0
1.0 1.5
1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 µA 2. ID = 9.0 A
0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
20
[A]
[A]
ID , Drain Current
15
100 µs
1 ms
101 10 ms
10
DC
100 @ Notes :
5
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1 0
100 101 102 25 50 75 100 125 150
VDS , Drain-Source Voltage [V] Tc , Case Temperature [ oC]
100
D=0.5
0.2 @ Notes :
o
-1
1. Zθ J C (t)=0.9 C/W Max.
10 0.1
2. Duty Factor, D=t1 /t2
0.05 3. TJ M -TC =PD M *Z (t)
θJC
Z JC(t) ,
0.02
PDM
0.01
single pulse t1
10- 2
θ
t2
N-CHANNEL
POWER MOSFET
“ Current Regulator ”
VGS
Same Type
50KΩ as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
R1 R2
RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off
RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
N-CHANNEL
IRF640A POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
--
IS
L
Driver
VGS
RG Same Type
as DUT VDD
IRM
Vf VDD
Body Diode
Forward Voltage Drop
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In Design product development. Specifications may change in
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