BDW42G (NPN),

BDW46G,BDW47G (PNP)

Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed www.onsemi.com
switching applications.

Features 15 AMP DARLINGTON

• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON
• Collector Emitter Sustaining Voltage @ 30 mAdc: POWER TRANSISTORS
VCEO(sus) = 80 Vdc (min) − BDW46 80−100 VOLT, 85 WATT
100 Vdc (min) − BDW42/BDW47
• Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc 4
• Monolithic Construction with Built−In Base Emitter Shunt resistors
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS 1
2
3
Rating Symbol Value Unit
TO−220
Collector-Emitter Voltage VCEO Vdc CASE 221A
BDW46 80 STYLE 1
BDW42, BDW47 100
Collector-Base Voltage VCB Vdc MARKING DIAGRAM
BDW46 80
BDW42, BDW47 100
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current IC 15 Adc
BDWxx
Base Current IB 0.5 Adc
AYWWG
Total Device Dissipation PD
@ TC = 25°C 85 W
Derate above 25°C 0.68 W/°C
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range BDWxx = Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the x = 42, 46, or 47
device. If any of these limits are exceeded, device functionality should not be A = Assembly Location
assumed, damage may occur and reliability may be affected. Y = Year
WW = Work Week
G = Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit ORDERING INFORMATION
Thermal Resistance, RqJC 1.47 °C/W
Junction−to−Case Device Package Shipping

BDW42G TO−220 50 Units/Rail

(Pb−Free)

BDW46G TO−220 50 Units/Rail

*For additional information on our Pb−Free strategy and soldering details, please (Pb−Free)
download the ON Semiconductor Soldering and Mounting Techniques BDW47G TO−220 50 Units/Rail
Reference Manual, SOLDERRM/D. (Pb−Free)

© Semiconductor Components Industries, LLC, 2016 Publication Order Number:

August, 2016 − Rev. 17 BDW42/D
 BDW42G (NPN), BDW46G, BDW47G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) BDW46 80 −
BDW42/BDW47 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) BDW46 − 2.0
(VCE = 50 Vdc, IB = 0) BDW42/BDW47 − 2.0
Collector Cutoff Current ICBO mAdc
(VCB = 80 Vdc, IE = 0) BDW46 − 1.0
(VCB = 100 Vdc, IE = 0) BDW42/BDW47 − 1.0
Emitter Cutoff Current IEBO − 2.0 mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE
(IC = 5.0 Adc, VCE = 4.0 Vdc) 1000 −
(IC = 10 Adc, VCE = 4.0 Vdc) 250 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 5.0 Adc, IB = 10 mAdc) − 2.0
(IC = 10 Adc, IB = 50 mAdc) − 3.0
Base−Emitter On Voltage VBE(on) − 3.0 Vdc
(IC = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector IS/b Adc
Current with Base Forward Biased
BDW42 VCE = 28.4 Vdc 3.0 −
VCE = 40 Vdc 1.2 −
BDW46/BDW47 VCE = 22.5 Vdc 3.8 −
VCE = 36 Vdc 1.2 −
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio fT 4.0 − MHz
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 − 200
BDW46/BDW47 − 300
Small−Signal Current Gain hfe 300 −
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.

www.onsemi.com
2
 BDW42G (NPN), BDW46G, BDW47G (PNP)

90

80

PD, POWER DISSIPATION (WATTS)

70

60

50
40
30

20

10

0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve

5.0
VCC ts BDW46, 47 (PNP)
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V 3.0 BDW42 (NPN)
D1 MUST BE FAST RECOVERY TYPES, e.g.: 2.0
1N5825 USED ABOVE IB [ 100 mA
RC
MSD6100 USED BELOW IB [ 100 mA SCOPE tf
1.0
TUT
t, TIME (s)
μ

RB 0.7
V2
0.5
APPROX
+ 8.0 V 51 D1 0.3
[ 8.0 k [ 150 tr
0 0.2 VCC = 30 V
V1 + 4.0 V IC/IB = 250
0.1 IB1 = IB2
APPROX 25 ms for td and tr, D1 id disconnected
- 12 V 0.07 TJ = 25°C td @ VBE(off) = 0 V
and V2 = 0 0.05
tr, tf v 10 ns 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
For NPN test circuit reverse all polarities
DUTY CYCLE = 1.0%
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times

1.0
THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t) EFFECTIVE TRANSIENT

0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 0.02 RqJC = 1.92°C/W
0.05 D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.03 SINGLE PULSE t2
READ TIME AT t1
0.02 0.01
DUTY CYCLE, D = t1/t2 TJ(pk) - TC = P(pk) RqJC(t)

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

www.onsemi.com
3
 BDW42G (NPN), BDW46G, BDW47G (PNP)

ACTIVE−REGION SAFE OPERATING AREA

50 50
0.1 ms 0.1 ms
20 20
IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 TJ = 25°C 10 TJ = 25°C
1.0 ms 1.0 ms
0.5 ms 0.5 ms
5.0 5.0
SECOND BREAKDOWN LIMIT dc SECOND BREAKDOWN LIMIT
2.0 BONDING WIRE LIMIT 2.0 BONDING WIRE LIMIT
dc
1.0 THERMAL LIMITED 1.0 THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)
0.5 0.5

0.2 0.2
0.1 0.1 BDW46
BDW42 BDW47
0.05 0.05
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. BDW42 Figure 6. BDW46 and BDW47

There are two limitations on the power handling ability of a Second breakdown pulse limits are valid for duty cycles to
transistor: average junction temperature and second 10% provided TJ(pk) ≤ 200°C. TJ(pk) may be calculated from
breakdown. Safe operating area curves indicate IC − VCE limits the data in Figure 4. At high case temperatures, thermal
of the transistor that must be observed for reliable operation; limitations will reduce the power that can be handled to values
i.e., the transistor must not be subjected to greater dissipation less than the limitations imposed by second breakdown.
than the curves indicate. The data of Figure 5 and 6 is based on *Linear extrapolation
TJ(pk) = 200°C; TC is variable depending on conditions.

10,000 300
TJ = + 25°C
hFE, SMALL-SIGNAL CURRENT GAIN

5000
3000 200
2000
C, CAPACITANCE (pF)

1000

500
100 Cob
300 TJ = 25°C
200
VCE = 3.0 V
70 Cib
100 IC = 3.0 A
50 50
30 BDW46, 47 (PNP)
BDW46, 47 (PNP)
20 BDW42 (NPN)
BDW42 (NPN)
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Small−Signal Current Gain Figure 8. Capacitance

www.onsemi.com
4
 BDW42G (NPN), BDW46G, BDW47G (PNP)

BDW42 (NPN) BDW46, 47 (PNP)

20,000 20,000
VCE = 3.0 V VCE = 3.0 V
10,000 10,000
hFE, DC CURRENT GAIN

7000

hFE, DC CURRENT GAIN

5000 TJ = 150°C 5000 TJ = 150°C
3000 3000
2000 2000 25°C
25°C

1000 1000
-55°C 700
500 -55°C
500
300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 9. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0
TJ = 25°C
TJ = 25°C
2.6
2.6
IC = 2.0 A 4.0 A 6.0 A
IC = 2.0 A 4.0 A 6.0 A
2.2
2.2

1.8
1.8

1.4
1.4

1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

VBE(sat) @ IC/IB = 250

1.5 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 11. “On” Voltages

www.onsemi.com
5
 BDW42G (NPN), BDW46G, BDW47G (PNP)

BDW42 (NPN) BDW46, 47 (PNP)

+5.0 +5.0

θV, TEMPERATURE COEFFICIENTS (mV/°C)

θV, TEMPERATURE COEFFICIENT (mV/ °C)

+4.0 +4.0
*IC/IB v 250 *IC/IB v 250
+3.0 +3.0
+ 25°C to 150°C
+2.0 25°C to 150°C +2.0
+1.0 +1.0
-55°C to 25°C
0 0
-1.0 *qVC for VCE(sat) -1.0 *qVC for VCE(sat)
-2.0 -2.0
25°C to 150°C qVB for VBE -55°C to + 25°C
-3.0 -3.0
qVB for VBE + 25°C to 150°C -55°C to +25°C
-4.0 -55°C to 25°C -4.0
-5.0 -5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 12. Temperature Coefficients

105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

VCE = 30 V VCE = 30 V
103 103

102 102
TJ = 150°C TJ = 150°C
101 101
100°C
100 100 100°C
25°C
25°C
10-1 10-1
+0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region

NPN COLLECTOR PNP COLLECTOR

BDW42 BDW46
BDW47

BASE BASE

[ 8.0 k [ 60 [ 8.0 k [ 60

EMITTER EMITTER

Figure 14. Darlington Schematic

www.onsemi.com
6
 BDW42G (NPN), BDW46G, BDW47G (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

www.onsemi.com BDW42/D
7