ON Semiconductor

Darlington Transistors
NPN Silicon BC517

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 30 Vdc
Collector–Base Voltage VCB 40 Vdc
Emitter–Base Voltage VEB 10 Vdc
1
Collector Current — Continuous IC 1.0 Adc 2
3
Total Power Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 12 mW/°C CASE 29–11, STYLE 17
TO–92 (TO–226AA)
Total Power Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit COLLECTOR 1
Thermal Resistance, Junction to Ambient RJA 200 °C/W
BASE
Thermal Resistance, Junction to Case RJC 83.3 °C/W 2

EMITTER 3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CES 30 — — Vdc
(IC = 2.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage V(BR)CBO 40 — — Vdc
(IC = 10
Adc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 10 — — Vdc
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current ICES — — 500 nAdc
(VCE = 30 Vdc)
Collector Cutoff Current ICBO — — 100 nAdc
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current IEBO — — 100 nAdc
(VEB = 10 Vdc, IC = 0)

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

May, 2001 – Rev. 2 BC517/D
 BC517

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain hFE 30,000 — — —
(IC = 20 mAdc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage VCE(sat) — — 1.0 Vdc
(IC = 100 mAdc, IB = 0.1 mAdc)
Base–Emitter On Voltage VBE(on) — — 1.4 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2) fT — 200 — MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width  2.0%.

2. fT = |hfe| • ftest

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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 BC517

NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS ≈ 0 1.0
200
0.7
en, NOISE VOLTAGE (nV)

i n, NOISE CURRENT (pA)

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2

100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 2. Noise Voltage Figure 3. Noise Current

200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

BANDWIDTH = 10 Hz TO 15.7 kHz

12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)

10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0

10 0
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kΩ) RS, SOURCE RESISTANCE (kΩ)

Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure

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 BC517

SMALL–SIGNAL CHARACTERISTICS

20 4.0
VCE = 5.0 V

|h fe |, SMALL-SIGNAL CURRENT GAIN

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)

7.0 Cibo
1.0
5.0 Cobo 0.8
0.6

3.0 0.4

2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance Figure 7. High Frequency Current Gain

200k 3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 125°C TJ = 25°C
100k
2.5
70k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN

50k 25°C

30k 2.0
20k
1.5
10k
7.0k
-
55°C
5.0k 1.0
VCE = 5.0 V
3.0k
2.0k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (µA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.6 -
1.0
RθV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C

TJ = 25°C
1.4 -
2.0 *RVC FOR VCE(sat)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 1000 -
55°C TO 25°C

1.2 -
3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 -
4.0
VB FOR VBE
0.8 -
5.0 -
55°C TO 25°C
VCE(sat) @ IC/IB = 1000

0.6 -
6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

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 BC517

1.0
0.7
D = 0.5
0.5
0.2
RESISTANCE (NORMALIZED)

0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
()

0.03 ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t)

0.02 ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t)

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)

Figure 12. Thermal Response

1.0k
FIGURE A
700 1.0 ms
500
IC, COLLECTOR CURRENT (mA)

tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s

100
70
50
t1
30
CURRENT LIMIT
20 THERMAL LIMIT 1/f
SECOND BREAKDOWN LIMIT t
10 DUTYCYCLE
t1f
1
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 tP
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

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 BC517

PACKAGE DIMENSIONS

TO–92 (TO–226)
CASE 29–11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X–X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N

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 BC517

Notes

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 BC517

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