TGA2238-CP

8 – 11 GHz 50 W GaN Power Amplifier

Product Description
Qorvo’s TGA2238-CP is a packaged, high power X-band
amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on
SiC production process. Operating from 8 – 11 GHz, the
TGA2238-CP achieves 50 W saturated output power with
24 dB power gain and 34 % power-added efficiency.

The TGA2238-CP is packaged in a 10-lead 15 x 15 mm

bolt-down package with a Cu base for superior thermal
management. Both RF ports (RF input internally DC
blocked) are matched to 50 ohms allowing for simple
system integration.
Product Features
The TGA2238-CP is ideally suited for both military and
commercial X-band radar systems and data links. • Frequency Range: 8 – 11 GHz
• PSAT: 47 dBm @ PIN = 23 dBm
Lead-free and RoHS compliant.
• PAE: 34% @ PIN = 23 dBm
• Power Gain: 24 dB @ PIN = 23 dBm
• Small Signal Gain: > 28 dB
• Return Loss: > 9 dB
• Bias: VD = +28 V, IDQ = 650 mA, VG = −2.6 V typical
(Pulsed VD: PW = 100 µs and DC = 10 %)
• Package Dimensions: 15.2 x 15.2 x 3.5 mm
• Package base is pure Cu offering superior thermal
management

Functional Block Diagram Performance is typical across frequency. Please

reference electrical specification table and data plots for
more details

1 10
2 9 Applications
3 8
4 • X-band Radar
7
• Datalinks
5 6

Ordering Information
Part No. Description
TGA2238-CP 8 – 11 GHz 50 W GaN Power Amplifier

1115956 Evaluation Board

Data Sheet Rev. B, March 11, 2019 - 1 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Value / Range Parameter Value / Range
Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V
Gate Voltage Range (VG) −8 to 0 V Drain Current (IDQ) 650 mA
Drain Current (ID) 8 A Temperature Range −40 to +85 ºC
Gate Current (IG) See plot page 9 Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
Power Dissipation (PDISS), 85°C
158 W recommended operating conditions.
Pulsed: PW = 100 µs, DC = 10%
Input Power (PIN), 50Ω, 85°C, VD = 28V,
30 dBm
Pulsed: PW = 100 µs, DC = 10%
Input Power (PIN), 85°C, VSWR 3:1,
VD = 28V, Pulsed: PW = 100 µs, 30 dBm
DC = 10%
Lead Soldering Temperature
260 ºC
(30 Seconds)
Storage Temperature −55 to 150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions is
not implied.

Electrical Specifications
Parameter Min Typ Max Units
Operational Frequency Range 8 11 GHz
Small Signal Gain >28 dB
Input Return Loss >9 dB
Output Return Loss >10 dB
Output Power (@ PIN = 23 dBm) 47 dBm
Power Added Efficiency (@ PIN = 23 dBm) 34 %
Power Gain (@ PIN = 23 dBm) 24 dB
Small Signal Gain Temperature Coefficient −0.056 dBm/°C
Test conditions unless otherwise noted: 25 ºC, VD = +28 V, IDQ = 650 mA, VG = −2.6 V typical, Pulsed VD: PW = 100 µs, DC = 10 %

Data Sheet Rev. B, March 11, 2019 - 2 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Typical Performance – Large Signal (Pulsed)

Output Power vs. Frequency vs. Voltage Output Power vs. Frequency vs. Temp.
49 49
Temp. = 25 °C PIN = 23 dBm PIN = 23 dBm
48 47

47

Output Power (dBm)

45
46
Output power (dBm)

43
45 25 V -40 °C
28 V 41 25 °C
44 30 V 85 °C
39
43
IDQ = 650 mA 37 VD = 28 V, IDQ = 650 mA
42
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
41 35
7.0 8.0 9.0 10.0 11.0 12.0 7.0 8.0 9.0 10.0 11.0 12.0
Frequency (GHz) Frequency (GHz)

Output Power vs. Input Power vs. Freq. Output Power vs. Frequency vs. PIN
49 49
Temp. = 25 °C Temp. = 25 °C
47
47
45
Output Power (dBm)

Output Power (dBm)

43 45

41 20 dBm
43
8 GHz 22 dBm
39
9 GHz 23 dBm
41
37 10 GHz 25 dBm

35 11 GHz
39
33 VD = 28 V, IDQ = 650 mA
VD = 28 V, IDQ = 650 mA 37
31
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
29 35
0 5 10 15 20 25 7 8 9 10 11 12
Input Power (dBm) Frequency (GHz)

PAE vs. Frequency vs. Voltage PAE vs. Frequency vs. Temp.
45 45
PIN = 23 dBm Temp. = 25 °C PIN = 23 dBm
40 40

35 35

30 30
PAE (%)

PAE (%)

25 25
25 V -40 °C
20 28 V 20 25 °C
30 V 85 °C
15 15

10 10
IDQ = 650 mA VD = 28 V, IDQ = 650 mA
5 5
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
0 0
7.0 8.0 9.0 10.0 11.0 12.0 7.0 8.0 9.0 10.0 11.0 12.0
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. B, March 11, 2019 - 3 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Typical Performance – Large Signal (Pulsed)

PAE vs. Input Power vs. Freq. PAE vs. Frequency vs. PIN
45 45
Temp. = 25 °C Temp. = 25 °C
40 40

35 35

30 30
PAE (%)

PAE (%)
25 11 GHz 25 20 dBm
10 GHz 22 dBm
20 20
9 GHz 23 dBm
15 8 GHz 15 25 dBm

10 10
VD = 28 V, IDQ = 650 mA VD = 28 V, IDQ = 650 mA
5 5
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
0 0
0 5 10 15 20 25 7 8 9 10 11 12
Input Power (dBm) Frequency (GHz)

Drain Current vs. Frequency vs. Voltage Gate Current vs. Frequency vs. Voltage
7.0 0.08
PIN = 23 dBm Temp. = 25 °C PIN = 23 dBm Temp. = 25 °C
6.0 0.06

0.04
5.0
Gate Current (A)
Drain Current (A)

0.02
4.0
25 V 0.00
3.0 28 V
30 V
-0.02
2.0 25 V 28 V 30 V
-0.04

1.0 IDQ = 650 mA IDQ = 650 mA

-0.06
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
0.0 -0.08
7.0 8.0 9.0 10.0 11.0 12.0 7.0 8.0 9.0 10.0 11.0 12.0
Frequency (GHz) Frequency (GHz)

Drain Current vs. Frequency vs. Temp. Gate Current vs. Frequency vs. Temp.
7.0 1.0
PIN = 23 dBm PIN = 23 dBm
6.0 0.8

5.0 0.6
Gate Current (mA)
Drain Current (A)

4.0 0.4
-40 °C -40 °C 25 °C 85 °C
3.0 25 °C 0.2
85 °C
2.0 0.0

1.0 VD = 28 V, IDQ = 650 mA -0.2 VD = 28 V, IDQ = 650 mA

Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%

0.0 -0.4
7.0 8.0 9.0 10.0 11.0 12.0 7.0 8.0 9.0 10.0 11.0 12.0
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. B, March 11, 2019 - 4 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Typical Performance – Large Signal (Pulsed)

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq.
7.0 0.25
VD = 28 V, IDQ = 650 mA VD = 28 V, IDQ = 650 mA
6.0 Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
0.20

5.0
0.15

Gate Current (mA)

Drain Current (A)

4.0
0.10
3.0

11 GHz 0.05 8 GHz 9 GHz 10 GHz 11 GHz

2.0
10 GHz
9 GHz 0.00
1.0
8 GHz
Temp. = 25 °C Temp. = 25 °C
0.0 -0.05
0 5 10 15 20 25 0 5 10 15 20 25
Input Power (dBm) Input Power (dBm)

Drain Current vs. Frequency vs. PIN Gate Current vs. Frequency vs. PIN
7.0 0.25
Temp. = 25 °C Temp. = 25 °C VD = 28 V, IDQ = 650 mA
6.0 0.20
Pulsed: PW = 100 µs, DC = 10%
Drain Current (A)

5.0
Gate Current (mA)

0.15
4.0
20 dBm
0.10
20 dBm 22 dBm
3.0 22 dBm 23 dBm
23 dBm 0.05 25 dBm
2.0 25 dBm

1.0 VD = 28 V, IDQ = 650 mA 0.00

Pulsed: PW = 100 µs, DC = 10%

0.0 -0.05
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Power Gain vs. Frequency vs. PIN Power Gain vs. Input Power vs. Freq.
33 36
Temp. = 25 °C Temp. = 25 °C
30
33
27 8 GHz 9 GHz 10 GHz 11 GHz
Power Gain (dB)

24 30
Power Gain (dB)

21
27
18 20 dBm
22 dBm
15 23 dBm 24
25 dBm
12
VD = 28 V, IDQ = 650 mA 21 VD = 28 V, IDQ = 650 mA
9
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%
6 18
7 8 9 10 11 12 0 5 10 15 20 25
Frequency (GHz) Input Power (dBm)

Data Sheet Rev. B, March 11, 2019 - 5 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Performance Plots – Large Signal (Pulsed)

2nd Harmonic vs. Frequency vs. Temp. 2nd Harmonic vs. Frequency vs. Temp.
-10 -10
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%

-15 VD = 28 V, IDQ = 650 mA -15 VD = 28 V, IDQ = 650 mA

PIN = 10 dBm PIN = 15 dBm

2nd Harmonic (dBc)

2nd Harmonic (dBc)

-20 -20

-25 -25

-30 -30
-40 °C -40 °C
25 °C 25 °C
-35 -35
85 °C 85 °C

-40 -40
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

2nd Harmonic vs. Frequency vs. Temp. 2nd Harmonic vs. Frequency vs. Temp.
-10 -10
Pulsed: PW = 100 µs, DC = 10% Pulsed: PW = 100 µs, DC = 10%

-15 VD = 28 V, IDQ = 650 mA -15 VD = 28 V, IDQ = 650 mA

PIN = 20 dBm
2nd Harmonic (dBc)

2nd Harmonic (dBc)

PIN = 25 dBm
-20 -20

-25 -25

-30 -30
-40 °C
-40 °C
-35 25 °C -35 25 °C
85 °C
85 °C
-40 -40
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

2nd Harmonic vs. Frequency vs. PIN

-10
Pulsed: PW = 100 µs, DC = 10%

-15 VD = 28 V, IDQ = 650 mA

Temp. = 25 °C
2nd Harmonic (dBc)

-20

-25

-30
10 dBm
15 dBm
-35
20 dbm
25 dbm
-40
7 8 9 10 11 12
Frequency (GHz)

Data Sheet Rev. B, March 11, 2019 - 6 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Performance Plots – Small Signal (CW)

Gain vs. Frequency vs. VD Gain vs. Frequency vs. IDQ
34 34
Temp = 25 °C Temp = 25 °C
32 32

30 30
S21 (dB)

S21 (dB)
28 28

26 25 V 26
1000 mA
28 V 650 mA
24 30 V 24

22 22
IDQ = 650 mA VD = 28 V

20 20
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Gain vs. Frequency vs. Temp.

40

35

30

25
S21 (dB)

20
-40 °C
15
25 °C

10 85 °C

5
VD = 28 V, IDQ = 650 mA
0
7 8 9 10 11 12
Frequency (GHz)

Input Return Loss vs. Frequency vs. Temp. Output Return Loss vs. Freq. vs. Temp.
0 0
VD = 28 V, IDQ = 650 mA VD = 28 V, IDQ = 650 mA
-3 -3
-6 -6
-9 -9
-12 -12
S22 (dB)
S11 (dB)

-15 -15
-18 -18
-21 -21
-40 °C -40 °C
-24 -24
25 °C 25 °C
-27 85 °C -27 85 °C

-30 -30
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. B, March 11, 2019 - 7 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Performance Plots – Small Signal (CW)

Input Return Loss vs. Frequency vs. VD Output Return Loss vs. Frequency vs. VD
0 0
Temp = 25 °C Temp = 25 °C IDQ = 650 mA
-3 -3
-6 -6
-9 -9
-12 -12
S11 (dB)

S22 (dB)
-15 -15
-18 -18
-21 25 V -21 25 V
28 V
-24 -24 28 V
30 V
30 V
-27 -27
IDQ = 650 mA
-30 -30
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Input Return Loss vs. Frequency vs. IDQ Output Return Loss vs. Frequency vs. IDQ
0 0
Temp = 25 °C Temp = 25 °C VD = 28 V
-3 -3
-6 -6
-9 -9
-12 -12
S11 (dB)

S22 (dB)

-15 -15
-18 -18
-21 1000 mA -21
650 mA 1000 mA
-24 -24
650 mA
-27 VD = 28 V -27
-30 -30
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. B, March 11, 2019 - 8 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1)
VD = 28 V, IDQ = 650 mA, 0.33 ºC/W
Channel Temperature, TCH (No RF) (2) Tbase = 85 °C, PDISS = 18.2 W (Quisecent) 91 ºC

Thermal Resistance (θJC) (1) VD = 28 V, IDQ = 650 mA, 0.52 ºC/W

(Pulsed VD : PW = 100 µs, DC = 10 %),
Tbase = 85 °C, VD = 28 V, ID_Drive = 5.9 A,
Channel Temperature, TCH (Under RF) (2) 141 ºC
PIN = 25 dBm, POUT = 47.5dBm, PDISS = 108 W

Notes:
1. Thermal resistance is referenced to the back of package (85 ºC)

2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Dissipated Power and Maximum Gate Current

IG_MAX vs. TCH
220
200
Maximum Gate Current (mA)

180
160
140
120
100
80
60
40
20
0
125 135 145 155 165 175
Channel Temperature (°C)

PDISS vs. Frequency vs. PIN

120
110 TBASE = +85°C

100
90
80
PDISS (W)

70
60
50
PIN = 23 dBm
40 PIN = 25 dBm
30
20 VD = 28 V, IDQ = 650 mA
10 Pulsed: PW = 100 µs, DC = 10%
0
7 8 9 10 11 12
Frequency (GHz)

Data Sheet Rev. B, March 11, 2019 - 9 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Applications Information and Pin Layout

C5 C3 C1 C7 C9
10 uF 0.1 uF 0.01 uF 0.01 uF 0.1 uF
R3 R1
5.1 Ohms 10 Ohms

RFIN RFOUT
VG VD
(Note 1) (Note 2)

R4 R2
5.1 Ohms 10 Ohms
C6 C4 C2 C8 C10
10 uF 0.1 uF 0.01 uF 0.01 uF 0.1 uF

Notes:
1. VG must be biased from both sides (Pins 1 and 5)
2. VD must be biased from both sides (Pins 6 and 10)

Bias Up Procedure Bias Down Procedure

1. Set ID limit to 7 A, IG limit to 20 mA 1. Turn off RF supply
2. Apply −5 V to VG 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Apply 28 V to VD; ensure IDQ is approx. 0 mA 3. Set VD to 0 V
4. Adjust VG until IDQ = 650 mA (VG ~ −2.6 V Typ.). 4. Turn off VD supply
5. Turn on RF supply 5. Turn off VG supply

Pin Description
Pad No. Symbol Description
Gate Voltage; Bias network is required; must be biased from both sides; see
1,5 VG
recommended Application Information above.
2,4,7,9 GND Must be grounded on the PCB.
3 RFIN Input; matched to 50 Ω; DC blocked
Drain voltage; Bias network is required; must be biased from both sides; see
6,10 VD
recommended Application Information above.
8 RFOUT Output; matched to 50 Ω; DC shorted to ground.

Data Sheet Rev. B, March 11, 2019 - 10 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Evaluation Board (EVB) Assembly Drawing

PCB NOTES:
1. PCB is made from Rogers 4003C dielectric, 0.008 inch thick, 0.5 oz. copper both sides.
2. Both Top and Bottom VD and VG must be biased.

Bill of Materials
Reference Des. Value Description Manuf. Part Number
C1, C2, C7, C8 0.01 uF Cap, 0402, 50 V, 10%, X7R Various –
C3, C4, C9, C10 0.1 μF Cap, 0402, 50 V, 10%, X7R Various –
C5, C6 10 uF Cap, 1206, 50 V, 20%, X5R Various –
R1, R2 10 Ω Res, 0402, 5%, SMD Various –
R3, R4 5.1 Ω Res, 0402, 5%, ROHS Various –
R5, R6 0Ω Res, 0402, SMD, jumpers required for the above EVB Various –

Data Sheet Rev. B, March 11, 2019 - 11 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and
apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:

4. Apply no-flux solder to each pin of the TGA2238-CP. The component leads should be manually soldered, and the
package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after
soldering is recommended.

Data Sheet Rev. B, March 11, 2019 - 12 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Mechanical Information

Units: inches
Tolerances: (unless specified)
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Leads: Alloy 194
Lid: LCP (liquid crystal polymer)
All metalized features are gold plated
Part is epoxy sealed
Marking:
TGA2238-CP: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number (unique for all parts within one assembly lot)
MXXX: Batch ID

Data Sheet Rev. B, March 11, 2019 - 13 of 14 - www.qorvo.com

 TGA2238-CP
8 – 11 GHz 50 W GaN Power Amplifier

Handling Precautions
Parameter Rating Standard
ESD – Human Body Model (HBM) Class 1B JEDEC Standard JESD22 A114 Caution!
ESD – Charge Device Model (CDM) Class C2 JEDEC Standard JESD22-C101F ESD-Sensitive Device
MSL – Moisture Sensitivity Level N/A

Solderability
The component leads should be manually soldered, and the package cannot be subjected to conventional reflow
processes. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 °C.
The use of no-clean solder to avoid washing after soldering is recommended.

RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. B, March 11, 2019 - 14 of 14 - www.qorvo.com