MOSFET TRANSISTOR 1

Mosfet transistor
Valencia Kevin, Estudiante , Universidad de las Fuerzas Armadas ESPE,
Pichucho Kevin, Estudiante , Universidad de las Fuerzas Armadas ESPE

Abstract—The power MOSFET is the device of choice in at least two types of applications: Very high frequency applications, typically
sources in which it is necessary to reduce size, weight and cost of transformers, inductors and capacitors. Applications of low voltage
and high current (up to a few hundred Amperes), in which it is possible to oversize the chip such that the RDS (on) resistance is
very low and UDS voltages can be obtained in the order of one tenth of Volt . These applications can be inverters ”from” or with
very low voltage DC sources (from 12 and 24V batteries for example) or high frequency rectifiers that replace high-speed diodes,
reducing losses (synchronous rectification). The structure of the MOSFET has served as the basis for the development of another
device that has become the component of choice for high voltages and currents, combining the command characteristics of the
MOSFET with the driving characteristics of the BJT. That device is the IGBT (bipolar isolated gate transistor).
Keywords—gain, current, resistance, voltage, emitter, collector, base, frequency, transistor, mosfet.
I. INTRODUCTION nents that comprise them. This chapter describes the operating
principle of the MOSFET, the structure adapted to the power
T he MOSFET (Metal Oxide Semiconductor Field Effect
Transistor) is the Power field effect transistor of MOS
type, base digital signal circuits, which has been modified
management device, its static and dynamic characteristics and
applications is presented. the n-channel device is considered to
for use as quenchable key in power electronics. As the be the most applicable. It starts from a review of the operation
BJT, MOSFET is not inherently bistable, and its use as key of MOSFETs signal and then the power MOSFET is presented
management depends on the command electrode (gate). The with its structure and specific features.
BJT as a key to power electronics has several limitations:
• The switching times are of the order of several mi-
II. MOSFET CHANNEL SIGNAL N
croseconds, mainly in the off, which limits the maximum Figure 1 shows the basic structure of a MOSFET of n-
operating frequency about 20 kHz, decreasing with the channel signal. It is a device lateral structure, particularly
power handled. suitable for digital integrated circuits with millions of inter-
• The control base current, which must also comply with connected basic devices. On a substrate material called p body
the collector current, requires complex circuits using (body) two regions n with metal connections to the outside,
command and significant energy consumption. the source and drain are doped, the contacts between which is
• Driving is performed by diffusion of minority carriers, intended to block voltage or current drive. Among them and
which makes the device present the phenomenon of about the area p an insulating layer (silicon Oxide) is formed
Second Breakdown, which limits safe operating areas. and thereon a conductive layer, the gate electrode is formed or
• The low gain common emitter strongly with increasing command. N region designed to act as a source or reference
reverse voltage. electrode is connected to the body at any point of the structure
The MOSFET is a high speed device because its transit outside the area between source and drain.
between driving and cutting depends on the load capacity
of the order of nF. The speed then depends on the ability III. S TRUCTURE OF A POWER MOSFET’ S
to source current voltage that is an aspect of the trip circuit The described device can function as working key between
design. Driving is based on the movement of majority carriers, locking and linear region; thus it works on logic circuits. Its
eliminating the risk of second Breakdown, and the command high switching speed and simplicity of handling and driving
is performed by applying voltage between the electrode Com- mechanism - based on majority carriers - make it an option to
mand (gate) and one electrode power (source), simplifying overcome the limitations of BJT in power converter circuits.
and making more efficient management. The driving MOSFET However the ”side” of Figure 1 structure presents strong
behaves like a resistor. The conduction losses then depend on limitations in the voltage blocking conduction current and re-
the value of this resistance, which is to minimize working sistance in the linear region that make it inapplicable to power
on the construction characteristics. Power MOSFET is then circuits commonly used. Its use as a key in power electronics
a device that, maintaining the principle of operation of the then requires a completely different structure, which allows
MOSFET signal is modified to handle currents and voltages blocking voltages and driving currents values as those found
block as used in electronic power conversion. Its application in the converters, and resistance at sufficiently low linear zone
is limited to voltage levels corresponding to low-voltage or as to fall driving voltage is acceptable as an approximation
lower (230 Vac or 400 Vac or its rectified values). It is the to a closed wrench. This is achieved with a similar vertical
device of choice in power supplies to some kW for electronic frame to the thyristor or BJT, consisting of a silicon chip of a
systems connected to low voltage services. His speed and few tenths of mm thick in which the current flows from one
comparatively simple operation has enabled the reduction in face to the other, with a structure doping allows functioning
size and cost of such equipment by reducing passive compo- as a MOSFET. The most widespread structure is called V
MOSFET TRANSISTOR
Fig. 1. Signal MOSFET
DMOS (Diffused MOS Vertical). Figure 2 shows a section of
the device with appropriate dopings.
Fig. 2. Cut a power n-channel MOSFET
On one side of the chip it has an n + region with a metal
contact in its entirety, is the drain contact. About the area n
+ is grown zone n - which constitutes the drain itself. The
thickness of this layer determines the voltage that is capable
of blocking the device. On that layer, from the other side of
the chip thousands of regions or cells are diffused p, each
constituting the body of a MOSFET p.
IV. MOSFET’ S MODELS DURING SWITCHING
Transitions between locking and driving MOSFET tran-
siently passes by the active or saturation region. In driving
is a resistor and a diode in reverse lock (approximately).
During transit through the saturation zone it behaves as a
source of voltage dependent current. This behavior influences
the gate voltage during switching. In Figure 3 (Mohan et al.
1995, adapted) models are adopted for different states are
presented.U˙GS
2
Fig. 3. MOSFET models for different areas of operation
V. P OWER DISSIPATION IN A MOSFET’ S
For the design of a converter with MOSFETs it is necessary
to know the heat dissipation of each device in order specifica-
tion dissipative ventilation and overall thermal management.
The MOSFET is a real approximation of an ideal key. This
approach is particularly successful when it relates to switching
speed. Times on and off are on the order of tens of ns,
depending on the control circuit, therefore the same operating
frequency switching heat dissipation is much lower than those
observed removable devices. The MOSFET hitherto has been
the preferred device for power supplies, in which the increase
in the switching frequency allows reducing the size of the
passive components of the power circuits, such as inductors,
capacitors and transformers.
VI. MOSFET’ S APPLICATIONS
The area of application of a device is linked to the
heat dissipation in connection with the power handled by
converter that employs but the degree of approximation to
an ideal device for the application considered key. Both are
naturally linked, but also should be considered separately
in order to assess the degree of approximation to the ideal
case of the models used for the entire system in question.
This assessment arises for a device which applications are
best suited. In the case of MOSFETs the most significant
deviation from the ideal key was from the beginning the
RDS (on) and its dependence on the blocking voltage. The
way to solve the problem has been to use MOSFET’s more
current capacity than needed for an application, accept lower
MOSFET TRANSISTOR
yields, limiting production to devices with voltages lower than
1000V and use blocking devices in parallel when not reached
the necessary currents with reasonable values of RDS (on).
For some years, the development of power semiconductor
devices has changed the application area of the MOSFET
and the character of its limitations. First it has succeeded in
manufacturing new gate geometries such as ”trench gate”
(Figure 4) and ”superjunction”. The manufacturing processes
are much more complex but has reduced RDS (on) until
less than 20Second MOSFET’s manufactured low blocking
voltage and large current capacity, which present support
encapsulates streams much lower.
Fig. 4. MOSFET with source-gate structure type ”trench” or trench
VII. MOSFET’ S IN RADIO FREQUENCY (RF)
APPLICATIONS
For a long time the MOSFET (Metal Oxide Semiconductor
Field Effect Transistor) silicon was considered a slow, noisy
and device suitable for RF applications. But thanks to the
continuous development of the MOSFETs for analog and dig-
ital applications, its performance has improved considerably
in recent years, so this device has found more acceptance in
the community RF To date, the silicon MOSFET has been
widely used for applications in the GHz range below, but
the market for these transistors will increase as technology
advances. Thus, in the last decade the MOSFET has achieved
surprisingly high operating speeds, so that the international
community has begun to regard them as an efficient tool for
analog applications ranges microwave and millimeter wave
alternative. This development of MOSFETs based on contin-
uous reduction of their dimensions, known as scaling process,
thanks to which its dimensions have been reduced from several
microns to current technologies of the order of 65 nanometers.
This continuous reduction of the dimensions of the MOSFETs,
is affected by the occurrence of undesirable phenomena known
as short channel effects (Short Channel Effects SCE-), which
3
involve loss of control electrostatic phenomena from the gate
of transistor. Such effects are a technological challenge which
degrade the operating characteristics of the transistor.
VIII. C ONCLUSIONS
• In conclusion, a high frequency MOSFET transistor is
typically applied for sources in which it is necessary to
reduce the size, weight and cost of transformers, inductors
and capacitors.
• MOSFET transistors have limitations at high working
voltages, close to 1000V.
• It can be seen that the MOSFETs have served as the basis
for the development of another device that has become
the component of choice for high voltages and currents,
combining the characteristics with the conduction of the
BJT.
• The MOSFET thanks to his big speed of conmutation
presents a big versatilidad of work; This can replace
devices like the jfet.
• For a current to flow in a N-channel MOSFET, a positive
voltage must be applied to the gate. Thus the electrons
of the N channel of the source (source) and the drain
(Drain) are attracted to the gate (Gate) and pass through
the P channel between them.
R EFERENCES
[1] D. Schilling and C. Belove, Circuitos electronicos: discretos e integrados,
3rd ed. McGraw-Hill, USA,1994.
[2] B.Williams (2006). Power Electronics: Devices, Drivers, Applications,
and Passive Components, University of Strathclyde, Glasgow - UK.
[3] International Rectifier (Technical Library). www.irf.com.
[4] Maxim Integrated Products (Designers Information and Design Tools).
www.maxim-ic.com.
[5] Mohan, N., Underland, T. & Robbins, W. (1995). Power Electronics -
Converters, Applications and Design, John Wiley & Sons, Inc.
[6] Vishay Intertechnology Inc. (Datasheets). www.vishay.com.