PD- 95286

SMPS MOSFET IRF7469PbF

HEXFET® Power MOSFET
Applications
VDSS RDS(on) max(mW) ID
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification 40V 17@VGS = 10V 9.0A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power A
A
1 8
S D
l Lead-Free
2 7
S D

3 6
S D
Benefits
4 5
l Ultra-Low Gate Impedance G D

l Very Low RDS(on) SO-8

Top View
l Fully Characterized Avalanche Voltage
and Current

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.3 A
IDM Pulsed Drain Current 73
PD @TA = 25°C Maximum Power Dissipationƒ 2.5 W
PD @TA = 70°C Maximum Power Dissipationƒ 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient „ ––– 50 °C/W

Notes  through „ are on page 8

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 12 17 VGS = 10V, ID = 9.0A ƒ
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 15.5 21 VGS = 4.5V, ID = 7.2A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 VDS = 32V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 ––– ––– S VDS = 20V, ID = 7.2A
Qg Total Gate Charge ––– 15 23 ID = 7.2A
Qgs Gate-to-Source Charge ––– 7.0 11 nC VDS = 20V
Qgd Gate-to-Drain ("Miller") Charge ––– 5.0 8.0 VGS = 4.5V ƒ
Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 16V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 20V
tr Rise Time ––– 2.2 ––– ID = 7.2A
ns
td(off) Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω
tf Fall Time ––– 3.5 ––– VGS = 4.5V ƒ
Ciss Input Capacitance ––– 2000 ––– VGS = 0V
Coss Output Capacitance ––– 480 ––– VDS = 20V
Crss Reverse Transfer Capacitance ––– 28 ––– pF ƒ = 1.0MHz

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 210 mJ
IAR Avalanche Current ––– 7.2 A

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 2.3
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 73
(Body Diode)  p-n junction diode. S

––– 0.80 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V ƒ

VSD Diode Forward Voltage
––– 0.65 ––– TJ = 125°C, IS = 7.2A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 7.2A, VR=15V
Qrr Reverse Recovery Charge ––– 91 140 nC di/dt = 100A/µs ƒ
trr Reverse Recovery Time ––– 77 120 ns TJ = 125°C, IF = 7.2A, VR=20V
Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs ƒ
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100 VGS
100
VGS
TOP 10V TOP 10V
8.0V 8.0V
7.0V

I D , Drain-to-Source Current (A)

7.0V
I D , Drain-to-Source Current (A)

5.0V 5.0V
4.5V 4.5V
4.0V 4.0V
3.7V 3.7V
BOTTOM 3.5V BOTTOM 3.5V

3.5V

3.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
10 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = 9.0A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.0

TJ = 150 ° C
(Normalized)

1.5

TJ = 25 ° C 1.0

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
10 0.0
3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7469PbF

100000 10
VGS = 0V, f = 1 MHZ ID = 7.2A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 32V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd VDS = 20V
8
10000 Coss = Cds + Cgd
C, Capacitance(pF)

Ciss 6

1000
Coss
4

100
Crss 2

10
0
1 10 100 0 5 10 15 20 25 30

VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 150 ° C
I D , Drain Current (A)

10 100
10us

TJ = 25 ° C 100us

1 10
1ms

TA = 25 ° C
TJ = 150 ° C 10ms
V GS = 0 V Single Pulse
0.1 1
0.4 0.8 1.2 1.6 2.0 0.1 1 10 100
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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10.0
RD
VDS

8.0 VGS
D.U.T.
ID , Drain Current (A)

RG
+
-V DD
6.0
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0

Fig 10a. Switching Time Test Circuit

2.0
VDS
90%
0.0
25 50 75 100 125 150
TC , Case Temperature ( °C)

10%
VGS
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response (Z thJA )

10 0.20
0.10
0.05

0.02
1
0.01
PDM

t1
SINGLE PULSE
0.1 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7469PbF

RDS(on) , Drain-to -Source On Resistance (Ω)

0.03 0.03
RDS (on) , Drain-to-Source On Resistance (Ω)

VGS = 4.5V
0.02 0.02
ID = 9.0A

VGS = 10V

0.01 0.01

0 20 40 60 80 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.

QG
50KΩ VGS
12V .2µF
.3µF QGS QGD
+
V
500
- DS ID
EAS , Single Pulse Avalanche Energy (mJ)

D.U.T.
VG
VGS TOP 3.2A
3mA Charge
5.8A
400 BOTTOM 7.2A
IG ID
Current Sampling Resistors

300
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
200

15V

100
V(BR)DSS
tp L DRIVER
VDS

RG D.U.T +
V
0
- DD 25 50 75 100 125 150
IAS A
20V
tp 0.01Ω Starting TJ , Junction Temperature ( °C)
I AS

Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum Avalanche Energy
and Waveforms Vs. Drain Current
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHE S MILLIMETERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.

3X 1.27 [.050]
8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F7101 A = AS S EMBLY S IT E CODE
RECT IFIER LOT CODE
LOGO
PART NUMBER

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IRF7469PbF
SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
‚ Starting TJ = 25°C, L = 8.1mH „ When mounted on 1 inch square copper board.
RG = 25Ω, IAS = 7.2A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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