IRFD110, SiHFD110

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
Available
• Repetitive Avalanche Rated
RDS(on) () VGS = 10 V 0.54
• For Automatic Insertion RoHS*
Qg (Max.) (nC) 8.3 COMPLIANT
Qgs (nC) 2.3 • End Stackable
Qgd (nC) 3.8 • 175 °C Operating Temperature
Configuration Single • Fast Switching and Ease of Paralleling
D • Compliant to RoHS Directive 2002/95/EC

HVMDIP DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G ruggedized device design, low on-resistance and
S cost-effectiveness.
G The 4 pin DIP package is a low cost machine-insertable
D S case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
N-Channel MOSFET
link to the mounting surface for power dissipation levels up
to 1 W.

ORDERING INFORMATION
Package HVMDIP
IRFD110PbF
Lead (Pb)-free
SiHFD110-E3
IRFD110
SnPb
SiHFD110

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 1.0
Continuous Drain Current VGS at 10 V ID
TA = 100 °C 0.71 A
Pulsed Drain Currenta IDM 8.0
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energyb EAS 140 mJ
Repetitive Avalanche Currenta IAR 1.0 A
Repetitive Avalanche Energya EAR 0.13 mJ
Maximum Power Dissipation TA = 25 °C PD 1.3 W
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 2.0 A (see fig. 12).
c. ISD  5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91127 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 1
IRFD110, SiHFD110
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 100 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.60 Ab - - 0.54 
Forward Transconductance gfs VDS = 50 V, ID = 0.60 Ab 0.80 - - S
Dynamic
Input Capacitance Ciss - 180 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 81 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 15 -
Total Gate Charge Qg - - 8.3
ID = 5.6 A, VDS = 80 V,
Gate-Source Charge Qgs VGS = 10 V - - 2.3 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 3.8
Turn-On Delay Time td(on) - 6.9 -
Rise Time tr - 16 -
VDD = 50 V, ID = 5.6 A, ns
Turn-Off Delay Time td(off) Rg = 24 , RD = 8.4 , see fig. 10b - 15 -
Fall Time tf - 9.4 -
Between lead, D
Internal Drain Inductance LD - 4.0 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 6.0 -
S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 1.0
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S
- - 8.0

Body Diode Voltage VSD TJ = 25 °C, IS = 1.0 A, VGS = 0 Vb - - 2.5 V

Body Diode Reverse Recovery Time trr - 100 200 ns
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91127

2 S10-2466-Rev. C, 25-Oct-10
 IRFD110, SiHFD110
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS
101
Top 15 V
101 10 V 25 °C
8.0 V
ID, Drain Current (A)

7.0 V

ID, Drain Current (A)

6.0 V 175 °C
5.5 V
5.0 V
Bottom 4.5 V
100
100

4.5 V

20 µs Pulse Width 20 µs Pulse Width

TA = 25 °C 10-1 VDS = 50 V
10-1 100 101 4 5 6 7 8 9 10
91127_01 VDS, Drain-to-Source Voltage (V) 91127_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TA = 25 °C Fig. 3 - Typical Transfer Characteristics

VGS 3.0
RDS(on), Drain-to-Source On Resistance

101 Top ID = 5.6 A

15 V
VGS = 10 V
10 V
2.5
8.0 V
ID, Drain Current (A)

7.0 V
6.0 V 2.0
(Normalized)

5.5 V
5.0 V
100 Bottom 4.5 V 4.5 V 1.5

1.0

20 µs Pulse Width 0.5

TA = 175 °C
0.0
10-1 100 101
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
91127_02 VDS, Drain-to-Source Voltage (V)
91127_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TA = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91127 www.vishay.com

S10-2466-Rev. C, 25-Oct-10 3
IRFD110, SiHFD110
Vishay Siliconix

400
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted

ISD, Reverse Drain Current (A)

Crss = Cgd 175 °C
320
Coss = Cds + Cgd
Capacitance (pF)

240 100
Ciss 25 °C

160 Coss

80
10-1
Crss
VGS = 0 V
0
100 101 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

91127_05 VDS, Drain-to-Source Voltage (V) 91127_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 102
ID = 5.6 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)

5 by RDS(on)
VDS = 80 V
16
VDS = 50 V 2
ID, Drain Current (A)

VDS = 20 V 10
12 10 µs
5 100 µs

2
8 1 ms
1
5 10 ms
4
TA = 25 °C
For test circuit 2 TJ = 175 °C
see figure 13 Single Pulse
0 0.1 2 5 2 5 2 5 2 5
0 2 4 6 8 10 0.1 1 10 102 103
91127_06 QG, Total Gate Charge (nC) 91127_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91127

4 S10-2466-Rev. C, 25-Oct-10
 IRFD110, SiHFD110
Vishay Siliconix

RD
VDS

1.0 VGS
D.U.T.
Rg
+
0.8 - VDD
ID, Drain Current (A)

10 V
0.6 Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

0.4 Fig. 10a - Switching Time Test Circuit

0.2
VDS
90 %
0.0
25 50 75 100 125 150 175

91127_09 TA, Ambient Temperature (°C)

10 %
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Ambient Temperature Fig. 10b - Switching Time Waveforms

103
Thermal Response (ZthJA)

102
0 - 0.5
0.2
10 0.1
0.05
0.02 PDM
1 0.01
t1
Single Pulse t2
0.1 (Thermal Response) Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10 102 103

91127_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Document Number: 91127 www.vishay.com

S10-2466-Rev. C, 25-Oct-10 5
IRFD110, SiHFD110
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
Rg D.U.T. +
V DD
- VDS
I AS
10 V
tp 0.01 W
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

350
ID
EAS, Single Pulse Energy (mJ)

Top 0.82 A
300
1.4 A
Bottom 2.0 A
250

200

150

100

50
VDD = 25 V
0
25 50 75 100 125 150 175

91127_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91127

6 S10-2466-Rev. C, 25-Oct-10
 IRFD110, SiHFD110
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91127.

Document Number: 91127 www.vishay.com

S10-2466-Rev. C, 25-Oct-10 7
 Package Information
Vishay Siliconix

HVM DIP (High voltage)

0.248 [6.29]
0.240 [6.10]

0.043 [1.09] 0.197 [5.00]

0.035 [0.89] 0.133 [3.37] 0.189 [4.80]
0.125 [3.18]

0.180 [4.57]
0.160 [4.06]

0.094 [2.38]
A L
0.086 [2.18]
0.160 [4.06]
0.140 [3.56]

0° to 15°
0.017 [0.43] 2x 0.045 [1.14]
0.013 [0.33] 2 x 0.035 [0.89]
0.024 [0.60]
E min. 4x
0.020 [0.51]
0.100 [2.54] typ.
E max.

INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.310 0.330 7.87 8.38
E 0.300 0.425 7.62 10.79
L 0.270 0.290 6.86 7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.

Document Number: 91361 www.vishay.com

Revision: 06-Sep-10 1
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12 1 Document Number: 91000