polymers

Article
A Quinacridone-Diphenylquinoxaline-Based
Copolymer for Organic Field-Effect Transistors
Yong Jin Jeong 1 , Jeong Hyun Oh 2 , Ho Jun Song 3, * and Tae Kyu An 2,4, *
1 Department of Materials Science and Engineering, Korea National University of Transportation,
Chungju 27469, Korea; il5range@gmail.com
2 Department of Polymer Science & Engineering, Korea National University of Transportation,
Chungju 27469, Korea; i0055735@naver.com
3 Research Institute of Sustainable Manufacturing System Intelligent Sustainable Materials R&D Group,
Korea Institute of Industrial Technology, Chungcheongnam-do 31056, Korea
4 Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Korea
* Correspondence: song3026@kitech.re.kr (H.J.S.); taekyu1985@ut.ac.kr (T.K.A.)




Received: 2 March 2019; Accepted: 22 March 2019; Published: 26 March 2019


Abstract: In this work, we characterized poly(quinacridone-diphenylquinoxaline) (PQCTQx).

PQCTQx was synthesized by a Suzuki coupling reaction and the synthesized PQCTQx was used as a
polymeric semiconducting material in organic field-effect transistors (OFETs) to research the potential
of using quinacridone derivatives. The measured field-effect mobility of the pristine PQCTQx
film was 6.1 × 10−3 cm2 /(V·s). A PQCTQx film heat-treated at 150 ◦ C exhibited good field-effect
performances with a hole mobility of 1.2 × 10−2 cm2 /(V·s). The improved OFET behaviors resulting
from the mild thermal treatment was attributed to improved packing of the molecules in the film,
as determined using X-ray diffraction, and to decreased channel resistance.

Keywords: organic field-effect transistor (OFET); organic semiconductor; quinacridone; thermal

annealing; channel resistance; polymeric semiconductor

1. Introduction
Research into organic field-effect transistors (OFETs) has been committed to the advancement
of organic semiconducting materials and device engineering technologies in the last decades [1–5].
Current investigations of OFETs are aiming to rapidly meet the rising demand for large-area or flexible
sensors and displays, and driving elements for RF identification tags, as well as many other lower-cost
functional devices [6,7]. While OFETs generally work best in applications that do not typically
need high-performance semiconducting materials, such as single crystalline and polycrystalline
silicon, high field-effect mobility and good device-to-device reproducibility (which rely partially
upon the structural consistency of the OFET film) are nonetheless significant even for inexpensive
electronic circuits now that the numerous transistors in these devices have to function all together [8].
To enhance OFET performance, one of the most important considerations is developing molecular
design strategies aimed at enhancing the packing of the molecules in the OFET. For this purpose,
various organic semiconductors have been synthesized and analyzed. The greatest advantage of using
organic molecules as semiconductors is that it is easy to make planar conjugated structures out of these
molecules, and such structures strongly form π-π interactions and bring about fast charge transport [9].
Polymeric semiconductors, in particular, show superior mechanical flexibility and are amenable
to solution processes for large areas in forming a uniform film morphology, and are hence regarded as
promising candidates for active semiconducting materials in OFETs [10]. Various kinds of polymeric
semiconductors have been developed, but quinacridone (QC)-based polymers have drawn particularly

Polymers 2019, 11, 563; doi:10.3390/polym11030563 www.mdpi.com/journal/polymers

Polymers 2019, 11, 563 2 of 7
Polymers 2018, 10, x FOR PEER REVIEW 2 of 7

significant
particularlyattention
significantfor attention
use in organic
for useelectronic devices,
in organic because
electronic these because
devices, polymers havepolymers
these a well-ordering
have a
structure and are able to self-assemble [11]. The quinacridone moiety
well-ordering structure and are able to self-assemble [11]. The quinacridone moiety has been widely has been widely studied
as electron-withdrawing
studied as electron-withdrawing units and unitsred-violet pigments
and red-violet in donor-acceptor
pigments in donor-acceptor(D-A) copolymers
(D-A) copolymers for
organic solar cells and light-emitting diodes [12]. The application of a quinacridone-based
for organic solar cells and light-emitting diodes [12]. The application of a quinacridone-based polymer in
light-emitting diodes was first reported by the Wang group
polymer in light-emitting diodes was first reported by the Wang group [13]. [13].
Copolymers, includingincluding quinacridone
quinacridone units,units, may may be be promising candidates for using
semiconducting materials
materials in OFETs now that the quinacridone unit has a planar and simple
molecular structure that can easily participate in π-π π-π interactions, and hence lead to efficient charge
transport. The
TheFu Fugroup
groupreported
reportedthe theOFET
OFET performance
performance of of quinacridone–benzothiadiazole-based
quinacridone–benzothiadiazole-based D-
D-A copolymers and showed their hole mobility values in each case to be 0.3 cm 2 /(V·s) [12].
A copolymers and showed their hole mobility values in each case to be 0.3 cm /(V·s) [12]. Recently, 2

Recently,
our group ouralso
groupreported
also reported
the use the use
of ofpoly[quinacridone-alt-quaterthiophene]
poly[quinacridone-alt-quaterthiophene](PQCQT) (PQCQT) and
poly(quinacridone-quinoxaline) (PQCQx) as channel materials
poly(quinacridone-quinoxaline) (PQCQx) as channel materials in OFETs with hole mobilitiesin OFETs with hole mobilities
of 2.0of×
2.0 × 10 −2 and 1.4 × 10 −3 cm2 /(V·s) when using PQCQT and PQCQx [14,15]. As the field of
10 and 1.4 × 10 cm /(V·s) when using PQCQT and PQCQx [14,15]. As the field of developing
−2 −3 2

developing quinacridone–based
quinacridone–based D-A copolymer D-Asemiconductors
copolymer semiconductors
have progressed, haveitprogressed,
is necessaryittoisinvestigate
necessary
to investigate thermal stability of the quinacridone-based D-A polymer
thermal stability of the quinacridone-based D-A polymer crystals and the effect of thermal annealingcrystals and the effect of
thermal
process annealing
on the lateral process
chargeon the lateral charge
transports transports
that can that canfrom
be evaluated be evaluated from the
the field-effect field-effect
mobility and
mobility and channel
channel resistance resistance
in the OFETs.in the OFETs.
In this
this work,
work, we we characterized
characterized poly(quinacridone-diphenylquinoxaline)
poly(quinacridone-diphenylquinoxaline) (PQCTQx), whose
structure
structure isis shown
shownin inFigure
Figure1,1,for forapplications
applicationsininOFETs.
OFETs. Although
Although PQCTQx
PQCTQx hashasbeen investigated
been investigated by
the Moon group for employment in organic solar cells [16], it has
by the Moon group for employment in organic solar cells [16], it has not, to the best of not, to the best of our knowledge,
been applied to a semiconducting
semiconducting material in OFETs. OFETs. The PQCTQx OFET device exhibited exhibited p-type
performance of hole mobility values of 6.5 × 10−3−3cm
× 10 cm 2 /(V·s) and 1.3 ×−210−22 cm2 /(V·s), resulting
2/(V·s) and 1.3 × 10 cm /(V·s), resulting from
from pristine
pristine and and thermally
thermally heat-treated
heat-treated PQCTQx
PQCTQx films,
films, respectively.The
respectively. Thedifferent
different OFET
OFET behaviors
resulting
resulting from the pristine and heat-treated PQCTQx films we prepared were explained by the results
of X-ray diffraction (XRD) and channel channel resistance
resistance experiments.
experiments.

Figure 1. Molecular structure of PQCTQx.

2. Experimental
2. Experimental
2.1. Materials, Device Fabrication
2.1. Materials, Device Fabrication
The PQCTQx was synthesized by a Suzuki coupling reaction, as reported formerly [16] (shown
The PQCTQx was synthesized by a Suzuki coupling reaction, as reported formerly [16] (shown
as Scheme 1). The synthesized PQCTQx polymer was found to have a number-average molecular
as Scheme 1). The synthesized PQCTQx polymer was found to have a number-average molecular
weight (Mn ) of 85.0 kg/mol, and a polydispersity index (PDI) of 7.17, by employing gel permeation
weight (Mn) of 85.0 kg/mol, and a polydispersity index (PDI) of 7.17, by employing gel permeation
chromatography method with tetrahydrofuran at 40 ◦ C. The solution-processed PQCTQx film’s
chromatography method with tetrahydrofuran at 40 °C. The solution-processed PQCTQx film’s
electrical properties were investigated with the film in a top-contact/bottom-gate OFET configuration
electrical properties were investigated with the film in a top-contact/bottom-gate OFET configuration
by using a 300-nm-thick SiO2 dielectric on an extremely doped n-Si substrate, which functioned as the
by using a 300-nm-thick SiO2 dielectric on an extremely doped n-Si substrate, which functioned as
gate electrode. The SiO2 dielectric was treated with an octadecyltrichlorosilane (ODTS) monolayer
the gate electrode. The SiO2 dielectric was treated with an octadecyltrichlorosilane (ODTS) monolayer
in the toluene solution for 90 min at room temperature. Solutions of the PQCTQx were made at a
in the toluene solution for 90 min at room temperature. Solutions of the PQCTQx were made at a
concentration of 0.2 wt % in chloroform and heated at 50 ◦ C for 30 min, and then filtered by using a
concentration of 0.2 wt % in chloroform and heated at 50 °C for 30 min, and then filtered by using a
0.2-µm-pore-sized polytetrafluoroethylene membrane syringe filter. The polymer film was formed by
0.2-µm-pore-sized polytetrafluoroethylene membrane syringe filter. The polymer film was formed
conducting the spin coating method for 60 s at 2000 rpm. On top of the semiconductor layers (100 nm),
by conducting the spin coating method for 60 s at 2000 rpm. On top of the semiconductor layers (100
gold source were deposited and electrodes were drained by using a patterned tungsten shadow mask
nm), gold source were deposited and electrodes were drained by using a patterned tungsten shadow
mask over the PQCTQx layer. When measured, the channel length (L) and width (W) were 50 µm
Polymers 2019, 11, 563 3 of 7

over the2018,
Polymers PQCTQx
10, x FORlayer. When measured, the channel length (L) and width (W) were 50 µm3 and
PEER REVIEW of 7
1000 µm, respectively. The OFET devices were heat-treated at 150 and 200 ◦ C for 10 min. At this time,
andheat
the 1000treatment
µm, respectively.
proceededThe OFET
under devices were
a nitrogen heat-treated at 150 and 200 °C for 10 min. At this
atmosphere.
time, the heat treatment proceeded under a nitrogen atmosphere.
C10H21 C10H21 C10H21

O O C8H17 O C8H17 O O C8H17

H
N N Br N B N
O

N O
N N Br N B
H C8H17 O
O C8H17 O C8H17 O O
C10H21 C10H21 C10H21 M1

S
N N
N N N N
N N Br
Br Br S S
Br Br
C8H17O OC8H17 S Br S
C8H17O OC8H17 C8H17O OC8H17
C8H17O OC8H17
M2

C10H21 C8H17
O O C8H17 O C10H21
Toluene, K2CO3
B N Pd(PPh3)4 Aliquat336 N
O N N N
N
O Br S Bromothiophene S
N B N
C8H17 O O S Br C10H21 O S

C8H17O OC8H17 C8H17O OC8H17

C10H21 C8H17
M1 M2 PQCTQx
Scheme 1. Synthetic route for producing PQCTQx.
Scheme 1. Synthetic route for producing PQCTQx.
2.2. Electrical Characterization of the OFET Devices
2.2. Electrical Characterization of the OFET Devices
Under a nitrogen atmosphere, PQCTQx OFET devices were analyzed by a Keithley 4200 SCS
(Keithley
UnderInstruments,
a nitrogen Cleveland,
atmosphere, USA) at room
PQCTQx temperature.
OFET devices wereField-effect
analyzed mobilities were calculated
by a Keithley 4200 SCS
in the saturation
(Keithley regime
Instruments, from the slope
Cleveland, USA) of
at aroom
line temperature.
fitting a plot of the square
Field-effect root of the
mobilities source–drain
were calculated
current (IDS ) versus
in the saturation regimethe from
gate voltage
the slope(VofG );a line
the line fitting
fitting a plotwas obtained
of the squarefrom thethe
root of equation IDS =
source–drain
(WC /2L)µ(V − V ) 2 , where C is the capacitance per unit area of the dielectric (10 nF/cm2 ), µ is the
current
i (IDS) Gversusth the gate voltage i (VG); the line fitting was obtained from the equation IDS =
filed-effect
(WCi/2L)μ(V mobility,
G − Vth)2,and
whereVth is
Ci the threshold
is the voltage.
capacitance per The
unittotal
areawidth-normalized
of the dielectric (10channel
nF/cmresistances
2), μ is the

(R total W) were
filed-effect obtained
mobility, andfrom Vth isthe
theinverse slope
threshold of the IThe
voltage. DS -V D curves
total in the linear regime
width-normalized using
channel output
resistances
characteristics. We measured
(RtotalW) were obtained from theRtotal W using
inverse the of
slope output curves
the IDS with V
-VD curves of −
inGthe 80 V regime
linear applied.using output
characteristics. We measured RtotalW using the output curves with VG of −80 V applied.
2.3. Morphological Characterization
2.3. Morphological
XRD experimentsCharacterization
were conducted by X-rays with an energy level of 11.57 keV at the 5A
beamline
XRDof the Pohangwere
experiments Accelerator Laboratory
conducted by X-rays(PAL), Pohang,
with an energyKorea. For
level of XRD
11.57 studies,
keV at the the thin-film
5A beamline
samples were prepared by spin coating method at 2000 rpm with the 0.2% chloroform
of the Pohang Accelerator Laboratory (PAL), Pohang, Korea. For XRD studies, the thin-film samples solution on
an ODTS-treated Si wafer to copy the OFET device making process. To confirm the effect
were prepared by spin coating method at 2000 rpm with the 0.2% chloroform solution on an ODTS- of thermal
annealing, the some of the ◦ C.
treated Si wafer to copy thedeposited filmsmaking
OFET device were heat treated
process. Toat 150 and
confirm 200
the effect of thermal annealing,
the some of the deposited films were heat treated at 150 and 200 °C.
3. Results and Discussion
3. Results and Discussion
The transfer characteristics of the prepared PQCTQx-based OFETs are shown in Figure 2.
The devices exhibited the formal p-channel transfer characteristics and the heat treatments enhanced
The transfer characteristics of the prepared PQCTQx-based OFETs are shown in Figure 2. The
the field-effect mobility (Table 1). The saturation field-effect mobility of the pristine PQCTQx film was
devices exhibited the formal p-channel transfer characteristics and the heat treatments enhanced the
−3 cm2 /(V·s) with an on/off
extracted from the
field-effect mobility slope of the matched plot in Figure 2 to be 6.1 × 10
(Table 1). The saturation field-effect mobility of the pristine PQCTQx film was
ratio × 10
of 1.7from 5 . For the heat-treated film at 150 ◦ C, the field-effect mobility was greater, with a
extracted the slope of the matched plot in Figure 2 to be 6.1 × 10−3 cm2/(V·s) with an on/off ratio
−2 cm2 /(V·s), and with an on/off ratio of 3.0 × 105 . The mobility value decreased,
value of 1.25 × 10
of 1.7 × 10 . For the heat-treated film at 150 °C, the field-effect mobility was greater, with a value of
however, when
1.2 × 10−2 cm the temperature
2/(V·s), and with an of heatratio
on/off treatment
of 3.0 was
× 10 5.increasingly
The mobilityraised
valueby 50 ◦ C; in the
decreased, heat-treated
however, when
film at 200 ◦ C, the field-effect mobility was indicated to be 6.0 × 10−3 cm2 /(V·s) with an on/off ratio
the temperature of heat treatment was increasingly raised by 50 °C; in the heat-treated film at 200 °C,
of
the5.1 × 104 . These
field-effect different
mobility OFET behaviors
was indicated to be 6.0may have
× 10−3 cm2been
/(V·s)due
withtoanstructural differences
on/off ratio of 5.1 × 10between
4. These

different OFET behaviors may have been due to structural differences between the as-cast and heat-
treated films shown by the XRD analysis and channel resistance measurements described below.
Polymers 2019, 11, 563 4 of 7

the as-cast and heat-treated films shown by the XRD analysis and channel resistance measurements
Polymers 2018, 10, x FOR PEER REVIEW 4 of 7
described below.

(a) 0.002 (b)

Annealing Temp.
Fresh -6 0.0 VG =0 V, -20 V VG =0 V, -20 V VG =0 V, -20 V

150 °C
10 -40 V
-40 V
200 °C
(A)

-0.5 -40 V

|ID| (A)
ID (μA)
-8 -60 V
10
1/2

0.001 -60 V
|ID|

-1.0 -80 V -60 V -80 V

-10
10 -1.5
O O
VD = -80 V Fresh -80 V 150 C 200 C
0.000 -12
10 -2.0
-80 -60 -40 -20 0 20 -80 -60 -40 -20 0 -80 -60 -40 -20 0 -80 -60 -40 -20 0
VG (V) VD (V) VD (V) VD (V)

Figure 2.2. (a)

Figure (a) Transfer
Transfer characteristics and (b)
characteristics and (b) output
output characteristics
characteristicsofofthe
theOFETs
OFETswith
withpristine
pristineand
and
annealed PQCTQx films.
annealed PQCTQx films.
Table 1. Performance measures of various OFETs with different PQCTQx films.
Table 1. Performance measures of various OFETs with different PQCTQx films.
PQCTQx film Mobility (cm2 /Vs)
2
On/off Vth (V) Rtotal W (MΩcm)
PQCTQx film Mobility (cm /Vs) On/off Vth (V) RtotalW (MΩcm)
As-cast 6.1 × 10−3 1.7 × 105 −9.2 21.5
As-castat 150 ◦ C
Annealed 1.26.1
× ×1010
−2−3 3.0 ×1.7
10×6 10 −6.3−9.2
5
16.721.5
Annealed at 150
Annealed °C◦ C
at 200 1.2 ×
6.0 × 10 10
− −2
3 3.0
5.1 × 10 ×4 10 6
−6.1−6.3 25.616.7
Annealed at 200 °C 6.0 × 10 −3 5.1 × 10 4 −6.1 25.6

We investigated the molecular-level structures of the PQCTQx films by using XRD. As shown
We investigated the molecular-level structures of the PQCTQx films by using XRD. As shown
in Figure 3a, the pristine PQCTQx film showed a weak (010) peak, in the out-of-plane direction of
in Figure 3a, the pristine PQCTQx film showed a weak (010) peak, in the out-of-plane direction of the
the film,
film, andandthisthis
peakpeak
was was attributed
attributed to molecular
to molecular stacking
stacking of π-πofinteraction.
π-π interaction. After
After heat heat treating
treating at 150
at 150 ◦ C, the intensity of the (010) peak increased, and indicated a π-π distance of 4.0 Å. The XRD
°C, the intensity of the (010) peak increased, and indicated a π-π distance of 4.0 Å. The XRD pattern
pattern
in Figure in Figure 3b revealed
3b revealed that thethat the diffraction
diffraction peaks seemed
peaks seemed to appear to appear
along the along the in-plane
in-plane directiondirection
of the
of the pristine film, though they were not clear. After annealing at 150 ◦ C, (100) and (010) peaks were
pristine film, though they were not clear. After annealing at 150 °C, (100) and (010) peaks were
observed corresponding to a d-spacing of 23.6 Å, showing a face-on interchain
observed corresponding to a d-spacing of 23.6 Å, showing a face-on interchain ordering. Although ordering. Although
an
anedge-on
edge-on structure
structure would
would be be expected
expected to to promote
promote faster
fastercarrier
carriertransport
transportalongalongthetheπ-π stacking
π-πstacking
path
path in the OFET structure than would a face-on structure, a face-on structure is more suitablethan
in the OFET structure than would a face-on structure, a face-on structure is more suitable thanan
amorphous structure [17]. Previous work in our group has investigated
an amorphous structure [17]. Previous work in our group has investigated PQCQT as the active PQCQT as the active material
in OFET devices
material in OFET [14].
devicesA comparison of the crystalline
[14]. A comparison structures
of the crystalline of PQCQT
structures of PQCQT and and
PQCTQx
PQCTQx in film
in
state revealed that the crystalline structure of PQCTQx was not as good
film state revealed that the crystalline structure of PQCTQx was not as good as that of PQCQT foras that of PQCQT for charge
transport in OFET in
charge transport devices
OFET[17,18].
devicesBecause
[17,18].the diphenylquinoxaline
Because unit in PQCTQx
the diphenylquinoxaline unit inis in bulky groups
PQCTQx is in
and
bulkygenerates
groups steric hindrance,
and generates edge-on
steric arrangement
hindrance, edge-onmay become difficult
arrangement may become [19,20]. Increasing
difficult the
[19,20].
annealing temperature by an additional 50 ◦ C yielded decreased intensities of the observed peaks along
Increasing the annealing temperature by an additional 50 °C yielded decreased intensities of the
both (100) peaks
observed and (010)
alongdirections.
both (100) The
andrelatively high intensities
(010) directions. of the PQCTQx
The relatively XRD peaks
high intensities of thesubjected
PQCTQxto
thermal
XRD peaks annealing at 150
subjected to ◦thermal
C suggested that this
annealing PQCTQx
at 150 film wasthat
°C suggested highly
thiscrystalline.
PQCTQx film The considerably
was highly
crystalline
crystalline.structure of PQCTQx
The considerably apparently
crystalline induced,
structure of as described
PQCTQx above, favorable
apparently induced,intermolecular
as described
self-assembled
above, favorable interactions
intermolecularand efficient charge carrier
self-assembled transport
interactions in the PQCTQx
and efficient OFETs.transport in
charge carrier
the PQCTQx OFETs. data were also collected for the various OFET devices. The channel resistances
Channel resistance
(Rtotal W) were obtained from the inverse slope of the output curves in the linear regime at VG = −80 V.
As shown in Figure 4, the channel resistance value resulting from the as-cast PQCTQx film was
measured to be 21.5 MΩcm, and the values resulting from the films annealed at 150 ◦ C and 200 ◦ C were
measured to be 16.7 MΩcm and 25.6 MΩcm, respectively. The relatively low channel resistance value
resulting from the film heat treated at 150 ◦ C led to the better field-effect mobility in its device [21,22].
 fresh fresh
150 °C 150 °C

Intensity(a.u.)
200 °C

(a. u.)
200 °C

Polymers 2018,
Polymers 2019, 11,
10, 563
x FOR PEER REVIEW (100) 55of
of 77

Intensity
(010) (010)
(a) (b)
fresh fresh
150 °C 150 °C
0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5

Intensity(a.u.)
200 °C

(a. u.)
200 °C
q (1/Å) q (1/Å)
(100)
Intensity
Figure 3. (a) Out-of-plane and (b) in-plane XRD patterns of the PQCTQx films.
(010) (010)
Channel resistance data were also collected for the various OFET devices. The channel
resistances (RtotalW) were obtained from the inverse slope of the output curves in the linear regime at
VG = −80 V. As shown in Figure 4, the channel resistance value resulting from the as-cast PQCTQx
film was measured to be 21.5 0.0 MΩcm,
0.5 1.0 and
1.5 the
2.0values resulting
2.5 0.0 from
0.5 1.0 1.5the2.0
films
2.5 annealed at 150 °C and

200 °C were measured to be 16.7 q (1/Å)and 25.6 MΩcm, respectively.

MΩcm q (1/Å) The relatively low channel
resistance value resulting from the film heat treated at 150 °C led to the better field-effect mobility in
Figure 3.
Figure (a) Out-of-plane
3. (a) Out-of-plane and
and (b)
(b) in-plane
in-plane XRD
XRD patterns
patterns of
of the
the PQCTQx
PQCTQx films.
films.
its device [21,22].
30
Channel resistance data were alsoChannelcollected for um
width = 1000 the various OFET devices. The channel
resistances (RtotalW) were obtained from the inverse
Channel length slope
= 50 umof the output curves in the linear regime at
VG = −80 V. As shown in Figure 4, the channel resistance value resulting from the as-cast PQCTQx
RtotalW (MΩcm)

film was measured to be 21.5 MΩcm, 25and the values resulting from the films annealed at 150 °C and
200 °C were measured to be 16.7 MΩcm and 25.6 MΩcm, respectively. The relatively low channel
resistance value resulting from the film heat treated at 150 °C led to the better field-effect mobility in
its device [21,22].
20
30
Channel width = 1000 um
Channel length = 50 um
RtotalW (MΩcm)

15
25 0 50 100 150 200
ο
Annealing Temperature ( C)
Figure 4. Dependence of the channel resistance on the annealing temperature for the PQCTQx OFET.
20
4.
4. Conclusions
Conclusions
In
In this
this research,
research, aa semiconducting
semiconducting PQCTQx
PQCTQx polymer
polymer based
based upon
upon aa diphenylquinoxaline
diphenylquinoxaline and and
quinacridone unit was applied to
quinacridone unit was applied to OFET OFET devices. A mild thermal annealing
annealing treatment improved the
treatment improved
15 devices. A mild thermal ◦ C exhibited a more face-on ordering
the
PQCTQx OFET performance. The PQCTQx
0 film
50 annealed
100
PQCTQx OFET performance. The PQCTQx film annealed at 150 °C 150at 150
200 exhibited a more face-on ordering
ο −2 2
structure,
structure, enhanced
enhanced field-effect Annealing
field-effect mobility,
mobility, withaTemperature
with avalue
valueofof1.2 ( 10
1.2××10 C)−2 cm
cm2/(Vs), and aa lower
/(Vs), and lower channel
channel
resistance, with a value of 16.7 MΩcm, than did the as-cast film or the film heat treated at 200 ◦ C.
resistance, with a value of 16.7 MΩcm, than did the as-cast film or the film heat treated at 200 °C.
Figure 4. Dependence of the channel resistance on the annealing temperature for the PQCTQx OFET.
Author Contributions: Conceptualization, H.J.S. and T.K.A.; Methodology, Y.J.J.; Software, Y.J.J. and J.H.O.;
Author Contributions:
Y.J.J. and Conceptualization, H.J.S.Y.J.J.
andand
T.K.A.; Methodology, Y.J.J.; Software, Y.J.J. and T.K.A.;
J.H.O.;
4. Conclusions
Investigation, H.J.S.; Data Curation, J.H.O.; Writing-Original Draft Preparation,
Investigation, Y.J.J.
Writing—Review and H.J.S.;
& Editing, Data
H.J.S. andCuration, Y.J.J. and
T.K.A.; Project J.H.O.; Writing-Original
Administration, DraftFunding
H.J.S. and T.K.A.; Preparation, T.K.A.;
Acquisition,
In this
Writing—Review
H.J.S. and research,
T.K.A. a semiconducting
& Editing, PQCTQx
H.J.S. and T.K.A.; polymer basedH.J.S.
Project Administration, upon anda T.K.A.;
diphenylquinoxaline and
Funding Acquisition,
H.J.S. and T.K.A.
quinacridone
Funding: “This research was funded by a National Research Foundation of Korea (NRF) grant funded by the
unit was applied to OFET devices. A mild thermal annealing treatment improved the
PQCTQx
Korean
Funding: OFETresearch
government
“This performance.
(MSIP) The PQCTQx
was(2017R1C1B2002888).
funded film
by a National annealed
This research
Research atwas
150also
°C supported
Foundation exhibited abymore
of Korea (NRF) face-on
thegrant ordering
Industrial
fundedStrategic
by the
Technology enhanced
structure, Development Program (#10053627)
field-effect mobility, funded
with a by the of
value Ministry
1.2 × of
10Trade, Industry,
−2 cm2/(Vs), andanda Energy
lower of Korea.
channel
Korean government (MSIP) (2017R1C1B2002888). This research was also supported by the Industrial
This research was also supported by Basic Science Research Program through the National Research Foundation Strategic
resistance,
Technology
of Korea(NRF)with a value
Development
funded of
the16.7
by Program MΩcm, thanfunded
(#10053627)
Ministry did thebyas-cast film or
the Ministry of the
of Education(2018R1A6A1A03023788). film
Trade, heat
Industry,
We treated at 200of
and Energy
also acknowledge °C.
Korea.
financial
support for this research by the Internal Research Program of Korea Institute of Industrial Technology (PEO19280).
Author Contributions: Conceptualization, H.J.S. and T.K.A.; Methodology, Y.J.J.; Software, Y.J.J. and J.H.O.;
Acknowledgments: This research was supported by a National Research Foundation of Korea (NRF) grant funded
Investigation,
by the KoreanY.J.J. and H.J.S.;
government Data(2017R1C1B2002888).
(MSIP) Curation, Y.J.J. and J.H.O.; Writing-Original
This research Draft Preparation,
was also supported T.K.A.;
by the Industrial
Writing—Review
Strategic Technology& Editing, H.J.S. and
Development T.K.A.;
Program Project Administration,
(#10053627) funded by the H.J.S. andofT.K.A.;
Ministry Trade, Funding
Industry,Acquisition,
and Energy
of Korea.
H.J.S. andThis research was also supported by Basic Science Research Program through the National Research
T.K.A.
Foundation of Korea(NRF) funded by the Ministry of Education(2018R1A6A1A03023788). We also acknowledge
Funding: “This research
financial support for this was funded
research by aInternal
by the National Research
Research Foundation
Program of Korea
of Korea (NRF)
Institute grant funded
of Industrial by the
Technology
(PEO19280).
Korean government (MSIP) (2017R1C1B2002888). This research was also supported by the Industrial Strategic
Technology Development Program (#10053627) funded by the Ministry of Trade, Industry, and Energy of Korea.
Polymers 2019, 11, 563 6 of 7

Conflicts of Interest: The authors declare no conflict of interest.

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