Sunteți pe pagina 1din 6

NSI45090DDT4G

Adjustable Constant Current


Regulator & LED Driver
45 V, 90 − 160 mA + 15%, 2.7 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective http://onsemi.com
solution for regulating current in LEDs. The CCR is based on
patent- pending Self- Biased Transistor (SBT) technology and Ireg(SS) = 90 − 160 mA
regulates current over a wide voltage range. It is designed with a @ Vak = 7.5 V
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents. Anode
The CCR turns on immediately and is at 20% of regulation with 1
only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher
currents by attaching a resistor between Radj (Pin 3) and the Cathode
(Pin 4). The Radj pin can also be left open (No Connect) if no 3
adjustment is required. It requires no external components allowing it Radj
to be designed as a high or low−side regulator. The high anode-
cathode voltage rating withstands surges common in Automotive, 4
Industrial and Commercial Signage applications. This device is Cathode
available in a thermally robust package, which is lead-free RoHS
compliant and uses halogen- free molding compound. For the 4
AEC−Q101 part please see the NSI45090JD datasheet.
Features 1 2
3
• Robust Power Package: 2.7 Watts
DPAK
• Adjustable up to 160 mA CASE 369C
• Wide Operating Voltage Range
• Immediate Turn-On MARKING DIAGRAM
• Voltage Surge Suppressing − Protecting LEDs 1
• SBT (Self−Biased Transistor) Technology A YWW
• Negative Temperature Coefficient NSI C
90DG
• Eliminates Additional Regulation Radj

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Y = Year
Compliant WW = Work Week
NSI90D = Specific Device Code
Applications G = Pb−Free Package
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
ORDERING INFORMATION
• AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering Device Package Shipping†
• Switch Contact Wetting NSI45090DDT4G DPAK 2500/Tape & Reel
• Application Note AND8391/D − Power Dissipation Considerations (Pb−Free)
• Application Note AND8349/D − Automotive CHMSL †For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:


February, 2010 − Rev. 0 NSI45090DD/D
NSI45090DDT4G

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


Rating Symbol Value Unit
Anode−Cathode Voltage Vak Max 45 V
Reverse Voltage VR 500 mV
Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C
ESD Rating: Human Body Model ESD Class 3A
Machine Model Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 76.5 90 103.5 mA
Voltage Overhead (Note 2) Voverhead 1.8 V
Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 86.2 103 119.6 mA
Capacitance @ Vak = 7.5 V (Note 4) C 17 pF
Capacitance @ Vak = 0 V (Note 4) C 70 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 5) TA = 25°C PD 1771 mW
Derate above 25°C 14.16 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 70.6 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 6.8 °C/W
Total Device Dissipation (Note 6) TA = 25°C PD 2083 mW
Derate above 25°C 16.67 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 60 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 6.3 °C/W
Total Device Dissipation (Note 7) TA = 25°C PD 2080 mW
Derate above 25°C 16.64 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 60.1 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 6.5 °C/W
Total Device Dissipation (Note 8) TA = 25°C PD 2441 mW
Derate above 25°C 19.53 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 51.2 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 8) RψJL4 5.9 °C/W
Total Device Dissipation (Note 9) TA = 25°C PD 2309 mW
Derate above 25°C 18.47 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 54.1 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 6.2 °C/W
Total Device Dissipation (Note 10) TA = 25°C PD 2713 mW
Derate above 25°C 21.71 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 46.1 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 5.7 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
5. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 700 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 700 mm2, 2 oz. copper traces, still air.

http://onsemi.com
2
NSI45090DDT4G

TYPICAL PERFORMANCE CURVES


Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air

110 110

Ireg(SS), STEADY STATE CURRENT (mA)


100 TA = −40°C [ −0.223 mA/°C
100
Ireg, CURRENT REGULATION (mA)

90 TA = 25°C typ @ Vak = 7.5 V


90
80
80 TA = 85°C
70
60 70 [ −0.144 mA/°C
60 TA = 125°C typ @ Vak = 7.5 V
50
40 50
30 [ −0.155 mA/°C
40 typ @ Vak = 7.5 V
20
30
10
20
0
−10 TA = 25°C, Radj = Open 10
DC Test Steady State, Still Air, Radj = Open
−20 0
−10 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 10
Vak, ANODE−CATHODE VOLTAGE (V) Vak, ANODE−CATHODE VOLTAGE (V)

Figure 1. General Performance Curve for CCR Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
110 105

Ireg(SS), STEADY STATE CURRENT (mA)


Vak @ 7.5 V
Ireg(P), PULSE CURRENT (mA)

100 TA = 25°C
105
TA = 25°C
95
100
90
95
85

90
80
Non−Repetitive Pulse Test
85 75
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 85 90 95 100 105 110 115 120
Vak, ANODE−CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA)

Figure 3. Pulse Current (Ireg(P)) vs. Figure 4. Steady State Current vs. Pulse
Anode−Cathode Voltage (Vak) Current Testing

104 160
Ireg(SS), STEADY STATE CURRENT (mA)

103 Vak @ 7.5 V


Ireg, CURRENT REGULATION (mA)

102 TA = 25°C 150


101 Radj = Open
100 140
99
98 130
97
120
96
95
110
94
93 100
92
91 90
90
89 80
0 10 20 30 40 50 60 70 80 90 1 10 100 1000
TIME (s) Radj (W)
Figure 5. Current Regulation vs. Time Figure 6. Ireg(SS) vs. Radj

http://onsemi.com
3
NSI45090DDT4G

4200
3900 700 mm2/2 oz
3600

POWER DISSIPATION (mW)


500 mm2/2 oz
3300
3000
2700 300 mm2/2 oz
2400
2100
1800 700 mm2/1 oz
1500
1200 500 mm2/1 oz
900
600 300 mm2/1 oz
300
−40 −20 0 20 40 60 80 100 120
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Dissipation vs. Ambient
Temperature @ TJ = 1505C

APPLICATIONS

D1 D1
Q1 Q2 Qx Q1 Q2 Qx
Anode Anode

Cathode
Radj Radj Radj Cathode
Radj Radj Radj
+ LED LED LED +
Vin − Vin LED
− HF3−R5570 HF3−R5570 HF3−R5570
HF3−R5570
LED LED LED LED

HF3−R5570 HF3−R5570 HF3−R5570


HF3−R5570

LED LED LED LED

HF3−R5570 HF3−R5570 HF3−R5570 HF3−R5570

Figure 8. Typical Application Circuit Figure 9. Typical Application Circuit


(30 mA each LED String) (90 mA each LED String)

Number of LED’s that can be connected is determined by: Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode D1 is a reverse battery protection diode
LED’s = ((Vin − QX VF − D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V
Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 90 mA
LED VF = 2.2 Vdc @ 30 mA (12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series.
(12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA
90 mA/30 mA = 3 Drivers (Q1, Q2, Q3)

http://onsemi.com
4
NSI45090DDT4G

Comparison of LED Circuit using CCR vs. Resistor Biasing


ON Semiconductor CCR Design Resistor Biased Design
Constant brightness over full Supply Voltage Large variations in brightness over full Automotive Supply Voltage
(more efficient), see Figure 10
Little variation of power in LEDs, see Figure 11 Large variations of current (power) in LEDs
Constant current extends LED strings lifetime, see Figure 10 High Supply Voltage/ Higher Current in LED strings limits lifetime
Current decreases as voltage increases, see Figure 10 Current increases as voltage increases
Current supplied to LED string decreases as temperature LED current decreases as temperature increases
increases (self-limiting), see Figure 2
Single resistor is used for current select Requires costly inventory
(need for several resistor values to match LED intensity)
Fewer components, less board space required More components, more board space required
Surface mount component Through-hole components

140 800
TA = 25°C TA = 25°C
120 700

Circuit Current with 600 LED Power with


100 CCR Device Pd LEDs (mW) CCR Device
500
80
I (mA)

400 LED Power


60 with 83.3 W
300
40 Representative Test Data Representative Test Data
200
Circuit Current for Figure 8 Circuit, Current for Figure 8 Circuit, Pd of
20 with 83.3 W of LEDs, FR−4 @ 300 mm2, 100 LEDs, FR−4 @ 300 mm2,
2 oz Copper Area 2 oz Copper Area
0 0
9 10 11 12 13 14 15 16 9 10 11 12 13 14 15 16
Vin (V) Vin (V)
Figure 10. Series Circuit Current Figure 11. LED Power

Current Regulation: Pulse Mode (Ireg(P)) vs DC Ireg(SS) for stated board material, size, copper area and
Steady-State (Ireg(SS)) copper thickness. Ireg(P) will always be greater than Ireg(SS)
There are two methods to measure current regulation: due to the die temperature rising during Ireg(SS). This heating
Pulse mode (Ireg(P)) testing is applicable for factory and effect can be minimized during circuit design with the
incoming inspection of a CCR where test times are a correct selection of board material, metal trace size and
minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing weight, for the operating current, voltage, board operating
is applicable for application verification where the CCR will temperature (TA) and package. (Refer to Thermal
be operational for seconds, minutes, or even hours. ON Characteristics table).
Semiconductor has correlated the difference in Ireg(P) to

http://onsemi.com
5
NSI45090DDT4G

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)


CASE 369C−01
ISSUE C

NOTES:
−T− SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
F J R 0.180 0.215 4.57 5.45
L S 0.025 0.040 0.63 1.01
H U 0.020 −−− 0.51 −−−
V 0.035 0.050 0.89 1.27
D 2 PL Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T

RECOMMENDED FOOTPRINT

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172


0.228 0.063 0.243

SCALE 3:1 ǒinches


mm Ǔ

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative

http://onsemi.com NSI45090DD/D
6

S-ar putea să vă placă și