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2. [12 M]
a. Implement the equation Y ABC D E using complementary CMOS.
b. Size the devices so that the output resistance is the same as that of an inverter
with an NMOS W/L = 2 and PMOS W/L = 4.
c. Which input pattern(s) would give the worst and best equivalent pull-up or pull-
down resistance?
d. If P(A=1) = P(B=1) = P(C=1) = P(D=1) = P(E=1) = 0.5, determine the power
dissipation in the logic gate. Assume VDD=1.2 V, CL=15 fF and fclk=600 MHz.
Hint: P(L and M) = P(L).P(M) and P(L or M) = P(L)+P(M)-P(L).P(M)
e. What are the parasitic delay of the gate and the logical effort of the 5 inputs?
Ain Shams University Total Marks: 25 Marks
Faculty of Engineering Duration: 1.5 hours
CHEP COMM Program – Fall 2014 Open-Book Exam
COMM 471: Digital Circuit Design Dr. Sameh A. Ibrahim
Ain Shams University Total Marks: 25 Marks
Faculty of Engineering Duration: 1.5 hours
CHEP COMM Program – Fall 2014 Open-Book Exam
COMM 471: Digital Circuit Design Dr. Sameh A. Ibrahim
a.
A B Y
0 0 VDD = 2.5 V
0 VDD 0
VDD 0 0
VDD VDD VDD - VTN = 1.9 V
b. Y=A XNOR B
c.