BSC094N03S G

OptiMOS®2 Power-Transistor
Product Summary
Features
V DS 30 V
• Fast switching MOSFET for SMPS
R DS(on),max 9.4 mΩ
• Optimized technology for notebook DC/DC converters
ID 35 A
1)
• Qualified according to JEDEC for target applications

• N-channel

• Logic level

• Excellent gate charge x R DS(on) product (FOM) PG-TDSON-8

• Very low on-resistance R DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

Type Package Marking

BSC094N03S G PG-TDSON-8 94N03S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 35 A

T C=100 °C 35

T A=25 °C,
14.6
R thJA=45 K/W 2)

Pulsed drain current I D,pulse T C=25 °C3) 140

Avalanche energy, single pulse E AS I D=35 A, R GS=25 Ω 90 mJ

I D=40 A, V DS=24 V,
Reverse diode dv /dt dv /dt di /dt =200 A/µs, 6 kV/µs
T j,max=150 °C

Gate source voltage V GS ±20 V

Power dissipation P tot T C=25 °C 52 W

T A=25 °C,
2.8
R thJA=45 K/W 2)

Operating and storage temperature T j, T stg -55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

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Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 2.4 K/W

Thermal resistance, R thJA minimal footprint - - 62

junction - ambient 6 cm2 cooling area2) - - 45

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=25 µA 1.2 1.6 2

V DS=30 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C

V DS=30 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA

Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 11.2 14 mΩ

V GS=10 V, I D=35 A - 7.8 9.4

Gate resistance RG - 1 - Ω

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 26 53 - S
I D=35 A

1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3

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Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 1350 1800 pF

V GS=0 V, V DS=15 V,
Output capacitance C oss - 480 640
f =1 MHz
Reverse transfer capacitance Crss - 64 96

Turn-on delay time t d(on) - 4.5 6.8 ns

Rise time tr V DD=15 V, V GS=10 V, - 3.8 5.7

Turn-off delay time t d(off) I D=17.5 A, R G=2.7 Ω - 18 27

Fall time tf - 3.0 4.5

Gate Charge Characteristics 3)

Gate to source charge Q gs - 4.3 5.7 nC

Gate charge at threshold Q g(th) - 2.2 2.9

Gate to drain charge Q gd V DD=15 V, I D=17.5 A, - 2.8 4.2

Q sw V GS=0 to 5 V
Switching charge - 4.9 7.0

Gate charge total Qg - 10 14

Gate plateau voltage V plateau - 3.2 - V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 9 12 nC
V GS=0 to 5 V

Output charge Q oss V DD=15 V, V GS=0 V - 11 14

Reverse Diode

Diode continous forward current IS - - 35 A

T C=25 °C
Diode pulse current I S,pulse - - 140

V GS=0 V, I F=35 A,
Diode forward voltage V SD - 0.93 1.2 V
T j=25 °C

V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 10 nC
di F/dt =400 A/µs

3)
See figure 16 for gate charge parameter definition

Rev. 1.7 page 3 2008-04-28

 BSC094N03S G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V

60 40

50

30

40
P tot [W]

I D [A]
30 20

20

10

10

0 0
0 40 80 120 160 0 40 80 120 160
T C [°C] T C [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 1000

101 10

limited by on-state
resistance
1 µs

102 100

10 µs
0.5
100 1

100 µs
0.2
DC
Z thJC [K/W]
I D [A]

101 10

0.1
1 ms
0.05

10 ms 10-1 0.1

0.02

0.01
100 1

single pulse

10-1 0.1
0.1 1 10 100
10-2 0.01
0 0 0 0 0 0

-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1
V DS [V] t p [s]

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5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

80 30
3V 3.2 V 3.4 V 3.7 V

10 V
70 4.5 V
25

60 4V

20
50

R DS(on) [mΩ]
4V
I D [A]

40 3.7 V 15

4.5 V
30
3.4 V
10

10 V
20
3.2 V

5
10 3V

2.8 V

0 0
0 1 2 3 0 10 20 30 40 50
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

80 80

70 70

60 60

50 50
g fs [S]
I D [A]

40 40

30 30

20 20
150 °C
25 °C
10 10

0 0
0 1 2 3 4 5 0 10 20 30 40 50 60
V GS [V] I D [A]

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9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=35 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
parameter: I D

16 2.5

14

2
12
98 % 250 µA

10
R DS(on) [mΩ]

1.5

V GS(th) [V]
25 µA

8
typ

1
6

4
0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 10000

103

Ciss
102 150 °C
25 °C
103 1000
150 °C, 98%

Coss
C [pF]

I F [A]

101

25 °C, 98%
102 100

Crss

100

101 10

10-1
0 5 10 15 20 25 30 0 0.5 1 1.5 2
V DS [V] V SD [V]

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13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=17.5 A pulsed

parameter: T j(start) parameter: V DD

100 12

15 V
10

6V 24 V

100 °C 25 °C
8
125 °C

V GS [V]
I AV [A]

10 6

1 0
1 10 100 1000 0 5 10 15 20 25
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

40
V GS

Qg

35
V BR(DSS) [V]

30

V g s(th)

25

Q g(th) Q sw Q g ate

Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [°C]

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Package Outline PG-TDSON-8

PG-TDSON-8: Outline

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Package Outline

PG-TDSON-8: Tape

Dimensions in mm

Rev. 1.7 page 9 2008-04-28

 BSC094N03S G

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 1.7 page 10 2008-04-28

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