EXPERIMENT 81111111111111111111111111

OBJECTIVE: To demonstrate the operation of the typical junction FET and determine its
transconductance.

REQUIRED MATERIALS:

 1 unit Analog/Digital Multimeter

 1 pc 2N3819 (N-channel)
 1 pc 100, ½ watt resistor
 1 pc 1k, ½ watt resistor

Please check the box after the material has been identified.

LABORATORY INSTRUCTION/DISCUSSION :

Laboratory instruction will be discussed by instructor before performing

the experiment.

PROCEDURE:

1. Construct the circuit shown in Figure 2-80 following the wiring diagram shown in
Figure 2-81. The leads on the N-channel junction FET that you will be using are
identified in Figure 2-81. Turn the negative (-) voltage control fully clockwise so that
the full power supply voltage (-15 volts dc) is applied to the 100 k ohms
potentiometer (designated as R1). You will be using this potentiometer to control the
voltage applied to the two 1k ohm resistor (R2 and R3) that are in series. These two
resistors divided the voltage taken from R1 in half. The reduced voltage that appears
across R3 serves as the gate-to-source bias voltage (VGS) for the FET.
2. Turn the positive (+) voltage control fully clockwise so that the full power supply
voltage (+ 15 volts dc) is applied to the 1 K ohm potentiometer (R3). You will using
this potentiometer to control the drain-to source (VDS) applied to the FET. The drain
current (IB) flowing through the FET must pass through a 100 ohm resistor (R4). As
you proceed through this experiment you will periodically measure the voltage across
R4 and the use Ohms law to calculate IB.
3. Turn potentiometer R1 and R5 fully counterclockwise and then turn on your
Electronic Design Experimenter.
4. Leave potentiometer R1 fully counterclockwise so that the gate-to-source voltage
(VGS) applied to the FET will be zero . Adjust potentiometer R5 until the drain-to-
source voltage (VDS) is equal to 1 volt(measure this voltage with your voltmeter ).
5. Now use your voltmeter reading and resistance of R4 (100 ohms) to calculate the
FET’s drain current (ID) according to Ohm’s law. Record your calculated ID value (in
milliamperes) immediately below the table provided in Figure 2-82.
 VGS = 0 volts

VDS (volts) 1 2 3 4 5 6 7 8

ID (mA)

Figure 2-82
Table for recording ID values when VGS equals zero.

6. Now complete the table in Figure 2-82 by adjusting VDS to the remaining values
indicated and recording the corresponding values of ID. To do this, simply repeat steps
4 and 5 above for each value of VDS indicated. When you complete the table in Figure
2-82 you will have a permanent record of ID values over a range of VDS values when
VGS is equal to zero.
7. Now adjust potentiometer R1 so that VGS is equal to 0.25 volts (measure with your
voltmeter).
8. Without disturbing the setting of R1 adjust potentiometer R3 until VDS is equal to 1
volts (measure VDS with your voltmeter).
9. Now use your voltmeter to measure the voltage across R4. Use this voltage reading
and the resistance of R4 (100 ohms) to calculate ID according to ohm’s law. Record
your calculated ID value (in milliamperes) immediately below the VDS value of 1 volt
in the table provided in Figure 2-83.

VGS = -25 volts

VDS (volts) 1 2 3 4 5 6 7 8

ID(mA)

Figure 2-83
Table for recording ID values VGS equals –25 volts.
10. Now complete the table in Figure 2-83 by adjusting VGS to the remaining values
indicated and recording the corresponding values of ID. to do this , simply repeat steps
8 and 9 above for each value of VDS indicated. When you complete the table in Figure
2-83, you will have a record of ID values over a range of VDS values when VGS is
equal to –0.25 volts. A negative sign is place before the VGS value to indicate that the
gate is negative with respect to the source.
11. Adjust potentiometer R1 so that VGS is equal to 0.5 volts (measure with your
voltmeter).
12. Without disturbing the setting of R1, adjust potentiometer R5 until VDS is equal to 1
volt (measure VDS with your multimeter).
13. Use your voltmeter to measure the voltage across R4. Then use this voltage reading
and the resistance of R4 (100 ohms) to calculate ID according to Ohm’s law. Record
 your calculated ID according to Ohm’s law. Record your calculated ID value (in
milliamperes) immediately below the VDS value of 1 volt in the table provided in
Figure 2-84.

VGS = -5 volts

VDS (volts) 1 2 3 4 5 6 7 8

ID (mA)

Figure 2-84
Table for recording ID values when VGS equal – 5 volts.
14. Now complete the table in Figure 2-84 by performing steps 12 and 13 above the
remaining VDS values indicated. When you complete the table, you will have a
permanent record of ID values over a range of VDS values when VGS is equal to –0.5
volts.
15. Adjust potentiometer R1 so that the VGS is equal to 0.75 volts (measure with your
voltmeter).
16. Without disturbing the setting of R1, adjust potentiometer R3 until VGS is equal to 1
volt (measure with your voltmeter ).
17. Use your voltmeter to measure the voltage across R4. Then use this voltage reading
and the resistance of R4 (100 ohms) to calculate ID according to Ohm’s law. Record
your calculated ID value (in milliamperes) immediately below the VDS value of 1 volt
in the table provided in Figure 2-85.

VGS = -75 volts

VDS (volts) 1 2 3 4 5 6 7 8

ID (mA)

Figure 2-85
Table for recording ID values when VGS equals -75 volts.
18. Complete the table in Figure 2-85 by performing steps 16 and 17 above the remaining
VDS values indicated. When you complete this table you will have a record of ID
values over a range of VDS values when VGS is equal to – 0.75 volts.
19. Now use the corresponding values of VDS and ID that you recorded in Figure 2-82 to
plot the drain characteristics curves on the graph shown in Figure 2-86. Connect the
various points plotted to form a continuous curve VGS = 0.
20. Use the corresponding values of VDS and ID in Figure 2-83 to plot a second curve on a
graph of Figure 2-86. Label this curve VGS = -0.5 volts.
21. Use the corresponding values of VDS and ID in Figure 2-84 to plot a third curve on the
graph of Figure 2-86. Label this curve VGS = -0.5 volts.
22. Use the corresponding values of VDS and ID in Figure 2-85 to plot a curve on the graph
of Figure 2-86. Label this curve VGS = -0.75 volts.
ID (MILLIAMPERES)

7
6

1
0
1 2 3 4 5 6 7
VDS (VOLTS)
Figure 2-86
Graph for recording VDS and ID values

23. Now use the set of drain characteristics curve that you plotted in Figure 2-86 to
determine that transconductance of the FET. Select a constant value of VDS that is well
above the pinch-off voltage (VP) of the device (possibly 6 or 7 volts) and observe the
change in ID when VGS changes from 0 to –0.25 volts. This will ensure that your
transconductance value will be measured in the pinch-off region of the device.

Transconductance = ID =
VGS

-Return the materials after everything is done-

CONCLUSION: