1200V Highspeed 3 Igbt: A New Igbt Family Optimized For High-Switching Speed

Application Note AN-IGBT-09-2013-V1.
1-EN-019
Davide Chiola, Holger Hüsken
1200V HighSpeed 3 IGBT

A new IGBT family optimized for high-switching speed
Table of contents
1 Short Description ........................................................................................................................................ 3
1.1 H3 1200V Product Family .................................................................................................................. 3

2 Technology Overview ................................................................................................................................. 4
3 Static and Dynamic Behavior ..................................................................................................................... 6
3.1 Static Behavior ................................................................................................................................... 6
3.2 Dynamic Behavior .............................................................................................................................. 7

3.2.1 Turn-off ........................................................................................................................................... 7
3.2.2 Turn-on ......................................................................................................................................... 10
4 Power Losses Simulation with IPOSIM™ ..............................................................................................12
5 Case Study: operation at high switching frequency .............................................................................13
www.infineon.com/highspeed3
Application Note AN-IGBT-09-2013-V1.1-EN-019
Edition 2013-02-02
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© Infineon Technologies Austria AG 2013.
All Rights Reserved.
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AN-IGBT-02-2010-EN-020
Revision History: 13-09-01, V1.1
Previous Version: V1.0 (02/2010)
Subjects: 1200V HighSpeed 3 IGBT, A new IGBT family optimized for high-switching speed
Authors: Davide Chiola, IFAT IGBT AE
Holger Hüsken, IFAT IGBT AE
We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will
help us to continuously improve the quality of this document. Please send your proposal (including a
reference to this document) to: Davide.Chiola@infineon.com
2
1 Short Description
d
The “HighSpeed 3 generation (H3)” Product Family is an evolution of the “T2” 1200V, based on IGBT4
technology.
1.1 H3 1200V Product Family
VCE(on) @ Ets
Package
V(BR)CES IC @25°C IC @100°C 175°C @ 175C tSCW VGEth
Part number Type Type
Typical
[V] [A] [A] [V] [mJ] [usec] [V]

IGW15N120H3 Single chip TO247
1200 30 15 2.70 2.5 10 5.8
IKW15N120H3 Duo-pak TO247

1200 50 25 2.70 4.3 10 5.8

1200 80 40 2.70 7.0 10 5.8
Table 1.1: HS 1200V Product Family
The product family is optimized for the following range of applications:
 UPS
 Welding
 Solar inverters
Main features are:
 Reduced switching losses for switching Frequencies above 30kHz

 Smooth switching behavior
 Optimized diode for target applications
3
2 Technology Overview
TM
At the beginning of the year 2000 Infineon has introduced the IGBT3 TRENCHSTOP technology concept,
bringing together the benefits of Trench Gate and Field Stop structures (Figure 1). An almost ideal carrier
distributions inside the Chip is achieved, that allows at the same time low V CE(sat) and short tail currents at
turn-off.
Figure 2.1: IGBT technology comparison: vertical structure
4
The IGBT4 technology released in 2008 is an evolution of the IGBT3, to adapt the device characteristics for
different switching speeds and power levels and allow a better silicon utilization. This technology base was
used also for the HighSpeed 3, to further enhance the inherent fast switching capability of the technology,
still keeping the low VCE(sat) typical of Infineon IGBT. The Fast IGBT Technologies roadmap is presented in
Figure 2.2 for a 25A Chip rating:
F.O.M.=
(Esw,tot/A) x (Vcesat@In) 1200V fast IGBT Roadmap
0.80
IGBT2 IGBT3 IGBT4 IGBT4

0.70
Fast
(mJ/AxV)
Losses (mJ/AxV)
0.60
Normalized Losses
0.50
SKW25N120
IKW25T120 NEW !!
0.40
0.30
IGBT1 (1990): IKW25N120T2
A/A0=1 IKW25N120H3
0.20
1992 1994 1996 1998 2000 2002 2004 2006 2008 2010 2012
Figure 2.2: IGBT Technology roadmap for Fast IGBT
5
3 Static and Dynamic Behavior
3.1 Static Behavior
Although optimized for fast switching, thanks to the Trench Gate, the HighSpeed 3 maintains a low VCE(sat)
over a wide range of output currents, resulting in the following benefits at system level:
 Reduced losses and improved system efficiency
 Reduced number of devices in parallel for high power systems
 Reduced heatsink size
Output characteristics IKW40N120H3

Vge=15V
100
90
80
Tj=25°C
70
60
Ic (A)
50
40 IKW40N120H3 Tj=150°C
30
20
Best Competitor (Comp1)
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vce (V)
Figure 3.1: Output characteristics of the HighSpeed 3 IGBT
The HighSpeed 3 shows drastically reduced VCE(sat): at rated current (40A in this case) approximately 500mV
lower VCE(sat) at 25°C and 700mV at 150°C to the best competitor. The gap is quite constant in the range
between half and full nominal current at high temperature, typical operating range of the device in real
application conditions, especially at high switching frequency were some current de-rating may be required.
6
3.2 Dynamic Behavior
The HighSpeed 3 is optimized for fast switching, so both turn on and turn-off are being considered.
3.2.1 Turn-off
In Figure 3.2 the turn-off waveform at high temperature is compared to the best competitor.
IKW40N120H3 vs Best Competitor (Comp.1)

Vce=600V, Ic=40A, Rg=5.2 Ohm, Tj=150°C
5
V, I
4
3
2
1 Uce ref
0 Ic ref
-1 Uce dut
-2 Ic dut
-3
-4
-5
0.2 0.4 0.6 0.8 1 t1.2
[µs]
Vce 100V/div, NP -4 Vce 100V/div, NP -4
Ic 5A/div, NP -4 Ic 5A/div, NP -4
Vgs 10V/div, NP 0 Vgs 10V/div, NP 0
Figure 3.2: Turn-off Transient Waveforms
The HighSpeed 3 shows much shorter tail current. At frequencies above 20kHz the small loss contributions
from this tail current are adding-up at each switching cycle, increasing significantly the overall turn-off losses.
The HighSpeed 3 shows a clear advantage in this direction. Moreover a smooth current waveform without
sudden changes in dI/dt is observed.
7
In order to characterize the device behavior in a wide range of application conditions, the dependence of E off
losses from on IC and Rg are investigated (Figure 3.3).
Turn-off vs Sw.Current
Vce=600V, Rg=5.2 Ohm, Tj=150°C
4.5
4.0
3.5
3.0
Eoff (mJ)
2.5
2.0
1.5
1.0 IKW40N120H3
0.5
0.0
0 10 20 30 40 50 60 70 80 90
Switching Current Ic (A)
Turn-off vs Rg
Vce=600V, Ic=20A, Tj=150°C
2.5
2.0
Eoff (mJ)
1.5
1.0
IKW40N120H3
0.5
0.0
0 5 10 15 20 25 30 35 40 45
Rg (Ohm)
Figure 3.3: Eoff losses vs Rg and Switching current Ic
In the typical operating current range between half and full nominal current, the HighSpeed 3 maintains the
lowest Eoff losses over a wide range of Rg selection. This will insure reduced power dissipation in a wide
range of utilization conditions at the customer.
8
In Figure 3.4 an overview of the trade-off VCE(sat)-Eoff for different competitors is presented. Devices with
different die size are compared. To normalize the turn-off losses, each sample device is switched at nominal
current with nominal Rg. The resulting Eoff losses are scaled by the switching current (mJ/A). V CE(sat) is
measured at rated current for each device.
Trade-off diagram 150°C

Vce,sw=600V, Rg=Rg_nom, Ic=Ic,nom
0.16
IKW25T120 IFX
0.14 IGBT3
Competitor1
Fairchild
0.12 Competitor2
IR
Eoff / mJ/A
0.10
Competitor1
FGA25N120ANTD Competitor1
FGA25N120AND
0.08 IGBT4
IKW25N120T2 IGBT2
0.06 Competitor1
FGL40N120AND SKW25N120
IKW25N120H3 BEST
0.04 IGBT4
Fast COMPETITOR Competitor2
IRGP20B120UD-E
0.02
0.00
2 2.4 2.8 3.2 3.6 4 4.4
VCEsat / V
Figure 3.4: Trade-off VCE(sat)-Eoff
The HighSpeed 3 (IGBT4 Fast) device shows a clear improvement to the previous TRENCHSTOP™2
(IGBT4) generation for operation at high switching frequencies: the turn-off losses are cut by nearly 40%, at
the expense of an increase of VCE(sat) by only 20%. A significantly superior trade-off VCE(sat)-Eoff in comparison
with the best competitor is observed.
9
3.2.2 Turn-on
In order to improve the IGBT turn-on characteristics, a fast switching diode is needed. Moreover, as will be
visible in the next paragraph, in inverter operations above 20kHz even at high cos  the overall diode loss
adds-up to less than 15% of the total inverter losses. Therefore it makes sense to save Silicon area on the
diode and reduce the total product cost.
th
The Emitter Controlled diode of the 4 generation was selected as freewheeling diode for the HighSpeed 3:
in order to operate the diode at high current densities, ruggedness test were performed by switching the
diode beyond the datasheet specification. In Fig 6 the 40A-rated diode of the IKW40N120H3 is switched-off
at 175°C, 850V bus voltage, 110A commutation current. To increase the dI/dt, the IGBT is kept at 25°C and
driven with 23V gate voltage at small gate resistor (5.7Ohm) (Figure 3.5):
Figure 3.5: Diode commutation at extreme switching conditions
The diode is surviving these extreme switching conditions.
10
An additional ruggedness test was performed by turning-on the 40A HighSpeed 3 IGBT at high currents by
increasing Vge at low Rg, high Bus voltage of 850V and high temperature. The diode max power stress is
measured (Figure 3.6):
Diode peak power losses
70
60
50 Ugate =15V
Ugate =17V
Pdmax [kW]
40
Ugate =19V
Ugate =20V
30
Ugate =21V
20 Ugate =23V
10
0
0 50 100 150 200
Id [A]
Figure 3.6: Diode power dissipation at IGBT Turn-on (IKW40N120H3): VCE=850V, Tj (diode)=175°C
The diode stress has a maximum at approx 2*nominal current: even Vge=23V, resulting in more than 3 times
nominal switching current, the diode destruction point is not reached, demonstrating the extreme ruggedness
of the technology and validating the possibility to operate the diode at high current densities.
11
4 Power Losses Simulation with IPOSIM™

The loss contribution of Diode and IGBT in a typical target application was simulated using the Infineon
TM
internal simulation software IPOSIM . The simulation is performed for a 3-phase inverter configuration
under the assumption of sinusoidal output currents at inductive load (hard switching).
The TRENCHSTOP™2, HighSpeed 3 and best competitor are compared for the 40A current-class. Load
current is 40A, bus voltage 600V, switching frequency 20kHz and the phase angle between voltage and
current is varied between 0.85 and 1, to evaluate the effect on the diode when some reactive power is
present. For the target applications like UPS and Solar cos is very close to 1.
Inverter Loss (W)
TM
Figure 4.1: IPOSIM simulation results
12
The results can be summarized as follows:

 the IGBT losses are the main contribution to the overall inverter losses
 at 20kHz the switching losses are playing for ~60% of the overall IGBT losses, confirming that the
device has to be optimized for fast switching, but still the role of VCE(sat) is not negligible
 In comparison with the previous generation TRENCHSTOP™ 2, the HighSpeed 3 shows 30%
reduction in switching losses and only 16% increase in conduction losses
 The HighSpeed 3 shows approx 10% lower losses than the best competitor, setting benchmark
performance
5 Case Study: Operation at high switching frequency
The operation of the HighSpeed 3 at high switching frequency is evaluated in comparison with the best
competitor device in the following conditions:
Bus Voltage = 800V

Load Current = 40A
Square Wave with Duty Cycle = 50%
Tj(max) = (IKW40N120H3) = 175°C
Tj(max) = (Best competitor) = 150°C
The total losses are compared at T j = 150°C (Figure 5.1):
Power Dissipation
Vdc=800V, D=0.5, Ic=40A, Tj=150C
Best competitor IKW40N120H3
805
705
Best Competitor
605
Power Dissipation
@ 150°C (W)
505
405
305 IKW40N120H
205
105
5
0 10 20 30 40 50 60 70 80
Switching Frequency (kHz)
Figure 5.1: Total losses of IKW40N120H3 (TO-247) and Best Competitor (TO-264)
At 40A, Tj=150°C, the IFX device provides 15% lower losses.
13
Above 10kHz, the losses are dominated by switching losses (Figure 5.2).
Power Dissipation IKW40N120H3

Vdc=800V, D=0.5, Ic=40A, Tj=175C
IKW40N120H3 Pcond IKW40N120H3 Psw

605
505
Power Dissipation
405
@ 175°C (W)
305
Sw Losses
205
105 Conduction Losses
5
0 10 20 30 40 50 60 70 80
Figure 5.2: breakdown of switching vs. conduction losses
14
The max allowable load current is calculated, assuming T C = 100°C and Tj = Tj(max) (Figure 5.3):
Load Current vs Frequency

Vdc=800V, D=0.5, Tc=100°C
Best competitor IKW40N120H3
45
40
35
Load Current (A)
Tj=175C
30 Power dissipation=242W
25
20
15 Tj=150C
Power dissipation=200W
10
5
0 10 20 30 40 50 60 70 80 90 100
Figure 5.3: Max load current vs switching frequency
Despite the smaller package (TO-247 vs TO-264, 35% lower footprint), thanks to the higher T j(max) and lower
losses, for a fixed TC = 100°C the IKW40N120H3 device can run up to 50% higher Load Current than the
best competitor device.
At fsw=70kHz, the IKW can handle 25A peak load current as long as T C is maintained below 80°C.
15
Higher load currents can be achieved by reducing the DC Link voltage below 800V. For example at
Vdc=600V, TC(max)=64°C with IC=35A (Fig12)
Load Current vs Max Case Temperature

Vdc=800V, D=0.5, f_sw=70 kHz
Best competitor IKW40N120H3 IKW40N120H3 Vdc=600V
160
140
120
Max Tc (°C)
100
80
60
40
0 5 10 15 20 25 30 35 40
Load Current (A)
Figure 5.4: Max load current at fsw = 70kHz and dependence on bus Voltage Vdc
16

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Application Note AN-IGBT-09-2013-V1.

1200V HighSpeed 3 IGBT

1.1 H3 1200V Product Family .................................................................................................................. 3

3.1 Static Behavior ................................................................................................................................... 6

3.2 Dynamic Behavior .............................................................................................................................. 7

We Listen to Your Comments

1.1 H3 1200V Product Family

[V] [A] [A] [V] [mJ] [usec] [V]

IGW25N120H3 Single chip TO247

IGW40N120H3 Single chip TO247

Table 1.1: HS 1200V Product Family

The product family is optimized for the following range of applications:

Main features are:

 Reduced switching losses for switching Frequencies above 30kHz

Figure 2.1: IGBT technology comparison: vertical structure

IGBT2 IGBT3 IGBT4 IGBT4

Figure 2.2: IGBT Technology roadmap for Fast IGBT

3 Static and Dynamic Behavior

3.1 Static Behavior

Output characteristics IKW40N120H3

Figure 3.1: Output characteristics of the HighSpeed 3 IGBT

3.2 Dynamic Behavior

IKW40N120H3 vs Best Competitor (Comp.1)

Figure 3.2: Turn-off Transient Waveforms

Figure 3.3: Eoff losses vs Rg and Switching current Ic

Trade-off diagram 150°C

Figure 3.4: Trade-off VCE(sat)-Eoff

Figure 3.5: Diode commutation at extreme switching conditions

The diode is surviving these extreme switching conditions.

Diode peak power losses

4 Power Losses Simulation with IPOSIM™

Inverter Loss (W)

The results can be summarized as follows:

5 Case Study: Operation at high switching frequency

Bus Voltage = 800V

The total losses are compared at T j = 150°C (Figure 5.1):

Best competitor IKW40N120H3

Switching Frequency (kHz)

At 40A, Tj=150°C, the IFX device provides 15% lower losses.

Power Dissipation IKW40N120H3

IKW40N120H3 Pcond IKW40N120H3 Psw

105 Conduction Losses

Switching Frequency (kHz)

Figure 5.2: breakdown of switching vs. conduction losses

Load Current vs Frequency

Switching Frequency (kHz)

Figure 5.3: Max load current vs switching frequency

Load Current vs Max Case Temperature

Load Current (A)

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