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1. For the DMOSFET circuit shown in fig., the device parameters are:
VGS(off) = -8V, IDSS=10mA
Solution:
IG=0
Therefore, VGS=0
Then, I D will be equal to IDSS which is equal to 10mA.
0=VDD-IDRD-VDS
But ID = IDSS and transposing terms to the other side to get VDS
VDS=VDD-IDSSRD
By Substitution,
VDS = 18-6.8
VDS = 11.2V
2. The drain current changes from 5mA to 7mA when the gate voltage is changed
from -4.0V to -3.7V in the amplifier circuit shown in fig.
Solution:
By deriving the formula for the Voltage gain we will come up with
𝑉𝑜
𝐴𝑣 = −
𝑉𝑖
𝑔𝑚 (𝑉𝐺𝑆 )(𝑅𝐷 ||𝑅𝐿 )
𝐴𝑣 = −
𝑉𝐺𝑆
Then, we cancel out VGS, therefor we will come up with the equation
𝐴𝑣 = −𝑔𝑚(𝑅𝐷 ||𝑅𝐿 )
Next is that we will compute for the trans conductance of the equation which is
gm.
∆𝐼𝐷
𝑔𝑚 =
∆𝑉𝐺𝑆
2𝑚𝐴
𝑔𝑚 =
0.3𝑉
𝑔𝑚 = 6.66𝑚𝑆
𝐴𝑣 = −6.66𝑚𝑆(6𝐾Ω||6𝐾Ω)
𝐴𝑣 = −20
3. Find the drain-source voltage, VDS, for the NMOS transistor circuit shown in fig.
The device parameters are: conductance parameter, k= 600A/v2 and VT = 2V.
Solution:
As we can observe in the circuit the circuit is a Voltage Divider MOSFET,
I G=0,
𝑉𝐺𝑆 = 5V
And we use the formula for ID which is
ID=k(VGS-VT)2
Then we get,
𝐼𝐷 = 600𝜇𝐴/𝑣 2 (5𝑉 − 2𝑉)2
𝐼𝐷 = 5.4𝑚𝐴
Solution:
By deriving the formula for the voltage gain you will get,
𝑔𝑚(𝑅𝐷 ||𝑅𝐿 )
𝐴𝑣 = −
1 + 𝑔𝑚𝑅𝑠
Then by substituting all the given parameters
4000𝜇𝑠(6𝐾||10𝐾)
𝐴𝑣 = −
1 + 4000𝜇𝑠(400Ω)
𝐴𝑣 = −5.7