PD - 97407

IRLB3813PbF
Applications HEXFET® Power MOSFET
l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg (typ.)
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification 30V 1.95mΩ@VGS = 10V 57nC
for Telecom and Industrial Use
l Power Tools D

Benefits S
D
l Very Low RDS(on) at 4.5V VGS G
l Ultra-Low Gate Impedance
TO-220AB
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
G D S
Gate Drain Source

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30
V
VGS Gate-to-Source Voltage ± 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 260h
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 190h A
IDM Pulsed Drain Current c 1050
PD @TC = 25°C Maximum Power Dissipation g 230
W
PD @TC = 100°C Maximum Power Dissipation g 120
Linear Derating Factor 1.6 W/°C
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
°C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw x
10lb in (1.1N m) x
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case g ––– 0.64
RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient f ––– 62

Notes  through † are on page 9

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IRLB3813PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 11 ––– mV/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 1.60 1.95 mΩ VGS = 10V, ID = 60A e
––– 2.00 2.60 VGS = 4.5V, ID = 48A e
VGS(th) Gate Threshold Voltage 1.35 1.90 2.35 V VDS = VGS, ID = 150µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.8 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 140 ––– ––– S VDS = 15V, ID = 48A
Qg Total Gate Charge ––– 57 86
Qgs1 Pre-Vth Gate-to-Source Charge ––– 16 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 6.7 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 19 ––– ID = 48A
Qgodr Gate Charge Overdrive ––– 15 ––– See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd) ––– 25.7 –––
Qoss Output Charge ––– 35 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 0.87 1.3 Ω
td(on) Turn-On Delay Time ––– 36 ––– VDD = 15V, VGS = 4.5V e
tr Rise Time ––– 170 ––– ns ID = 48A
td(off) Turn-Off Delay Time ––– 33 ––– RG = 1.8Ω
tf Fall Time ––– 60 ––– See Fig. 14
Ciss Input Capacitance ––– 8420 ––– VGS = 0V
Coss Output Capacitance ––– 1620 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 650 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 520 mJ
IAR Avalanche Current c ––– 48 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 260 h MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 1050 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 48A, VGS = 0V e
trr Reverse Recovery Time ––– 24 36 ns TJ = 25°C, IF = 48A, VDD = 15V
Qrr Reverse Recovery Charge ––– 22 33 nC di/dt = 244A/µs e

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10000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
7.0V 7.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

5.5V 5.5V
4.5V 4.5V
4.0V 4.0V
1000 3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

100

3.0V
100
≤60µs PULSE WIDTH
Tj = 25°C
≤60µs PULSE WIDTH
3.0V Tj = 175°C
10 10
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
ID = 120A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

100 T J = 175°C
1.5
(Normalized)

10 T J = 25°C

1.0
1

VDS = 15V
≤60µs PULSE WIDTH
0.1 0.5
1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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 IRLB3813PbF

100000 14.0
VGS = 0V, f = 1 MHZ
ID= 48A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 12.0

VGS, Gate-to-Source Voltage (V)

VDS= 24V
C oss = C ds + C gd
VDS= 15V
10.0
C, Capacitance (pF)

10000 Ciss
8.0

Coss
6.0
1000
Crss
4.0

2.0

100 0.0
1 10 100 0 25 50 75 100 125 150
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000

OPERATION IN THIS AREA

T J = 175°C LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100 1000
100µsec
1msec
TJ = 25°C 100
10
10msec

1 10
Tc = 25°C
Tj = 175°C
VGS = 0V
Single Pulse
0.1 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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300 3.0

VGS(th) , Gate threshold Voltage (V)

250 Limited By Package 2.5
ID, Drain Current (A)

200 2.0

150 1.5 ID = 150µA

ID = 1.0mA
100 1.0 ID = 1.0A

50 0.5

0 0.0
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200
T C , Case Temperature (°C) TJ , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature

D = 0.50
Thermal Response ( Z thJC ) °C/W

0.1 0.20
0.10
0.05
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01 τJ 0.4985 0.004600
0.01 τJ
τC
τ
τ1 τ2
0.0022 8.246580
τ1 τ3 τ4
τ2 τ3 τ4 0.0001 6.149340
Ci= τi/Ri
Ci i/Ri
0.1392 0.000300
0.001 SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLB3813PbF
12 2200
RDS(on), Drain-to -Source On Resistance (m Ω)

ID

EAS , Single Pulse Avalanche Energy (mJ)

ID = 60A
2000
10 TOP 17A
1800 27A
1600 BOTTOM 48A
8
1400
1200
6
1000

T J = 125°C 800
4
600

2 400
TJ = 25°C 200
0 0
2 4 6 8 10 25 50 75 100 125 150 175

VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy
vs. Drain Current

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
VGS
tp 0.01Ω
I AS

Fig 13b. Unclamped Inductive Test Circuit Fig 13c. Unclamped Inductive Waveforms

RD
VDS VDS
90%
VGS
D.U.T.
RG
+
-V DD
10%
V GS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf

Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms

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 IRLB3813PbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Current Regulator
Same Type as D.U.T.
Id
Vds

50KΩ
Vgs
12V .2µF
.3µF

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID Qgodr Qgd Qgs2 Qgs1

Current Sampling Resistors

Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform

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IRLB3813PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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 IRLB3813PbF

TO-220AB Part Marking Information

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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.45mH, RG = 25Ω,
IAS = 48A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
… Rθ is measured at TJ approximately 90°C.
† Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 120A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
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