W.1 Y.COM W . WW 00Y.CO .

TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM DATA SHEET .1 M
WW 00Y.CO .TW W W W WW 00Y.CO .TW
W 00 .T W.1 Y.COM W
W .1
.C O M W W.1 Y.COM W W
WW .100Y MOS W FIELD 00 .T
W.1 YEFFECT TRANSISTOR
W W .100 M.T
W O M.T W W .C O W .C OM
W
W Y .C W W 00 Y .T W W 0 0 .T
W .100 M.T W.1 Y.COM W W.1 Y.COM W
W
WW .100Y
W
WW .100Y.C M.TW
.C O
O M .TW W
W
W
W W . 100
00Y
.C O M .T
.TW
W
W
W
W W .100
100
Y .
2SK2488
C OM
.T
.TW
W . 1 O M W . O M
W
WW .100Y.C M.TW
O
WW .100Y.C SWITCHING .TW WW .100Y.C M.TW
W O M W O
W
WW .100Y.C M.TW
O
WWN-CHANNEL 00 Y.C .T
POWERW WW FET
MOS . 1 0 0Y.C M.TW
W. 1 OM W CO
W
WW .100Y.C M.TW
O
WW .100INDUSTRIAL Y.C .T W USEWW .100Y. M.T
W
O W O M W . C O
W
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W DESCRIPTION.C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 Transistor .1 M
W.1The 2SK2488 C OMis N-Channel MOS Field W WEffect
.C OMdesigned WW 00DIMENSIONS
PACKAGE
Y .CO .TW
W . W 00 Y W W
W for.1high 00YvoltageMswitching .T W
applications.
W.1 Y.COM W
.T (in.1millimeter) M
W O
W .C O W W W 0 Y.C W
W W
. 1 00 Y
M .T W W
W . 10 0
O M .T
W .1 0
O M.T
W O WW .100Y. C
WW .100Y.C M.TW
FEATURES WW .100Y.C M.TW M
W
.TMAX.
4.7
W O 15.7 MAX. W 3.2±0.2 O
• Low
W On-Resistance O
WA)W .100Y.C M.TW WW .100Y.C 1.5 W

1.0
WWRDS (on) 0 0 Y.C .T W M.T
. 1 = 1.2 Ω (V M
GS = 10 V, I D = 5.0 W O W C O
W .CO .TW WW .100Y.C M.TW WW .100Y.
4
.TW

7.0
•W

20.0±0.2
W Low C1 iss00YCiss = 2 900 pF TYP. M
. M O W O

4.5±0.2
W
O WW .100Y.C M.TW

6.0
WWAvalanche
•WHigh
0 0 Y.C Capability .T WRatings WW .100Y.C M.TW
W. 1 OM W O
.C WW 00Y.CO .TW 1 2 3WW 0Y.C W
W W
. 1 0 Y
0MAXIMUM M
W
.TRATINGS (TA = 25W˚C) W . 1 O M W .1 0
O M.T
WW .100Y.C M.TW
ABSOLUTE W O
0Y.CV M.TW

19 MIN.
Y.C W

3.0±0.2
WtoWSource 0 0 .T W W . 1 0
Drain
W. 1 Voltage
.C OM V DSS 900
WW±30 00Y.C O
W W WW 00Y.CO .TW
to W Y W W .T
Gate W
100
Source Voltage
W.(DC) OM
.T V GSS
W .1 V
.C OM 2.2±0.2 W.1 2.8±0.1
W0.6±0.1 Y
M
.CO .TW
Drain Current W Y . C W I D W
(DC) W ±10 00 Y A .T W W
1.0±0.2
0 0
W
Drain Current W .100
(pulse)* OM
.T
ID (pulse) W±20 W.1 AY.COM 5.45W 5.45 W W.1 Y.COM W
.C
W W
.1 00Y (Tc = M TW
.˚C) W
W . 100W O M .T W 1. Gate
W .100 O M.T
Total Power Dissipation W .CO .TW
25 P 150 2. Drain
W .C
0Y.C M.TW
T1

Total Power WW Dissipation 00Y(TA = 25M˚C) PT2 WW 3.0 .10W

3. Source 100Y
W . M .TW
.1 W O
W O WW ˚C00Y.CO .TW 4.
WW .100Y.C M.TW
Fin (Drain)
WW .100Y.C M.TW Tch
Channel Temperature W150 .1 M
Storage Temperature W W . C O
W Tstg –55 W to W
W
+150 ˚C 0Y.C
O
W MP-88
W WW 00Y.CO .TW
W 00 Y .T .10 .T .1 M
Single Avalanche Current** W.1 Y.COM WIAS 10 WWA . C OM WW 00Y.CO .TW
W W 00 Y .T W Drain W
W
Single Avalanche Energy**
W .100 O M.T EAS 294 W.1 Y.COM W
mJ W W.1 Y.COM
W .C W W W 00 .T
* PW ≤ 10 µs, W Duty Cycle
W
Y
.10≤01 % OM.T
W
W .100 O M.T W W.1 Y.COM
.CVGS = 20 WW .100Y .C W Body W
** Starting Tch =W 25W ˚C, RG = 25
.100
YΩ,
M.T
WV→0
W O M.T Diode W .100 OM.T
W O .C W Y .C
WW .100Y.C M.TW WW .100YGate M .TW W .100 M
W W .C O W W Y .C O
W W W W
0 Y .CO
W 00 Y .T W W 0 0 .T .1 0
W.1 Y.COM W W W.1 Y.COM W WW
W W
W
W .100 O M.T
W
W .100 OM
.T
Source
C W .C W
WW .100Y. M.T
W W .100
Y
M.T
W O W C O
WW .100Y.C M.TW WW .100Y.
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
W O
WW .100Y.C
W
WW

Document No. D10284EJ1V0DS00 (1st edition)

Date Published August 1995 P
Printed in Japan
© 1995
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y .CO .TWCHARACTERISTICS
ELECTRICAL WW .100(T YA.C= 25 ˚C) .T W WW .100Y.C M.TW
OM M WW 00Y.CO .TW
W W Y .C W W W W
0 Y .CO .TW W
W 00 .T
CHARACTERISTIC 0
W.1 Y.COM W
SYMBOL MIN. TYP. MAX. UNIT .1 TESTM CONDITIONS
W W.1 Y.COM W W W WW 00Y.CO .TW
W 0 to Source
0Drain .T On-ResistanceW R 0
1 0 DS (on) .T 1.0 1.2 Ω .1 V = 10 V, M GS I = 5.0 A
D

OM Cutoff Voltage WWV.

W.1 GateY.toCSource .C OM W W Y .CO W
W .TW Y W W 0
.1V0 = 10 V,OI M = .1TmA
W . 1 00 M
W
W . 100 2.5
GS (off)

O M .T 3.5 V
W
DS

C
D

W O
.CTransfer WW | y .|100Y.C3.5 M.TW WW Y. W
WW .Forward1 00Y M .TW
Admittance fs S
W . 1 0 20 V, IO=M5.0.TA
V 0= DS D

WDrain Leakage O Current W O µAW V = VY.C

WW .100Y.C M.TW WWI .100Y.C M.TW 100
DSS
W .100
DS , V = 0 TW
DSS
.GS

W O W CO ±100 W
nA W V = ±30YV, .C OM
Gate to Source
WW .100Y. C Leakage Current
.TW W W
I GSS

1 00Y
.
M .TW W .100
GS V =0
M .TW
DS

W Capacitance O M C W . O W
pF WV = 10 V .C O
WW .100Y.C M.TW
Input 2 900
Y.C 00Y .TW
iss DS

WWOutput 0 .T W W . 1 M
1 0 M W O
W. Capacitance .CO .TW
C
WW 00Y.CO400 .TW
oss pF
WW .100Y.C M.TW
V =0 GS

WW 0 0 Y W . 1 M
Reverse.1Transfer Capacitance
WW Delay .CO .TW
M C
WW 00Y.CO .TW
rss 70 pF
W W MHz 00Y.CO .TW
f = 1W
Y W
WTurn-On
W
0
.10 TimeOM t d (on)
W.1 Y.C 35 M
O ns I = 5.0
D
W WA.1 Y.COM W
. C W W W 0
W W
Rise Time 00Y
. 1 M .TW t W r
W . 100 30 OM.T ns V = 10 V.10
GS
W O M.T
W O .C W Y. C
WW Delay
Turn-Off Y.C
00Time .TW t WW .100Y160
d (off)
M .TW ns VW= 150 V .100
DD
M .TW
. 1 M W O W .C O
Fall WW 00Y.CO .TW t
WTime f WW .10032 Y.C .TW ns R W = 10
G
WΩ
.1 00Y M.T
W
. 1 M W O M W C O
W
WW Charge
Total Gate .CO .TW Q WW .1090 0Y.C M.TWnC I = 10 WAW .100Y. .TW
00Y
G D

. 1 M W O W O M
W Charge O WW .C
WW .100Y.C M.TW
Gate to Source Q GS
WW .11600Y.C M.TW nC V = 450DD V
. 1 00Y M.T
W
Gate to Drain W O W O V = 10 V W
W .C O
WW .100Y.C M.TW WW .100Y.C M.TW Y .TW
Charge Q 40 nC
W 100
GD GS

W1.0 O W . O M
WW 00Y.CO .TW
I = 10 A, V W .C
WW .100Y.C M.TW
Body Diode Forward Voltage V V =0
00Y .TW
F (S-D) F GS

W W .1 M
. 1 M t O ns W O
Reverse Recovery Time
WW 00Y.CO .TW
rr

W WW 990
0 0 Y.C .T W
I = 10 A, V =W
F
W
GS0
1 0 0Y.C M.TW
W .1 Mµ di/dt = 50 A/µs . O
Reverse Recovery Charge
W.1 OM Q rr 7.0
W O C W
WW .100Y.C M.TW
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
Y W
Test Circuit 1 W
W
00
Avalanche.1Capability O M.T Test Circuit 2WSwitching W .1 Time
.C OM W W.1 Y.COM W
WW .100Y. C W
M.T
W W
W .100
Y
O M.T
W
W .100 OM
.T
W O Y. C W Y .C W
W
WD.U.T. .C
00Y L M.TW WW D.U.T. .100 M .TW W .100 M.T
. 1 W O W .C O
R = 25 Ω WW
G
.CO .TW WW .100Y.CR VM.TW L
V GS
WW90 % .100Y .TW
W .1 00Y M W O GS V
W O M
WW .100Y.C M.TW
GS (on)

W CO WPG. R =W10WΩ .100Y.C

R G Wave Form 10 %
VY. TW
0
PG 50 ΩWW 0 .T V .
1 0 DD G DD
M W O
V = 20 - 0 V
GS
W W. . C OM WW 00Y.CO I.TW 90 % WW D
0 Y.C .T
Y W W 0
W
W .100 O MV.T W .1
.C O M 90 %
W W.1 Y.COM
WBVW .100Y.C M WW .100Y I M.0T10W
I
TW
GS W10 % .100
D

M.T
0 .
DSS %
W O W D
O W W .C O
WW V .100Y.C M.TWt WW .100Y.C M.tTW t t Y
Wave Form
W .100
I AS
M
W .CO
I DS t
D
W C O W W .C O d (on) r

W
d (off)

Y
f

V DD
W Y . W W 0 0 Y .Tt W W .1 0 0
W 00 .T W.1 Y.COM W
t
W.1 Y.COt =M1 us W WW
on off

W W W
WStarting T .100
W ch M.T
Duty Cycle
O
≤1% W
W .100 OM
.T
C W . C W
WW .100Y. M.T
W W .100
Y
M.T
W O W C O
Test Circuit 3 Gate Charge
WW .100Y.C M.TW WW .100Y.
W O W
WW .100Y.C M.TW WW
D.U.T.
I = 2 mA G WR
WW 00Y.CO .TW
W.1 Y.COM
L

W W 00
PG. 50 Ω V DD
W W.1
W

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O
W O
WW .100Y(T
W .CAO= 25 .˚C) WW .100Y.C M.TW
WW .100Y.C TYPICAL .T W CHARACTERISTICS M T W
W W .C OM
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1
W.1 Y.COM DERATING FACTOR OF .1
WFORWARD C OM
BIAS
WW TOTAL OM DISSIPATION vs.
CPOWER
.TEMPERATURE
W W 00 .T W
SAFE OPERATING W W
AREA
1 0 0 Y .
M .T W W . 1 0 0
CASE Y
M .TW
W. 1 O M W . O W W .C O
WW .100Y.C M.TW
210 W
WW .100Y.C M.TW W 1 00Y M.T
dT - Percentage of Rated Power - %

W O W . O
W O WW .100Y. C

PT - Total Power Dissipation - W

WW .100Y.C M.TW
100
WW .100Y.C M.TW 180
M .TW
W O W O
W
WW .100Y.C80 M.TW
O
WW .100Y.C M.TW 150 WW .100Y.C M.TW
W W . C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W 120
.1 M
W.1 Y60.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W .100 40 OM.T W.1 Y.COM W
90
W .C W W.1 Y.COM W W
WW .100Y W W .100 M.T
W 00 .T
W O M.T W .C O 60
W W.1 Y.COM W
WW .10200Y.C M.TW WW .100Y M.T
W W .100 M.T
W O W O 30
W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M.T
W
20 O40 60 80 100 120 W W O W C O
. 120 .140
W 0 .C 40W 60 800Y TW160
WW .100Y.C M.TW W 140 160 00Y .TW 0 20 W 100
.1 M W . 10 O M
W O W O T -W .C- ˚C .TW
WW .100Y.C M.TW
T - Case Temperature - ˚C
WW .100Y.C M.TW W Case Temperature00Y
C C

.1 OM
W .C O WW 00Y.CO .TW W WW vs. 0 Y.C W
W W
. 1 0 Y
0FORWARD M
BIAS
W
.TSAFE OPERATING AREAW.1 W
O M
DRAIN CURRENT
DRAIN TO SOURCE W .1 VOLTAGEOM.T
0
W
WW100 .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
WW 00Y.CPulsed O
W W Y .C O
W
PW
W WW 00Y.CO .TW W 1 .TW
W . 1 00 M .TI = 10
0 WW
. 1 O M W .
.C OM
W O .C W
WW .100Y.eCd M.TW .TWV = 20 V W W.100Y OM.TW
D(pulse)
µs
W 1 00Y GS
ID - Drain Current - A

. ID - Drain Current - A
M
WW 00Y.CO .TW 108 VV WW
20
10 W it
WW .10Li0mYI.C M.TW 1 1 ms W
O
. 1 0 0Y.C M.TW
n)
D(DC)
W .1 O M 6V W O
W OP
WW .100Y.C M.TW WW .100Y.C M.TW
(o
0
WW R .100Y.C owM
DS
er .T 00
W 1 m
s
W W .C O Dis ms
W WW 00Y.C10O .TW W WW 00Y.CO .TW
Y W
.100 W.1 Y.COM W
s
1W M.Tpatioi .1 O M
W C O W W .C W W
WW .100Y. M.T imite
W
n
L W .100
Y
M.T
W
W .100 OM
.T
W O W C O W .C W
T W = 25W˚C 00Y
.C C
.TW d WW .100Y. M .TW W .100
Y
M.T
Single PulseW.1 O M W O W .C O
1
WW 10.100Y.C 100M.TW 1000 W
W 00Y
.C .TW WW 30 W.1 40
00Y M .TW
1
W . 1 0
O M 10 20 O
WVW
W
0
- Drain to0Source
O
Y.CVoltage .-TVW DS WW .100Y.C V M- .Drain TWto Source Voltage
DS
WW- V .100Y.C M.TW
W W. 1
.C OM
W WW 00Y.CO .TW W WW 00Y.CO .T
W 00 Y .T W .1 M
W.1 CHARACTERISTICS. C OM W W.1 Y.COM W WW 00Y.CO .T
FORWARD TRANSFERW Y W W 00 .T W
100
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM
.C W
T = –25 ˚C W W W .100
Pulsed
25W 00Y VM=.T
W 100 .T
A
. M M
˚C
75 ˚C WW
. 1
.C O 10 V DS
W W Y .C O
W W W W
0 Y.CO
W 00 Y .T W W 0 0 .T .1 0
125 ˚C
W.1 Y.COM W W.1 Y.COM W WW
ID - Drain Current - A

10 W
W W
W
W .100 O M.T
W
W .100 OM
.T
C W .C W
WW .100Y. M .TW W .100
Y
M.T
W O W C O
1.0
WW .100Y.C M.TW WW .100Y.
W O W
WW .100Y.C M.TW WW
W O
0.1
WW .100Y.C M.TW
W O
WW .100Y.C
0 10 W
WW
5 15
VGS - Gate to Source Voltage - V

3
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .TRANSIENT 00 Y.C THERMAL .T WRESISTANCEW vs.WPULSE WIDTH
. 1 0 0Y.C M.TW
1 M
W W .C O
W
1 000 WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW

rth(t) - Transient Thermal Resistance - ˚C/W

W W 0 0 .T W .1
W 00 .T 100 W.1 Y.COM W OM
W.1 Y.COM W W W WW R = 41.7
0 Y .C(˚C/W) W th(ch-a)

W W
. 1 00 M .T W
W . 100 O M .T W .10 O M.T
W O WW .100Y. C
WW .100Y.C M.TW10 WW .100Y.C M.TW M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
RWW O
W W Y .C O 1
W W WW 00Y.CO .TW W 1 0 0 Y.C
= 0.83 (˚C/W)
.TW
th(ch-c)

W . 1 00 M .T W . 1 O M W . O M
W
WW .100Y.C M0.1.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W .1
W
W .100 0.01 .T
O M W W.1 Y.COM W W WPulse Y .C OM
W
.C W Single 0
WW .100Y M .TW W
W . 100 O M .T T = 25W ˚C.1
0
O M.T
W O Y.C WW .100Y. C c

WW .100Y.C 10 µM.T100
0.001
Wµ WW10 m.100100 M 1.
TW 10 M .TW
1m m 100 W1 000 O
W O W
WW PW.-1Pulse .CO .TW WW .100Y.C M.TW
WW .100Y.C M.TW 00YWidth - M
WW 00Y.CO .TW
s
W W Y .C O
W W WW 00Y.CO .TW W
W 00 .T 1 M .1 OM
W.1 TRANSFER
FORWARD .C OM ADMITTANCE vs. WW. Y.C ODRAIN TOW SOURCE ON-STATE W W WRESISTANCE
0 Y .Cvs. W
W
W DRAIN.CURRENT00Y .TW W .100 M T SOURCE VOLTAGE
.TO .10 M.T
RDS(on) - Drain to Source On-State Resistance - Ω
1 GATE O
O M W O W .C
100 WW .C .TW VPulsed
W 00Y
.C .TW WW .10Pulsed 0Y .TW
W 00Y = 20 V W M
| yfs | - Forward Transfer Admittance - S

. 1 M W . 1 O M DS
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TIW = 10 A WW .100Y.C M.TW D

W W .C O
W WW 00Y.CO .TW52 AA W WW 00Y.CO .TW
WT = –25 ˚C 00 Y .T W .1 M
W˚C.1 Y.COM W W.1 1.0Y.COM W WW 00Y.CO .TW
A
10 25
W W W 00 .T W
W.1 Y.COM W
75 ˚C 00
W 125 .T
˚C .1
W .C OM W W.1 Y.COM W W
W W
.1 00Y M .TW W
W . 100 O M .T W
W .100 O M.T
W O .C WW .100Y. C
1 WW .100Y.C M.TW WW .0.5 1 00Y M .TW M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W . C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
Y W
0.1
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM W
.C W W 30 .100
0.1 W1.0 W
. 1 0010 Y
M
W
.T100 W 0 .100
W
10 .T
O M 20
W O M.T
W O W .C
WW Current
ID - Drain - A .C
00Y .TW WW .100VY.-CGate toMSource .TW Voltage - V W W.100Y OM.T GS

.1 M W O
W
WW ON-STATE .CO .TW WW GATE .C
0YSOURCE .TW VOLTAGE vs. WW .100Y.C M.T
DRAIN TO SOURCE 00Y . 1 0TO MCUTOFF
.1
W CURRENT O M W
WCHANNEL .CO .TW WW 00Y.CO
RDS(on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN C TEMPERATURE

W Y . W W 0 0 Y W 1
W 00 .T W.1 Y.COM W V = 10 V WW. 0Y.COM
W.1 VYPulsed OM
VGS(off) - Gate to Source Cutoff Voltage - V

W .C W W W
DS

W .100
= 10 V
M.T
W4
W .10 0
O M.T GS I = 1 mA
W .10 D

W O C W
WW .100Y.C M.TW WW .100Y. M .TW W
W O 3 WW
W .C O
1.0 WW .100Y.C M.TW . 1 00Y M.T
W
W O W C O
WW .100Y.C M.TW WW .100Y.
W O 2 W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW 1
0.5

W O
WW .100Y.C
0 W WW 0
1.0 10 100 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O SOURCEW
W Y.C
O vs. W
WW .100YFORWARD .CO TO.T
SOURCE DRAIN
W DIODE
WW .100Y.C M.TCHANNEL W
DRAIN
W TO TEMPERATURE W ON-STATE 0
RESISTANCE
0 .T
RDS(on) - Drain to Source On-State Resistance - Ω
M VOLTAGE
.1 M WW 00Y.CO .TW
W W Y.C O
W W WW 00Y.CO .TW W Pulsed
W .100 2.0.
T .1 M .1 OM
W O M W W .C O 100WW Y .C W
WW .100Y.C M.TW W

ISD - Diode Forward Current - A

W
W .100
Y
O M.T
W
W .100 OM
.T
W O C W .C W
WW .100Y.C M.TW WW .100Y. M .TW W .100
Y
M.T
W O W C O
W O
WW .100Y.C M.TW WW .100Y.
10
WW .100Y.C M.TW M .TW
W O W O
W
WW .100Y.C 1.0
O
.T W WW .100Y.C M.TW WW .100Y.C M.TW
OM VWW O
W W Y .C W W WW 00Y.CO .TW 1
W = 10 V
1 0 0 Y.C .TW
GS
W . 1 00 M .T W . 1 O M W . V =O 0M
V GS
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW Y .CO .TW 0.1 W WW 00Y.CO .TW
Y W V = 10 V 0
W 00 .T I = .51A0 W.1 Y.COM W
GS

W.1 0 Y–50 C OM 0 W W .C OM W0.5

D

W . W Y W 0 W .100 1.0OM.T 1.5

W .100 M.T
50 100 150
W
W .100 O M .T W O W W .C - V.TW
WW .100Y.C M.TW
T - Channel Temperature - ˚C
WW .100Y.C M.TW ch VW
00YVoltage M
- Source to Drain
. 1
SD

W O W O
W
WW .100Y.CCAPACITANCE
O
.T W vs. DRAIN TO WW .100Y.C M.TW WW .100Y.C M.TW
M VOLTAGE W O
W SOURCE
.CO .TW WW 00Y.CO 1.000 W
SWITCHING
WW .100Y.C M.TW
CHARACTERISTICS
WW 10 000 00Y W .1 M T
W.1 Y.COM W
V =0
f = 1 MHz WW 00Y.CO .TW WW 00Y.CO .TW
GS

td(on), tr, td(off), tf - Switching Time - ns

W W W .1
Ciss, Coss, Crss - Capacitance - pF

W 00 .T W.1 Y.COM W M
W W.1 Y.COM W C
W W WW 00Y.CO .TW
iss

W
W .100 O M.T
W
W .100 OM
.T
W W.1 Ytt .COM W r

C W .C W
WW .100Y.
1 000 d (off)
W W .100
Y 100
M.T
W 00 .T
W O M.T W .C O W W.1 ttY.COM W f

WW .100Y.C M.TW WW .100Y M .TW W .100 M.T

d (on)

W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M.T
W
100 W 10O W C O
W
WW .100Y.C M.TW
O C WW .100Y.C M.TW WW .100Y.
oss
M .TW
O W O W .C O
W
WW .100Y.C M.TW WW .100Y.C M.TW WW V .1=150 00VYV M.T
W DD

W O W
V =10 C O
Ω Y.
GS
10 WW 00Y.CO .TW C WW .1001.0 Y.C .TW1.0 WWR =10
rss
100 100 OM.T
W G

1.0 W .1
10 M
100 1 000 W 0.1 O M 10 W .
W O
Y.C Voltage.T- W
WVW- Drain.1to00Source V WW .100Y.C M.TI W WW .100Y.C M.TW
- Drain Current - A
OM WW 00Y.CO .TW
DS D

W W Y .C W W WW 00Y.CO .TW W
W 00 .T W.1 Y.COM W .1 M
W W.1 Y.COM W W W WW 00Y.CO .TW
W .100 M.T
W 00 .T W.1 Y.COM
W .C O W W.1 Y.COM W W
WW .100YTIME vs.M.TW W .100 M.T
W 00 .T
REVERSE RECOVERY
W O W .C O W W.1 Y.COM
WW .100Y.C M.TW
DRAIN CURRENT WW .DYNAMIC 100
Y INPUT/OUTPUT
M.T
W CHARACTERISTICS
W .100 M.T
W O W O W W .C O
WW800 .100Y.C M.TW
10 000
WW .100Y .C= 50 A/ µ s W
di/dt W 16
I = 10 A W.10
0Y
V = 0 M.T M
W 14 00Y.CO
D
W O W O GS
trr - Reverse Recovery time - ns

.C
VDS - Drain to Source Voltage - V

W Y .C W W W 0 Y .T W W
W 00 .T 0 W.1
VGS - Gate to Source Voltage - V
W.1 Y.COM W W
600 W.1 Y.COM W W12
W W
1 000 W .100 M.T
W .1V00= 300 450 V M.T VGS DD

W W Y .C O
W W W W
0 Y .CVVO .TW 10
W .1 00 M .T . 1 0 150
M
W O 400 WW .CO 8
WW .100Y.C M.TW W . 1 00Y
W O W 6
100
WW .100Y.C M.TW WW
W O 200 4
WW .100Y.C M.TW
W O 2
10 WW .100Y.C VDS
0
0.1 1.0 10 W 100
WW 0 30 60 90 120
ID - Drain Current - A Qg - Gate Charge - nC

5
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W O
WW .100Y.C M.TSINGLE W AVALANCHE
W WCURRENT 0 0 Y.C
vs.
.T W WW .SINGLE 1 0 0Y.C AVALANCHE
M .TW ENERGY
INDUCTIVE LOAD
W . 1 O M W O
DERATING FACTOR
C
W O W .
WW .100Y.C100 M.TW WW .100Y.C M.TW 160W
.100
Y W
M.TV = 150 V
W O W C O DD
W O
WW .100Y.C M.TW 140 WW Y. RW = 25 Ω
WW .100Y.C M.TW 100 .T
IAS - Single Avalanche Current - A

G
. M V = 20 V → 0

Energy Derating Factor - %

W O W O W W .C O GS
I ≤W
WW .100Y.C M.TW 120 W
10 A
WW .100Y10.C MI .T=W 00Y
AS

10 A .1 M .T
WW 00Y.CO .TW
AS
W O E W O
WW .100Y.C M.TW WW= 294.m100Y.C M.TW 100 W
AS

W O W J Y.CO W W.1 Y.COM W

.C W W
W .TW W .100 M.T
80
W . 1 00Y M
W
W . 100 O M .T W C O
W O WW .100Y .
WW .11.000Y.C M.TW WW .100Y.C M.TW 60 M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW40 WW .100Y.C M.TW
W W VV ==Y20 150 O
.C V
W
DD
WW 00Y.CO .TW 20 W WW 00Y.CO .TW
W 00 V → 0 .T W .1 M
W.1 Y.COM 0W
GS

W W0.1.1R = 25 Ω OM
.C W
G
W W WW 00Y.CO .TW
100 µ00Y W 100 m.100 .T 25 50 75 100
W
W .1 1 m .T
O M 10 m
W C OM W W.1 125Y.C150 OM
.
WW .100Y L - InductiveC
.TWLoad - H W W.100
W Y .
M
W W
.TStarting T - Starting Channel
ch 0
.10Temperature M .TW
- ˚C
M O W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W
W
W .100 O M.T
W
W .100 OM
.T
W W.1 Y.COM W
C W .C W
WW .100Y. M.T
W W .100
Y
M.T
W 00
W.1 Y.COM W
.T
W O W .C O W
WW .100Y.C M.TW WW .100Y M .TW W .100 M.T
W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M.T
W
W O W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM
.C W W 00 .T
WW .100Y M.T
W W .100 M.T W.1 Y.COM
W O W .C O W
WW .100Y.C M.TW WW .100Y M.T
W W .100 M.T
W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M
W W .C O W W Y.C O
W W W W
0 Y .CO
W 00 Y .TW W 0 0 .T .1 0
W.1 Y.COM W W W.1 Y.COM W WW
W W
W
W .100 O M.T
W
W .100 OM
.T
C W .C W
WW .100Y. M.T
W W .100
Y
M.T
W O W C O
WW .100Y.C M.TW WW .100Y.
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
W O
WW .100Y.C
W
WW

6
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W O
WW .100Y.C REFERENCE .T W WW .100Y.C M.TW WW .100Y.C M.TW
W W .C OM
W WW 00YDocument .CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W
Name Document No.
W W.1 Y.COM W W W WW 00Y.CO .TW
0
W reliability/quality .T system.
W 00 .T 0 W.1 Y.COM W
NEC semiconductor device control TEI-1202
W.1 Y.CQuality
OM grade on NEC semiconductor W W.1 Y.COM W W 0
W W W 0 .T
W .100 M.T
devices. IEI-1209
W
W .100 O M.T W . C O W W.1 Y.COM W
C W Y manual..TW
WW .100Y.Semiconductor M .TW
device mounting
W technology .100 M
W
W .100 O M.T
IEI-1207
W O W C O W .C W
WW .100Y.C M.TW
Semiconductor device packageW
W manual. Y. .TW W .100
Y
M.T
IEI-1213
W . 100 O M W C O
W GuideO
WW .100Y .
WW .100Y.C M.TW W
to quality assurance for semiconductor devices. MEI-1202
WW .100Y.C M.TW W O M .T
W O
W Semiconductor O
WW .100Y.C M.TW WW .100Y.C M.TW
selection guide. MF-1134
WW .10Power 0Y.CMOSMFET .TW W O
WW switching O supply.
WW .100Y.C M.TW
features and application power TEA-1034
W
WW .1Application .CO .TW 0 Y.C W
00Y W . 1 0 M .T
W M using Power MOSWFET.
circuits
.CO .TW W Y .CO .TW W WW 00Y.CO TEA-1035 .TW
WW Safe . 1 0 Y
0 operatingM area of Power MOS FET. W . 1 00 M W.1 O M
TEA-1037
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W
W
W .100 O M.T
W
W .100 OM
.T
W W.1 Y.COM W
C W .C W
WW .100Y. M.T
W W .100
Y
M.T
W 00
W.1 Y.COM W
.T
W O W .C O W
WW .100Y.C M.TW WW .100Y M .TW W .100 M.T
W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M.T
W
W O W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM
.C W W 00 .T
WW .100Y M.T
W W .100 M.T W.1 Y.COM
W O W .C O W
WW .100Y.C M.TW WW .100Y M.T
W W .100 M.T
W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M
W W .C O W W Y.C O
W W W W
0 Y .CO
W 00 Y .T W W 0 0 .T .1 0
W.1 Y.COM W W W.1 Y.COM W WW
W W
W
W .100 O M.T
W
W .100 OM
.T
C W .C W
WW .100Y. M.T
W W .100
Y
M.T
W O W C O
WW .100Y.C M.TW WW .100Y.
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
W O
WW .100Y.C
W
WW

7
 W.1 Y.COM W . WW 00Y.CO .TW
W WW 00Y.CO .TW W
.100 M.T W.1 Y.COM W .1 M
WW 00Y.CO .TW W W WW 00Y.CO .TW 2SK2488
W . 1 0 0 M .T . 1 M
W. 1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y .CO .TW
[MEMO] WW .100Y.C M.TW WW .100Y.C M.TW
W W .C OM
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 0 0 .T W .1
W 00 .T W.1 Y.COM W M
W W.1 Y.COM W W W WW 00Y.CO .TW
W
W .100 O M.T
W
W .100 OM
.T
W W.1 Y.COM W
C W . C W
WW .100Y. M.T
W W .100
Y
M.T
W
W .100 OM
.T
W O W C O W .C W
WW .100Y.C M.TW WW .100Y. M .TW W .100
Y
M.T
O W O W .C O
W
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM W
.C W
WW .100Y M .TW W
W . 100 O M .T W
W .100 O M.T
WWof this00document O may be copied or reproduced C form T W .C
NoWpart Y.C .TW WW .100inY.any M .orW by any means Wwithout . 00Y
1the prior written
M .TW
. 1 O M W no responsibility O W O
.C in this.TW
consent Wof NEC Corporation.
WW .100Y.C M.TW
NEC Corporation assumes
WW .100Y.C M.TW
for any errors which
WW may .1
appear
00Y M
document.
WW 00does O W W .CO of patents, Y .CO .TW
WorWother00intellectual
NECW Corporation Y.C not assume .T W any W
liability for 0
infringement
.10
Y .T W copyrights W 1 M
W.1of third
property rights OM by or arising from W
parties useW of a device .C OM
described herein or any other W W.liability Y .CO .TW
arising
W .C TW either W Y W W 0
10 patents,
W of such 0Y
.10device. M.license, 100 or Ootherwise,
.implied M.T W.any M
from use
W W .C O No express,
W W Y .C W
is granted under
W W 0Y .CO .TW
copyrights or other Y
intellectual W
property rights ofW NEC 0
Corporation or others.
.T 0
W
While NEC Corporation
00
W.1 has
.T
OMmaking continuous effort
been
0
Wto.1enhance .C OM
the reliability W
of its semiconductor W.1 devices, Y
M
.CO .TW
W .C W W Y W W 0
W of defects
the possibility
Y
.100 cannot Mbe .Teliminated W
entirely. W 00
To.1minimize O M.T
risks of damage or injury toWpersons .10 or OM
W .C O W Y .C W W 0 Y .C W
WW from.1a00defect
property arising Y in an.T
M
W semiconductor
NEC W device, .100customer M .T incorporateWsufficient
must
W .10safety O M.T
W O C
measures in itsW W such
design, .CasOredundancy, WW grades:
fire-containment,
.TW three quality
and Y
00
.C
anti-failure features.
.TW WW .100Y. .TW
NEC devicesW . 1
are classified00Yinto theMfollowing W .1 O M W O M
WW .and
“Standard“, “Special“,
W
0 Y.C
O
“Specific“. .TThe W Specific quality WW grade 0Y.C onlyMto.Tdevices
applies
0 W developed WW based .1 0Y.C M.TW
0on
0 . 1
a customer designated
1
WW“quality CO
M program“ for a specific
.assurance W WW application. O
Y.C The.Trecommended W WW 00Y.CO .TW
Wapplications
W 0 0 Y .T W 1 0 0 .1 M
of a device depend on its.1quality grade,
W C OMas indicated below. W W.
Customers must
. C OM check the quality grade ofW
W each
Y .CO .TW
W . W Y W W 0 0
device before using
W
00Y application.
W it in a.1particular
O M.Tcommunications W
W
W .100 Oand M.T W W.1 Y.COM W
Standard: Computers, office C
equipment, equipment, .C
test measurement equipment,
audioW
W 0Y. M.homeTW electronic W Y
.100 machine .TW personal W 00
W.1 Y.COM W
.T
and visual
W .10equipment, O appliances,
W .C O Mtools, electronic
W
WWand industrial
equipment .C
00Y robots .TW WW .100Y M .TW W .100 M.T
. 1 O M W O W .C O
Special: Transportation Wequipment
WW .10systems, 0Y.C safety
(automobiles,
.TW WW etc.),.1traffic
trains, ships,
00Y
.Ccontrol .systems,
TW WW .100Y
anti-disaster .T
systems, anti-crime W O M equipment and medicalW equipment
C O M
(not specifically designed W W .C OM
WW .100Y . Y
WW .100Y.C M.TW
for life support) M.T
W W
W .100 O M.T
W O W .C O W .C
WW .100Y.C
Specific: Aircrafts, aerospace equipment, submersible
M .TW WW nuclear
repeaters,
. 100
Yreactor
M .TW systems,Wlife W.100Y OM
control
W O
WW .100Y.C
support systems orWmedical equipment for life support, etc.
The quality grade of NEC devicesWW in “Standard“ 0 Y .COunless .T Wotherwise W W in NEC's
specified 0 0 C
Y.Data .
SheetsT Wor Data Books.
W.1 for
0
OM .1 OM WW
If customers intend to use NEC W devices Y .C
applications W other than those W WW specified
0 0 Y .CStandard
for
.T W
quality grade, W
W 0 0 .T .1 M
they should contact NEC Sales Representative
W W.1 Y.Cin OM advance.
W WW 00Y.CO .TW
Anti-radioactive design is notW 00 in this product. .T W
W.1 Y.COM
implemented
W W.1 Y.COM W W
W
W .100 O M.T
W
W .100 M4 94.11
W Y .C W W W
W 00 .T
W W.1 Y.COM W
W
W .100 O M.T
WW .100Y . C
W
WW