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FTA04N60D
N-Channel MOSFET Pb Lead Free Package and Finish
Applications:
• Adaptor VDSS RDS(ON) (Max.) ID
• Charger 600 V 2.2 : 4.0 A
• SMPS Standby Power
Features:
• RoHS Compliant D
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves G
Ordering Information G G
D D
S TO-220 S TO-220F
PART NUMBER PACKAGE BRAND S
Packages
FTP04N60D TO-220 FTP04N60D Not to Scale
FTA04N60D TO-220F FTA04N60D
Thermal Resistance
Symbol Parameter FTP04N60D FTA04N60D Units Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
RTJC Junction-to-Case 1.7 4.5 o
justed for a peak junction temperature of +150 C.
o
C/W
RTJA Junction-to-Ambient 62 100 1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd. Page 1 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
o
OFF Characteristics TJ=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 600 -- -- V VGS=0V, ID=250μA
o
BreakdownVoltage Temperature Reference to 25 C,
'BVDSS /' TJ -- 0.77 -- o
V/ C
Coefficient, Figure 11. ID=250μA
-- -- 25 VDS=600V, VGS=0V
IDSS Drain-to-Source Leakage Current μA
VDS=480V, VGS=0V
-- -- 250 o
TJ=125 C
Gate-to-Source Forward Leakage -- -- 100 VGS=+30V
IGSS nA
Gate-to-Source Reverse Leakage -- -- -100 VGS= -30V
©2010 InPower Semiconductor Co., Ltd. Page 2 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
o
Source-Drain Diode Characteristics Tc=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) -- -- 4 A Integral pn-diode
ISM Maximum Pulsed Current (Body Diode) -- -- 16 A in MOSFET
VSD Diode Forward Voltage -- -- 1.5 V IS=4A, VGS=0V
trr Reverse Recovery Time -- 89 133 ns VGS=0V
Qrr Reverse Recovery Charge -- 267 400 nC IF=4A, di/dt=100 A/μs
Notes:
©2010 InPower Semiconductor Co., Ltd. Page 3 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
1.000
50%
20%
ZTJC, Thermal Impedance
10%
0.100
5%
(Normalized)
2%
0.010 PDM
1%
t1
t2
0.001
NOTES:
single pulse DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZTJC x RTJC+TC
0.0001
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0
80 5
PD, Power Dissipation (W)
4
ID, Drain Current (A)
60
40
2
20
1
0.0
0
25 50 75 100 125 150 0 25 50 75 100 125 150
10 4.5
PULSE DURATION = 250 μS V PULSE DURATION = 10 μS
DUTY FACTOR = 0.5% = 15 DUTY FACTOR = 0.5% MAX
VGS
RDS(ON), Drain-to-Source
MAX, TC = 25 oC TC = 25 oC
VGS = 7.0V
ID, Drain Current (A)
ON Resistance (:
7.5
3.5
VGS = 6.5V
ID = 16A
5.0 ID = 8A
VGS = 6.0V ID = 4A
2.5 ID = 2A
2.5 VGS = 5.5V
VGS = 5.0V
0.0 1.5
0 5 10 15 20 25 30 4 6 8 10 12 14
VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)
©2010 InPower Semiconductor Co., Ltd. Page 4 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE FOR TEMPERATURES
MAY LIMIT CURRENT IN ABOVE 25 oC DERATE PEAK
THIS REGION CURRENT AS FOLLOWS:
, = , – 7 &-
--------------------
IDM, Peak Current (A)
10
VGS = 10V
1
10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0
10 100
PULSE DURATION = 10 μs
ID, Drain-to-Source Current (A)
VDS = 30 V
8
6
10
STARTING TJ = 25 oC
4
STARTING TJ = 150 oC
+150 oC
+25 oC
2 -55 oC If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If Rz 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0 1
7 4 5 6 7 1E-6 10E-6 100E-6 1E-3 10E-3
Resistance (Normalized)
TC=25°C 2.25
ON Resistance (:)
4.5 2.00
1.75
1.50
3.5
V = 15V
GS 1.25
1.00
2.5
0.75 PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
0.50 VGS = 10V, ID = 2.4 A
1.5 0.25
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150
©2010 InPower Semiconductor Co., Ltd. Page 5 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
Figure 11. Typical Breakdown Voltage vs Figure 12. Typical Threshold Voltage vs
Junction Temperature Junction Temperature
1.15 1.2
Breakdown Voltage (Normalized)
1.10
1.0
(Normalized)
1.05
0.9
0.8
1.00
0.7
0.95
VGS = 0V 0.6 VGS = VDS
ID = 250 μA ID = 250 μA
0.90 0.5
-75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
Figure 13. Maximum Forward Bias Safe Figure 14. Typical Capacitance vs
Operating Area Drain-to-Source Voltage
100 1000
10μs
Ciss
ID, Drain Current (A)
C, Capacitance (pF)
10 100
100μ
1ms
1.0 10
10ms
Coss
OPERATION IN THIS AREA VGS = 0V, f = 1MHz
DC 1.0
0.1 MAY BE LIMITED BY R Ciss = Cgs + Cgd
DS(ON) Crss
Coss # Cds + Cgd
TJ = MAX RATED
Crss = Cgd
TC = 25 oC 0.0
0.0
1 10 100 1000 0.1 1 10 100 1000
Figure 15. Typical Gate Charge Figure 16. Typical Body Diode Transfer
vs Gate-to-Source Voltage Characteristics
10
VGS, Gate-to-Source Voltage (V)
8
VDS = 150V
VDS = 300V
VDS = 450V
6
+150 oC
4
+25 oC
2
ID = 4A VGS = 0V
0
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
©2010 InPower Semiconductor Co., Ltd. Page 6 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
Test Circuits and Waveforms
VDS
ID
ID
VDS VGS
Miller
Region
VGS
VDD
D.U.T.
VGS(TH)
1 mA
Qgs Qgd
Qg
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform
VDS
RL 90%
VDS
VGS
VDD
RG D.U.T.
10%
VGS
Figure 19. Resistive Switching Test Circuit Figure 20. Resistive Switching Waveforms
©2010 InPower Semiconductor Co., Ltd. Page 7 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
Test Circuits and Waveforms
di/dt = 100A/μA
ID
Double Pulse
D.U.T. VDD
Qrr
L
trr
ID
BVDSS
Series Switch
(MOSFET)
L
IAS
BVDSS
VGS 50:
IAS
VGS tp
I AS 2 L
E AS
2
Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms
©2010 InPower Semiconductor Co., Ltd. Page 8 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010
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©2010 InPower Semiconductor Co., Ltd. Page 9 of 9 FTP04N60D/FTA04N60D REV. C. Jun. 2010