IKFW50N65DH5

TRENCHSTOPTM5AdvancedIsolation

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiodeinfullyisolatedpackage

FeaturesandBenefits: C

TRENCHSTOPTM5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage G
•LowgatechargeQG E
•Verysoft,fastrecoveryantiparalleldiode
•Maximumjunctiontemperature175°C
•2500VRMSelectricalisolation,50/60Hz,t=1min
•100%testedisolatedmountingsurface
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

PotentialApplications:
Fully isolated package TO-247

•ResidentialandCommercialAirconPFC
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters

ProductValidation:

Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKFW50N65DH5 650V 50A 1.8V 175°C K50EDH5 PG-HSIP247-3-2

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1

www.infineon.com 2019-07-08
IKFW50N65DH5

TRENCHSTOPTM5AdvancedIsolation

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Datasheet 2 V2.1
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IKFW50N65DH5

TRENCHSTOPTM5AdvancedIsolation

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
Th=25°C 59.0
IC A
Th=65°C 49.0
Th=65°C 69.01)
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A
Turn off safe operating area
- 160.0 A
VCE≤650V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
Th=25°C IF 40.0 A
Th=65°C 32.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±30
PowerdissipationTh=25°C 124.0
Ptot W
PowerdissipationTh=65°C 91.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3
IsolationvoltageRMS,f=50/60Hz,t=1min2) Visol 2500 V

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,3)
Rth(j-h) - 1.03 1.21 K/W
junction - heatsink
Diode thermal resistance,3)
Rth(j-h) - 1.64 1.93 K/W
junction - heatsink
Thermal resistance
Rth(j-a) - - 65 K/W
junction - ambient

1)
Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier
insulator
2)
For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3)
At force on body F = 500N, Th = 25ºC
Datasheet 3 V2.1
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TRENCHSTOPTM5AdvancedIsolation

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 650 - - V
VGE=15.0V,IC=50.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 1.80 2.25 V
Tvj=175°C - 2.25 -
VGE=0V,IF=25.0A
Diode forward voltage VF Tvj=25°C - 1.50 1.90 V
Tvj=175°C - 1.45 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40 µA
Tvj=175°C - - 4000
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 50.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2347 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 57 - pF
Reverse transfer capacitance Cres - 9 -
VCC=520V,IC=50.0A,
Gate charge QG - 95.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 23 - ns
Rise time tr VCC=400V,IC=50.0A, - 36 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.2Ω,RG(off)=12.2Ω, - 131 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 20 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.46 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.63 - mJ
Total switching energy Ets - 2.09 - mJ

DiodeCharacteristic,atTvj=25°C

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TRENCHSTOPTM5AdvancedIsolation

Diode reverse recovery time trr Tvj=25°C, - 68 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.55 - µC
IF=25.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 12.0 - A
Diode peak rate of fall of reverse
dirr/dt - -834 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) Tvj=150°C, - 21 - ns
Rise time tr VCC=400V,IC=50.0A, - 36 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.2Ω,RG(off)=12.2Ω, - 155 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 22 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.74 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.71 - mJ
Total switching energy Ets - 2.45 - mJ

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time trr Tvj=150°C, - 104 - ns

Diode reverse recovery charge Qrr VR=400V, - 1.43 - µC
IF=25.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 19.8 - A
Diode peak rate of fall of reverse
dirr/dt - -637 - A/µs
recoverycurrentduringtb

Datasheet 5 V2.1
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IKFW50N65DH5

TRENCHSTOPTM5AdvancedIsolation

140

100
120
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
not for linear use 100

10
80

60

1
40

20

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] Th,HEATSINKTEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofheatsink
(D=0,Th=25°C,Tj≤175°C,VGE=15V,tp≤1µs) temperature
(Tj≤175°C)

60 160

140 VGE=20V
50
18V

120 15V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

40 12V
100
10V

8V
30 80
7V

6V
60
20 5V

40

10
20

0 0
25 50 75 100 125 150 175 0 1 2 3 4 5
Th,HEATSINKTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofheatsink Figure 4. Typicaloutputcharacteristic
temperature (Tj=25°C)
(VGE≥15V,Tj≤175°C)

Datasheet 6 V2.1
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TRENCHSTOPTM5AdvancedIsolation

160 160
Tj=25°C
Tj=150°C
140 VGE=20V 140

18V

120 15V 120

IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
12V
100 100
10V

8V
80 80
7V

6V
60 60
5V

40 40

20 20

0 0
0 1 2 3 4 5 4 5 6 7 8 9 10
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tj=150°C) (VCE=20V)

3.00 1000
IC=25A td(off)
IC=50A tf
2.75 IC=75A td(on)
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

tr
2.50

2.25
t,SWITCHINGTIMES[ns]

100

2.00

1.75

1.50

10
1.25

1.00

0.75

0.50 1
25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160
Tj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (ind.load,Tj=150°C,VCE=400V,VGE=0/15V,
RG=12.2Ω,testcircuitinFig.E)
Datasheet 7 V2.1
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TRENCHSTOPTM5AdvancedIsolation

1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10

1 1
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
RG,GATERESISTOR[Ω] Tj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistor junctiontemperature
(ind.load,Tj=150°C,VCE=400V,VGE=0/15V, (ind.load,VCE=400V,VGE=0/15V,IC=50A,
IC=50A,testcircuitinFig.E) rG=12.2Ω,testcircuitinFig.E)

6.0 8
typ. Eoff
min. Eon
5.5
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max. 7 Ets

5.0
E,SWITCHINGENERGYLOSSES[mJ]

6
4.5

5
4.0

3.5 4

3.0
3

2.5
2
2.0

1
1.5

1.0 0
25 50 75 100 125 150 0 20 40 60 80 100 120
Tj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0.5mA) (ind.load,Tj=150°C,VCE=400V,VGE=0/15V,
RG=12.2Ω,testcircuitinFig.E)
Datasheet 8 V2.1
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TRENCHSTOPTM5AdvancedIsolation

6 3.5
Eoff Eoff
Eon Eon
Ets Ets
3.0
5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2.5
4

2.0

1.5

2
1.0

1
0.5

0 0.0
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
RG,GATERESISTOR[Ω] Tj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor functionofjunctiontemperature
(ind.load,Tj=150°C,VCE=400V,VGE=0/15V, (indload,VCE=400V,VGE=0/15V,IC=50A,
IC=50A,testcircuitinFig.E) RG=12.2Ω,testcircuitinFig.E)

3.0 16
Eoff 130V
Eon 520V
Ets 14
2.5
E,SWITCHINGENERGYLOSSES[mJ]

VGE,GATE-EMITTERVOLTAGE[V]

12

2.0
10

1.5 8

6
1.0

0.5
2

0.0 0
200 250 300 350 400 450 500 0 20 40 60 80 100
VCE,COLLECTOR-EMITTERVOLTAGE[V] QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=50A)
(ind.load,Tj=150°C,VGE=0/15V,IC=50A,
RG=12.2Ω,testcircuitinFig.E)
Datasheet 9 V2.1
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 IKFW50N65DH5

TRENCHSTOPTM5AdvancedIsolation

Cies
1E+4 Coes 1
Cres

Zth(j-h),TRANSIENTTHERMALIMPEDANCE[K/W]
D=0.5
0.2
1000
0.1
C,CAPACITANCE[pF]

0.05
0.1
0.02
0.01
100 single pulse

0.01

10

i: 1 2 3 4 5 6 7
ri[K/W]: 5.6E-3 0.17127 0.2189 0.22913 0.33902 0.20383 0.017292
τi[s]: 2.0E-5 2.9E-4 2.8E-3 0.023225 0.288506 1.294172 18.69894

1 0.001
0 10 20 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10
VCE,COLLECTOR-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. IGBTtransientthermalimpedanceasa
collector-emittervoltage functionofpulsewidth
(VGE=0V,f=1MHz) (D=tp/T)

250
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
Zth(j-h),TRANSIENTTHERMALIMPEDANCE[K/W]

200
D=0.5
trr,REVERSERECOVERYTIME[ns]

0.2
0.1
0.05
150
0.1 0.02
0.01
single pulse

100

0.01

50

i: 1 2 3 4 5 6
ri[K/W]: 0.341 0.56903 0.28633 0.34265 0.36597 0.023397
τi[s]: 2.2E-4 1.2E-3 0.0109174 0.1485143 0.7496137 15.94642

0.001 0
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 200 400 600 800 1000 1200
tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa Figure 20. Typicalreverserecoverytimeasafunction
functionofpulsewidth ofdiodecurrentslope
(D=tp/T) (VR=400V)

Datasheet 10 V2.1
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TRENCHSTOPTM5AdvancedIsolation

1.6 24
Tj=25°C, IF = 25A Tj=25°C, IF = 25A
Tj=150°C, IF = 25A Tj=150°C, IF = 25A
1.4 21
Qrr,REVERSERECOVERYCHARGE[µC]

Irr,REVERSERECOVERYCURRENT[A]
1.2 18

1.0 15

0.8 12

0.6 9

0.4 6

0.2 3

0.0 0
200 400 600 800 1000 1200 200 400 600 800 1000 1200
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

0 120
Tj=25°C, IF = 25A Tj=25°C
Tj=150°C, IF = 25A Tj=150°C
-100
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]

100
-200
IF,FORWARDCURRENT[A]

-300
80

-400

-500 60

-600

40
-700

-800
20

-900

-1000 0
200 400 600 800 1000 1200 0 1 2 3 4
diF/dt,DIODECURRENTSLOPE[A/µs] VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse Figure 24. Typicaldiodeforwardcurrentasafunction
recoverycurrentasafunctionofdiode offorwardvoltage
currentslope
(VR=400V)
Datasheet 11 V2.1
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IKFW50N65DH5

TRENCHSTOPTM5AdvancedIsolation

PG-HSIP247-3-2

MILLIMETERS MILLIMETERS
DIMENSIONS DIMENSIONS
MIN. MAX. MIN. MAX.
A - 5.18 e 5.44
A1 4.70 4.90 E 15.70 15.90
A2 2.16 2.66 E1 13.68 13.88
DOCUMENT NO.
A3 0.20 0.28 E2 (6.00)
Z8B00195711
A4 1.30 1.50 E3 3.24 3.44
A5 0.31 0.51 E4 4.39 4.59 REVISION
A6 1.70 1.90 E5 (1.45) 01
A7 (0.25) E6 0.76 0.96
b 1.10 1.30 L 18.01 18.21 SCALE 3:1
b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm
b2 (1.60) L2 1.50 1.70
b3 - 0.15 P 3.50 3.70
c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION
D 22.70 22.90 Q 6.06 6.26
D1 16.96 17.16
D2 2.34 2.54
D3 - 0.30
ISSUE DATE
D4 4.35 4.55
28.06.2019
D5 19.70 19.90

Datasheet 12 V2.1
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TRENCHSTOPTM5AdvancedIsolation

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 13 V2.1
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IKFW50N65DH5

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RevisionHistory
IKFW50N65DH5

Revision:2019-07-08,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2019-07-08 Final Data Sheet

Datasheet 14 V2.1
2019-07-08
Trademarks

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2019.
AllRightsReserved.

ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
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