PD - 95053A

IRFP3710PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
l 175°C Operating Temperature VDSS = 100V
l Fast Switching
l Fully Avalanche Rated RDS(on) = 0.025Ω
l Lead-Free G

Description ID = 57A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-247AC package is universally preferred for all

commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO- TO-247AC
247AC contribute to its wide acceptance throughout
the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
IDM Pulsed Drain Current  180
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 530 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

5/26/05
IRFP3710PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω V GS = 10V, ID = 28A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = V GS, ID = 250µA
gfs Forward Transconductance 20 ––– ––– S V DS = 25V, ID = 28A
––– ––– 25 V DS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 V DS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -20V
Qg Total Gate Charge ––– ––– 190 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 26 nC V DS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 82 V GS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 14 ––– V DD = 50V
tr Rise Time ––– 59 ––– ID = 28A
ns
td(off) Turn-Off Delay Time ––– 58 ––– RG = 2.5Ω
tf Fall Time ––– 48 ––– RD = 1.7Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 7.5 –––

and center of die contact S

Ciss Input Capacitance ––– 3000 ––– V GS = 0V

Coss Output Capacitance ––– 640 ––– pF V DS = 25V
Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 57
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 180

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
t rr Reverse Recovery Time ––– 210 320 ns TJ = 25°C, IF = 28A
Q rr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 28A. (See Figure 12)
ƒ ISD ≤ 28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS,
T J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
 IRFP3710PbF

1000 1000 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , Drain-to-Source Current (A)

I , Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V
10 4.5V 10

D
D

20µs PULSE WIDTH 20µs PULSE WIDTH

TC = 25°C TC = 175°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 46A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

TJ = 25°C
100 2.0
TJ = 175°C
(Normalized)

1.5

10 1.0

0.5

V DS = 50V
20µs PULSE WIDTH VGS = 10V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRFP3710PbF

6000 20
V GS = 0V, f = 1MHz I D = 28A
C iss = Cgs + C gd , Cds SHORTED V DS = 80V
C rss = C gd

V GS , Gate-to-Source Voltage (V)

5000 V DS = 50V
C oss = C ds + C gd 16 V DS = 20V
Ciss
C, Capacitance (pF)

4000
12

3000

Coss 8
2000

Crss 4
1000

FOR TEST CIRCUIT

SEE FIGURE 13
0 A 0 A
1 10 100 0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)

I D , Drain Current (A)

10µs
100 100

TJ = 175°C 100µs

TJ = 25°C
10 10 1ms

10ms
TC = 25°C
TJ = 175°C
VGS = 0V Single Pulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100 1000
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRFP3710PbF

60
RD
V DS

VGS
50 D.U.T.
RG
+
ID , Drain Current (A)

-VDD
40
10V
Pulse Width ≤ 1 µs
30 Duty Factor ≤ 0.1 %

20 Fig 10a. Switching Time Test Circuit

VDS
10
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFP3710PbF

1200
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 11A
20A
15V 1000 BOTTOM 28A

800
L DRIVER
VDS

600
RG D.U.T +
V
- DD
IAS A
20V 400
tp 0.01Ω

Fig 12a. Unclamped Inductive Test Circuit 200

VDD = 25V
0 A
25 50 75 100 125 150 175

V(BR)DSS Starting TJ , Junction Temperature (°C)

tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFP3710PbF

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRFP3710PbF

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

3.65 (.143) -D-

15.90 (.626) 3.55 (.140) 5.30 (.209)
15.30 (.602) 4.70 (.185)
0.25 (.010) M D B M
-B- -A- 2.50 (.089)
1.50 (.059)
5.50 (.217) 4

20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1 2 3 2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
-C- TO-247-AC.
14.80 (.583)
4.30 (.170)
14.20 (.559)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet IGBT
2.40 (.094) 1.40 (.056) 0.80 (.031) 1 -LEAD
GateASSIGNMENTS
1 - Gate
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 1
2 - Drain- GATE 2 - Collector
2X 2 - DRAIN
0.25 (.010) M C A S 2.60 (.102) 3 - Source 3 - Emitter
3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - Drain
4 - DRAIN4 - Collector
3.40 (.133)
2X 3.00 (.118)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY PART NUMBER
LOT CODE 5657 INT ERNATIONAL
ASSEMBLED ON WW 35, 2000 RECT IFIER IRFPE30

IN THE AS SEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/05
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/