Documente Academic
Documente Profesional
Documente Cultură
OMNIFET II
fully autoprotected Power MOSFET
Features
)
1 2
Current limitation (typ) ILIMH 5A 1
d u
■
■
Linear current limitation
r o
■
Thermal shutdown
Short circuit protection
e P
■ Integrated clamp
l e t
■ Low current drawn from input pin
s o ISOWATT200
SOT-82FM
■
Diagnostic feedback through input pin
Esd protection
O b
■ Direct access to the gate of the power mosfet
) - Description
(s
(analog driving)
ct
The VND5N07 is a monolithic device designed in
■ Compatible with standard Power MOSFET
STMicroelectronics VIPower M0 technology,
l e t environments.
Fault feedback can be detected by monitoring the
O b
Table 1. Device summary
Order codes
Package
Tube Tape and reel
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
)
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
( s
3
u ct
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1
o d
Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2
P r
Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3
t e
Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 17
e
3.4 l
Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
o
4 b s
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1
- O
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.2
(s )
DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3
c t
IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.4
d u
ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.5 r o
SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
e P
5
l e t
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
s o
O b
2/24
VND5N07 List of tables
List of tables
( s
IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20)
Table 12.
Table 13.
ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
u ct
SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 14.
d
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
o
P r
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
s o
O b
3/24
List of figures VND5N07
List of figures
( s )
Static Drain-Source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12.
Figure 13.
u ct
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static Drain-Source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 14.
d
Normalized on resistance Vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
o
Figure 15.
Figure 16.
P r
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static Drain-Source on resistance Vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 17.
Figure 18.
t e
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
e
Figure 19.
l
Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
o
Figure 20.
Figure 21.
b s
Input voltage Vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off Drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22.
Figure 23.
- O
Turn-off Drain-Source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 24.
Figure 25.
(s )
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 26.
c t
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 27.
Figure 28.
d u
Normalized on resistance Vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized Input threshold voltage Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 29.
r o
Normalized current limit Vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 30.
Figure 31.
e P
DPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
IPAK mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 32.
l
Figure 33. e t
ISOWATT220 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
SOT-82FM mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
s o
O b
4/24
VND5N07 Block diagram and pin description
( s )
u ct
o d
P r
e te
o l
b s
- O
(s )
c t
du
r o
e P
l e t
so
O b
5/24
Electrical specifications VND5N07
2 Electrical specifications
( s )
ct
Value Unit
Symbol Parameter
DPAK / IPAK ISOWATT220
d u SOT-82FM
r
V
VINn
IDn
Input voltage
Drain current
e P 18
Internally limited
V
A
IRn Reverse DC output current
l e t -7 A
Electrostatic discharge (R = 1.5KΩ,
o
bs
VESD 2000 V
C = 100pF)
Ptot
Tj
- O
Total dissipation at Tc = 25°C
Operating junction temperature
60 24
Internally limited
9 W
°C
)
t(s
Tc Case operating temperature Internally limited °C
Tstg
u c
Storage temperature -55 to 150 °C
o d
2.2 Thermal data
P r
e t e
Table 3. Thermal data
o l Symbol Parameter
Max. value Unit
O Rthj-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
3.75
100
5.2
62.5
14
100
°C/W
°C/W
6/24
VND5N07 Electrical specifications
Table 4. Off
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-Source clamp
VCLAMP VIN = 0V; ID = 200mA 60 70 80 V
voltage
Drain-Source
VCLTH VIN = 0V; ID = 2mA 55 V
threshold voltage
Supply current from
IISS
input pin
VDS = 0V; VIN = 10V 250 500
( s )µA
ct
Input-Source reverse
VINCL IIN = 1mA -1.0 -0.3 V
clamp voltage
Zero input voltage VDS = 13V; VIN = 0V;
d u 50 µA
IDSS drain current
(VIN=0V) VDS = 25V; VIN = 0V
r o 200 µA
e P
Table 5. On(1)
l e t
o
bs
Symbol Parameter Test conditions Min. Typ. Max. Unit
-O
Static Drain-Source VIN =10V; ID = 2.5A; 200
RDS(on) mΩ
on resistance VIN = 5V; ID = 2.5A 280
VIN(th)
Input threshold
ct
voltage
u
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
d
r o
e P
Table 6. Dynamic
let
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
so
gfs (1) VDS = 13V; ID = 2.5A 3 4 S
transconductance
7/24
Electrical specifications VND5N07
Table 7. Switching(1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
( s )ns
VDD = 15V; ID = 2.5A
t
uc
(dI/dt)on Turn-on current slope 80 A/µS
Vin = 10V; Rgen = 10Ω
Qi Total input charge VDD = 12V; ID = 2.5A; VIN = 10V
rod 18 nC
1. Parameters guaranteed by design / characterization.
e P
Table 8. Source Drain diode
l e t
Symbol Parameter
s o
Test conditions Min. Typ. Max. Unit
VSD(1)
trr (2)
Forward On voltage
Reverse recovery time
O b
ISD = 2.5A; VIN = 0V
150
1.6 V
ns
Qrr (2)
Reverse recovery
) -
(s
ISD = 2.5A; dI/dt = 100 A/µs 0.3 µC
charge
IRRM(2)
c
Reverse recoveryt VDD = 30V;
current
d u 5.7 A
o
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
r
P
2. Parameters guaranteed by design / characterization.
e
let
Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
8/24
VND5N07 Electrical specifications
( s )
u ct
o d
Figure 3. Test circuit for diode recovery times
P r
e t e
o l
bs
A
A
D
-O
I FAST L=100uH
OMNIFET DIODE
(S
s ) B
ct
B
330Ω
du
D
VDD
r o Rgen
I
e P OMNIFET
l e t Vgen
S
s o
Ob 8.5 Ω
9/24
Electrical specifications VND5N07
RGEN
VIN
( s )
PW
u ct
o d
P r
Figure 5. Input charge test circuit
e t e
o l
b s
- O
(s )
c t
d u
r o V IN GEN
e P
l e t
s o
O b
ND8003
10/24
VND5N07 Electrical specifications
( s )
u ct
o d
P r
e te
Figure 7. Switching waveforms
o l
b s
- O
(s )
c t
du
r o
e P
l e t
so
O b
11/24
Electrical specifications VND5N07
( s )
uct
o d
P r
e te
o l
b s
Figure 9.
O
Thermal impedance for DPAK / IPAK
-
(s )
c t
du
r o
e P
l e t
s o
O b
12/24
VND5N07 Electrical specifications
( s )
u ct
o d
Figure 12. Derating curve
P r
Figure 13. Static Drain-Source on
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
Figure 14. Normalized on resistance Vs Figure 15. Transconductance
s o temperature
O b
13/24
Electrical specifications VND5N07
Figure 16. Static Drain-Source on Figure 17. Switching time resistive load
resistance Vs. Id
( s )
u ct
o d
Figure 18. Turn-on current slope
(VIN = 10V)
P r
Figure 19. Turn-on current slope
(VIN = 5V)
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
Figure 20. Input voltage Vs. input Figure 21. Turn-off Drain Source voltage
s o charge slope
O b
14/24
VND5N07 Electrical specifications
( s )
u ct
o d
r
Figure 24. Switching time resistive load Figure 25. Step response current limit
P
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
Figure 26. Output characteristics Figure 27. Normalized on resistance Vs.
so temperature
O b
15/24
Electrical specifications VND5N07
Figure 28. Normalized Input threshold Figure 29. Normalized current limit Vs.
voltage Vs. temperature junction temperature
( s )
u ct
o d
P r
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
s o
O b
16/24
VND5N07 Protection features
3 Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS
flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
s o
is active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
b
lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
O
) -
(s
3.3 Overtemperature and short circuit protection
c t
These are based on sensing the chip temperature and are not dependent on the input
u
voltage. The location of the sensing element on the chip in the power stage area ensures
d
r o
fast, accurate detection of the junction temperature. Overtemperature cutout occurs at
minimum 150 °C. The device is automatically restarted when the chip temperature falls
P
below 135 °C .
e
l e t
3.4
s o Status feedback
O b In the case of an overtemperature fault condition, a Status Feedback is provided through the
Input pin. The internal protection circuit disconnects the input from the gate and connects it
instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by
monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
17/24
Package and packing information VND5N07
s o
O b
18/24
VND5N07 Package and packing information
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
B 0.64 0.90
B2 5.20 5.40
C 0.45 0.60
C2 0.48
(
0.60
s )
D 6.00
u ct
6.20
D1 5.1
o d
Pr
E 6.40 6.60
E1 4.7
e
e t e
2.28
G 4.40
ol 4.60
bs
H 9.35 10.10
-O
L2 0.8
L4 0.60 1.00
R
( s ) 0.2
V2
u ct 0° 8°
Package weight
o d Gr. 0.29
P r
e t e
o l
b s
O
19/24
Package and packing information VND5N07
( s )
uct
o d
P r
e te
o l
Table 11. IPAK mechanical data
b s
O
)-
mm
Symbol
t(s
Min. Typ. Max.
uc
A 2.2 2.4
od
A1 0.9 1.1
Pr
A3 0.7 1.3
B 0.64 0.9
e t e B2 5.2 5.4
o l B3 0.85
b s B5 0.3
O B6
C 0.45
0.95
0.6
C2 0.48 0.6
D 6 6.2
E 6.4 6.6
G 4.4 4.6
H 15.9 16.3
L 9 9.4
L1 0.8 1.2
L2 0.8 1
20/24
VND5N07 Package and packing information
( s )
u ct
o d
P r
e te
o l
b s
Table 12. O
ISOWATT220 mechanical data
-
Symbol
(s ) mm
o d 4.4 4.6
Pr
B 2.5 2.7
D 2.5 2.75
e t e E 0.4 0.7
o l F 0.75 1
b s F1 1.15 1.7
O F2
G
1.15
4.95
1.7
5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L6 15.9 16.4
L7 9 9.3
3 3.2
21/24
Package and packing information VND5N07
( s )
uct
o d
P r
e te
o l
b s
Table 13. SOT-82FM mechanical data
O
)-
mm
Symbol
A
u c 2.85 3.05
A1
o d 1.47 1.67
Pr
b 0.40 0.60
e t e b1
b2
1.4
1.3
1.6
1.5
s ol c 0.45 0.6
O b D
e
10.5
2.2
10.9
2.8
E 7.45 7.75
L 15.5 15.9
L 1 1.95 2.35
22/24
VND5N07 Revision history
5 Revision history
( s )
u ct
o d
P r
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
so
O b
( s )
u ct
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
o d
All ST products are sold pursuant to ST’s terms and conditions of sale.
P r
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
e t e
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
o l
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
s
third party products or services or any intellectual property contained therein.
b
- O
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
(s )
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
c t
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
d u
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
r o
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
P
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
e
e t
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
l
s o
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
O b
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.