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Programme : B.Sc. ECS Subject Code: 19ECU01 Q.P.

Code: 19QU020
Subject : Basic Electronics and Network Analysis Date : 04-11-19
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Answer Key

Section A
1. C. Maximum Energy
2. A. Conductors
3. both A and C are correct
4. B. Capacitance
5. A. Kirchoff’s Current law
6. D. 50%
7. A. Frequency
8. B. is zero in all the branches
9. D. N type Semiconductor
10. A. one PN Junction

Section B

11. a) (i) Insulators


 The electrical conductivity is small or nil. So that it is called as Insulator.
 A large amount of energy is required to shift
electrons from the valence band to the conduction
band.
 The valence band is full
 The conduction band is empty
 The Large forbidden energy gap ( > 6 eV )
 Have negative temperature co-efficient.

(ii) Conductors
• The materials which easily allow the flow of electric current through them are called
as conductors. Ex: Copper, Aluminium, etc.
• The free electrons in the conduction band are
responsible for the conduction of current.
• Plenty of free electrons are available in the
conduction band
• Overlapping valence and conduction bands
• No forbidden gap

b) ohm’s Law:
Ohm’s law states that the voltage or potential difference between two points is directly
proportional to the current or electricity passing through the resistance, and inversely
proportional to the resistance of the circuit. This relationship between current, voltage, and
relationship was discovered by German scientist Georg Simon Ohm.
The formula for Ohm’s law is
V=IR.
V= voltage, I= current and R= resistance
The SI unit of resistance is ohms and is denoted by Ω
This law is one of the most basic laws of electricity. It helps to calculate the power, efficiency,
current, voltage, and resistance of an element of an electrical circuit.

12. a) (i) Carbon Composition resistors


Carbon resistors are a cheap general purpose resistor used in the circuits. A typical fixed
resistor is made from the mixture of granulated or powdered carbon or graphite, insulation
filler, or a resin binder. The ratio of the insulation material determines the actual resistance
of the resistor.
The insulating powder (binder) made in the shape of rods and there are two metal caps on
the both ends of the rod. There are two conductor wires on the both ends of the resistor for
easy connectivity in the circuit via soldering. A plastic coat covers the rods with different
color codes (printed) which denote the resistance value. They are available in 1 ohm to 25
mega ohms and in power rating from ¼ watt to up to 5 Watts.

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(ii) Thick Film Resistors
• Thick film resistors is same like thin film resistors, but the difference is a thick film
instead of a thin film or layer of resistive material.
• Metal Oxide Resistors
• Cermet Film Resistors
Metal Oxide Resistors
• A thick film of Tin Chloride on a heated glass rod
(substrate) is to make a Metal Oxide Resistor.
• A wide range of resistance with high temperature
stability.
Cermet Film Resistors
• Thicker conductive paste of CERamic and METal,
called Cermet, onto an alumina ceramic substrate.
• Cermet resistors are generally used as SMD-Surface Mount Device on a PCBs.

b) Variable Capacitors
• The capacitors in which the capacitance value can be changed by varying the area between
the plates or by adjusting the spacing between them.
• The variable capacitor have a capacitance in PF
range.
• These capacitors are made by using air, mica,
ceramic or plastic as a dielectric
• Example: Ganged capacitors, Trimmers.

13. a) Super Position Theorem


In a Network containing two or more e.m.f sources, the current in any resistor is equals to the
algebraic sum of the individual currents in the resistor when sources are acted independently.
Steps:
1. Select any one source and replace all other sources by their internal resistance. (Voltage
source have internal resistance equal to zero, hence it replaced by open circuit. While the
current source having internal resistance equal to infinity,
hence current source is replaced by short circuit.)
2. Find out the current or voltage across the required element
3. Repeat the above steps for all other sources.
4. Add all the individual effects produced by individual sources
to obtain the total current in or voltage across the element.

b) Milman’s Theorem
• The Millman’s Theorem states that – when a number of voltage sources are in parallel
the arrangement can replace by a single equivalent voltage source V.
• In other words; it determines the voltage across the parallel branches of the circuit,
which have more than one voltage sources, i.e., reduces the complexity of the
electrical circuit.
• This Theorem is given by Jacob Millman. The utility of Millman’s Theorem is that the
number of parallel voltage sources can be reduced to one equivalent source.
• It is applicable only to solve the parallel branch with one resistance connected to one
voltage source or current source.

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14. a) (i) Peak Value: The maximum value attained by an alternating quantity during
one cycle is called its Peak value. It is also known as the maximum value or amplitude
or crest value.
(ii) Instantaneous Value
The instantaneous value is the value of an
alternating quantity (ac voltage, ac current or ac
power) at a particular instant of time in a cycle.
The instantaneous value of any variable quantity is
designated by the smaller case letter of its symbol. For
example, v for voltage, i for current, etc.
(iii) Frequency
 The number of cycle per second, made by an
alternating current. It is denoted as f in Hz. f = 1/T Hz

b) AC Response of RC Circuits
• The combination of a pure resistance R in ohms and pure capacitance C in Farads is called
RC circuit. The capacitor store energy and the resistor connect in series with the capacitor
control the charging and discharging of a capacitor. The RC circuit is used in camera flashes,
pacemaker, timing circuit etc. A circuit containing resistance and capacitance connected in
series together is called an RC series circuit.

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15. a) Intrinsic Semiconductors
Extremely pure form of semiconductor is known as an Intrinsic semiconductor.
At absolute temperature (0K), the intrinsic semiconductors are acts as insulators.

Extrinsic Semiconductor
The conductivity of semiconductors can be greatly improved by introducing a small number of
suitable replacement atoms called Impurities. The process of adding impurity atoms to the pure
semiconductor is called Doping. Usually, only 1 atom in 107 is replaced by a dopant atom in the doped
semiconductor. An extrinsic semiconductor can be further classified into:

 N-type Semiconductor
 P-type Semiconductor
N-Type Semiconductors
• The pure silicon is doped with a group-5 element
such as phosphorus, antimony, arsenic. These
materials have atoms with five valence electrons
(pentavalent atoms).
• Four of these electrons will form covalent bonds
with neighboring silicon atoms and the fifth
electron is not part of a covalent bond, and is
therefore a free electron.
• Every impurity atom will produce a free electron in
the conduction band. These electrons will drift to
produce an electrical current.

P-Type Semiconductors
• The pure silicon is doped with a group-3 element such as Boron, Aluminium,
Gallium. These materials have atoms with three valence electrons
(tritavalent atoms).
Three of these electrons will form covalent bonds with neighboring silicon atoms
and a hole is created in the valence band which will drift to conduct electric
current if a potential is applied

b) Zener Diode
• A Zener Diode is a special kind of diode which permits current to flow in the forward
direction as normal diode, It also permits the current to flow
in the reverse direction when the voltage is above a certain
value known as the breakdown voltage.
• Breakdown voltage is also known as Zener voltage.
• Zener diode is highly doped p-n junction diode.
• Zener Diodes are normally used only in the reverse bias
direction. Conventional diodes or rectifiers never operate in the breakdown region,
but the Zener diode can safely be operated at this point.
Applications
 Zener diode is used as a voltage regulator.
 Zener diode is used as a peak clipper in wave shaping circuits.
 Zener diode is used as a fixed reference voltage in transistor biasing circuits.

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Section C
16. a) Energy Bands
Energy band
a. The range of energies possessed by electrons in an atom is know as energy band.
b. The energy levels are separated by forbidden energy gaps where electron cannot
exist.
Valence Band:
• The electrons in the outermost orbit of an atom is called Valence electrons.
• The range of energy possessed by valence electrons is called as Valence band.
Conduction Band:
• The valence electrons loosely attached to the nucleus. These electrons easily left out
from valence orbit are called conduction electrons or free electrons.
The range of energy possessed by conduction electrons is called as Conduction band

b) Temperature Co-Efficient of Resistance


• Temperature coefficient of resistance indicates how much the resistance changes for
a change in temperature.
– It is indicated by the alpha symbol (α).A positive α value means R
increases with temperature. A negative α value means R decreases with
temperature. A value of 0 means R stays constant.
• α is generally positive for pure metals.
• α is generally negative for semiconductors (silicon, germanium) and
electrolyte solutions (sulfuric acid, water).
• The increase in resistance may be calculated using the formula:
Rt = R0 + R0(αΔt)
– R0 = the resistance at 20 °C.
– Rt = the resistance at the higher temperature
– Δt = the temperature rise over 20° C.

17. a) Classification of Resistors

b) different types of Capacitors

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18. a) Kirchhoff’s Law
Kirchhoff’s Law: A German physicist Gustav Kirchhoff developed two laws enabling easy
analysis of an interconnection of any number of circuit elements. The first law deals with the
flow of current and is popularly known as Kirchhoff’s Current Law (KCL) while the second
one deals with the voltage drop in a closed network and is known as Kirchhoff’s Voltage
Law (KVL).
Kirchhoff’s Current Law states that” the algebraic sum of all the currents at any node
point or a junction of a circuit is zero”.

Kirchhoff’s Current Law states that “The voltage around a loop equals to the sum of every
voltage drop in the same loop for any closed network and also equals to zero”.

b) Thevenin Theorem
Any Linear Electric Network or complex circuit with current and voltage sources can be
replaced by an equivalent circuit containing of a single independent voltage source VTH and a
Series Resistance RTH.

Norton Theorem
Norton’s Theorem stated as Any Linear Electric Network or complex circuit with Current and
Voltage sources can be replaced by an equivalent circuit containing of a single independent
Current Source INand a Parallel Resistance RN.

19. a) Average Value: The average value of an alternating current or voltage is the average of
ALL the Instantaneous values during the positive half cycle. It is denoted as Vav

Vav  0.637 Vm


Rms value: The steady (DC) current flowing through a given circuit for a given time, produces
the same heat as produced by an alternating current when flowing through the same circuit
for the same time. is known as effective value or virtual value of an alternating current. It is
denoted as Vrms or Irms

Vm
Vrms   0.707  Vm
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Form Factor: The ratio of the root mean square value to the average value of an alternating
quantity (current or voltage) is called Form Factor.

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Peak Factor: Peak Factor is defined as the ratio of maximum value to the R.M.S value
of an alternating quantity.

20. a) VI-Characteristics of PN Junction Diode


The VI characteristics is a graph between the voltage applied across the terminals of device and the
current flows through it. The VI graph can be
divided into two parts namely forward
characteristics and reverse characteristics.
Forward Characteristics
Forward bias of PN junction diode: The
positive terminal of voltage source is connected
to the anode (+) of diode and negative terminal
to the cathode (-).
Reverse Characteristics
Reverse bias of PN junction diode: The
positive terminal of voltage source connected
to the cathode of diode and negative terminal
to the anode.

b) Working of LED
The Light emitting diode is a two-lead semiconductor light source. In 1962, Nick Holonyak
has come up with an idea of light emitting diode, and he was working for the general electric
company. The LED is a special type of diode and they have similar electrical characteristics
of a PN junction diode. The LED allows the flow of current in the forward direction and blocks
the current in the reverse direction. It is a specially doped diode and made up of a special
type of semiconductors. When the light emits in the forward biased, then it is called as a light
emitting diode.
• The holes are present in the valance band and the free electrons are
in the conduction band.
• When a p-n junction is forward biased, the electron from n-type
semiconductor material cross the p-n junction and combine with the
holes in the p-type semiconductor material. Thus with respect to the
holes, the free electrons are at higher energy level.

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Prepared by: M. SELVAM/AP/ECS

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