Documente Academic
Documente Profesional
Documente Cultură
discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/276910961
CITATIONS READS
8 478
9 authors, including:
Jun Zhu
Shanxi University
75 PUBLICATIONS 203 CITATIONS
SEE PROFILE
Some of the authors of this publication are also working on these related projects:
Thin films and related devices in the area of new-type energy and environment View project
All content following this page was uploaded by Hao Lanzhong on 18 June 2015.
The user has requested enhancement of the downloaded file. All in-text references underlined in blue are added to the original document
and are linked to publications on ResearchGate, letting you access and read them immediately.
Electrical and photovoltaic characteristics of MoS2/Si p-n junctions
Lanzhong Hao, Yunjie Liu, Wei Gao, Zhide Han, Qingzhong Xue, Huizhong Zeng, Zhipeng Wu, Jun Zhu, and
Wanli Zhang
Scalable synthesis of layer-controlled WS2 and MoS2 sheets by sulfurization of thin metal films
Appl. Phys. Lett. 105, 083112 (2014); 10.1063/1.4893978
Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films
Appl. Phys. Lett. 104, 122104 (2014); 10.1063/1.4870067
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
Appl. Phys. Lett. 102, 193107 (2013); 10.1063/1.4804546
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
JOURNAL OF APPLIED PHYSICS 117, 114502 (2015)
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
114502-2 Hao et al. J. Appl. Phys. 117, 114502 (2015)
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
114502-3 Hao et al. J. Appl. Phys. 117, 114502 (2015)
FIG. 4. AFM surface morphology of the MoS2 thin film grown on the Si
substrate.
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
114502-4 Hao et al. J. Appl. Phys. 117, 114502 (2015)
According to the measured results, the fabricated device has 0.35 V. According to schematic illustration of the electrical
an open-circuit voltage (VOC) of 0.14 V and a short-circuit measurement, it can be determined that the built-in electrical
current density (JSC) of 3.2 mA cm2. The fill factor and field points from the MoS2 film to Si.
power conversion efficiency were calculated to be 42.4%
and 1.3%, respectively.
Time dependence of the short-circuit current density of
the fabricated solar device with light on and off is shown in
Fig. 7(a). When the light-on and light-off conditions are
switched alternately, two distinct current states for the device
are shown, the ‘‘low’’ current state in the dark and the ‘‘high’’
current state in the light. The open-circuit voltage shows simi-
lar dependence with the short-circuit current density, as shown
Fig. 7(b). Figs. 7(c) and 7(d) show the rising and falling edges
of the open circuit voltage in a period, respectively. From the
figures, we can see that the “ON” and “OFF” states are steady,
and the variation between two states is fast (40.0 ms) and
well reversible. These characteristics are similar with the
reported results about MoS2/a-Si heterojunction.21 This make
it possible for the device to act as a photosensitive resistor.
Using the data from the UV spectra of the MoS2 film,
the (ah)2 was plotted as a function of photon energy h, as
shown in Fig. 8(a), wherein h is the Planck constant and is
photon frequency. The a is the absorption coefficient, calcu-
lated by ad ¼ ln(1/T), d and T are thickness and transmittance
of films, respectively.22 The band gap (Eg) of the film can be
obtained by intercept of the line on h axis. From the figure,
Eg ¼ 1.45 eV. The obtained energy-band value for the film is
little larger than MoS2 bulk (1.2 eV) and much smaller
than the monolayer (1.9 eV). According the measured C-V
curve in the reverse voltage range, the plot of C3 versus
reverse voltages is shown in Fig. 8(b). The linear C3 versus
V dependence demonstrates that the fabricated MoS2/Si junc-
tion is graded.23 According to the intercept on voltage axis, FIG. 8. (a) Plot of (ah)2 versus h for the MoS2 film. (b) C3 versus reverse
the built-in electrical field (Vbi) can be obtained, about voltages curve.
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
114502-5 Hao et al. J. Appl. Phys. 117, 114502 (2015)
The observed electrical and photovoltaic characteristics Based on the extracted Vbi, the Fermi energy level of the
can be explained by considering the energy-band diagram of MoS2 film (EF1) can be determined by Vbi ¼ EF2 EF1,19,24
the MoS2/Si junction. Fig. 9(a) shows the energy band dia- about 4.65 eV. This value is in accord with the reported
gram of isolated MoS2 and p-Si. As shown in Fig. 8(a), the results.25,28 Then, the values of electron affinity (w) for the
energy-band gap of the MoS2 thin film (Eg1) is 1.45 eV. The MoS2 film and p-Si can be calculated, w1 ¼ 3.92 eV and
Hall Effect measurements show that the as-grown MoS2 w2 ¼ 4.08 eV. Furthermore, the conduction band offset is
films is a quasi-intrinsic semiconductor with a very small DEC ¼ w1 w2 ¼ 0.16 eV and the valence band offset is
Hall coefficient (0). Due to the narrow band gap nature and DEV ¼ [w1 þ Eg1] [w2 þ Eg2] ¼ 0.17 eV. The barrier heights
the existence of thermal emitted electrons, it is reasonable to for electrons and holes in the p-n heterojunction should take
assume that the as-grown MoS2 thin films are n-type semi- account of the band offsets. Therefore, the barrier heights for
conductors. Thus, the Fermi energy level of the MoS2 film electrons and holes are 0.19 and 0.52 eV, respectively.
(EF1) is close to (but above) the middle of the energy band Typically, if the barrier height for holes is 0.2 eV larger than
gap. For the p-Si used in our experiments, the Fermi energy that for electrons, the electron current will be approximately a
level [EF2 ¼ 5.0 eV] and energy band gap [Eg2 ¼ 1.12 eV] are factor of 104 larger than the hole current.29 Thus, in our case,
taken to construct the band structure and the difference the current is dominated by the electrons. Therefore, the ideal
(EF2-EV2) between the Fermi energy level and the top of the turn-on voltage should be 0.2 V. Within the precision level of
valence band is about 0.2 eV.24 When n-MoS2 films are de- the measurement, this value is almost same with the value
posited on the surface of p-Si, the electrons will flow from evaluated from the J-V curve of the p-n junction.
MoS2 into Si at the interface due to the higher Fermi energy
level of the MoS2. The flowing process stops when Fermi IV. CONCLUSION
levels are equal and a MoS2/Si p-n junction is fabricated, as
Bulk-like MoS2 thin films were deposited on the surface of
shown in Fig. 9(b). Thus, asymmetric characteristics and
p-type Si substrates using dc magnetron sputtering technique
obvious rectifying effect can be observed from the J-V curve
and MoS2/Si p-n junctions were formed. The p-n junction
in Fig. 5(a). As a result of electrons flowing, a built-in elec-
exhibited obvious rectifying characteristics with a turn-on volt-
trical field is formed near the interface, as illustrated in Fig.
age of 0.2 V. In different voltage range, the electrical transport-
8(b). Under illumination, the incident photons generate the
ing of the junction was dominated by diffusion current and
electron-hole (e-h) pairs in the MoS2 film and the Si. The
recombination current, respectively. Under the light illumina-
built-in electric field can effectively facilitate the separation
tion of 15 mW cm2, the p-n junction exhibited obvious photo-
of photo-generated e-h pairs, transporting separated electrons
from Si to MoS2 and holes towards Si. The processes of voltaic characteristics, JSC ¼ 3.2 mA cm2, VOC ¼ 0.14 V,
photo-excitation and carrier transport in the MoS2/Si p-n FF ¼ 42.4%, and g ¼ 1.3%. The mechanisms of the electrical
junction are demonstrated in Fig. 9(b). Therefore, obvious and photovoltaic characteristics were proposed in terms of the
photovoltaic characteristics are resulted in the p-n junction. energy-band structure of the MoS2/Si p-n junctions. The results
From Fig. 6, the open-circuit voltage is 0.14 V which is demonstrated that MoS2/Si p-n junctions have large potential
smaller than the reported values.9,10,25 As is well known that application in the area of photovoltaic devices.
the VOC depends on the build-in field near the interface.26
ACKNOWLEDGMENTS
The Vbi of 0.35 V in the MoS2/Si p-n junction is smaller than
the reported Au/MoS2 Schottky junction and monolayer The authors acknowledge the financial support by the
MoS2 p-n junction. In order to enhance the VOC and improve Fundamental Research Funds for the Central Universities
the photovoltaic properties, some effective routes should be (14CX05038A and 13CX02018A) and the National Natural
employed in future, such as incorporation of interfacial Science Foundation of China (Grant No. 51102284 and
layers with high work function.27 51372030).
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
114502-6 Hao et al. J. Appl. Phys. 117, 114502 (2015)
1 14
J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. F. Bulbul, I. Efeoglu, and E. Arslan, Appl. Surf. Sci. 253, 4415–4419
Young, A. Gaucher, S. De, R. J. Smith, I. V. Shvets, S. K. Arora, G. (2007).
15
Stanton, H. Y. Kim, K. Lee, G. T. Kim, G. S. Duesberg, T. Hallam, J. J. S. K. Kim and B. C. Cha, Surf. Coat. Tech. 188–189, 174–178 (2004).
16
Boland, J. J. Wang, J. F. Donegan, J. C. Grunlan, G. Moriarty, A. Shmeliov, D. J. Late, P. A. Shaikh, R. Khare, R. V. Kashid, M. Chaudhary, M. A.
R. J. Nicholls, J. M. Perkins, E. M. Grieveson, K. Theuwissen, D. W. More, and S. B. Ogale, ACS Appl. Mater. Interfaces 6, 15881–15888
McComb, P. D. Nellist, and V. Nicolosi, Science 331, 568–571 (2011). (2014).
2 17
D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. Ramakrishna Matte, M. J. Sheng, K. Fan, D. Wang, C. Han, J. Fang, P. Gao, and J. Ye, ACS Appl.
Grayson, C. N. R. Rao, and V. P. Dravid, Adv. Mater. 24, 3549–3554 Mater. Interfaces 6, 16027–16034 (2014).
18
(2012). D. A. Neamen, Semiconductor Physics and Devices: Basic Principles
3
Y. Yoon, K. Ganapathi, and S. Salahuddin, Nano Lett. 11, 3768–3773 (McGraw-Hill, New York, 2003).
19
(2011). S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed.
4
Q. Q. Ji, Y. F. Zhang, T. Gao, Y. Zhang, D. L. Ma, M. X. Liu, Y. B. Chen, (Wiley, New York, 2007).
20
X. F. Qiao, P. H. Tan, M. Kan, J. Feng, Q. Sun, and Z. F. Liu, Nano Lett. W. Du, M. Baba, K. Toko, K. O. Hara, K. Watanabe, T. Sekiguchi, N.
13, 3870–3877 (2013). Usami, and T. Suemasu, J. Appl. Phys. 115, 223701 (2014).
5 21
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, M. R. Esmaeili-Rad and S. Salahuddin, Sci. Rep. 3, 2345 (2013).
22
136805 (2010). X. Chen, K. Ruan, G. Wu, and D. Bao, Appl. Phys. Lett. 93, 112112
6
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. (2008).
23
Nanotechnol. 6, 147–150 (2011). H. Huang, G. Fang, X. Mo, L. Yuan, H. Zhou, M. Wang, H. Xiao, and X.
7
Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, and G. Lu, ACS Nano 6, Zhao, Appl. Phys. Lett. 94, 063512 (2009).
24
74–80 (2012). S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, NJ,
8
M. Bernardi, M. Palummo, and J. C. Grossman, Nano Lett. 13, 3664–3670 1985).
25
(2013). M. Shanmugam, C. A. Durcan, and B. Yu, Nanoscale 4, 7399–7405
9
M. M. Furchi, A. Pospischil, F. Libisch, J. Burgd€ orfer, and T. Mueller, (2012).
26
Nano Lett. 14, 4785–4791 (2014). J. Shewchun, J. Dubow, A. Myszkowski, and R. Singh, J. Appl. Phys. 49,
10
S. Wi, H. Kim, M. Chen, H. Nam, L. J. Guo, E. Meyhofer, and X. Liang, 855–864 (1978).
27
ACS Nano 8, 5270–5281 (2014). M. Ma, Q. Xue, H. Chen, X. Zhou, D. Xia, C. Lv, and J. Xie, Appl. Phys.
11
M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Lett. 97, 061902 (2010).
28
Li, L. J. Chen, and J. H. He, ACS Nano 8, 8317–8322 (2014). M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape,
12
R. Cheng, D. Li, H. Zhou, C. Wang, A. Yin, S. Jiang, Y. Liu, Y. Chen, Y. and P. Barbara, Sci. Rep. 3, 1634 (2013).
29
Huang, and X. Duan, Nano Lett. 14, 5590–5597 (2014). H. Yang, H. M. Luo, H. Wang, I. O. Usov, N. A. Suvorova, M. Jain, D. M.
13
S. Sutar, P. Agnihotri, E. Comfort, T. Taniguchi, K. Watanabe, and J U. Feldmann, P. C. Dowden, R. F. DePaula, and Q. X. Jia, Appl. Phys. Lett.
Lee, Appl. Phys. Lett. 104, 122104 (2014). 92, 102113 (2008).
[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.194.155.230 On: Sat, 21 Mar 2015 04:59:20
View publication stats