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Electrical and photovoltaic characteristics of


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Electrical and photovoltaic characteristics of MoS2/Si p-n junctions
Lanzhong Hao, Yunjie Liu, Wei Gao, Zhide Han, Qingzhong Xue, Huizhong Zeng, Zhipeng Wu, Jun Zhu, and
Wanli Zhang

Citation: Journal of Applied Physics 117, 114502 (2015); doi: 10.1063/1.4915951


View online: http://dx.doi.org/10.1063/1.4915951
View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/117/11?ver=pdfcov
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JOURNAL OF APPLIED PHYSICS 117, 114502 (2015)

Electrical and photovoltaic characteristics of MoS2/Si p-n junctions


Lanzhong Hao,1,a) Yunjie Liu,1,b) Wei Gao,1 Zhide Han,1 Qingzhong Xue,1 Huizhong Zeng,2
Zhipeng Wu,2 Jun Zhu,2 and Wanli Zhang2
1
College of Science, China University of Petroleum, Qingdao, Shandong 266580, People’s Republic of China
2
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science
and Technology of China, Chengdu 610054, People’s Republic of China
(Received 10 January 2015; accepted 11 March 2015; published online 20 March 2015)
Bulk-like molybdenum disulfide (MoS2) thin films were deposited on the surface of p-type Si
substrates using dc magnetron sputtering technique and MoS2/Si p-n junctions were formed. The
vibrating modes of E12g and A1g were observed from the Raman spectrum of the MoS2 films. The
current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V
rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical
transporting of the junction was dominated by diffusion current and recombination current, respec-
tively. Under the light illumination of 15 mW cm2, the p-n junction exhibited obvious photovol-
taic characteristics with a short-circuit current density of 3.2 mA cm2 and open-circuit voltage of
0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively.
According to the determination of the Fermi-energy level (4.65 eV) and energy-band gap
(1.45 eV) of the MoS2 films by capacitance-voltage curve and ultraviolet-visible transmission
spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms
of the energy-band structure of the MoS2/Si p-n junctions. The results hold the promise for the inte-
gration of MoS2 thin films with commercially available Si-based electronics in high-efficient pho-
tovoltaic devices. VC 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4915951]

I. INTRODUCTION utilized the plasma-induced p-doping approach to form p-n


junctions in MoS2 layers.10 The results demonstrated that the
Structurally, molybdenum disulfide (MoS2) has a crystal
fabricated p-n junctions showed good photovoltaic character-
structure consisting of sandwich layers of S-Mo-S, where a
istics with high short-circuit photocurrent density up to
Mo-atom layer is enclosed within two S-atom layers and the
20.9 mA cm2 and good power-conversion efficiencies up to
atoms in layers are hexagonally packed, as shown in Fig. 1.
2.8%. Recently, Tsai et al. realized the enhancement of the
These layers are held together by van der Waals interaction.
power conversion efficiency of Si-based Schottky-type solar
The weak van der Waals interaction make it easy for MoS2-
devices from 4.64% to 5.23% by the incorporation of mono-
based materials to be exfoliated into monolayers.1 Due to its
layer MoS2 into the Al/p-Si interface.11 All these results
good electrical, mechanical, and optical properties, mono-
fully prove that MoS2 has large potential application in the
layer MoS2 has become one of good candidates to develop
area of solar cells. However, due to the difficulties in fabri-
next-generation microelectronic devices and optoelectronic
cating large-scale continuous uniform monolayer MoS2, the
devices.2–4 Unlike graphene, monolayer MoS2 is a n-type
development of monolayer MoS2 solar devices is limited.
semiconductor with a direct band gap of 1.9 eV and the
Comparatively, from the point of view of fabrication, appli-
band gap decreases with increasing the layer numbers.5 The
cation, and physics, bulk-like MoS2 thin films have three
presence of a band gap allows fabrication of MoS2 transistors
advantages in the area of solar cells. First, it is easier to form
with an on/off ratio exceeding 108 and photodetectors with
large-scale uniform MoS2 thin films on different kinds of
high responsivity.6,7 It has been reported that the MoS2-
substrates using magnetron sputtering technique and pulse
based materials can absorb up to 5%–10% of incident sun-
laser deposition.14–16 Second, bulk-like MoS2 thin films have
light in a thickness of less than 1.0 nm and exhibit one order
a much smaller energy-band gap (1.2 eV) than the value of
of magnitude higher sunlight absorption than the most com-
the monolayer (1.9 eV). This can enhance the sunlight
monly used solar absorbers such as Si.8 Thus, MoS2 has
absorption of the fabricated devices. Especially, the excellent
attracted much interest in the area of solar cells. Most solar
electrical and optical properties of bulk-like MoS2 thin films
cell designs comprise a junction between adjoining materials
can be integrated easily with Si materials. Undoubtedly, Si
at which the separation of the photogenerated carriers occurs.
semiconductors are dominating the commercial photovoltaic
Recently, p-n and Schottky junctions have been realized in
market due to the high abundance and mature processing
MoS2-based materials.9–13 MoS2/WSe2 van der Waals heter-
technology. The integration of MoS2 on Si could lower
ojunctions were fabricated by Furchi et al. and the devices
largely the cost of the solar cells and multifunctional devices
showed an obvious photovoltaic effect.9 Further, Wi et al.
would be realized. Thus, it is important to form the hetero-
junction composed of bulk-like MoS2 thin films and Si, not
a)
Electronic mail: haolanzhong@upc.edu.cn only due to its large potential applications in solar cells but
b)
Electronic mail: liuyunjie@upc.edu.cn also due to the rich scientific topics, such as the interface

0021-8979/2015/117(11)/114502/6/$30.00 117, 114502-1 C 2015 AIP Publishing LLC


V

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114502-2 Hao et al. J. Appl. Phys. 117, 114502 (2015)

FIG. 2. Schematic illustration of the electrical measurement of the MoS2/Si


solar cell device.

ultraviolet-visible (UV) transmission spectra of the MoS2


films and the electrical characteristics of Pd/MoS2, the films
were also deposited on sapphire and transparent conducting
oxide (ITO) substrates under the same conditions with the
FIG. 1. (a) Structure of bulk MoS2 showing layered structure of material.
(b) Top view of MoS2 materials. Atom color code: light blue-green, Mo;
above.
yellow, S. Samples were characterized using Raman spectroscopy
(Renishaw, 514 nm laser). The surface morphology was
effect in nanoscale and evolution of electrical transporting characterized by atomic forced microscope (AFM, SPM-
mechanisms. However, the related studies on the fabrication 300HV, SEIKO). The current density versus voltage (J-V)
and photovoltaic characteristics of the heterojunctions com- curves were measured using Keithley2400 source meter. The
posed of bulk-like MoS2 thin films and Si are absent. capacitance-voltage (C-V) curves were measured using
Based on the above analysis, MoS2 thin films were HP4284 source meter. The transmission spectra were meas-
grown on p-type Si substrates using magnetron sputtering ured by Shimadzu UV-3150 spectrophotometer.
technique and the MoS2/Si p-n junctions were formed in this
study. The electrical characteristics of the fabricated junction
were investigated. The results demonstrated that the fabri- III. RESULTS AND DISCUSSION
cated junctions exhibited good rectifying and obvious photo- Figure 3 shows the Raman spectrum of the bulk-like
voltaic characteristics. According to the experimental MoS2 films on Si substrates. Besides the Raman peak of the
results, the mechanisms of the electrical and photovoltaic Si substrate at 520 cm1, two significant active modes of
characteristics of the p-n junction were proposed in terms of the as-grown MoS2 film were identified at 380 cm1 and
the energy-band alignments at the MoS2/Si interface. 405 cm1 which correspond to E12g mode and A1g mode,
respectively. In the E12g mode, both sulfur and molybdenum
II. EXPERIMENT
atoms vibrate along in-plane direction, whereas the sulfur
MoS2 thin films were grown on (100)-oriented Si sub- atoms vibrate in the perpendicular-to-plane direction in the
strates using dc magnetron sputtering technique. The MoS2 A1g mode, as shown in the insets. Our Raman results are
targets (purity, 99.9%) were cold-pressed. The Si substrates consistent with the reported results in the literature.16
used in this work are p-type semiconductors with the resis-
tivity in the range of 1.2–1.8 X cm. Before the deposition,
the substrates were ultrasonically cleaned in sequence by
using alcohol, acetone, and de-ionized water. Then, the sub-
strate was dipped into HF solution (5.0%) for 60 s to
remove the amorphous SiO2 layer from the silicon surface.
Subsequently, the Si substrate was immediately moved into
the vacuum chamber. Then, about 40-nm-thickness MoS2
thin films were deposited. The background of vacuum cham-
ber was 4  104 Pa. During the deposition, the working
pressure of argon gas was kept at 0.3 Pa. The deposition tem-
perature and sputtering power were about 380.0  C and
120.0 W, respectively. After the deposition, the top 30-nm-
thickness palladium (Pd) and backside indium (In) electrodes
were fabricated on MoS2 thin films and Si, respectively. The
schematic illustration of the p-n junction is shown in Fig. 2.
FIG. 3. Raman spectrum of the MoS2 films on Si substrates. The insets show
In this work, forward bias voltage is defined as a positive dc the schematic illustration the vibrating mode of E12g and A1g. Atom color
voltage applied on In electrode. In order to obtain the code: light blue-green, Mo; yellow, S.

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114502-3 Hao et al. J. Appl. Phys. 117, 114502 (2015)

FIG. 4. AFM surface morphology of the MoS2 thin film grown on the Si
substrate.

Figure 4 shows AFM topographic image of the MoS2


thin film grown on the Si substrate. As shown in the figure,
outgrowths are evident. The surface of the film is composed
of dense cone-like grains. According to the measurements,
the root-mean-square roughness (RMS) of the film is about
1.3 nm, and the average size of grains is about 79.4 nm in di-
ameter. The rough surface is important for the solar cell
devices because it can effectively decrease the reflection to
sunlight and improve the efficiency of photogenerated carrier
separation.17
Figure 5 shows the J-V curve of the Pd/MoS2/Si/In junc- FIG. 5. (a) J-V curve of the Pd/MoS2/Si/In junction. (b) Replot of the J-V
tion at room temperature. From the figure, obvious rectifying curve of the heterojunction in the forward voltage range using semi-
behavior is observed. The rectifying ratio (Iþ/I) measured logarithmic mode.
at 60.5 V is about 42. A turn-on voltage (Von) of 0.2 V,
where the current starts to increase quickly, can be obtained. estimated to be 8.0. This might be due to the series resistance
Besides the MoS2/p-Si junction, Schottky junctions are of the MoS2 film and the carrier trapping at the lattice defects
likely to be formed at the Pd/MoS2 and In/Si interfaces in caused by the large lattice difference between MoS2 and Si
heterostructure. The inset in Fig. 5(a) shows the J-V curves at the interface.20
of Pd/MoS2 and In/Si. From the figure, the linear characteris- Figure 6 shows the J-V characteristics of the fabricated
tics of the J-V curves for the Pd/MoS2 and In/Si are solar cell device under the dark and light illumination of
observed. Therefore, we can conclude that the rectifying J-V 15 mW cm2. The current density at a given voltage of the
characteristic in the device structure is attributed to the device under illumination is larger than that in the dark. This
MoS2/p-Si junction. The forward J-V characteristic of a het- indicates that light absorption in MoS2 and Si generates a
erojunction can be described by the exponential relation18 photocurrent due to the production of electron-hole pairs.

J / exp ðqV=nkTÞ; (1)

where q is the electron charge, n is the ideality factor, k is


the Boltzmann constant, and T is the temperature. In general
p-n junctions, the forward dark-current density constitutes
the diffusion current density caused by the diffusion of car-
riers in neutral regions and the recombination current density
inside space-charge regions near the interface.19 Fig. 5(b)
shows the replot of the J-V curve of the heterojunction in the
forward voltage range using semi-logarithmic mode. Three
distinctly different regions with different n (labeled I, II, and
III) can be observed. In the lower voltage range (0–0.04 V),
n is 1.0; the electrical transporting mechanism is dominated
by diffusion current in this range. When 0.05  V  0.28 V, n
is 2.0; this shows that the recombination current dominates
the conduction in this range. When the voltage is larger than
0.28 V, the obtained ideality factor is unusually high, FIG. 6. Photovoltaic characteristics of the MoS2/p-Si heterojunction.

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114502-4 Hao et al. J. Appl. Phys. 117, 114502 (2015)

FIG. 7. Time dependence of (a) JSC


and (b) VOC of the solar device with
light on and off. (c) and (d) Rising and
falling edges of VOC in the first period,
respectively.

According to the measured results, the fabricated device has 0.35 V. According to schematic illustration of the electrical
an open-circuit voltage (VOC) of 0.14 V and a short-circuit measurement, it can be determined that the built-in electrical
current density (JSC) of 3.2 mA cm2. The fill factor and field points from the MoS2 film to Si.
power conversion efficiency were calculated to be 42.4%
and 1.3%, respectively.
Time dependence of the short-circuit current density of
the fabricated solar device with light on and off is shown in
Fig. 7(a). When the light-on and light-off conditions are
switched alternately, two distinct current states for the device
are shown, the ‘‘low’’ current state in the dark and the ‘‘high’’
current state in the light. The open-circuit voltage shows simi-
lar dependence with the short-circuit current density, as shown
Fig. 7(b). Figs. 7(c) and 7(d) show the rising and falling edges
of the open circuit voltage in a period, respectively. From the
figures, we can see that the “ON” and “OFF” states are steady,
and the variation between two states is fast (40.0 ms) and
well reversible. These characteristics are similar with the
reported results about MoS2/a-Si heterojunction.21 This make
it possible for the device to act as a photosensitive resistor.
Using the data from the UV spectra of the MoS2 film,
the (ah)2 was plotted as a function of photon energy h, as
shown in Fig. 8(a), wherein h is the Planck constant and  is
photon frequency. The a is the absorption coefficient, calcu-
lated by ad ¼ ln(1/T), d and T are thickness and transmittance
of films, respectively.22 The band gap (Eg) of the film can be
obtained by intercept of the line on h axis. From the figure,
Eg ¼ 1.45 eV. The obtained energy-band value for the film is
little larger than MoS2 bulk (1.2 eV) and much smaller
than the monolayer (1.9 eV). According the measured C-V
curve in the reverse voltage range, the plot of C3 versus
reverse voltages is shown in Fig. 8(b). The linear C3 versus
V dependence demonstrates that the fabricated MoS2/Si junc-
tion is graded.23 According to the intercept on voltage axis, FIG. 8. (a) Plot of (ah)2 versus h for the MoS2 film. (b) C3 versus reverse
the built-in electrical field (Vbi) can be obtained, about voltages curve.

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114502-5 Hao et al. J. Appl. Phys. 117, 114502 (2015)

FIG. 9. (a) Energy band diagram of


isolated MoS2 and p-Si. (b) Energy
band diagram of MoS2/p-Si hetero-
junction. W is work function, w is elec-
tron affinity, Eg is energy band gap, Ef
is Fermi-energy level, Ei is the energy
level of the middle of the energy band
gap, EC is the bottom of conduction
band, EV is the top of valence band,
DEC and DEV are conduction band off-
set and valence band offset near the
interface, respectively.

The observed electrical and photovoltaic characteristics Based on the extracted Vbi, the Fermi energy level of the
can be explained by considering the energy-band diagram of MoS2 film (EF1) can be determined by Vbi ¼ EF2  EF1,19,24
the MoS2/Si junction. Fig. 9(a) shows the energy band dia- about 4.65 eV. This value is in accord with the reported
gram of isolated MoS2 and p-Si. As shown in Fig. 8(a), the results.25,28 Then, the values of electron affinity (w) for the
energy-band gap of the MoS2 thin film (Eg1) is 1.45 eV. The MoS2 film and p-Si can be calculated, w1 ¼ 3.92 eV and
Hall Effect measurements show that the as-grown MoS2 w2 ¼ 4.08 eV. Furthermore, the conduction band offset is
films is a quasi-intrinsic semiconductor with a very small DEC ¼ w1  w2 ¼ 0.16 eV and the valence band offset is
Hall coefficient (0). Due to the narrow band gap nature and DEV ¼ [w1 þ Eg1]  [w2 þ Eg2] ¼ 0.17 eV. The barrier heights
the existence of thermal emitted electrons, it is reasonable to for electrons and holes in the p-n heterojunction should take
assume that the as-grown MoS2 thin films are n-type semi- account of the band offsets. Therefore, the barrier heights for
conductors. Thus, the Fermi energy level of the MoS2 film electrons and holes are 0.19 and 0.52 eV, respectively.
(EF1) is close to (but above) the middle of the energy band Typically, if the barrier height for holes is 0.2 eV larger than
gap. For the p-Si used in our experiments, the Fermi energy that for electrons, the electron current will be approximately a
level [EF2 ¼ 5.0 eV] and energy band gap [Eg2 ¼ 1.12 eV] are factor of 104 larger than the hole current.29 Thus, in our case,
taken to construct the band structure and the difference the current is dominated by the electrons. Therefore, the ideal
(EF2-EV2) between the Fermi energy level and the top of the turn-on voltage should be 0.2 V. Within the precision level of
valence band is about 0.2 eV.24 When n-MoS2 films are de- the measurement, this value is almost same with the value
posited on the surface of p-Si, the electrons will flow from evaluated from the J-V curve of the p-n junction.
MoS2 into Si at the interface due to the higher Fermi energy
level of the MoS2. The flowing process stops when Fermi IV. CONCLUSION
levels are equal and a MoS2/Si p-n junction is fabricated, as
Bulk-like MoS2 thin films were deposited on the surface of
shown in Fig. 9(b). Thus, asymmetric characteristics and
p-type Si substrates using dc magnetron sputtering technique
obvious rectifying effect can be observed from the J-V curve
and MoS2/Si p-n junctions were formed. The p-n junction
in Fig. 5(a). As a result of electrons flowing, a built-in elec-
exhibited obvious rectifying characteristics with a turn-on volt-
trical field is formed near the interface, as illustrated in Fig.
age of 0.2 V. In different voltage range, the electrical transport-
8(b). Under illumination, the incident photons generate the
ing of the junction was dominated by diffusion current and
electron-hole (e-h) pairs in the MoS2 film and the Si. The
recombination current, respectively. Under the light illumina-
built-in electric field can effectively facilitate the separation
tion of 15 mW cm2, the p-n junction exhibited obvious photo-
of photo-generated e-h pairs, transporting separated electrons
from Si to MoS2 and holes towards Si. The processes of voltaic characteristics, JSC ¼ 3.2 mA cm2, VOC ¼ 0.14 V,
photo-excitation and carrier transport in the MoS2/Si p-n FF ¼ 42.4%, and g ¼ 1.3%. The mechanisms of the electrical
junction are demonstrated in Fig. 9(b). Therefore, obvious and photovoltaic characteristics were proposed in terms of the
photovoltaic characteristics are resulted in the p-n junction. energy-band structure of the MoS2/Si p-n junctions. The results
From Fig. 6, the open-circuit voltage is 0.14 V which is demonstrated that MoS2/Si p-n junctions have large potential
smaller than the reported values.9,10,25 As is well known that application in the area of photovoltaic devices.
the VOC depends on the build-in field near the interface.26
ACKNOWLEDGMENTS
The Vbi of 0.35 V in the MoS2/Si p-n junction is smaller than
the reported Au/MoS2 Schottky junction and monolayer The authors acknowledge the financial support by the
MoS2 p-n junction. In order to enhance the VOC and improve Fundamental Research Funds for the Central Universities
the photovoltaic properties, some effective routes should be (14CX05038A and 13CX02018A) and the National Natural
employed in future, such as incorporation of interfacial Science Foundation of China (Grant No. 51102284 and
layers with high work function.27 51372030).

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114502-6 Hao et al. J. Appl. Phys. 117, 114502 (2015)

1 14
J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. F. Bulbul, I. Efeoglu, and E. Arslan, Appl. Surf. Sci. 253, 4415–4419
Young, A. Gaucher, S. De, R. J. Smith, I. V. Shvets, S. K. Arora, G. (2007).
15
Stanton, H. Y. Kim, K. Lee, G. T. Kim, G. S. Duesberg, T. Hallam, J. J. S. K. Kim and B. C. Cha, Surf. Coat. Tech. 188–189, 174–178 (2004).
16
Boland, J. J. Wang, J. F. Donegan, J. C. Grunlan, G. Moriarty, A. Shmeliov, D. J. Late, P. A. Shaikh, R. Khare, R. V. Kashid, M. Chaudhary, M. A.
R. J. Nicholls, J. M. Perkins, E. M. Grieveson, K. Theuwissen, D. W. More, and S. B. Ogale, ACS Appl. Mater. Interfaces 6, 15881–15888
McComb, P. D. Nellist, and V. Nicolosi, Science 331, 568–571 (2011). (2014).
2 17
D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. Ramakrishna Matte, M. J. Sheng, K. Fan, D. Wang, C. Han, J. Fang, P. Gao, and J. Ye, ACS Appl.
Grayson, C. N. R. Rao, and V. P. Dravid, Adv. Mater. 24, 3549–3554 Mater. Interfaces 6, 16027–16034 (2014).
18
(2012). D. A. Neamen, Semiconductor Physics and Devices: Basic Principles
3
Y. Yoon, K. Ganapathi, and S. Salahuddin, Nano Lett. 11, 3768–3773 (McGraw-Hill, New York, 2003).
19
(2011). S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed.
4
Q. Q. Ji, Y. F. Zhang, T. Gao, Y. Zhang, D. L. Ma, M. X. Liu, Y. B. Chen, (Wiley, New York, 2007).
20
X. F. Qiao, P. H. Tan, M. Kan, J. Feng, Q. Sun, and Z. F. Liu, Nano Lett. W. Du, M. Baba, K. Toko, K. O. Hara, K. Watanabe, T. Sekiguchi, N.
13, 3870–3877 (2013). Usami, and T. Suemasu, J. Appl. Phys. 115, 223701 (2014).
5 21
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, M. R. Esmaeili-Rad and S. Salahuddin, Sci. Rep. 3, 2345 (2013).
22
136805 (2010). X. Chen, K. Ruan, G. Wu, and D. Bao, Appl. Phys. Lett. 93, 112112
6
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. (2008).
23
Nanotechnol. 6, 147–150 (2011). H. Huang, G. Fang, X. Mo, L. Yuan, H. Zhou, M. Wang, H. Xiao, and X.
7
Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, and G. Lu, ACS Nano 6, Zhao, Appl. Phys. Lett. 94, 063512 (2009).
24
74–80 (2012). S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, NJ,
8
M. Bernardi, M. Palummo, and J. C. Grossman, Nano Lett. 13, 3664–3670 1985).
25
(2013). M. Shanmugam, C. A. Durcan, and B. Yu, Nanoscale 4, 7399–7405
9
M. M. Furchi, A. Pospischil, F. Libisch, J. Burgd€ orfer, and T. Mueller, (2012).
26
Nano Lett. 14, 4785–4791 (2014). J. Shewchun, J. Dubow, A. Myszkowski, and R. Singh, J. Appl. Phys. 49,
10
S. Wi, H. Kim, M. Chen, H. Nam, L. J. Guo, E. Meyhofer, and X. Liang, 855–864 (1978).
27
ACS Nano 8, 5270–5281 (2014). M. Ma, Q. Xue, H. Chen, X. Zhou, D. Xia, C. Lv, and J. Xie, Appl. Phys.
11
M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Lett. 97, 061902 (2010).
28
Li, L. J. Chen, and J. H. He, ACS Nano 8, 8317–8322 (2014). M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape,
12
R. Cheng, D. Li, H. Zhou, C. Wang, A. Yin, S. Jiang, Y. Liu, Y. Chen, Y. and P. Barbara, Sci. Rep. 3, 1634 (2013).
29
Huang, and X. Duan, Nano Lett. 14, 5590–5597 (2014). H. Yang, H. M. Luo, H. Wang, I. O. Usov, N. A. Suvorova, M. Jain, D. M.
13
S. Sutar, P. Agnihotri, E. Comfort, T. Taniguchi, K. Watanabe, and J U. Feldmann, P. C. Dowden, R. F. DePaula, and Q. X. Jia, Appl. Phys. Lett.
Lee, Appl. Phys. Lett. 104, 122104 (2014). 92, 102113 (2008).

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