10V Drive Nch MOSFET

R6025ANZ

zStructure zDimensions (Unit : mm)

Silicon N-channel MOSFET TO-3PF 5.5 3.0
15.5 φ3.6

4.5

10.0
zFeatures

0.44
1) Low on-resistance.

26.5
2) Fast switching speed.

16.5
14.5

16.5
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.

3.5
5) Parallel use is easy. 2.0 3.0

2.0
2.0

2.5
0.75

14.8
zApplications
0.9
Switching (1)Gate
(2)Drain 5.45 5.45
(3)Souce (1) (2) (3)

zPackaging specifications zInner circuit

Package Tube
Type
Basic ordering unit (pieces) 360
R6025ANZ ∗1

(1) (2) (3)

(1) Gate
(2) Drain
∗1 Body Diode
zAbsolute maximum ratings (Ta=25°C) (3) Source

Parameter Symbol Limits Unit

Drain-source voltage VDSS 600 V
Gate-source voltage VGSS ±30 V
∗3
Continuous ID ±25 A
Drain current ∗1
Pulsed IDP ±100 A
∗3
Source current Continuous IS 25 A
(Body Diode) ∗1
Pulsed ISP 100 A
Avalanche current IAS ∗2 12.5 A
Avalanche energy EAS ∗2 39.0 mJ
Total power dissipation (Tc=25°C) PD 150 W
Channel temperature Tch 150 °C
Range of storage temperature Tstg −55 to +150 °C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed.

zThermal resistance
Parameter Symbol Limits Unit
Channel to case Rth(ch-c) 0.83 °C/W

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R6025ANZ Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS − − ±100 nA VGS=±30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 600 − − V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS − − 100 µA VDS=600V, VGS=0V
Gate threshold voltage VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA
Static drain-source on-state resistance RDS(on) ∗ − 0.12 0.15 Ω ID=12.5A, VGS=10V
Forward transfer admittance | Yfs | ∗ 14 20 − S VDS=10V, ID=12.5A
Input capacitance Ciss − 3250 − pF VDS=25V
Output capacitance Coss − 2400 − pF VGS=0V
Reverse transfer capacitance Crss − 85 − pF f=1MHz
∗
Turn-on delay time td(on) − 50 − ns VDD 300V, ID=12.5A
∗
Rise time tr − 135 − ns VGS=10V
∗
Turn-off delay time td(off) − 185 − ns RL=24Ω
∗
Fall time tf − 110 − ns RG=10Ω
Total gate charge Qg ∗ − 88 − nC VDD 300V
∗ ID=25A
Gate-source charge Qgs − 25 − nC
VGS=10V
∗ RL=12Ω / RG=10Ω
Gate-drain charge Qgd − 30 − nC
∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD ∗ − − 1.5 V IS= 12.5A, VGS=0V
∗ Pulsed

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2/5 2009.08 - Rev.B
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R6025ANZ Data Sheet

zElectrical characteristic curves

1000 40
20
Operation in this 10V Ta= 25°C 10V
35 8.0V
area is limited PW = 100us Pulsed
100 by RDS(ON) 8.0V
30 6.5V

DRAIN CURRENT: ID (A)

DRAIN CURRENT : ID (A)

DRAIN CURRENT: ID (A)

7.0V 15
7.0V
25
10 6.0V
6.5V
20 5.5V 5.5V
10
1 PW = 1ms 15 6.0V
Ta= 25°C 5.0V

PW = 10ms 10 5.0V Pulsed

5
0.1
Tc = 25°C 5 VGS= 4.5V VGS= 4.5V
DC operation
Single Pulse
0.01 0
0
0.1 1 10 100 1000 0 10 20 30 40 50
0 1 2 3 4 5
DRAIN-SOURCE VOLTAGE: VDS (V) DRAIN-SOURCE VOLTAGE: VDS (V)
DRAIN-SOURCE VOLTAGE : VDS ( V )

Fig.1 Maximum Safe Operating Aera Fig.2: Typical output characteristics(Ⅰ) Fig.3: Typical output characteristics(Ⅱ)

100 6 1
VDS= 10V VDS= 10V VGS= 10V
GATE THRESHOLD VOLTAGE: VGS(th) (V)

STATIC DRAIN-SOURCE ON-STATE

Pulsed ID = 1mA Pulsed
10 5

RESISTANCE : RDS(on) (Ω)

DRAIN CURRENT : ID (A)

Ta= 125°C 4
1 Ta= 75°C
Ta= 25°C
3 0.1
Ta= -25°C
0.1
2 Ta= 125°C
Ta= 75°C
0.01 1 Ta= 25°C
Ta= -25°C

0.001 0 0.01
0 2 4 6 -50 0 50 100 150 0.1 1 10 100

GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE: Tc h (°C) DRAIN CURRENT : ID (A)

Fig.4 Typical Transfer Characteristics Fig.5 Gate Threshold Voltage Fig.6 Static Drain-Source On-State
vs. Channel Temperature Resistance vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)

0.3 0.3 100

Ta=25°C VGS= 10V VDS= 10V
STATIC DRAIN-SOURCE ON-STATE
STATIC DRAIN-SOURCE ON-STATE

Pulsed Pulsed Pulsed

RESISTANCE : RDS(on ) (Ω)
RESISTANCE : RDS(on) (Ω)

10
0.2 0.2
ID = 25A
ID = 25A
1
ID = 12.5A
ID = 12.5A Ta= -25°C
0.1 0.1
Ta= 25°C
0.1 Ta= 75°C
Ta= 125°C

0 0 0.01
0 5 10 15 -50 0 50 100 150 0.01 0.1 1 10 100
GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE: Tch (°C) DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Forward Transfer Admittance
Resistance vs. Gate Source Voltage Resistance vs. Channel Temperature vs. Drain Current

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R6025ANZ Data Sheet

100 100000 15
VGS= 0V Ta= 25°C

REVERSE DRAIN CURRENT : IDR (A)

GATE-SOURCE VOLTAGE : VGS (V)

Pulsed Ciss VDD = 300V
10000 ID = 25A
10 R G= 10Ω

CAPACITANCE : C (pF)
10 Pulsed
1000
Coss
1
100 C rss
Ta= 125°C
Ta= 75°C 5
0.1 Ta= 25°C 10 Ta= 25°C
Ta= -25°C
f= 1MHz
VGS= 0V
0.01 1 0
0 0.5 1 1.5 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120
SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC)

Fig.10 Reverse Drain Current vs. Fig.11 Typical Capacitance vs. Fig.12 Dynamic Input Characteristics
Sourse-Drain Voltage Drain-Source Voltage

1000 100000
Ta= 25°C
REVERSE RECOVERY TIME: trr (ns)

VDD = 300V
10000 VGS= 10V
SWITCHING TIME : t (ns)

RG= 10Ω
td(off) Pulsed
1000

100
100

Ta= 25°C
di / dt= 100A / µs 10 td(on)
tf
VGS= 0V tr
Pulsed
10 1
0.1 1 10 100 0.01 0.1 1 10 100

REVERSE DRAIN CURRENT : IDR (A) DRAIN CURRENT : ID (A)

Fig.13 Reverse Recovery Time Fig.14 Switching　Characteristics

vs.Reverse Drain Current

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4/5 2009.08 - Rev.B
c 2009 ROHM Co., Ltd. All rights reserved.
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R6025ANZ Data Sheet

zSwitching characteristics measurement circuit

Pulse Width
VGS ID
VDS 90%
50% 50%
VGS 10%
RL
VDS
D.U.T. 10% 10%

RG VDD
90% 90%
td(on) tr td(off) tr

ton toff

Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

VG
VGS ID
VDS Qg

RL VGS
IG (Const.) D.U.T.
Qgs Qgd
RG VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

VGS IAS
VDS
V(BR)DSS
L IAS
D.U.T.

RG
VDD VDD

1 2 V(BR)DSS
EAS = L IAS
2 V(BR)DSS - VDD

Fig.3-1 Avalanche Measurement circuit Fig.3-2 Avalanche waveform

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5/5 2009.08 - Rev.B
c 2009 ROHM Co., Ltd. All rights reserved.
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 Notice

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