JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23 Plastic-Encapsulate Transistors

S9013 TRANSISTOR (NPN)

SOT–23

FEATURES
z High Collector Current.
z Complementary to S9012.
z Excellent hFE Linearity.
1. BASE
MARKING: J3 2. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. COLLECTOR

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage =
V(BR)CBO IC=0.1mA, IE 0 40 V
Collector-emitter breakdown voltage =
V(BR)CEO IC=1mA, IB 0 25 V
Emitter-base breakdown voltage =
V(BR)EBO IE=0.1mA, IC 0 5 V
Collector cut-off current =
ICBO VCB=40V, IE 0 0.1 uA
Collector cut-off current =
ICEO VCE=20V, IB 0 0.1 uA
Emitter cut-off current =
IEBO VEB=5V, IC 0 0.1 uA
hFE(1) VCE=1V,
= IC 50mA 120 400
DC current gain
hFE(2) VCE
= =1V, IC 500mA 40
Collector-emitter saturation voltage VCE(sat) IC=500mA,
= IB 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA,
= IB 50mA 1.2 V
Base-emitter voltage VBE VCB=1V,IC= 10mA, 0.7 V
Transition frequency fT VCE=6V,IC=20mA, f=30MHz 150 MHz
Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 8 pF

CLASSIFICATION OF hFE(1)

RANK L H J
RANGE 120-200 200-350 300-400

B,Nov,2011
Typical Characterisitics S9013
Static Characteristic hFE —— IC
100 1000

COMMON COMMON EMITTER

400uA EMITTER VCE=1V
Ta=25℃
(mA)

80 350uA Ta=100℃

hFE
300uA
IC

Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

60
250uA
100
200uA
40
150uA

100uA
20

IB=50uA
0 10
0 4 8 12 16 20 1 3 10 30 100 500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
500 1.2

300
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (mV)

0.8 Ta=25℃

100

Ta=100℃

Ta=100℃
0.4
30 Ta=25℃

β=10 β=10
10 0.0
1 3 10 30 100 500 1 3 10 30 100 500

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB

100 100
COMMON EMITTER f=1MHz
VCE=1V IE=0/ IC=0
30 Ta=25℃
(mA)

Cib
30
Ta=100℃
(pF)
IC

10
COLLECTOR CURRENT

Cob
CAPACITANCE

3 10

Ta=25℃
1

0.3

0.1 1
0.0 0.2 0.4 0.6 0.8 1.0 0.1 0.3 1 3 10 20

BASE-EMMITER VOLTAGE VBE (V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 400
VCE=6V
Ta=25℃
(MHz)

COLLECTOR POWER DISSIPATION

300 300
fT
TRANSITION FREQUENCY

PC (mW)

100 200

100

10 0
10 30 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

B,Nov,2011