Hall Effect - Sarang

HALL EFFECT IN SEMICONDUCTORS
SARANG A. KULKARNI
ROLL NO.-16210087
sarang.kulkarni@iitgn.ac.in
JANUARY 29, 2018
1
Physics Lab Report IIT GANDHINAGAR
Contents
1 OBJECTIVES 3
2 INTRODUCTION 3
3 EXPERIMENTAL SETUP 3
4 THEORY 4
4.1 Derivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
5 EXPERIMENTAL RESULTS 6
5.1 N type sample . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.1.1 For constant applied magnetic field (B) VH vs Inx . . . . . . . . . . . 6
5.1.2 For constant sample current (Inx ) VH vs B . . . . . . . . . . . . . . . . 8
5.2 P type sample . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.1 For constant applied magnetic field (B) VH vs Ipx . . . . . . . . . . . 10
5.2.2 For constant sample current (Ipx ) VH vs B . . . . . . . . . . . . . . . . 12
5.3 Results & Error Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3.1 For Ntype : Calculation of RH from VH vs Inx for constant B . . . 14
5.3.2 For Ntype : Calculation of RH from VH vs B for constant Inx . . . 14
5.3.3 Error Analysis for N type . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3.4 For Ptype : Calculation of RH from VH vs Ipx for constant B . . . 15
5.3.5 For Ptype : Calculation of RH from VH vs B for constant Ipx . . . 15
5.3.6 Error Analysis for P type . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 REFERENCES 16
Page 2
1 OBJECTIVES
To measure Hall coefficient and Hall voltage in both P & N type semiconductors.
2 INTRODUCTION
The Hall effect is a consequence of the forces that are exerted on moving charges by electric and
magnetic fields. The Hall effect is used to distinguish whether a semiconductor is n type or p type
and to measure the majority carrier concentration and majority carrier mobility.[2]
3 EXPERIMENTAL SETUP
Fig 1:Hall coeffient measurement setup
A current source is used to pass current through the sample in the horizontal direction.This source
is variable and can be adjusted to setup any value of current in the order of mA. A another current
source(Its value in the order of A) is used to set up a magnetic field which is perpendicular to the
plane of the sample. A voltmeter which is part of the instrument measures the Hall voltage across
the other two verticle ends of the sample.
Fig 2: Hall effect geometry.[4] The arrangement corresponds to our laboratory setup
A current I is arranged to flow through the strip from left to right, and the voltage difference
between the top and bottom is measured.[4]
Page 3
4 THEORY
4.1 Derivation
Fig 3: Geometry for measuring the Hall effect[2]
The current Ix through the sample is set up by a voltage or a current source. The sample is
passed through magnetic field which is perpendicular to the sample i.e. z direction. The charge
carries(electrons and holes) in the sample will experience a force:
F=q v×B
It should be noted that both electrons and holes experience force in the same direction i.e. in −y
direction. This is due to, both travelling in opposite directions and have different charge sign.
In a p type semiconductor,having equilibrium carrier concentration (p0 > n0 ), there will be posi-
tive charge build up at y = 0 surface of the sample. Similarly for a n type semiconductor, ,having
equilibrium carrier concentration (n0 > p0 ), there will be negative charge build up at y = 0 surface
of the sample. This ”net charge induces a Electric field in y direction.”
Now the charge carriers will experience ”Lorentz Force” in the present of both Magnetic and
induced Electric field.
F=q E+q v×B
In the steady state situation, we expect the Magnetic field force will be exactly bal-
anced by the induced Electric field force. This balance can be wriiten as:
F = q [E + v × B] = 0
Taking the magnitude both sides:
Page 4
qEy = vx Bz
This induced Electric field is called ”Hall Field” and correponding potential difference generated
is called ”Hall voltage.”
qVH = EH W
Where W is the width of the sample in y direction i.e. the direction in which the electric field is
induced in the semiconductor sample.
Substituting the value of Hall Field EH in terms of Magnetic field.
VH = vx Bz W
The current in the sample is only due to drift and not due to diffusion. Here vdx is the drift velocity
in the x direction.
Jdx = ρvdx
Where ρ and q are the volume charge density and charge on electron respectively, for our case
ρ = qn or ρ = qp. Therefore:
Jpx = q pvdx
and
Jnx = q nvdx
For a p type sample:
Jpx Ipx
vdx = qp = (qp)(W d)
Here W d is the cross section area of the sample perpendicular to direction of current.
Combining with above equation:
Ipx VH
vdx = (qp)(W d) = Bz W
Ipx VH
(qp)(d) = Bz
Therefore:
Ipx Bz
VH = (qp)(d)
Similarly for n type semiconductor:
Inx Bz
VH = − (qn)(d)
We define Hall coeffiecient RH to be:
Page 5
1
RH = qp f or p type
1
RH = qn f or n type
Therefore:
RH Ipx Bz
VH = d f or p type
VH = − RH Idnx Bz f or n type
From above theory, We infer that Hall Voltage VH is both a function of sample current Ix and
Magnetic field strength Bz .This forces just to do two experiments, one keeping Ix = Constant and
other Bz = Constant and indeed check the theoretical predictions experimentally.
5 EXPERIMENTAL RESULTS
From theory we already know Hall voltage(VH ) should be a function of both sample current (Inx
or Ipx ) and applied magnetic field (B). Hall voltage measurement was performed in two ways:
1. For constant applied magnetic field (B) i.e. VH vs Ix

2. For constant sample current (Inx or Ipx ) i.e. VH vs B
5.1 N type sample

5.1.1 For constant applied magnetic field (B) VH vs Inx
IB = 0.5A B = −630Gauss BO = −40Gauss

Note: Here BO and VHO are the value of measurements when magnetic field is switched off.
Inx (mA) B(Gauss) VH (mV ) VHO (mV )

1 -630 −5.4 0.4
-1 -630 6.4 0.5
-1 630 −6.2 −0.4
1 630 6.8 1.2
To minimize the thermal error and minor misalignment of probes on the sample, we average the
readings.
1
VH = 4 × (|V (B, I)| + |V (−B, I)| + |V (B, −I)| + |V (−B, −I)|)
1
VH = 4 × (5.8 + 5.9 + 5.8 + 5.6)
VH = 5.775mV for Inx = 1mA
Page 6

1.5 -630 −8.4 0.3
-1.5 -630 9.7 0.8
-1.5 630 −9.2 −0.3
1.5 630 10.0 1.1
1
VH = 4 × (8.7 + 8.9 + 8.9 + 8.9)
VH = 8.85mV for Inx = 1.5mA

2 -630 −11.4 0.3
-2 -630 13.1 1.4
-2 630 −11.4 0.3
2 630 12.6 1.0
1
VH = 4 × (11.7 + 11.7 + 11.7 + 11.6)

3 -630 −16.5 0.9
-3 -630 20.4 2.6
-3 630 −16.5 0.8
3 630 19.5 2.3
1
VH = 4 × (17.4 + 17.8 + 17.3 + 17.2)

4 -630 −19.8 2.8
-4 -630 25.2 3.9
-4 630 −21.4 1.8
4 630 26.9 5.1
1
VH = 4 × (22.6 + 21.3 + 23.2 + 21.8)
Page 7
Fig 4: The figure show how |VH | varies with sample current |Inx | for constant
Magnetic field B, A linear dependence can be clearly observed. Hence we can
associate a Constant RH ,We do not know a priori, if RH is a function of magnetic
field or not.
5.1.2 For constant sample current (Inx ) VH vs B

For Inx = 2.5mA
B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

-700 -39 −13.3 0.5
-850 -44 −16.8 0.9
-934 -47 −19.4 −0.8
-1160 -50 −23.0 −0.5
-1190 -50 −26.6 −0.3
-1390 -60 −30.4 −0.5
-1590 -60 −35.4 −2.6
Fig 5: The figure show how |VH | varies with Magnetic field |B| for constant sample
current Inx , A linear dependence is again observed.
Page 8
For Inx = 1mA

-730 -60 −7.2 −1.3
-820 -60 −8.2 −1
-930 -60 −9.4 −1
-1040 -60 −10.6 −1
-1180 -60 −11.8 −1
-1320 -60 −13.7 −1.1
-1460 -60 −14.4 −0.9
For Inx = 3.5mA

-720 -60 −22.8 −2.7
-790 -60 −27.1 −2.6
-920 -60 −31.3 −2.6
-1090 -60 −35.5 −2.2
-1210 -60 −39.8 −2.5
-1400 -60 −45.6 −3.7
-1450 -60 −49.6 −3.6
Page 9
5.2 P type sample

5.2.1 For constant applied magnetic field (B) VH vs Ipx
IB = 0.5A B = −635Gauss BO = −60Gauss

Note: Here BO and VHO are the value of measurements when magnetic field is switched off.

1 -635 4.9 2.5
1 635 −0.1 2.2
-1 635 0.1 −2.2
-1 -635 −4.9 −2.5
To minimize the thermal error and minor misalignment of probes on the sample, we average the
readings.
1
VH = 4 × (|V (B, I)| + |V (−B, I)| + |V (B, −I)| + |V (−B, −I)|)
1
VH = 4 × (2.4 + 2.3 + 2.3 + 2.4)
VH = 2.35mV for Ipx = 1mA

1.48 -635 7.3 3.7
1.48 635 −0.1 3.4
-1.48 635 0.1 −3.3
-1.48 -635 −7.2 −3.6
1
VH = 4 × (3.6 + 3.5 + 3.4 + 3.6)
VH = 3.525mV for Ipx = 1.48mA
Page 10

2 -635 9.9 5.1
-2 -635 −9.7 −5.0
-2 635 0.2 −4.5
2 635 −0.1 4.6
1
VH = 4 × (4.7 + 4.7 + 4.7 + 4.8)

3 -635 14.8 7.6
-3 -635 −14.6 −7.4
-3 635 0.2 −6.9
3 635 0.0 7.1
1
VH = 4 × (7.2 + 7.2 + 7.1 + 7.1)

4 -635 20.2 10.6
-4 -635 −19.8 −10.3
-4 635 0.0 −9.4
4 635 −0.1 −9.6
1
VH = 4 × (9.6 + 9.5 + 9.4 + 9.5)
Fig 8: The figure show how |VH | varies with sample current |Ipx | for constant
Magnetic field B, A linear dependence is observed.
Page 11
5.2.2 For constant sample current (Ipx ) VH vs B

For Ipx = 1mA

-750 -60 5.0 2.6
-820 -60 5.5 2.5
-960 -60 6.0 2.6
-1090 -60 6.5 2.6
-1220 -60 7.0 2.6
-1350 -60 7.5 2.6
-1470 -60 7.9 2.6
current Ipx , A linear dependence is again observed.
For Ipx = 2.5mA

-632 -28 12.5 6.5
-759 -18 13.4 6.3
-900 -30 14.8 6.3
-1040 -30 16.1 6.4
-1180 -40 17.3 6.4
-1320 -40 18.7 6.6
-1490 -60 20.1 6.6
Page 12
For Ipx = 3.5mA

-700 -60 19 9.7
-820 -60 19.8 9.6
-960 -60 21.5 9.5
-1100 -60 23.7 9.6
-1230 -60 25.7 9.8
-1370 -60 27 9.7
-1500 -60 28.6 9.7
Page 13
5.3 Results & Error Analysis

5.3.1 For Ntype : Calculation of RH from VH vs Inx for constant B
|VH | = | RH Idnx Bz |
VH d
|RH | = | Inx Bz | ( A VGauss
m
)
−4
|RH | = | 5.49×5×10
−630 | ( A VGauss
m
)
|RH | = 4.3571 × 10−6 ( A VGauss

m
)
5.3.2 For Ntype : Calculation of RH from VH vs B for constant Inx

|VH | = | RH Idnx Bz |
VH d
|RH | = | Inx Bz | ( A VGauss
m
)
For Inx = 2.5mA :

−4
|RH | = | 0.02249×5×10
2.5 | ( A VGauss
m
)
|RH | = 4.4980 × 10−6 ( A VGauss

m
)
For Inx = 1mA :

−4
|RH | = | 0.01034×5×10
1 | ( A VGauss
m
)
|RH | = 5.1700 × 10−6 ( A VGauss

m
)
For Inx = 3.5mA :

−4
|RH | = | 0.03203×5×10
3.5 | ( A VGauss
m
)
|RH | = 4.5757 × 10−6 ( A VGauss

m
)
Average RH = 4.5757+5.1700+4.4980+4.3571
4 × 10−6
RH = 4.6502 × 10−6 ( A VGauss

m
)
5.3.3 Error Analysis for N type

RH ( AµV m
Gauss ) Deviation δ δ2
4.5757 -0.0745 0.0055
5.1700 0.5198 0.2701
4.4980 -0.1522 0.0231
4.3571 -0.2931 0.0859
Page 14
Standard Deviation:
(0.0055 + 0.2701 + 0.0231 + 0.0859)) × 10−5

p
σ=(
σ=0.6202 × 10−5
RH = (4.6502 ± 0.6202) × 10−6 ( A VGauss

m
)
5.3.4 For Ptype : Calculation of RH from VH vs Ipx for constant B

RH Ipx Bz
|VH | = | d |
|RH | = | IVpxHBdz | ( A VGauss

m
)
−4
|RH | = | 2.31576×5×10
−635 | ( A VGauss
m
)
|RH | = 1.8234 × 10−6 ( A VGauss

m
)
5.3.5 For Ptype : Calculation of RH from VH vs B for constant Ipx

RH Ipx Bz
|VH | = | d |
|RH | = | IVpxHBdz | ( A VGauss

m
)
For Ipx = 1mA :

−4
|RH | = | 0.00386×5×10
1 | ( A VGauss
m
)
|RH | = 1.9300 × 10−6 ( A VGauss

m
)
For Ipx = 2.5mA :

−4
|RH | = | 0.00912×5×10
2.5 | ( A VGauss
m
)
|RH | = 1.8240 × 10−6 ( A VGauss

m
)
For Ipx = 3.5mA :

−4
|RH | = | 0.01245×5×10
3.5 | ( A VGauss
m
)
|RH | = 1.7785 × 10−6 ( A VGauss

m
)
Average RH = 1.8234+1.9300+1.8240+1.7785
4 × 10−6
RH = 1.8389 × 10−6 ( A VGauss

m
)
Page 15
5.3.6 Error Analysis for P type

RH ( AµV m
Gauss ) Deviation δ δ2
1.8234 0.0155 0.00024025
1.9300 -0.0911 0.00829921
1.7785 0.0604 0.00364816
1.8240 0.0149 0.00022201
Standard Deviation:
(0.0002 + 0.0036 + 0.0082 + 0.0002)) × 10−6

p
σ=(
σ=0.1114 × 10−6
RH = (1.8389 ± 0.1114) × 10−6 ( A VGauss

m
)
6 REFERENCES
1. From lab manual of IIT GN.
2. Semiconductor Physics and Devices by Donald A. Neamen.
3. Advanced Practical Physics by Worshnop Flint.
4. The University of Tennessee, Modern Physics Lab manual by Dr. G. Bradley Armen,The Hall
Effect in metals and semiconductors. http://www.phys.utk.edu/labs/modphys/Hall%20Effect.pdf
(2007)
5. Kittel, C., Introduction to Solid State Physics, 6th edition, John Wiley & Sons (1986), pages
147 to 151.
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HALL EFFECT IN SEMICONDUCTORS

JANUARY 29, 2018

Fig 1:Hall coeffient measurement setup

Fig 3: Geometry for measuring the Hall effect[2]

F=q E+q v×B

Taking the magnitude both sides:

Similarly for n type semiconductor:

1. For constant applied magnetic field (B) i.e. VH vs Ix

5.1 N type sample

IB = 0.5A B = −630Gauss BO = −40Gauss

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

5.1.2 For constant sample current (Inx ) VH vs B

B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

For Inx = 1mA

B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

For Inx = 3.5mA

B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

5.2 P type sample

IB = 0.5A B = −635Gauss BO = −60Gauss

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

Inx (mA) B(Gauss) VH (mV ) VHO (mV )

5.2.2 For constant sample current (Ipx ) VH vs B

B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

For Ipx = 2.5mA

B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

For Ipx = 3.5mA

B(Gauss) BO (Gauss) VH (mV ) VHO (mV )

5.3 Results & Error Analysis

|RH | = 4.3571 × 10−6 ( A VGauss

5.3.2 For Ntype : Calculation of RH from VH vs B for constant Inx

For Inx = 2.5mA :

|RH | = 4.4980 × 10−6 ( A VGauss

For Inx = 1mA :

|RH | = 5.1700 × 10−6 ( A VGauss

For Inx = 3.5mA :

|RH | = 4.5757 × 10−6 ( A VGauss

RH = 4.6502 × 10−6 ( A VGauss

5.3.3 Error Analysis for N type

(0.0055 + 0.2701 + 0.0231 + 0.0859)) × 10−5

RH = (4.6502 ± 0.6202) × 10−6 ( A VGauss

5.3.4 For Ptype : Calculation of RH from VH vs Ipx for constant B

|RH | = | IVpxHBdz | ( A VGauss

|RH | = 1.8234 × 10−6 ( A VGauss

5.3.5 For Ptype : Calculation of RH from VH vs B for constant Ipx

|RH | = | IVpxHBdz | ( A VGauss

For Ipx = 1mA :

|RH | = 1.9300 × 10−6 ( A VGauss

For Ipx = 2.5mA :

|RH | = 1.8240 × 10−6 ( A VGauss

For Ipx = 3.5mA :

|RH | = 1.7785 × 10−6 ( A VGauss

RH = 1.8389 × 10−6 ( A VGauss

5.3.6 Error Analysis for P type

(0.0002 + 0.0036 + 0.0082 + 0.0002)) × 10−6

RH = (1.8389 ± 0.1114) × 10−6 ( A VGauss

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