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CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type VDSS RDS(ON) ID @VGS
CEP02N6A 600V 8.5Ω 1.4A 10V
CEB02N6A 600V 8.5Ω 1.4A 10V
CEF02N6A 600V 8.5Ω 1.4A d 10V
D G
G G
G D D
S S S
CEB SERIES CEP SERIES CEF SERIES S
TO-263(DD-PAK) TO-220 TO-220F
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 3 4.5 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W
Rev 3. 2011.Oct
Details are subject to change without notice . http://www.cet-mos.com
1
CEP02N6A/CEB02N6A
CEF02N6A
Electrical Characteristics Tc = 25 C unless otherwise noted
2
CEP02N6A/CEB02N6A
CEF02N6A
1.2 2.4
VGS=10,8,7V
1.0 2.0
ID, Drain Current (A)
0.6 1.2
0 0
0.0 3 6 9 12 15 18 1 2 3 4 5 6 7
300 3.0
ID=0.7A
RDS(ON), On-Resistance(Ohms)
VGS=10V
250 2.5
C, Capacitance (pF)
RDS(ON), Normalized
Ciss
200 2.0
150 1.5
100 1.0
Coss
50 0.5
Crss
0 0.0
0 5 10 15 20 25 -100 -50 0 50 100 150 200
ID=250µA
IS, Source-drain current (A)
1.2
0
1.1 10
VTH, Normalized
1.0
0.9
-1
10
0.8
0.7
-2
0.6 10
-50 -25 0 25 50 75 100 125 150 0.2 0.6 1.0 1.4 1.8 2.2
3
CEP02N6A/CEB02N6A
CEF02N6A
1
10 10
VDS=480V
VGS, Gate to Source Voltage (V)
ID=1.2A
100ms
8 RDS(ON)Limit
4
-1
10
2 TC=25 C
TJ=150 C
-2 Single Pulse
0 10
0 1 2 3
0 1.2 2.4 3.6 4.8 6 7.2 10 10 10 10
VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%
PULSE WIDTH
0
10
r(t),Normalized Effective
D=0.5
0.2
-1 0.1 PDM
10
0.05 t1
0.02 t2
0.01 1. RθJC (t)=r (t) * RθJC
Single Pulse 2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
-2
4. Duty Cycle, D=t1/t2
10
-2 -1 0 1 2 3 4
10 10 10 10 10 10 10