Lecture 19

Bipolar Junction Transistors (BJT): Part 3

Ebers Moll Large Signal BJT Model, Using CVD
model to solve for DC bias point
Reading:
Pierret 11.1

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Bipolar Junction Transistor (BJT) Quantitative Solution
Insight into transistor performance

If LB>>W (most of the minority carriers make it across the base),

1 1 β DC
α DC = ⇒ =
DEWN B 1  W 
2
DEWN B 1 + β DC
1+ +   1+
DB LE N E 2  LB  DB LE N E
and
1 DB LE N E α DC
β DC = ⇒ =
DEWN B 1  W 
2
DEWN B 1 − α DC
+  
D B LE N E 2  LB 

Georgia Tech ECE 3040 - Dr. Alan Doolittle

Development of the Large Signal Model of a BJT (Ebers-Moll Model)

IF0 A
   
D coshW   VEB   VCB
   e VT − 1
D p  L  D p 1
I E = qA E n Eo + B Bo B
 e T − 1 − qA B Bo
V

 LE LB sinh W   
  LB sinh W   

  L    L 
  B     B 

* 
D p



 cosh W  
 L   VCB
   e VT − 1
VEB
1 D D p  B 
I C = qA B Bo  e T − 1 − qA C nCo + B Bo
V

 LB sinh W   
  LC LB sinh W   

  L    L 
  B    B  

A
IR0

 VEB VT   VCB VT 
I E = I F 0  e − 1 − A e − 1
   
 VEB VT   VCB VT 
I C = A e − 1 − I R 0  e − 1
   
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Development of the Large Signal Model of a BJT (Ebers-Moll Model)

 VEB VT   VCB VT 
I E = I F 0  e − 1 − A e − 1
   
 VEB VT   VCB VT 
I C = A e − 1 − I R 0  e − 1
   
When VCB=0,

 VEB VT   VEB VT 
I E = I F 0  e − 1 and I C = A e − 1
IC    
IB but , Looks like an Ideal diode

IF0 > A ( see *)

VEB
Thus,
IE
 VEB VT   VEB VT 

IE = IF0 e − 1 and I C = α F I F 0  e
  − 1
   
but , I C = α F I E → α F = α DC common base current gain
The collector current is the fraction of the emitter current “collected”
Georgia Tech ECE 3040 - Dr. Alan Doolittle
Development of the Large Signal Model of a BJT (Ebers-Moll Model)

 VEB VT   VCB VT 
I E = I F 0  e − 1 − A e − 1
   
 VEB VT   VCB VT 
I C = A e − 1 − I R 0  e − 1
   
When VEB=0,

 VCB VT   VCB VT 
I E = − A e − 1 and I C = − I R 0  e − 1
VCB    
IC
Looks like an Ideal diode
IB but ,
I R0 > A ( see *)
Thus,
IE
 VCB VT   VCB VT 
I E = −α R I R 0  e − 1 and I C = − I R 0  e − 1
   
but , I E = α R I C → α R ≠ α DC
In Inverse Active mode, the emitter current is the fraction of the
Georgia Tech
collector current “collected” ECE 3040 - Dr. Alan Doolittle
Development of the Large Signal Model of a BJT (Ebers-Moll Model)

PNP Ideal Diodes

Note: A=αRIRo= αFIFo  VEB VT   VCB VT 

I F = I F 0  e − 1 and I R = I R 0  e − 1
   
IF IR
Emitter Collector

IE IC

αRIR αFIF
Base IB

 VEB VT   VCB VT 

IE = IF0e − 1 − α R I R 0  e
  − 1
   
 VEB VT   VCB VT 
IC = α F I F 0  e
  
− 1 − I R 0  e − 1
Georgia Tech
    ECE 3040 - Dr. Alan Doolittle
Development of the Large Signal Model of a BJT (Ebers-Moll Model)

NPN Ideal Diodes

 VBE VT   VBC VT 
I F = I F 0  e − 1 and I R = I R 0  e − 1
   
IF IR
Emitter Collector

IE IC

αRIR αFIF
Base IB

 VBB VT   VBC VT 
I E = I F 0  e − 1 − α R I R 0  e − 1
   
 VBE VT   VBC VT 
I C = α F I F 0  e − 1 − I R 0  e − 1
Georgia Tech
    ECE 3040 - Dr. Alan Doolittle
 Using the Ebers-Moll model requires mathematical complexity
(and much pain). Thus, we have an approximate solution
method* that allows a quick solution.

*I refer to as the “CVD/Beta Analysis”. This is just my term, not a

universal name.

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Quick Solution using a CVD/Beta Approach

Consider the following pnp BJT circuit with a common emitter

current gain, βDC=180.7. Find Ib, Ic, and Ie assuming a turn on
voltage of 0.7V.

Neglect Leakage R1(Ib)

currents Ic

I C = α dc I E + I CBo Ib
Ie
I C = β dc I B + I CEo R3(Ie)

I E = I B + IC
0=-4V+IB(12000)+VEB+IE(15000)
4V=IB(12000)+0.7V+IC(1/αDC)(15000)
4V=IB(12000)+0.7V+[βDCIB][(1+βDC)/ βDC](15000)
3.3V=IB[(12000)+(1+180.7)(15000)]

IB= 1.2uA IC=180.7IB=218uA IE=(181.7/180.7)IC=219uA

Georgia Tech ECE 3040 - Dr. Alan Doolittle
Development of the Large Signal Model of a BJT (Ebers-Moll Model)

Compare our results using the CVD/Beta model to the full

Ebers-Moll solution used in PSPICE...
Only 1%
Actual error in the
Ibase=1.05uA collector and
not 1.2uA as emitter
calculated currents

Actual
Vbe=0.662V
not 0.7V as
assumed

Current into various nodes Voltage at various nodes

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Development of the Large Signal Model of a BJT (Ebers-Moll Model)
Common Base

Real shows
IV curve looks variation due
like a diode to “base width
modulation”
dependent on
the applied
VCB

Input Output

Input Output Real IV is limited

After the base-
IE and IC and collector junction by breakdown of
is reverse biased the base-collector
VEB (-VCB)
(starts collecting), junction
IE~=IC

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Development of the Large Signal Model of a BJT (Ebers-Moll Model)
Common Emitter

IV curve looks
like a diode but
has a DC shift
associated with
the reverse biased
base-collector
junction current

Output Real IV is limited by

breakdown of the base-
Input collector junction

After the base-collector Real shows finite

slope due to
Input Output junction is reverse biased
“base width
(starts collecting), IC=βIB modulation”
IB and IC and dependent on the
VEB VEC applied VCB

Georgia Tech ECE 3040 - Dr. Alan Doolittle