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IEEE SOLID-STATE CIRCUITS SOCIETY NEWS
Winter 2007 Vol. 12, No. 1 www.ieee.org/sscs-news
Editor’s Column
W e appre-
ciate all
of your
feedback on our
first issue in Septem-
ed topic, with background articles
(that is, the ‘original sources’) and
new articles by experts who
describe the current state of affairs
in technology and the impact of the
that address the theme:
(1) “A 30 Year Retrospective on
Dennard's MOSFET Scaling
Paper,” by Mark Bohr of Intel
Corporation;
ber, 2006 on “The original papers and/or patents. (2) “Device Scaling: The Treadmill
Technical Impact of The theme of the Winter 2007 that Fueled Three Decades of
Moore's Law.” With the Winter, 2007 issue is “The Impact of Dennard's Semiconductor Industry Growth,”
issue, we are continuing our new Scaling Theory.” by Pallab Chatterjee of i2 Tech-
policy of mailing a hard copy of the This issue contains one Research nologies;
SSCS News to all 11,500 members. Highlights article: “Analog IC Design (3) “Recollections on MOSFET
This issue is the first of four that SSCS at the University of Twente,” by Scaling,” by Dale Critchlow,
plans to publish annually (one each Bram Nauta, Head of the IC Design the University of Vermont;
in Winter, Spring, Summer, and Fall). Group at the University of Twente, (4) “The Business of Scaling,” by
The goal of every issue is to be a The Netherlands. The issue also Rakesh Kumar, TCX, Inc. Tech-
self-contained resource on a select- contains seven short feature articles nology Connexions;
(5) “A Perspective on the Theory
of MOSFET Scaling and its
IEEE Solid-State Circuits Society AdCom Impact,” by Tak Ning, IBM;
President: Newsletter Coeditor:
Richard C. Jaeger Mary Y. Lanzerotti (6) “Impact of Scaling and the
Alabama Microelectronics Center IBM T.J. Watson Research Center environment in which the Scal-
Auburn University, AL myl@us.ibm.com
jaeger@eng.auburn.edu Fax: +1 914 945 1358 ing developed
Fax: +1 334 844-1888 at that time," by Yoshio Nishi, Stan-
Elected AdCom Members at Large
Vice President:
Terms to 31 Dec. 07: ford University;
Willy Sansen
K. U. Leuven Bill Bidermann (7) "It's All About Scale," by Hans
David Johns
Leuven, Belgium Stork, TI.
Terri Fiez
Secretary: Three original papers by Den-
David A. Johns Takayasu Sakurai
University of Toronto Mehmet Soyuer nard, from 1972 (IEDM Conference),
Toronto, Ontario, Canada Terms to 31 Dec. 08:
1973 (IEDM Conference), and 1974
Treasurer: Wanda K. Gass
Rakesh Kumar Ali Hajimiri (IEEE Journal of Solid-State Cir-
Technology Connexions Paul J. Hurst cuits), are also reprinted in this
Poway, CA Akira Matsuzawa
issue.
Ian Young
Past President:
Terms to 31 Dec. 09: Thank you for taking the time to
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University of California John J. Corcoran read the SSCS News. We appreciate
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©Copyright IBM
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All rights reserved.
Reproduced by
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Corporation.
Winter 2007 Volume 12, Number 1
Editor’s Column . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
President’s Message . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Corrections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
RESEARCH HIGHLIGHTS
Analog IC Design at the University of Twente . . . . . . . . . . . . . . . . . .5
TECHNICAL LITERATURE
A 30 Year Retrospective on Dennard’s MOSFET Scaling Paper . . .11
Device Scaling: The Treadmill that Fueled Three Decades of Semi-
conductor Industry Growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Recollections on MOSFET Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . .19
The Business of Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
A Perspective on the Theory of MOSFET Scaling and its Impact . .27
The Impact of Scaling and the Scaling Development Environment 31
It’s All About Scale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
Design of Micron MOS Switching Devices . . . . . . . . . . . . . . . . . . . .35
20 Ion Implanted MOSFET’s with Very Short Channel Lengths . . . . . . .36
Design of Ion-Implanted MOSFET’s with Very Small Physical Dimensions 38
PEOPLE
An Interview with James Meindl - 2006 IEEE Medal of Honor Recipient 51
Hugo De Man Awarded for Leadership in Integrated Circuit Design . .53
Yannis P. Tsividis to Receive IEEE Kirchhoff Award . . . . . . . . . . . . . . . . . . .56
IEEE Educational Innovation Award to Terri Fiez . . . . . . . . . . . . . . . . . . . . .58
16 New Speakers Diversify SSCS Distinguished Lecturer Program . . . . . .61
New Senior Members . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
Tools: How to Write Readable Reports and Winning Proposals . . . . . . . .67
CHAPTER NEWS
51 SSCS Awards $35,000 in Chapter Subsidies . . . . . . . . . . . . . . . . . . . . . . . .69
Far East Chapters Meet in Hangzhou, China . . . . . . . . . . . . . . . . . . . . . .70
V. Oklobdzija Offers IEEE DL Talks in Western Australia . . . . . . . . . . . .71
Denver Hosts Technical Seminars on Cutting-Edge CMOS Technology .72
CONFERENCES
Second A-SSCC Considers Challenges for the e-Life . . . . . . . . . . .74
Solid-State Circuits Conference Will Focus on Nano-Era Synergy . .76
Invitation from the ISSCC 2007 Chair . . . . . . . . . . . . . . . . . . . . . . . .75
AACD Conference Will Convene on 27-29 March 2006 . . . . . . . . .78
NEWS
SSCS AdCom Election for 2007-2009 Term . . . . . . . . . . . . . . . . . . . . . . .80
IEEE Design Council Newsletter Completes Inaugural Year . . . . . . . . . .80
56 IEEE Teaching Awards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .81
Call for Nominations: SSCS Predoctoral Fellowships . . . . . . . . . . . . . . . .82
Corrections
In the article entitled “Overview of the caption for Figure 4 should read: and the first commercially-available
CMOS Technology Development in Fig. 4 Gate leakage current in integrated circuit in Figs 3 & 4. I am
the MIRAI Project,” by Toshiaki MIRAI HfAlON formed by Layer-by- particularly fond of the transistor,
Masuhara and Masataka Hirose in Layer Deposition and Annealing since it is one of the very few prod-
the September 2006 issue, the last (LL-D&A) 4). ucts that I designed myself that
sentence in the Section entitled actually went into production.
“New Circuits and System Technolo- (a) Comparison of gate leakage cur-
gy - Post-fabrication Adaptive rent in MOSFETs with HfAlON
Adjustment” contains an incorrect gate insulator and HfSiON 5).
expression, which is corrected as in (b) Cross sectional TEM micrograph
the underlined expression in the fol- of HfAlON/SiO2/Si gate stack
lowing sentence: formed by Layer-by-Layer Depo-
“As shown in Fig. 3, the devel- sition and Annealing.
oped tool successfully extracted the
34 model parameters in 23 hours The following corrections pertain
with a PC and resulted in a mean to the reprint of “Lithography and
RMS error of 1.83% for benchmark the Future of Moore’s Law” (Moore,
MOSFETs.” 1995) in the September 2006 issue: Fig. 3. Photomicrograph of the first
In the Section, “New Gate Stack I have reproduced photomicro- commercial planar transistor.
Technology with High-k Materials”, graphs of the first planar transistor continued on page 10
RESEARCH HIGHLIGHTS
RESEARCH HIGHLIGHTS
RESEARCH HIGHLIGHTS
RESEARCH HIGHLIGHTS
which has a loss of 33 dB at the Nyquist frequency of
2.5GHz [8] . The eye diagram for various duty-cycles
is shown in Figure 9: for this 10m long cable 66% is
the optimum duty-cycle.
The PWM technique can compensate for higher
loss compensation (33 dB in contrast to approximate-
ly 20dB for 2 tap symbol-spaced FIR) because the
resulting spectrum has a better match to the skin-
Fig 7: Basic circuit of Power up-converter. Fig. 8: Transmitting a “1” using PWM pre-emphasis: tun-
ing the duty-cycle of the 1-0 pattern can compensate for
the cable response.
not known and is free to be chosen in a given
range.
effect and dielectric loss of the cable. Still only one
Pulse Width Modulation Cable Equalizer tuning “knob” is required to fit the transfer function to
For digital data communication over copper cables, the cable. Moreover the technique is insensitive to
electronic equalizer circuits are used to compensate slew-rate distortion and requires only two discrete
for the losses and reflections over the cables. Thanks amplitudes at the TX output (with a continuously
to these electronic circuits, higher data rates can be adjustable duty-cycle), which makes it suitable for
achieved over relatively cheap cables. Examples are modern CMOS technologies. The technique was also
USB and LAN. successfully applied earlier for very long on-chip RC
A well known technique used at the transmitter limited interconnects by Daniel Schinkel and Eisse
side is pre/de-emphasis, effectively high-pass filtering Mensink [7].
the transmitted signal. This way the low-pass charac-
teristic of the cable is compensated for. These trans-
mit pre-emphasis filters are generally implemented
with Finite Impulse Response (FIR) filters, most often
with just a few symbol spaced taps.
As an alternative to FIR filters Daniel Schinkel and
Jan-Rutger Schrader proposed Pulse Width Modula-
tion (PWM) on a digitally coded signal [7,8]: If a ‘1’-bit
has to be transmitted, a 1-0 pattern is transmitted in
one bit time and if a ‘0’-bit has to be transmitted a 0-
1 pattern is transmitted in one bit time. This is similar
to Manchester coding but with adjustable, non-50%
duty-cycle. The duty-cycle of the 1-0 and 0-1 pattern
is chosen in such a way that it compensates for the
cable loss. This is illustrated in Figure 8, where the Fig 9: 5Gb/s eye patterns of transmitted signals (TX) and
duty-cycle of a 1-0 pattern is varied and the corre- received signals (RX) for duty-cycle settings of 100% (nor-
sponding cable responses are plotted. mal data) , 66% (optimal PWM) and 50% (overcompen-
Thus, by changing the duty-cycle, the transmitted sated PWM) over 10m RG-58CU cable.
spectrum, in which the lower frequencies are attenu-
ated, is tuned for the high-frequency loss of the cable. Optical Detectors in Standard CMOS
In a real application an adaptive loop with return- Traditionally, in optical communication extremely
channel communication takes care for this tuning, high data rates have to be achieved over long dis-
similar as in a conventional FIR approach. A test chip tances. Therefore optical communication is the
achieved 5Gb/s over 25m of RG-58U coaxial cable domain of expensive exotic technologies and the high
RESEARCH HIGHLIGHTS
costs associated with it can be shared between many thanks to the low roll off, even +/- 20% spread in
users. For optical communication over short distances time constants hardly affects the time pulses. The
(meters) or very short distances (optical interconnect), resulting chip achieved 3Gbit/sec in standard 0.18μm
cost issues, however, do play a crucial role. There- CMOS, with a BER of 10-11 at an optical input power
fore, we started a project to integrate an optical detec- of 25μW [9]. The speed limitation was in the elec-
tor in standard CMOS technology; the optical data sig- tronic circuit, and is expected to scale with technolo-
nal can now shine directly on a digital CMOS chip. gy. This result enables high speed optical inputs for
Due to the availability of low-cost high-speed laser at standard CMOS chips.
850nm wavelength and the compatibility with both
inexpensive plastic fibers and with photo-generation Conclusion
in silicon, our work mainly uses this 850nm. Several examples of new design methodologies have
An essential part of an optical detector in CMOS is been illustrated. These methodologies benefit from
the integrated photodiode structure, shown in the left- modern CMOS technology and may be helpful for
most inset in Figure 10. future system integration. More work can be found at
the URL: http://icd.ewi.utwente.nl
Acknowledgements
The work described in this article has been carried
out by many students; however, without the supervi-
sion or help from Eric Klumperink, Anne Johan
Annema, Ed van Tuijl, Ronan van der Zee, Gerard
Wienk and Henk de Vries, these results would not
have been here. This work has been funded by: STW,
FOM and MESA+. Philips and CERN are acknowledged
for providing silicon access.
References
[1] F. Bruccoleri, E.A.M. Klumperink, B. Nauta,
“Wide-Band CMOS Low-Noise Amplifier Exploit-
Fig. 10: Transmitting a “1” using PWM pre-emphasis: tun-
ing Thermal-Noise Canceling”, IEEE Journal of
ing the duty-cycle of the 1-0 pattern can compensate for
the cable response.
Solid-State Circuits, Vol. 39, No. 2, pp. 275 -282,
February 2004.
Incident photons are absorbed in the silicon at tens [2] S. Chehrazi, A. Mirzaei, R. Bagheri, A. A. Abidi;
of microns deep, much deeper than any junction in “A 6.5 GHz wideband CMOS low noise amplifi-
standard CMOS. In the absorption process, electrons er for multi-band use”, 2005 IEEE Custom Inte-
and holes are generated and most of them slowly dif- grated Circuits Conference18, pp. 801 - 804, Sep-
fuse to the pn-junctions where the actual detection tember 2005.
takes place. The slow diffusion causes the -3dB band- [3] I. Bloom and Y. Nemirovsky, “1/f noise reduc-
width of the photodiode to be in the order of 5 MHz, tion of metal-oxide semiconductor transistors by
which causes a serious speed problem. In literature cycling from inversion to accumulation”, Applied
authors generally modify the technology, e.g. to allow Physics Letters, vol. 58, no. 15, pp. 1664–1666,
high voltages and very wide depletion layers to boost Apr. 1991.
the speed of the carriers, however this implies that [4] A.P. van der Wel , E.A.M. Klumperink , J. Kol-
non-standard CMOS has to be used. The maximal hatkar , E. Hoekstra, M. Snoeij , C. Salm, H.
speed reported in standard CMOS so far has been Wallinga and B. Nauta “Low Frequency Noise
700Mbit/sec. Phenomena in Switched MOSFETs”, IEEE Journal
Ph.D. student Sasa Radovanovic implemented of Solid State Circuits, Vol. 42, No.3, March 2007.
another solution. Although the -3dB frequency is [5] E. Mensink, E.A.M. Klumperink, B.Nauta, “Dis-
very low, the roll-off per decade of frequency tortion Cancellation by Polyphase Multipath Cir-
appears to be very low as well; only 3 to 4 dB per cuits,” IEEE TCAS-I, pp. 1785-1794, Sept. 2005.
decade, up to in the low GHz region. Therefore, Sasa [6] R. Shrestha, E.A.M. Klumperink, E. Mensink, G.
used an analog equalizer, with opposite frequency Wienk, B. Nauta, “A Polyphase Multipath Tech-
characteristic after the transimpedance amplifier fol- nique for Software Defined Radio Transmitters”,
lowing the diode to get a flat overall response up to IEEE Journal of Solid State Circuits, Vol. 41,
a few GHz. One might assume that the production No.12, Dec 2006.
spread in time constants between the equalizer and [7] D. Schinkel., E. Mensink, E.A.M. Klumperink,
the diode itself might ruin the performance, but A.J.M. van Tuijl, B. Nauta, “A 3Gb/s/ch Transceiver
RESEARCH HIGHLIGHTS
for 10-mm Uninterrupted RC-Limited Global On- 0.13-μm CMOS”, IEEE Journal of Solid-State Cir-
Chip Interconnects”, IEEE Journal of Solid State cuits, Vol. 41, No. 4, pp.990-999, April 2006.
Circuits, Vol. 41, No. 1, pp. 297- 306, Jan. 2006. [9] S. Radovanovic, A.J. Annema, B. Nauta, “A 3
[8] J.H.R. Schrader, E.A.M. Klumperink, J.L. Vissch- Gb/s optical detector in standard CMOS for 850
ers, B. Nauta, “Pulse-Width Modulation Pre nm optical communication” IEEE Journal of
Emphasis applied in a Wireline Transmitter, Solid-State Circuits, Volume 40, No.8, Pg:1706 -
achieving 33dB Loss Compensation at 5-Gb/s in 1717, Aug. 2005.
About the Author CTIT Research Institute. His current research interest
Bram Nauta was born in Hengelo, is high-speed analog CMOS circuits. Besides, he is
The Netherlands. In 1987 he also part-time consultant in industry and in 2001 he
received the M.Sc degree (cum co-founded Chip Design Works.
laude) in electrical engineering from His Ph.D. thesis was published as a book: Analog
the University of Twente, Enschede, CMOS Filters for Very High Frequencies, (Springer, 1993)
The Netherlands. In 1991 he and he received the “Shell Study Tour Award” for his
received the Ph.D. degree from the Ph.D. Work. From 1997-1999 he served as Associate Edi-
same university on the subject of tor of IEEE Transactions on Circuits and Systems -II; Ana-
analog CMOS filters for very high frequencies. log and Digital Signal Processing, and in 1998 he served
In 1991 he joined the Mixed-Signal Circuits and as Guest Editor for IEEE Journal of Solid-State Circuits.
Systems Department of Philips Research, Eindhoven From 2001 to 2006 he was Associate Editor for IEEE
the Netherlands, where he worked on high speed AD Journal of Solid-State Circuits and he is also member of
converters and analog key modules. In 1998 he the technical program committees of ISSCC, ESSCIRC,
returned to the University of Twente, as full professor and Symposium on VLSI circuits. He is co-recipient of the
heading the IC Design group, which is part of the ISSCC 2002 “Van Vessem Outstanding Paper Award.”
TECHNICAL ARTICLES
TECHNICAL ARTICLES
gate lengths were roughly the same size as other min- improved performance and power. But this 1974
imum process features, but starting with the 0.35 μm work ignored the impact of transistor sub-threshold
generation, gate lengths have been scaling faster than leakage on overall chip power. Sub-threshold leakage
0.7x per generation to realize performance advan- was relatively low in the 1970’s and was a tiny con-
tages, even though gate pitch has been scaling at the tributor to total power consumption on logic circuits.
normal rate. This has been a key factor in micro- But after 30 years of scaling, VT has scaled to the point
processors achieving >3 GHz operating frequencies where sub-threshold leakage has increased from lev-
sooner than most experts thought possible even 10 els of <10-10 amps/mm to >10-7 amps/μm. Due to leak-
years ago. It is exciting to see in Figure 3 how far we age constraints, it will be difficult to further scale VT
have taken Dennard’s scaling law by comparing the 1 and thus it will also be difficult to scale operating volt-
mm transistor described in his 1974 paper to the 35 age.
nm gate length transistor used in Intel’s 65 nm gener- Another key assumption in Dennard’s scaling law
ation logic technology that started high volume man- was the ability to scale gate oxide thickness. Gate
ufacturing in 2005 [2]. The Intel transistor shown in oxide scaling has been a key contributor to scaling
Figure 3 provides an example of an emerging trend improvements over the past 30 years, but this trend is
among semiconductor manufacturers: the introduc- also slowing due to leakage constraints (see Figure 4).
tion of new structures and materials to extend transis- Intel’s 65nm generation transistors use a SiO2 gate
tor scaling. In this case the new feature is selectively dielectric with a thickness of 1.2 nm [2]. This dielectric
deposited SiGe source-drains to provide strained sili- is only about 5 silicon atomic layers thick and repre-
con for improved transistor performance [3]. sents what is likely the limit to which SiO2 can be
Just as there have been questions about the end of scaled. Not only are we running out of atoms, but gate
Moore’s Law, there have also been questions about oxide leakage due to direct tunneling current is becom-
the end of MOSFET scaling. In both cases, the answer ing a noticeable percentage of overall chip power.
is that the end is not yet in sight, although we face Dennard’s scaling law assumed that channel dop-
growing challenges in their continuation. Voltage scal- ing concentration could be continually increased to
ing has been an extremely important component of enable shorter channel lengths with the appropriate
MOSFET scaling because it maintains constant electric VT. When channel doping concentration gets too high
field, which is important for reliability, and it lowers
transistor power, which is needed to maintain con-
stant power density. But even in the early days of
MOSFET scaling it was difficult to follow ideal voltage
scaling requirements because of the need to use
industry standard voltages, such as 12V, 5V, 3.3V, etc.
Eventually we were able to deviate from standard
voltage levels on key products such as microproces-
sors and were free to adjust product voltage levels to
meet specific performance and power targets. More
recently, however, voltage scaling has run into lower
limits imposed by threshold voltage (VT) scaling limits
[4]. Dennard’s scaling law assumed that VT would Figure 4: Gate oxide thickness trend for Intel logic
scale along with operating voltage, and thus provide technologies
TECHNICAL ARTICLES
dielectrics, metal gates and multiple-gate devices have
been or will be introduced to continue scaling. So
although the letter of “Dennard’s Law” can no longer
be followed, it has gotten us very far over the past 30
years and the spirit is alive and well in transistor R&D
facilities around the world.
References
[1] R. Dennard, et al., “Design of ion-implanted
MOSFETs with very small physical dimensions,”
IEEE Journal of Solid State Circuits, vol. SC-9, no.
5, pp. 256-268, Oct. 1974.
Figure 5: Copper interconnects with low-_ dielectrics from [2] P. Bai, et al., “A 65nm logic technology featuring
Intel’s 65 nm logic technology 35nm gate lengths, enhanced channel strain, 8
two problems occur: 1) carrier mobility and perform- Cu interconnect layers, low-k ILD and 0.57 μm2
ance degrade due to increased impurity scattering, 2) SRAM cell,” International Electron Devices Meet-
source and drain junction leakage increases due to ing Technical Digest, pp. 657-660, 2004.
direct band-band tunneling. Junction leakage is [3] K. Mistry, et al., “Delaying forever: Uniaxial
already a limiter for ultra-low power integrated cir- strained silicon transistors in a 90nm CMOS tech-
cuits and will eventually be a limiter for mainstream nology,” Symposium on VLSI Technology Digest
microprocessor products. of Technical Papers, pp. 50-51, 2004.
Although Dennard’s paper is best known for artic- [4] Y. Taur and E. Nowak, “CMOS devices below 0.1
ulating MOSFET scaling rules, less noticed was the μm: How high will performance go?” Interna-
paper’s description of interconnect scaling results, as tional Electron Devices Meeting Technical Digest,
reproduced here in Table II. The key point of this pp. 215-218, 1997.
table is that scaled interconnects, unlike scaled tran- [5] M. Bohr, “Interconnect scaling - The real limiter
sistors, do not speed up. Scaled interconnects provide to high performance ULSI,” International Elec-
roughly constant RC delays because the reduction in tron Devices Meeting Technical Digest, pp. 241-
line capacitance is offset by an increase in line resist- 244, 1995.
ance. This was not much of a concern in 1974 when
interconnect delay was typically a small portion of About the Author
circuit clock cycle times. But more modern logic tech- Mark Bohr is an Intel Senior Fellow
nologies have been wrestling with the constraints and Director of Process Architecture
imposed by interconnect delay and interconnect den- and Integration. He is a member of
sity [5], and have been addressing these constraints by Intel’s Logic Technology Development
adding more metal layers, converting from aluminum group located in Hillsboro, Oregon,
to more conductive copper wires, and replacing SiO2 where he is responsible for directing
dielectrics with low-κ dielectrics to reduce capaci- process development activities for
tance (see Figure 5). Intel’s advanced logic technologies.
As briefly described above, scaling transistors He joined Intel in 1978 and has been responsible for
beyond the 65 nm generation will clearly have more process integration and device design on a variety of
challenges to contend with. It is also commonly rec- process technologies for dynamic RAM, static RAM and
ognized that following the simple scaling rules microprocessor products. He is currently directing devel-
described by Dennard and his team back in 1974 is opment activities for Intel’s 32 nm logic technology.
now no longer a sufficient strategy to meet future Bohr was born in Chicago, Illinois in 1953. He
transistor density, performance, and power require- received the B.S. degree in industrial engineering in
ments. But ours is a very inventive industry and new 1976 and the M.S. degree in electrical engineering in
transistor technologies such as strained silicon, high-κ 1978, both from the University of Illinois, Urbana-
Table II: Scaling Results for Interconnect Lines (from Dennard) Champaign. In 1998 he received the Distinguished
Alumnus Award from the University of Illinois depart-
ment of Electrical and Computer Engineering. Bohr is
a Fellow of the Institute of Electrical and Electronics
Engineers and was the recipient of the 2003 IEEE
Andrew S. Grove award. In 2005 he was elected to
the National Academy of Engineering. He holds 42
patents in the area of integrated circuit processing and
has authored or co-authored 40 published papers.
TECHNICAL ARTICLES
TECHNICAL ARTICLES
improvements in process control, cycle-time, and overall temperature control. Some of the initial MMST work
flexibility and continue the scaling of devices to deep on RTP lamps was performed in collaboration with
submicron to cost effectively. In particular, the MMST Stanford University. Applied Materials, Inc. subse-
Program demonstrated the technical feasibility of 100% quently introduced RTP on their Centura HT™ cluster
single-wafer processing, dynamic/object-oriented Com- tool. MMST also created the first lithography cluster
puter-Integrated-Manufacturing (CIM), real-time/model- tool and the concept of the vacuum carrier which is
based process control, in-situ sensors, 95% dry process- more popularly knows as the SMIF box.
ing, and integrated mini environments.
At that time, state-of-the-art commercial wafer fabs SIA Industry Roadmap
used a mix of approximately 60% single-wafer and In November 1992, 179 of the key semiconductor tech-
40% batch processing equipment. Since then, com- nologists of the US gathered in Irving, Texas for a his-
plete sets of commercial single-wafer process tools toric workshop to create a common vision for the course
have become available and are the norm for deep of the semiconductor industry for the next 15 years
submicron manufacturing. based on scaling technology8. The group consisted pri-
The most significant contribution of MMST to sin- marily of scientists and engineers from the US Semicon-
gle-wafer processing was in the area of Rapid Thermal ductor Industry and a liberal sprinkling of academics,
Processing (RTP). In contrast to large furnaces for government agencies and national laboratories. The
thermal processing, the MMST program developed workshop, sponsored by the Semiconductor Industry
processing chambers in which single wafers were Association and coordinated by Semiconductor Research
heated by lamps under multi-zone, closed-loop wafer- Corporation and Sematech, created the roadmap below.
1992 SIA Overall Roadmap Technology Characteristics
TECHNICAL ARTICLES
Five areas of critical challenges that could decrease ments of the entire industry on the key technology
the rate or even stop the progress of scaling of Semi- issues has indeed been an enabler for scaling down
conductor technology were identified: to 90nm. The top three among these are:
• Patterning material and processes for device
structures below 0.25μm 1. Sub-wavelength optical lithography (including
• Electrical interconnections, both on and off chip OPC/Resolution Enhancement Techniques):
• Electrical test, time cost and capability
• Design, modeling, simulation capability for all Advances in scanners and resist technology
elements of IC technology and products enabled printing features less than one-half of the
• Software capability, availability and quality for all light wavelengths. Chemically amplified resists,
aspects of IC technology and production. light polarization, phase shifting techniques (alter-
As we look back at the last 15 years now at the end nating apertures and attenuated), as well as com-
of 2006, this roadmap has truly focused the invest- prehensive Model Based Optical Proximity Correc-
ment and made most of the predictions come true. tions of critical layer layouts, are the key enablers.
TECHNICAL ARTICLES
by circuit designers. One of the key parameters is due to in-situ equipment sensor/FDC deployment.
poly linewidth, since it has the dominant effect on
MOS transistor electrical performance. For 90nm 5. Compact device models:
technologies, more than 50% of the variance in poly
line width comes from within-die (within field) vari- Below 100 nm, compact device models must
ations. The next component is die-to-die. The per- accommodate microscopic (i.e., “non-bulk”) physi-
centage of systematic variations increases with cal effects with minimal impact on overall compu-
device scaling. For 90nm NMOS transistors, it reach- tational complexities. BSIM has filled this role for
es 40% of the overall Across Chip Variance (ACV). many technology generations as the workhorse,
both for model characterization and node-to-node
Transistors behave differently based upon the technology predictions. It continues to have the
neighborhood layout pattern due to printability and confidence of industry and seems likely to remain
stress/strain effects. Moreover, printability and in service (with the possible exception of RF) down
Chemical Mechanical Polishing (CMP) cause signif- to about 45 nm.
icant variations in interconnect parameters such as
resistance and capacitance. More recent MOS models are formulated as func-
tions of surface potential, rather than threshold
2. New device architecture (UTB, dual gates) less voltage, in the channel and s/d edges. Surface
dependent on channel doping fluctuations: potential is directly linked to intrinsic channel
charge dynamics and enables addition of important
Despite quite a few novel device architectures pro- physical effects with an economy of model com-
posed in recent years (FinFET, Ultra Thin Body plexity. The formulation admits an expression for
Transistor, Inverted T FET), the bulk CMOS device transistor drive current that is continuous from
architecture is used virtually exclusively at 45 nm. accumulation to saturation, thereby avoiding the
It will most likely dominate the 32 nm nodes, necessity of matching multiple regions.
although SOI substrates are gaining more accept-
ance. This leaves the device performance variations Compact models at 65 nm have high priority needs
very susceptible to random dopant fluctuations. for improvement:
Performance boosters are additive and help, but (a) scalability of sub-threshold currents and output
also create additional variability sources which resistance from short-to-long channel lengths,
forces circuit designers to accept much higher vari- due largely to lateral doping non-uniformities
ability and as well as leakage currents. (b) dependence of noise on voltage and geometry;
i.e., considering 1/f noise dependence on ran-
3. Material improvements: high-k for gate dielectrics, dom noise trap occurrences
porous low-k for interconnects: (c) capabilities for handling geometrical statistical
fluctuations which affect noise, threshold volt-
Several candidates for high-k materials have been age and drive current.
explored; but although Hf or Zr based oxides/sili-
cates provide attractive dielectric constant values The above problems become more severe at 45 nm,
and are stable, they do require interfacial SiO2 lay- along with the following additional priorities:
ers between high-k layers and substrate/polysili- (1) gate current scaling and dependences on novel
con. The final stack is not as beneficial anymore. (e.g., multi-layer) gate stacks,
Hence, high-k gate dielectrics are not employed in (2) carrier mobility in the channel due to layout-
the vast majority of 45 nm technologies and only in induced stress/strain,
combination with metal gates do they have a (3) statistical variations stemming from random
chance at 32 nm. dopant placements,
(4) ballistic transport of carriers in intrinsic channel
4. Advanced process control (especially feed forward): and,
(5) quantum mechanical effects due to confine-
Given the increasing complexity and small process ment in thin films.
windows, yield variability is a very significant prob-
lem. Baseline process variability keeps on increas- Summary
ing (tails of wafer yield distributions) and the pres- Scaling theory has been the organizing principle of the
ent metrology/inspection static sampling plans fail progress of the semiconductor industry throughout
at detecting excursions in-line. New approaches for three decades. It has created a framework for contin-
yield relevant SOC and APC are needed to take ued improvement in density and cost performance
advantage of the increased process observables and facilitated the desegregation of the entire industry
TECHNICAL ARTICLES
About the Author
around design and manufacturing. Few concepts in Dr. Pallab Chatterjee is Executive
our time have had as much influence on the economy. Vice President, Solutions Officer and
Chief Delivery Officer of i2 Tech-
Acknowledgement nologies, Inc.
I would like to thank Ping Yang, Bob Doering, He is responsible for Solutions
Andrzej Strojwas, Robert Dutton, Bill George, Operations, which includes Solu-
Lawrence Arledge, and Alberto Sangiovanni-Vincen- tion business units for SRM and
telli for providing perspectives on the various aspects MDM, Research and Development,
of impact of scaling on the semiconductor industry for Information Technology, Global Solution Center,
this paper. Global Customer Solution Management and i2’s
India Operations.
References During his tenure at i2 Dr. Chatterjee has overseen the
[1] R.H. Dennard, F.H. Gaensslen, V.L. Rideout, E. evolution of i2’s industry-leading solutions, including the
Bassous, andA.R. LeBlanc, “Design of Ion- development and delivery of the i2 Agile Business
Implanted MOSFET’s with Very Small Physical Process Platform and the company’s new-generation
Dimensions,” IEEE Journal of Solid-State Circuits, supply chain management solutions. His extensive glob-
Oct. 1974. al management experience and an in-depth understand-
[2] Cheney, D.W. and Grimes, W.W. Japanese Tech- ing of i2’s market-leading supply chain solutions from a
nology Policy: What’s the secret (February 1991), customer's perspective have made him a valuable addi-
Council on Competitiveness, pp. 1-26. tion to the i2 team since his arrival in January 2000.
[3] P. K. Chatterjee, W. R. Hunter, T. C. Holloway, Chatterjee worked at Texas Instruments from 1976-
and Y. T. Lin, “Technology Induced Non-Con- 2000. During his tenure there he held various execu-
stant Field Scaling and its Impact on Submicron tive positions. Under his leadership as senior vice
Device Performance,” Dev. Res. Conf., Cornell, president of Research and Development and chief
June 1980 technology officer, the Texas Instruments Technology
[4] Alberto Sangiovanni-Vincentelli, Editorial, Spe- Labs became known as a standard for excellence
cial Issue on CAD of VLSI, IEEE Transactions of acknowledged by both academia and industry. As TI’s
Circuits and Systems, July 1981. and Richard senior vice president and chairman of the Manufac-
Newton, Donald O. Pederson, Alberto Sangio- turing Excellence team, he was responsible for man-
vanni-Vincentelli, and Carlo Sequin, Design Aids ufacturing improvements which delivered hundreds
for VLSI: The Berkeley Perspective, IEEE Transac- of millions of dollars in bottom-line improvement. As
tions on Circuits and Systems, Vol. CAS-28, No. president of TI’s Personal Productivity Products (cal-
7, pp. 660-680, July 1981 culators and PC business), he contributed to increas-
[5] D. A. Antoniadis and R. W. Dutton, Models for ing Texas Instruments’ market share and managed
Computer Simulation of Complete IC Fabrication more than $1.5 billion worldwide. In the role of chief
Process. IEEE J. Solid-State Circuits, SC-14(2):412- information officer, he led the global i2 and SAP
430, and Robert Dutton: Father of TCAD- implementation and process transformation for Texas
http://www10.edacafe.com/nbc/articles/view_ar Instruments.
ticle.php?articleid=315936 During Chatterjee’s tenure at Texas Instruments, he
[6] W. Maly, A.J. Strojwas and S. W. Director, “VLSI was a TI senior fellow in 1985, an IEEE fellow in 1986,
Yield Prediction and Estimation - A Unified and received the IEEE J. J. Ebers award in 1986. He
Framework,” IEEE Trans. on CAD of ICAS, Spe- was elected a member of the National Academy of
cial Issue on Statistical Design, Jan.1986 Engineers in 1997.
[7] R.R. Doering and D.W. Reed, “Exploring the Lim- Chatterjee has been awarded numerous patents and
its of Cycle Time for VLSI Processing,” Technical has written several publications on the high technolo-
Digest of the 1994 Symposium on VLSI Technol- gy industry. He earned a Bachelor of Technology
ogy, pp. 31-32, Honolulu, Hawaii, June 7, 1994. degree in electronics and communication engineering
[8] Semiconductor Technology Workshop Conclu- from the Indian Institute of Technology, Kharagpur,
sions Report 1992. Linda Wilson, International India. As a student there, he was awarded the Presi-
Technology Roadmaps for Semiconductors dent of India Gold Medal as the class valedictorian and
Sematech and http://www.reedelectronics.com/ the B.C. Roy Memorial Gold Medal for extracurricular
semiconductor/article/CA490081 excellence. He received his master's and doctorate
[9] A. J. Strojwas, “Conquering Process Variability: A degrees in electrical engineering from the University of
Key Enabler for Profitable Manufacturing in Illinois, and was awarded a honorary Doctor of Sci-
Advanced technology Nodes”, Keynote Paper, ence Degree from Indian Institute of Technology,
ISSM 2006, Tokyo, Japan, September 2006 Kharagpur, India.
TECHNICAL ARTICLES
TECHNICAL ARTICLES
oxides from the audience many of whom were strug- Vacuum Science and Technology (13) which showed
gling with making reliable 100nm oxides.) This was the practicality of scaling to submicron devices and
soon followed with a 1973 IEDM paper (6) utilizing described the hierarchical wiring system needed to
ion-implantation to allow improved scaled transistors. take advantage of scaling. In 1985 he published an
The paper normally considered the “scaling paper” authoritative paper on scaling to deep sub-micron
was published in 1974 (7). In 1975 Dennard, with oth- dimensions in Physica (14).
ers, proceeded to demonstrate scaling on a complex Although he was not listed as an author, Bob had a
chip by scaling an existing 8Kb PMOS chip (original- major influence on the keystone 1988 paper (15) by Bijan
ly designed in 3.75μm ground rules) by 3X and fabri- Davari, et al, which described the 2.5V, 0.25μm CMOS
cating it with 1.25μm feature sizes using electron technology which was key to the replacement of bipolar
beam lithography (8). A photo of several cells and technologies for high-speed main-frame computers and
support circuits is shown in Fig. 2. Hwa Yu developed microprocessors.
an anisotropic dry etching process which made it pos-
sible to delineate the 1.25μm features. The success of Technical Challenges and Advances to
this experiment had a major impact on how seriously Make Scaling Feasible
people took scaling both inside and outside IBM. Even though the principles of scaling, and the under-
Attention was then turned to high-speed logic and standing that the MOSFET could be scaled existed in
SRAM. One of our goals was to lay the groundwork for the early 1970s, the benefits of scaling could not have
replacing bipolar transistors in mainframe computers. been accomplished without many other technical
This culminated in a series of eight papers (9) describ- advances in the industry over the decades. There were
ing a 1μm technology that took advantage of the scaling remarkable improvements in optical lithography, dry
principles. Bob was coauthor of several of the papers. etching, ion implantation, insulators, polycide and sili-
Bob continued to push the envelope with a large num- cided contacts, multilevel metal, planarized BEOL, cop-
ber of publications in cooperation with a succession of per wiring, shallow trench isolation, packaging, design
young researchers. Describing these papers is well techniques, testing and characterization, design tools
beyond the scope of this paper. However, a few key and system architecture. The switch to CMOS was criti-
papers stand out. In 1984, with Giorgio Baccarani and cal to containing the level of chip power.
Matt Wordeman, he generalized the scaling theory to take These improvements allowed scaling of the MOS-
into account the parameters which did not scale well (10). FET technology to meet the expectations of the indus-
In 1985, he co-authored a definitive paper on 1μm CMOS try following the trends popularized in recent decades
(11) with Yuan Taur and others. In 1995, a paper laying as Moore’s Law (16).
the groundwork for a 0.1mm CMOS on SOI technology
was published by Ghavam Shahidi and others (12). The Long Delay before Switching to Lower
In addition, Dennard furthered the cause and pre- Power Supply Voltages
sented the challenges of MOSFET scaling to technical While the advantages of scaling were apparent to many
audiences outside the IEEE organization. For exam- people, it was two decades before the power supply
ple, he published a paper in 1981 in the Journal of was scaled for mainstream products, Fig. 3. The indus-
Fig. 2 Photograph of portion of experimental 8Kb DRAM Fig. 3 Transition of mainstream MOSFET products from 5V
chip using 1.25μm features which was scaled from a to scaled voltages occurred two decades after scaling
3.75μm design. principles were defined.
TECHNICAL ARTICLES
try settled on 5V supplies in the early 1970s to be com- large number of outstanding engineers in IBM, other
patible with bipolar TTL. In fact, this was a lower volt- companies and Universities who shared an incredible
age than what could have been possible for the dimen- 40 year journey in MOSFET technology.
sions being used. Consequently, the improvements in
transistor design and chip fabrication were applied to References
5V technologies, significantly improving component [1] To the Digital Age: Research Labs, Start-Up Compa-
packing density and performance over several genera- nies, and the Rise of the MOS Technology; Ross K
tions. Further, the LDD device (17) allowed reliable Bassett, The John Hopkins University Press, 2002.
operation and high performance at 5V. The tighter tol- [2] “Design and characteristics of n-channel Insulated-
erances necessary to make scaling practical improved gate Field-Effect Transistors”; D. L. Critchlow, R. H.
5V designs as well, reducing the performance advan- Dennard, S. E. Schuster; IBM Journal of Research
tage of full scaling. Most importantly, the whole com- and Development, vol. 17, no. 5, p. 430, 1973.
puter industry was optimized around a 5V power sup- [3] “An investigation of the potential of MOS transistor
ply and very successful products were being delivered. memories”; P. Pleshko and L. M. Terman; IEEE
An earlier switch to a lower voltage would have been Transactions on Electronic Computers, vol. EC-15,
greatly disruptive to the designers, the manufacturers No. 4, pp. 423-427, August 1966.
and in the marketplace. [4] “Design of micron MOS switching devices”; R. H.
The 5V standard finally collapsed in the late 1980s Dennard, F. H. Gaensslen, L. Kuhn, H. N. Yu; IEDM
due to three major forces: Tech. Dig., pp. 168 - 170, December 1972.
1) The power dissipation at 5V became untenable, [5] “Fundamental limitations in microelectronics – 1.
especially as the circuits were driven to higher MOS technology”; B. Hoeneisen and C. Mead, Solid
speeds. State Electronics, vol. 15, no. 7, pp. 819-829, July 1972.
2) The portable, battery-powered applications were [6] “Ion implanted MOSFETs with very short channel
demanding higher performance, low power and lengths”; R. H. Dennard, F. H. Gaensslen, H. N. Yu,
compatibility with battery voltages. V. L. Rideout, E. Bassous, A. LeBlanc; IEDM Tech.
3) The inherent speed advantages of scaled transis- Dig., pp. 152 - 155, December 1973.
tors, as tolerances improved, were needed for [7] “Design of ion-implanted MOSFET's with very small
high-speed applications. physical dimensions”; Robert H. Dennard, Fritz H.
Once the dam broke there was tremendous change Gaensslen, Hwa-Nien Yu, V. Leo Rideout, Ernest
within a few years, first to 3.3V then to 2.5V, etc. Bassous, Andre R. LeBlanc; IEEE Journal of Solid-
State Circuits, vol. 9, pp. 256 - 268, October 1974.
The Impact of MOSFET Scaling has been [8] “Fabrication of a miniature 8-Kbit memory chip
Monumental using electron beam exposure”; H. Yu, R. Dennard,
Scaled CMOS has become the dominant technology T.H. P. Chang, C. Osburn, V. DiLonardo and H.
for digital and many analog applications and will con- Luhn; J. Vac. Sci. Technol., vol. 12, no. 6, p.1297.
tinue to be a fundamental driving force of the indus- Nov./Dec. 1975.
try for years to come. [9] “1 mm MOSFET VLSI technology: Parts I-VIII”; IEEE
By the late 1980s, DRAM had long displaced fixed Journal of Solid-State Circuits, vol. SC-14, pp. 240-
head files in the file gap. In recent years, we have 301, April 1979.
been seeing flash memory replacing disk drives in [10] “Generalized scaling theory and its application to a
many portable applications. _ micrometer MOSFET design”; Giorgio Baccarani,
The 2.5V CMOS technology (15) was the death Matthew R. Wordeman, Robert H. Dennard; IEEE
knell for high performance silicon bipolar technolo- Trans. Electron Devices, vol. 31, pp. 452 - 462, April
gies in high-end computers. BiCMOS had gathered 1984.
some momentum, but when designers came to real- [11] “A self-aligned 1-μm-channel CMOS technology
ize that very effective off-chip drivers could be made with retrograde n-Well and thin epitaxy”; Yuan
using MOSFET circuits, BiCMOS soon faded. By the Taur, Genda J. Hu, Robert H. Dennard, Lewis M.
early 1990s, the high-end computers were being Terman, Chung-Yu Ting, Karen E. Petrillo; IEEE
designed using low-voltage scaled CMOS (18) replac- Journal of Solid-State Circuits, vol. 20, pp. 123 - 129,
ing bipolar chips. Bipolar and BiCMOS have found February 1985.
new applications for very high-speed applications [12] “A room temperature 0.1μm CMOS on SOI”; G. G.
using more exotic technologies. Shahidi, C. A. Anderson, B. A. Chappell, T. I. Chap-
pell, J. H. Comfort, B. Davari, R. H. Dennard, R. L.
Acknowledgements Franch, P. A. McFarland, J. S. Neely, T. H. Ning, M.
The author is indebted to B. Davari, R. H. Dennard, R. Polcari, J. D. Warnock; IEEE Transactions on
E. J. Nowak and L. M. Terman for providing informa- Electron Devices, vol. 41, issue 12, pp. 2405-2412,
tion for this paper. He also wishes to acknowledge a Dec. 1994.
TECHNICAL ARTICLES
[13] “CMOS scaling for high performance and low About the Author
power – The Next Ten Years”; B. Davari, R. H. Dale Critchlow is a retired electrical
Dennard, and G. G. Shahidi; Proceedings of the engineer with 35 years experience
IEEE, Vol. 83, No. 4, pp. 595-606, April, 1995. Earli- at IBM and 15 years in academia.
er version published in Nikkei Microelectronics, pp. He received his Ph.D. in Electrical
144-1`54, September 1994. Engineering from Carnegie Institute
[14] “MOSFET miniaturization – From one micron to the of Technology in 1956. After teach-
limits”; R. H. Dennard and M. R. Wordeman; Physi- ing at CIT for two years, he joined
ca B + C, vol. 129, pp. 3-15, 1985. IBM Research. He became one the
[15] “A high performance 0.25 μm CMOS technology”; early members of the NMOS MOSFET project in the
B. Davari, W. H. Chang, M. R. Wordeman, C. S. Oh, T. J. Watson Research Center in 1964, where he
Y. Taur, K. E. Petrillo, D. Moy, J. J. Bucchignano, H. managed the MOSFET device and circuit design
Y. Ng, M. G. Rosenfield, F. J. Hohn, M. D. Rodriguez; work through 1976. Next he transferred to the IBM
IEDM Tech. Dig., pp. 56 - 59, December 1988. Components Division, first in East Fishkill, NY, and
[16] Research Highlights with focus on Moore’s Law; then in Essex Junction, VT where he managed a
IEEE Solid-State Circuits Society Newsletter, vol. 20, group responsible for the advanced development of
no. 3, September 2006. MOSFET logic and memory technologies. He retired
[17] “Fabrication of high-performance LDDFET's with from IBM in 1993 and was faculty member at the
oxide sidewall-spacer technology”; Paul J. Tsang, University of Vermont until 2005. He has active in
Seiki Ogura, William W. Walker, Joseph F. Shepard, IEEE activities and has published a number of
Dale L. Critchlow; IEEE Trans. Electron Devices, vol. papers and patents.
29, pp. 590 - 596, April 1982. Dr. Critchlow is a Life Fellow of the Institute of
[18] “Possibilities of CMOS Mainframe and its Impact on Electrical and Electronic Engineers, an IBM Fel-
Technology R&D”: A. Masaki, Symposium on VLSI low and a member of the National Academy of
Technology, May 28-30, 1991, pp. 1-4. Engineers.
1 Ross Bassett wrote an excellent Ph.D. thesis and published a book [1] on the early history of the MOSFET technology. The appendices have a wealth of
authoritative historical information.
2 Concurrently, B. Hoeneisen and C. Mead published a theoretical paper [5] projecting that a 0.4mm transistor with 14nm oxides and 2V operation could
be built.
1. Introduction
Since the introduction of the first commercial integrat-
ed circuit in 1961 and the introduction of the first
microprocessor in 1971, the semiconductor industry
has experienced a healthy growth of approximately
15% CAGR4. In the mean time semiconductor sales
have grown more rapidly than the worldwide elec-
tronics sales and the worldwide GDP and are now Figure 1 Worldwide semiconductor sales
TECHNICAL ARTICLES
products. Although the growth rate is predicted to slow used to estimate yield. Examples are the number of
down, the industry has demonstrated much resilience vias and contacts in a design, the number of metal layer
in combating technical and business challenges. cross-overs, and the like. A detailed discussion of these
Taking advantage of scaling, the industry has is beyond the scope of this paper.
increased the number of components per chip steadily,
as shown in Figure 2. This figure shows the historical 3. Overall Cost Reduction
increase in the number of transistors per chip (39% per A key factor in managing the business feasibility of scal-
year average) in industry leading microprocessors4. This ing is the semiconductor industry’s ability to maintain an
trend shows a doubling of the transistors per chip every overall CPF reduction of 29%/year3 to 35%/year4. Within
two years. This trend was predicted by Gordon Moore any given process technology node the die cost and CPF
and has become known as “Moore’s Law”1,2. The figure are reduced due to the manufacturing and defectivity
also shows the reduction of minimum feature size at an learning curves. This is shown graphically in a concep-
average rate of 12% per year. The number of transistors tual chart, Figure 3. As the volume of wafer and product
per chip has increased 6 orders of magnitude while the shipments ramps up in each technology node, there is a
minimum feature size has been scaled down over two reduction in die cost (and therefore CPF) due to a reduc-
orders of magnitude during the last 35 years. tion in wafer cost; this decrease is due to process opti-
mization and the manufacturing learning curve. Also, die
cost is reduced as yield enhancement efforts are imple-
mented, defectivity is reduced, yield increases and there-
fore NDPW increases. A compilation of defect density
trends indicates an average reduction of 19% per year
over the last 35 years4. The technology “cross-over”
occurs when the CPF in the newer technology is below
the CPF in the older technology.
where wafer cost is determined by factors such as Figure 3 Cost per function and technology “cross-over”
points
facilities and equipment depreciation, materials, labor
and processing cost, and 4. Cost Reduction from Technology Scaling
Net Die per Wafer (“NDPW”) = Yield* Gross Die per An industry target has been to reduce minimum fea-
Wafer (“GDPW”) ture size by around 30% at every process technology
transition. Table 1 shows the various process technol-
Gross Die per Wafer (“GDPW”) = Total usable Area on ogy generations or “technology nodes” used since the
the Wafer / Die Area mid 1980’s.
Yield is a function of defectivity (or defect density) Table 1 Scaling ratio for various technology nodes since
and critical area. Contributors to defectivity are usually the mid 1980’s
categorized as systematic (or gross) and random
defects3. Many different yield models have been used in
the industry. Simple models, such as the Poisson and
the Murphy models using the die area as the critical
area were prevalent in the early days. The Bose-Einstein
model using die area but identifying a defectivity per
critical layer has been used extensively in recent years8,9.
Custom models exist at captive suppliers. More recent-
ly, sophisticated calculations of critical area based on
information embedded in the design database are being
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processors with increasing transistors per chip6. For a. For a 10mm die in 0.8um technology processed
example, in 1989 the 8086 and 80286 microprocessors on 150mm and 200mm wafers, W=1.35, g=1.95.
fit into an area that was a fraction of the area in pre- Therefore, die cost on 200mm wafers = 69% of
vious technology generations. Then the 80486 was die cost on 150mm wafers.
introduced in the new node with a larger die size and b. For a 10mm die in 130nm technology processed
4x the number of transistors of the previous proces- on 200mm and 300mm wafers, W=1.75, g=2.45.
sor in the previous node. Therefore, die cost on 300mm wafers = 71% of
die cost on 200mm wafers.
TECHNICAL ARTICLES
overhead of the input/output structures, the scribe technical challenges at the 32nm node will
lane, etc. If the die size gets too big, the cost per gate require ever increasing capital and manpower
increases due to the increased complexity. For sim- investments.
plicity, gate count is assumed here to be an equiva- b. Manufacturing entities have worked diligently to
lent 2-input NAND gate count. Each equivalent gate accelerate the manufacturing and defectivity
uses four transistors. The optimum gate density and learning curves.
cost per gate can be converted to transistor density c. Creative co-design of process and design consid-
and cost per transistor. The actual transistor count per erations has been called for by many authors10
chip increases rapidly as larger amounts of memory is and are being implemented to manage chal-
included on the die. For reference, one of Intel’s Pen- lenges such as increased leakage and standby
tium processors is reported with 55M transistors (14M power.
equivalent gates) in a 90nm technology4. Referring to d. New product introductions on the 65nm tech-
Figure 10, this data point will be considered reason- nology node have been made at leading edge
ably well optimized in our analysis, since it is located users in the 2005 time frame; the cross-over
near the minimum, just at the cusp of the steep slope point varies but is expected to be in 2007. Lead
and marked by the arrow. The shape of the curve is products on 45nm will likely be announced in
affected by parameters such as wafer cost, defect den- 2007 with a cross-over in 2009. These timetables
sity, physical and electrical design rules, design tools’ indicate a less than 3 year cycle for the intro-
packing efficiency. duction of new technology nodes.
e. As in the past, technical solutions for the next
technology (32nm), e.g. the use of double-expo-
sure lithography, will add significantly to capital,
process development and therefore wafer cost.
cents/KGates
8. Summary
cents/KGates
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However, a typical MOSFET in production in the The opportunity for scaled CMOS to break into
early 1970’s had a gate oxide of about 100 nm in high-end applications came when the industry
thickness, a channel length of about 5 μm, and a worked together to established voltage standards
power supply voltage of 5 V or larger. As explained below 5 volt. Once it was recognized that CMOS at
in a paragraph below, the performance of these high- less than 5 V could be accepted by the market, engi-
voltage MOSFET circuits was simply much too inferi- neers wanted to reduce CMOS voltage as fast as pos-
or compared to the performance of silicon bipolar cir- sible. As an illustration of this “lower is better” mind
cuits. Bipolar was the high-performance technology, set at the time regarding CMOS voltage, Figure 1 is a
the backbone of computers and high-performance plot of three CMOS voltage roadmaps proposed in the
electronics, while MOSFET was the low-cost technol- early and mid 1990’s. At the first semiconductor tech-
ogy for applications where performance was not nology roadmap workshop in 1992 [6], there was a
required. consensus that CMOS power supply voltage would
The benefit of applying the scaling theory to MOS- not be below 2 V until 2004. In 1995, it was proposed
FET technology, especially to CMOS technology, that leading CMOS should have a power supply volt-
seemed obvious and exciting. If we just follow the age of 1.8 V in 1999. By the time the 1997 roadmap
rules and scale the CMOS devices by a factor of ten, [7] was prepared, it was proposed that the voltage in
the resulting circuits will be ten times faster. For more 1999 should be 1.5 V instead. For several years now,
than two decades following the publication of the advanced CMOS microprocessor chips use a power
MOSFET scaling theory, CMOS engineers focused supply voltage of 1 to 1.2 V.
much of their efforts in scaling down the physical size
of CMOS transistors. However, instead of scaling
down the power supply voltage, they left it at 5 volts,
which was the standard for practically all integrated
circuits. There was simply little or no market for inte-
grated-circuit chips using non-standard voltages. Such
constant-voltage scaling of MOSFET quickly ran into
two major difficulties, namely the power density of a
CMOS circuit in switching increased very rapidly by a
factor of κ2 to κ3, and the fast increasing electric field
caused hot-electron and oxide reliability problems.
Power density was not much of a problem because
the integration level was still relatively low so that the Fig. 1. Proposed power supply voltage trends for CMOS.
(After references [6] and [7])
total chip power was readily manageable. However,
device engineers had to devote much effort to devel- Reducing CMOS voltage makes the fabrication
op practical techniques, such as LDD (Lightly Doped process for scaled CMOS less complex and hence
Drain) [4], in order to bring the reliability issues under lowers the cost. For one thing, process steps used to
control. Controlling hot-electron effects added signifi- implement LDD can be omitted. With the introduction
cant cost to the CMOS chips. of scaleable technology elements such as shallow-
Scaling at constant voltage severely limited the per- trench isolation and dual-poly gate (i.e., p+-polysili-
formance potential of CMOS as well, particularly for con gate for p-FET and n+-polysilicon gate for n-FET)
driving long wires and driving signals off chip. To first to the fabrication of reduced-voltage CMOS circuits,
order, the performance for driving a capacitance load C as illustrated in Fig. 2, CMOS technology became
is CV/I, where V is the voltage swing and I is the cur- readily scaleable [8]. The same device schematic in
rent delivered by the transistor. For bipolar circuits, V is Fig. 2 was used to represent several generations of
typically about 200-400 mV for driving on chip, and CMOS technology, making the migration of devices
about 800 mV for driving off chip. Thus, at 5 V, the volt- and circuits from one generation to the next relative-
age swing of CMOS circuits was much too large for ly simple to implement, and exhibited more pre-
high-performance applications. Besides, in the late dictable results. For the decade that followed, there
1970’s, bipolar engineers also developed a theory for was accelerated progress throughout the semiconduc-
scaling bipolar circuits [5] which guided the rapid tor industry scaling such a CMOS device structure to
development of faster and lower-power bipolar circuits. ever smaller dimensions, as evidenced by the acceler-
For more than twenty years after the MOSFET theory ated rate at which CMOS power supply voltage was
was published, CMOS remained a low-cost technology reduced.
limited to applications where performance was not an With CMOS channel lengths scaled to around 100
important factor. When performance was needed, nm and voltages reduced to around 1 volt, the per-
scaled advanced bipolar technology was used. formance of digital CMOS became comparable to that
TECHNICAL ARTICLES
early 2000’s. These limits are the high tunneling current
through the thin gate insulator and the high device off
current. That we reached these scaling limits so soon
should come as no surprise. In the case of gate insulator
thickness, it was shown that scaling CMOS to the regime
where gate tunneling current is appreciable has little
impact on the device characteristics [10]. Today, leading-
edge CMOS microprocessor chips employ gate oxide lay-
ers as thin as 1 nm, which is pretty much the limit set by
acceptable gate tunneling current. The limit due to high
device off current has been looming there since the very
beginning, as shown in Eq. (1). In Eq. (1), the factor
[V g − V t − V d /2]/κ scales only if the threshold voltage
Fig. 2. Schematic of a CMOS device structure that was Vt is scaled. If Vt is not scaled, this factor is smaller than
scaleable to deep sub-micron dimensions. (After Davari, [8]) expected from scaling and the resultant device speed is
less than expected from scaling. As the CMOS voltage
of digital bipolar. The era of bipolar for high-per- was scaled below about 2 V, device designers had to
formance digital circuits came to an end when IBM reduce Vt in order to achieve the intended device per-
decided to replace bipolar by CMOS as the technolo- formance targets. Reducing Vt has the effect of increasing
gy for mainframe computers. At first, the CMOS main- the device off current, as illustrated schematically in Fig.
frame processors was not really as fast as the bipolar 4. Reducing Vt repeatedly for several generations has lead
versions, but the highly scaleable properties of CMOS to a dramatic increase of CMOS device off current.
allowed CMOS processors to catch up in just a few Today, CMOS circuits no longer have negligible standby
years, as shown in Fig. 3 [9]. Since then, CMOS has power dissipation. Instead, the performance of leading-
become unquestionably the technology for all digital edge CMOS logic chips is limited by a combination of
applications. device off current and gate tunneling current.
Fig. 3. IBM S/390 mainframe uniprocessor performance. Fig. 4. Schematic showing the increase of device off current
(After Rao et al., [9]) when Vt is reduced, where Vt2 < Vt1.
Every technology has its limits, and CMOS is no Without the ability to reduce gate insulator thickness
exception. The fact that the CMOS device structure and device threshold voltage any further, CMOS device
depicted in Fig. 2 is highly scaleable was both good designers find it difficult to increase device speed by the
news and bad news. The good news was that it usual means of scaling device channel length. Today,
became relatively straight forward to establish an device engineers focus primarily on technology innova-
industry-wide technology roadmap, and every leading tions for continued device performance improvement
semiconductor company wanted and was able to beat from one generation to the next. The most notable inno-
the roadmap targets. Again, this is evidenced by the vations that have been successfully developed and put
increasingly aggressive rate of CMOS power supply into volume manufacturing to date include using silicon-
voltage reduction illustrated in Fig. 1. System devel- on-insulator (SOI) as the wafer substrate [11], using
opers and consumers certainly benefited tremendous- embedded SiGe in the source/drain region of p-channel
ly from the faster-than-projected rate of CMOS scaling. FET’s to improve hole mobility [12], and using highly-
The bad news was that the industry also reached the stressed dielectric films on top of n-channel FET’s to
limits of CMOS scaling at rate faster than anticipated. improve electron mobility [13]. Each of these innovations
Two of the limits of CMOS scaling were reached in the offers incremental but appreciable improvements to the
TECHNICAL ARTICLES
speed and/or power dissipation of CMOS circuits. Cir- Industry Association.
cuit designers can always tradeoff the speed improve- [8] B. Davari, “CMOS technology scaling, 0.1 μm and
ment for lower power dissipation. Judging from the pre- beyond,” IEDM Tech. Dig., pp. 555-558 (1996).
sentations at device conferences, it is reasonable to [9] G.S. Rao, T.A. Gregg, C.A. Price, C.L. Rao, S.J. Repka,
expect a steady stream of additional innovations for “IBM S/390 parallel enterprise servers G3 and G4,”
enhancing CMOS performance to become ready for IBM J. Res. Develop., Vol. 41, pp. 397-403 (1997).
manufacturing in the next decade. [10] H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S.
Nowadays, the concern is not the lack of innovative Nakamura, M. Saito, and H. Iwai, “Tunneling gate
ideas for improving CMOS performance, but the time oxide approach to ultra-high current drive in small-
and cost needed to bring a specific innovation from its geometry MOSFET’s,” IEDM Tech. Dig., pp. 593-596
concept stage to volume manufacturing. Most major (1994).
innovations take 10 ±5 years from concept to manufac- [11] G. G. Shahidi, A. Ajmera, F. Assaderaghi, R. J. Bolam,
turing, which is long compared to the 2 to 3 years to E. Leobandung, W. Rausch, D. Sankus, D. Schepis,
scale CMOS from one generation to the next (the linear L. F. Wagner, K. Wu, and B. Davari, “Partially-deplet-
dimension is reduced by a factor of 0.7 and the circuit ed SOI technology for digital logic,” IEEE ISSCC
density is improved by a factor of 2 each generation). Technical Digest, pp. 426-427 (1999).
Going forward, it is important that circuit and system [12] S. Thompson, N. Anand, M. Armstrong, C. Auth, B.
designers recognize this paradigm shift in CMOS devel- Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J.
opment and plan their product strategies accordingly. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C.
Thanks to the insights provided by the simple theory Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T.
of MOSFET scaling, we have been able to make unprece- Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S.
dented progress in advancing CMOS technology over a Joshi, C. Kenyon, J. Klaus, S. Klopcic, J. Luce, Z. Ma,
period of about thirty years. In the process, we have run B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pear-
the course of CMOS development guided by the theory son, T. Sandford, R. Schweinfurth, R. Shaheed, S.
of scaling. We have left the period when leadership in Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang,
CMOS technology was judged by being the first to scale C. Weber, and M. Bohr, “A 90 nm logic technology
CMOS to the next dimensional node and entered a peri- featuring 50 nm strained silicon channel transistors, 7
od when leadership is judged more by being able to layers of Cu interconnects, low-k ILD, and 1 μm2
enhance chip-level performance through innovation. SRAM cell,” IEDM Tech. Dig., pp. 61-64 (2002).
[13] Most dielectric films are of high stress as deposited.
References Until recently, device engineers worked hard to min-
[1] R.H. Dennard, F.H. Gaensslen, H.-N. Yu, V.L. Ride- imize the stress in the deposited films to avoid pos-
out, E. Bassous, and A.R. LeBlanc, “Design of ion- sible deleterious effects such as wafer bowing and
implanted MOSFET’s with very small physical film cracking and/or peeling. To day, device engi-
dimensions,” IEEE J. Solid-State Circuits, Vol. SC-9, neers work hard to increase the stress in a control-
pp. 256- 268 (1974). lable manner to increase n-FET drive current.
[2] An account of the challenges and major milestones
in the development of n-channel MOSFET can be About the Author
found in the article by E.W. Pugh, D.L. Critchlow, Tak H. Ning received his Ph. D. degree
R.A. Henle, and L.A. Russell, “Solid state memory in physics from the University of Illi-
development in IBM,” IBM J. Res. Develop., Vol. 25, nois at Urbana-Champaign in 1971. He
pp. 585-602 (1981). joined IBM Thomas J. Watson
[3] F.M. Wanlass and C.T. Sah, “Nanowatt logic using Research Center in 1973. His early
field-effect metal-oxide semiconductor triodes,” IEEE technical contributions were in under-
ISSCC Technical Digest, pp. 32-33 (1963). standing hot-electron effects and in
[4] S. Ogura, P.J. Tsang, W.W. Walker, D.L. Critchlow, advanced bipolar technology. From
and J.F. Shepard, “Design and characteristics of the 1982 to 1991, he managed the silicon devices and tech-
lightly doped drain-source (LDD) insulated gate nology department in IBM Research, contributing to and
field-effect transistor,” IEEE Trans. Electron Devices, leading the research effort on CMOS, bipolar, DRAM,
Vol. ED-27, pp. 1359-1367 (1980). EEPROM and SOI. He was appointed an IBM Fellow in
[5] P.M. Solomon and D.D. Tang, “Bipolar circuit scal- 1991. In recent years, he has focused his technical activ-
ing,” IEEE ISSCC Technical Digest, pp. 86-87 (1979). ities on understanding the limits of CMOS as well as the
[6] Semiconductor Industry Association, 1992 Semicon- opportunities beyond CMOS. He received the 1989 IEEE
ductor Technology Workshop, Working Group Electron Devices Society J.J. Ebers Award and the 1991
Report, published in 1993. IEEE Jack A. Morton Award. He is a member of the
[7] The 1994 and 1997 National Technology Roadmaps National Academy of Engineering, and a fellow of the
for Semiconductors, published by Semiconductor IEEE and of the American Physical Society.
TECHNICAL ARTICLES
TECHNICAL ARTICLES
that this has survived because of its simplicity and About the Author
transparency. There have been enormous impacts Yoshio Nishi is a Professor in the
coming from the scaling principle, not only in the Department of Electrical Engineering
way we design devices and develop technology to (research) and in the Department of
meet requirements, but also on the semiconductor Material Science and Engineering at
device manufacturing industry as well as manufac- Stanford University He also serves as
turing equipment business by providing clear and Director of Stanford Nanofabrication
easily understandable directions with investment Facility of National Nanotechnology
timing. The scaling principle and Moore’s Law Infrastructure Network of US, and
have been inseparable in terms of providing a driv- Director of Research of Center for Integrated Systems.
ing force to technology research and development Professor Nishi Received a BS in material science and
and justifying huge investment for more advanced PhD in electronics engineering from Waseda University
infrastructures for manufacturing. It was because and the University of Tokyo, respectively.
scaling continuously provided 2x density of inte- He joined Toshiba R&D in the areas of research for semi-
gration at reduced cost per gate or bit with better conductor device physics and interfaces mostly in silicon,
performances to integrated circuits chips designed resulting in discovery of ESR PB Center at SiO2-Si interface,
and manufactured with more advanced technology the first 256bitMNOS non-volatile RAM, SOS 16bit micro-
in the past three decades. It should not be forgot- processor and the world first 1Mb CMOS DRAM. He was
ten that scalable design library has become one of also involved in MITI VLSI project for ultra short channel
the prerequisites for the design community, which MOS device technology research from 1976-1981.
cut down design cost increase coupled with enor- He moved to Hewlett-Packard in 1986 as the Director
mous progress made in computer aided design of Silicon Process Lab, followed by establishing ULSI
from logic design down to layout design capabili- Research Lab as the Founding Director.
ty. In 1995 he joined Texas Instruments, Inc as Senior VP
Today we are still thinking with the scaling prin- and Director of Research and Development for semicon-
ciple even though the scaling factor could be quan- ductor group, and implemented new R&D model for sil-
tized due to actual size approaching the integer icon technology development, followed by establishing
times an atomic size, and performance would be in the Kilby Center.
the same way as somewhat quantized by nature. In May, 2002, he became a faculty member of Stanford
This would force us to rethink scaling not just for University. His research interests cover nanoelectronic
the geometry scaling, but also consider a variety of devices and materials including metal gate/high k MOS,
new materials to keep the pace of improvement device layer transfer for 3D integration, nanowire devices
both in performance and cost. As we see the era for and resistance change non-volatile memory materials and
“nanoelectronics” either evolutionary and/or revolu- devices. He published more than 200 papers including
tionary challenges, this is a great moment at which conference proceedings, and co-authored/edited 9 books.
we all should appreciate what Dr. Dennard has He holds more than 70 patents in the US and Japan.
given to all of us. During the period of 1995-2002 he served SRC and
International Sematech as Board member, NNI Panel,
References MARCO Governing Council. etc. Currently he is an asso-
[1] R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. ciate member of the Science Council of Japan.
Rideout, E.Bassous and A. R. Le Blanc, “Design Dr. Nishi is a Fellow of IEEE, a member of Japan Soci-
of Ion-Impanted MOSFET’s with Very Small ety of Applied Physics and the Electrochemical Society.
Physical Dimensions,” IEEE J. Solid-State Circuits, Recent awards include the 1995 IEEE Jack Morton
SC-9, p. 256 (1974). Award, and the 2002 IEEE Robert Noyce Medal.
TECHNICAL ARTICLES
It’s All About Scale
Hans Stork, Texas Instruments, Inc., stork@ti.com
TECHNICAL ARTICLES
from metal gate electrodes by eliminating the deple- ber of mask layers has also increased rapidly. The
tion layer on the top side of the dielectric. Any size and cost of fabs has thus grown exponentially,
mobility degradation because of additional scatter- each supplying an ever larger fraction of the market,
ing will be overcome by the significant mobility and each generation requiring a larger investment
enhancements due to strain. In fact, the successful and higher market risk.
application of strain is a superb example of unan- Resource demands have also rapidly grown on the
ticipated improvements that work precisely because product side. Thanks to the ability to yield hundreds
of the new small scale of the devices. Many of the of millions of transistors on a single die, design teams
effects below 100nm introduce problematic behav- for chips are now equivalent to those that were
iors: tunneling contributes to leakage in thin required to build large computers. Product designs
dielectrics and high field junction profiles; line edge need to comprehend everything from knowing the
roughness in resists patterns results in excessive strengths and limitations of the process, to defining
short channel effects; and grain–boundary and side- and building the software infrastructure that support
wall scattering increase the resistivity of copper such sophisticated systems-on-a-chip.
wires with very small cross-sections. Low resistance
is critical to high efficiency use of the device prop- Scaling the Applications
erties. Contact and via resistance are therefore Absolute interconnect performance has become a
becoming a bigger concern going forward as their dominant speed limit and, consequently, variations in
properties scale non-linearly in the wrong direction. line-width and thickness add increasingly to the
And, as many now know, the capacitance of the design margin. While many effects are systematic, the
interconnect is approaching its physical limits as complexity of interconnect prevents a brute force
well. The low dielectric constant materials that computational solution. This has become typical of
reduce the k-value from 4 for silicon dioxide, to the technical problems to be solved at the design and
around 2.5 for heavily Carbon mixed compounds, application level. Conceptually, the problem of opti-
are mechanically weak and can interfere with pack- mizing interconnects to minimize delay and power is
aging robustness, as well as cause electrically lower governed by simple physics. However, the sheer size
breakdown voltages. of a problem like this, or that of RET or for that mat-
All these process and materials changes have ter, fab operations, is overwhelming. Not just for the
allowed density scaling to continue at its historical design teams, but frequently for their compute
pace of 2x every generation. The price has not only resources as well. And finally, the challenge is not
been more complexity, but also the introduction of overcome by solving a steady state or exact condition.
several design tradeoffs. Design innovations now Parameters are not perfectly controlled, and it is
need to limit static and dynamic power dissipation, becomingly increasingly clear that comprehending
tolerate escalating parameter variations, maximize variations is where the next breakthrough may be
increasingly restricted layout options, and incorporate needed. Nature gives us examples of how it has fig-
analog and RF functions at the low voltages compati- ured out that designing with imperfect and infinitely
ble with extremely small dimensions. variable components can be successful. Although
human communication may be effective while being
Scaling the Resources imperfect, other communication or computation tasks
Immersion lithography allows for effectively shorter cannot tolerate any practical errors.
wavelength and a higher NA lens design to improve For example, encouraging progress by the EDA
the lithographic patterning pitch. A manufacturable tool suppliers is trailing the needs for leading product
implementation requires cost effective throughput, designs. Integrating analog and RF functions in
defect density, and resist solution. The large increase advanced CMOS requires an architectural approach to
in capital equipment cost consumes the largest frac- maximize the features of density and speed, rather
tion of the process cost budget. As is the case for than the precision of analog components.
every process tool, to maintain cost effectiveness,
high throughput/automation is required to offset the Summary
initial capital outlays. But now the high volume Over the past 40 years the world has benefited from
capability of each tool requires the fabs to be ever exponential growth in the application of semiconduc-
larger to avoid one-of-a-kind tool challenges. In tors. Thanks to scaling transistor dimensions into the
addition, chips now may include over 10 layers of nanometer regime and scaling the manufacturing
interconnect. While the process is repeatable, the capabilities to produce billions of individual chips, the
interconnect fraction of a fab is easily half the fab industry has achieved economies of scale that allow
size because of the multitude of tools. The explosion what was once mainframe capability to be affordable
in process steps, represented typically by the num- to everyone in the world in something as small as a
TECHNICAL ARTICLES
cell phone. With many fundamental physical scaling area. Starting in 1987 he led an exploratory devices
limits still far away, this progress can and will contin- group which demonstrated record breaking SiGe
ue if demand for the applications supports the HBTs. Hans was awarded two Outstanding Techni-
increased investment necessary to get there. cal Achievement Awards from IBM. He has written
or co-authored nearly 100 cited papers and holds
eleven US patents. He was elected IEEE Fellow in
About the Author 1994 for his contributions to SiGe devices and
Johannes M.C. (Hans) Stork is Senior technology.
Vice President and Chief Technolo- Hans has served on various conference and IEEE
gy Officer of Texas Instruments committees, including IEDM, VLSI, and BCTM
Incorporated. As Director of the Sil- between 1986 and 1996. Presently, Dr. Stork serves on
icon Technology Development the Board of Directors of Sematech, and is chairman
organization, Dr. Stork’s primary of the Semiconductor Research Corporation (SRC)
responsibilities are the development Board of Directors. He has been a member of the SIA
of advanced CMOS, packaging and Technology Strategy Committee since 1999.
mixed signal process technologies. In 2000-2001, he participated as a technical advisor
He joined Texas Instruments in September 2001, to Government efforts on high performance comput-
after being the Director of the Internet Systems and ing benchmarks and the national security issues of
Storage Lab at HP Laboratories, Hewlett-Packard from Internet computing, and has recently been elected a
1999 until 2001. He had joined Hewlett-Packard in member of the advisory committee for the Emerging
1994, holding the position of Director of the ULSI Technology Fund in the state of Texas.
Research Lab between 1995 and 1999. Dr. Stork was born in Soest, The Netherlands, and
Dr. Stork started his professional career in 1982 received the Ingenieur degree in electrical engineering
at IBM's T.J. Watson Research Center as a research from Delft University of Technology, Delft, The Nether-
staff member in the bipolar technology and circuits lands, and holds a PhD from Stanford University.
T hese three reprints show the difference between conference and journal reporting in the 1970s. When the
concept of scaling first saw the light of day at IEDM in 1972, only an abstract remained as an archive report.
By 1973, the IEDM Digest provided a broader basic overview of Dennard’s report. Denard’s 1974 explana-
tion of scaling turned out to be the most cited article in the 51 year history of the JSSC, close to 700 times, accord-
ing to the last count in 2005 by the independent citation report firm, Thomson ISI (sscs.org/jssc/topcites.htm). The
mission of Journal of Solid-State Circuits is to provide the full archival source for important technical milestones
and fundamental explanations critical to the field.
TECHNICAL ARTICLES
TECHNICAL ARTICLES
The one-dimensional threshold model is adequate for implant was found to be somewhat less effective in
devices with long source-drain separation, but in practice minimizing the threshold decrease for narrow source
the short devices of interest suffer a decrease in threshold drain spacing. The sensitivity to the source and drain
voltage due to penetration of the drain field into the chan- junction depth and to the background doping was also
nel region normally controlled by the gate. These short investigated, and the results are shown in Table I.
channel effects have been studied using a two-dimen- These results show that there is little room for deviation
sional numerical model (3). The computed turn-on char- from the original design and justify the original choices.
acteristic is shown in Fig. 3 for two values of source-drain
spacing L in the range of one micron and for a relatively
long (10 micron) device, all normalized to the same
width-to-length ratio (W/L=1). A drain voltage of 4 volts
is applied in all cases, which is the maximum considered
for this design. The effect on the short devices is a shift of
the characteristic along the gate voltage axis. This repre-
sents a lowering of the threshold voltage. (Vt corresponds
to a drain current of about 10-7 amps above which the cur-
rent varies as (Vg-Vt)2 rather than exponentially with Vg.
Otherwise the device turns off properly.
Figure 4. Experimental threshold voltage as a function of
source-drain spacing compared to computed values.
Table 1
TECHNICAL ARTICLES
of 1 μ. Scaling relationships are presented which W f Work function difference between gate and substrate.
show how a conventional MOSFET can be s i , ox Dielectric constants for silicon and silicon dioxide.
Id Drain current.
reduced in size. An improved small device struc-
k Boltzmann’s constant.
ture is presented that uses ion implantation to κ Unitless scaling constant.
provide shallow source and drain regions and a L MOSFET channel length.
nonuniform substrate doping profile. One- μeff Effective surface mobility.
dimensional models are used to predict the sub- ni Intrinsic carrier concentration.
strate doping profile and the corresponding Na Substrate acceptor concentration.
threshold voltage versus source voltage charac- s Band bending in silicon at the onset of strong inversion for
teristic. A two-dimensional current transport zero substrate voltage.
model is used to predict the relative degree of b Built-in junction potential.
short-channel effects for different device param- q Charge on the electron.
TECHNICAL ARTICLES
state-of-the-art n-channel MOSFET [9] with a scaled-
down device designed following the device scaling
principles to be described later. The larger structure
shown in Fig. 1(a) is reasonably typical of commer-
cially available devices fabricated by using conven-
tional diffusion techniques. It uses a 1000-Å gate insu-
lator thickness with a substrate doping and substrate
bias chosen to give a gate threshold voltage Vt of
approximately 2 V relative to the source potential. A
Fig. 1. Illustration of device scaling principles with κ = 5.
(a) Conventional commercially available device structure.
substrate doping of 5 x 1015 cm-3 is low enough to give
(b) Scaled-down device structure. an acceptable value of substrate sensitivity. The sub-
strate sensitivity is an important criterion in digital
strate, this channel implant reduces the sensitivity of switching circuits employing source followers
the threshold voltage to changes in the source-to-sub- because the design becomes difficult if the threshold
strate (“backgate”) bias. This reduced “substrate sen- voltage increases by more than a factor of two over
sitivity” can then be traded off for a thicker gate insu- the full range of variation of the source voltage. For
lator of 350-Å thickness which tends to be easier to the device illustrated in Fig. 1(a), the design parame-
fabricate reproducibly and reliably. Second, ion ters limit the channel length L to about 5μ. This
implantation allows the formation of very shallow restriction arises primarily from the penetration of the
source and drain regions which are more favorable depletion region surrounding the drain into the area
with respect to short-channel effects, while maintain- normally controlled by the gate electrode. For a max-
ing an acceptable sheet resistance. The combination imum drain voltage of approximately 12-15 V this
of these features in an all-implanted design gives a penetration will modify the surface potential and sig-
switching device which can be fabricated with a nificantly lower the threshold voltage.
thicker gate insulator if desired, which has well-con- In order to design a new device suitable for small-
trolled threshold characteristics, and which has signif- er values of L, the device is scaled by a transformation
icantly reduced interelectrode capacitances (e.g., in three variables: dimension, voltage, and doping.
drain-to-gate or drain-to-substrate capacitances). First, all linear dimensions are reduced by a unitless
This paper begins by describing the scaling princi- scaling factor κ, e.g. tox = tox /κ , where the primed
ples which are applied to a conventional MOSFET to parameters refer to the new scaled-down device. This
obtain a very small device structure capable of reduction includes vertical dimensions such as gate
improved performance. Experimental verification of insulator thickness, junction depth, etc., as well as the
the scaling approach is then presented. Next, the fab- horizontal dimensions of channel length and width.
rication process for an improved scaled-down device Second, the voltages applied to the device are
structure using ion implantation is described. Design reduced by the same factor (e.g. V d s = V d s /κ ). Third,
considerations for this all-implanted structure are the substrate doping concentration is increased, again
based on two analytical tools: a simple one-dimen- using the same scaling factor (i.e., N a = κN a ). The
sional model that predicts the substrate sensitivity for design shown in Fig. 1(b) was obtained using κ = 5
long channel-length devices, and a two-dimensional which corresponds to the desired reduction in chan-
current-transport model that predicts the device turn- nel length to 1μ.
on characteristics as a function of channel length. The The scaling relationships were developed by
predicted results from both analyses are compared observing that the depletion layer widths in the
with experimental data. Using the two-dimensional scaled-down device are reduced in proportion to the
simulation, the sensitivity of the design to various device dimensions due to the reduced potentials and
parameters is shown. Then, detailed attention is given the increased doping. For example,
to an alternate design, intended for zero substrate
bias, which offers some advantages with respect to w s = {[2 s i (ψb + V s−sub /κ)]/qκN a }1/2 w s /κ. (1)
threshold control, Finally, the paper concludes with a
discussion of the performance improvements to be The threshold voltage at turn-on [9] is also decreased
expected from integrated circuits that use these very in direct proportion to the reduced device voltages so
small FET’s. that the device will function properly in a circuit with
reduced voltage levels. This is shown by the thresh-
DEVICE SCALING old voltage equation for the scaled-down device.
The principles of device scaling [7], [8] show in a con-
cise manner the general design trends to be followed V t = (tox /κox ){−Q eff + [2Si qκN a (ψ s + V s−sub /κ)] }
1/2
in decreasing the size and increasing the performance + (W f + ψ s ) V t /κ. (2)
of MOSFET switching devices. Fig. 1 compares a
TECHNICAL ARTICLES
In (2) the reduction in V t is primarily due to the due to the heavier doped substrate. Other scaling
decreased insulator thickness, tox /κ , while the relationships for power density, delay time, etc., are
changes in the voltage and doping terms tend to can- given in Table I and will be discussed in a subsequent
cel out. In most cases of interest (i.e., polysilicon section on circuit performance.
gates of doping type opposite to that of the substrate In order to verify the scaling relationships, two sets
or aluminum gates on p-type substrates) the work of experimental devices were fabricated with gate
function difference W f is of opposite sign, and insulators of 1000 and 200 Å (i.e., κ = 5). The meas-
approximately cancels out ψ s . ψ s is the band ured drain voltage characteristics of these devices,
bending in the silicon (i.e., the surface potential) at normalized to W /L = 1, are shown in Fig. 2. The two
the onset of strong inversion for zero substrate bias. It sets of characteristics are quite similar when plotted
would appear that the ψ terms appearing in (1) and with voltage and current scales of the smaller device
(2) prevent exact scaling since they remain approxi- reduced by a factor of five, which confirms the scal-
mately constant, actually increasing slightly due to the ing predictions. In Fig. 2, the exact match on the cur-
increased doping since ψb ψ s = (2kT/q) ln rent scale is thought to be fortuitous since there is
(N a /n i ). However, the fixed substrate bias supply some experimental uncertainty in the magnitude of
normally used with n-channel devices can be adjust- the channel length used to normalize the characteris-
ed so that (ψ s + Vsub ) = (ψ s + Vsub )/κ . Thus, by tics (see Appendix). More accurate data from devices
scaling down the applied substrate bias more than the with larger width and length dimensions on the same
other applied voltages, the potential drop across the chip shows an approximate reduction of ten percent
source or drain junctions, or across the depletion in mobility for devices with the heavier doped sub-
region under the gate, can he reduced by κ. strate. That the threshold voltage also scales correctly
All of the equations that describe the MOSFET by a factor of five√is verified in Fig. 3, which shows
device characteristics may be scaled as demonstrated the experimental I d versus V g turn-on characteris-
above. For example, the MOSFET current equation [9] tics for the original and the scaled-down devices. For
given by the cases shown, the drain voltage is large enough to
cause pinchoff and the characteristics exhibit the
μeff ox W /κ V g − V t − V d /2
Id = · expected linear relationship. When projected to inter-
tox /κ L/κ κ cept the gate voltage axis this linear relationship
(V d /κ) = I d /κ (3) defines a threshold voltage useful for most logic cir-
cuit design purposes.
is seen to be reduced by a factor of κ, for any given
set of applied voltages, assuming no change in mobil-
ity. Actually, the mobility is reduced slightly due to
increased impurity scattering in the heavier doped
substrate.
It is possible to generalize the scaling approach to
include electric field patterns and current density. The
electric field distribution is maintained in the scaled-
down device except for a change in scale for the spa-
tial coordinates. Furthermore, the electric field
strength at any corresponding point is unchanged
because V /x = V /x . Thus, the carrier velocity at any
point is also unchanged due to scaling and, hence,
any saturation velocity effects will be similar in both
devices, neglecting microscopic differences due to the
fixed crystal lattice dimensions. From (3), since the
device current is reduced by κ, the channel current
per unit of channel width W is unchanged by scaling.
This is consistent with the same sheet density of car-
riers (i.e., electrons per unit gate area) moving at the
same velocity. In the vicinity of the drain, the carriers
will move away from the surface to a lesser extent in
the new device, due to the shallower diffusions. Thus,
the density of mobile carriers per unit volume will be Fig. 2. Experimental drain voltage characteristics for (a)
higher in the space-charge region around the drain, conventional, and (b) scaled-down structures shown in
complementing the higher density of immobile charge Fig. 1 normalized to W/L = 1.
TECHNICAL ARTICLES
TECHNICAL ARTICLES
threshold control or, in the extreme, punchthrough at the edges of the gates. The gate-to-drain (or source)
high drain voltages. However, the shallower junctions overlap is estimated to be of the order of 0.2 μ. The
give a more favorable electric field pattern which high temperature processing steps that follow the
avoids these effects when the substrate doping con- implantations include 20 min at 900°C, and 11 min at
centration is properly chosen (i.e., when it is not too 1000°C, which is more than adequate to anneal out
light). the implantation damage without greatly spreading
The device capacitances are reduced with the ion- out the implanted doses. Typical sheet resistances
implanted structure due to the increased depletion were 50/ for the source and drain regions, and
layer width separating the source and drain from the 40/ for the polysilicon areas. Following the As75
substrate [cf. Figs. 4(a) and 4(b)], and due to the nat- implant, a final insulating oxide layer 2000-Å thick
ural self-alignment afforded by the ion implantation was deposited using low-temperature chemical-vapor
process which reduces the overlap of the polysilicon deposition. Then, the contact holes to the n+ and
gate over the source and drain regions. The thicker polysilicon regions were defined, and the metalization
gate insulator also gives reduced gate capacitance, but was applied and delineated. Electrical contact directly
the performance benefit in this respect is offset by the to the shallow implanted source and drain regions
decreased gate field. To compensate for the thicker was accomplished by a suitably chosen metallurgy to
gate oxide and the expected threshold increase, a avoid junction penetration due to alloying during the
design objective for maximum drain voltage was set final annealing step. After metalization an annealing
at 4 V for the ion-implanted design in Fig. 4(b), com- step of 400 °C for 20 min in forming gas was per-
pared to 3 V for the scaled-down device of Fig.4(a). formed to decrease the fast-state density.
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TECHNICAL ARTICLES
processing, the boron is redistributed as shown by the and a reasonably low substrate sensitivity, particular-
heavier dashed line. These predicted profiles were ly for V s−sub ≥ 1 V. For V s−sub < 1 V, a steep slope
obtained using a computer program developed by F. occurs because the surface inversion layer in the
F. Morehead of our laboratories. The program channel is obtained while the depletion region in the
assumes that boron atoms diffusing in the silicon silicon under the gate does not exceed D, the step
reflect from the silicon-oxide interface and thereby width of the heavier doped implanted region. For
raise the surface concentration. For modeling purpos- V s−sub ≥ 1 V, at inversion the depletion region now
es it is convenient to use a simple, idealized, step- extends into the lighter doped substrate and the
function representation of the doping profile, as threshold voltage then increases relatively slowly with
shown by the solid line in Fig. 5. The step profile V s−sub [11]. Thus, with a fixed substrate bias of -1 V,
approximates the final predicted profile rather well the substrate sensitivity over the operating range of
and offers the advantage that it can be described by a the source voltage (e.g., ground potential to 4 V) is
few simple parameters. The three profiles shown in reasonably low and very similar to the slope of the
Fig. 5 all have the same active dose. non- implanted 200-Å design. However, the threshold
Using the step profile, a model for determining voltage is significantly higher for the implanted design
threshold voltage has been developed from piecewise which allows adequate design margin so that, under
solutions of Poisson’s equation with appropriate worst case conditions (e.g., short-channel effects
boundary conditions [11]. The one-dimensional model which reduce the threshold considerably), the thresh-
considers only the vertical dimension and cannot old will still be high enough so that the device can be
account for horizontal short-channel effects. Results of turned off to a negligible conduction level as required
the model are shown in Fig, 6 which plots the thresh- for dynamic memory applications.
old voltage versus source-to-substrate bias for the ion- Experimental results are also given in Fig. 6 from
implanted step profile shown in Fig. 5. For compari- measurements made on relatively long devices (i.e.,
son, Fig. 6 also shows the substrate sensitivity charac- L = 10μ) which have no short-channel effects.
teristics for the nonimplanted device with a 200-Å These data agree reasonably well with the calculat-
gate insulator and a constant background doping, and ed curve. A 35 keV, 6 × 1011 atoms/cm2 implant was
for a hypothetical device having a 350-Å gate insula- used to achieve this result, rather than the slightly
tor like the implanted structure and a constant back- higher design value of 40 keV and 6.7 × 1011
ground doping like the nonimplanted structure. atoms/cm2.
TECHNICAL ARTICLES
TECHNICAL ARTICLES
In fact, the threshold for this case for a device with
L = 0.8μ is about the same as for an L = 1.0μ
device of the basic design. This important
improvement is apparently due to the reduced
depletion layer widths around the source and
drain with the lower voltage drop across those
junctions. Also, with these bias and doping condi-
tions, the depletion layer depth in the silicon
under the gate is much less at threshold, particu-
larly near the source where only the band bend-
ing, ψ s , appears across this depletion region,
which may help prevent the penetration of field
lines from the drain into this region where the
device turn-on is controlled.
TECHNICAL ARTICLES
TABLE I
SCALING RESULTS FOR CIRCUIT PERFORMANCE
TECHNICAL ARTICLES
will have their capacitances reduced by a factor of κ. high performance circuits by widening the power
This occurs because of the reduction by κ 2 in the area buses and by avoiding the use of n+ doped lines for
of these components, which is partially cancelled by signal propagation.
the decrease in the electrode spacing by κ due to Use of the ion-implanted devices considered in this
thinner insulating films and reduced depletion layer paper will give similar performance improvement to
widths. These reduced capacitances are driven by the that of the scaled-down device with κ = 5 given in
unchanged device resistances V /I giving decreased Table I. For the implanted devices with the higher
transition times with a resultant reduction in the delay operating voltages (4 V instead of 3 V) and higher
time of each circuit by a factor of κ. The power dissi- threshold voltages (0.9 V instead of 0.4 V), the current
pation of each circuit is reduced by κ 2 due to the level will be reduced in proportion to (V g − V t )2 /tox
reduced voltage and current levels, so the power- to about 80 percent of the current in the scaled-down
delay product is improved by κ 3 . Since the area of a device. The power dissipation per circuit is thus about
given device or circuit is also reduced by κ 2 , the the same in both cases. All device capacitances are
power density remains constant. Thus, even if many about a factor of two less in the implanted devices,
more circuits are placed on a given integrated circuit and n+ interconnection lines will show the same
chip, the cooling problem is essentially unchanged. improvement due to the lighter substrate doping and
decreased junction depth. Some capacitance elements
TABLE II such as metal interconnection lines would be essen-
SCALING RESULTS FOR INTERCONNECTION LINES tially unchanged so that the overall capacitance
improvement in a typical circuit would be somewhat
Parameter Scaling Factor less than a factor of two. The delay time per circuit
Line resistance, RL = ρL/Wt κ which is proportional to V C /I thus appears to be
Normalized voltage drop IRL/V κ about the same for the implanted and for the directly
Line response time RLC l scaled-down micron devices shown in Fig. 4.
Line current density I/A κ
SUMMARY
As indicated in Table II, a number of problems This paper has considered the design, fabrication, and
arise from the fact that the cross-sectional area of characterization of very small MOSFET switching
conductors is decreased by κ 2 while the length is devices. These considerations are applicable to high-
decreased only by κ. It is assumed here that the ly miniaturized integrated circuits fabricated by high-
thicknesses of the conductors are necessarily reduced resolution lithographic techniques such as electron-
along with the widths because of the more stringent beam pattern writing. A consistent set of scaling rela-
resolution requirements (e.g., on etching, etc.). The tionships were presented that show how a conven-
conductivity is considered to remain constant which is tional device can be reduced in size; however, this
reasonable for metal films down to very small dimen- direct scaling approach leads to some challenging
sions (until the mean free path becomes comparable technological requirements such as very thin gate
to the thickness), and is also reasonable for degener- insulators. It was then shown how an all ion-implant-
ately doped semiconducting lines where solid solu- ed structure can be used to overcome these difficul-
bility and impurity scattering considerations limit any ties without sacrificing device area or performance. A
increase in conductivity. Under these assumptions the two-dimensional current transport model modified for
resistance of a given line increases directly with the use with ion-implanted structures proved particularly
scaling factor κ. The IR drop in such a line is there- valuable in predicting the relative degree of short-
fore constant (with the decreased current levels), but channel effects arising from different device parame-
is κ times greater in comparison to the lower operat- ter combinations. The general objective of the study
ing voltages. The response time of an unterminated was to design an n-channel polysilicon-gate MOSFET
transmission line is characteristically limited by its with a 1-μ channel length for high-density source-fol-
time constant RLC, which is unchanged by scaling; lower circuits such as those used in dynamic memo-
however, this makes it difficult to take advantage of ries. The most satisfactory combination of subthresh-
the higher switching speeds inherent in the scaled- old turn-on range, threshold control, and substrate
down devices when signal propagation over long sensitivity was achieved by an experimental MOSFET
lines is involved. Also, the current density in a scaled- that used a 35 keV, 6.0 × 1011 atoms/cm2 B11 channel
down conductor is increased by κ, which causes a implant, a 100 keV, 4 × 1015 atoms/cm2 As75
reliability concern. In conventional MOSFET circuits, source/drain implant, a 350-Å gate insulator, and an
these conductivity problems are relatively minor, but applied substrate bias of –1 V. Also presented was an
they become significant for linewidths of micron ion-implanted design intended for zero substrate bias
dimensions. The problems may he circumvented in that is more attractive from the point of view of
TECHNICAL ARTICLES
threshold control but suffers from an increased sub- deduce W from the resistance of a long, slender, n+
threshold turn-on range. Finally the sizable perform- line. The channel resistance can be calculated from
ance improvement expected from using very small
MOSFET’s in integrated circuits of comparably small R chan = Vchan /I d
dimensions was projected. = (V d –I d (R s + R d + 2R c + R load ))/I d , (A2)
References
[1] F. Fang, M. Hatzakis, and C. H. Ting, “Electron-
beam fabrication of ion implanted high-perform-
ance FET circuits,” J. Vac. Sci. Technol., vol. 10,
p. 1082, 1973.
[2] J. M. Pankrantz, H. T. Yuan, and L. T. Creagh, “A
high-gain, low-noise transistor fabricated with
electron beam lithography,” in Tech. Dig. Int.
Electron Devices Meeting, Dec. 1973, pp. 44-46.
[3] H. N. Yu, R. H. Dennard, T. H. P. Chang, and M.
Hatzakis, “An experimental high-density memo-
ry array fabricated with election beam,” in ISSCC
Dig. Tech. Papers, Feb. 1973, pp. 98-99.
[4] R. C, Henderson, R. F. W. Pease, A. M.
Voshchenkow, P. Mallery, and R. L. Wadsack, “A
high speed p-channel random access 1024-bit
memory made with electron lithography,” in
Tech. Dig. Int. Electron Devices Meeting, Dec.
1973, pp. 138-140.
[5] D. L. Spears and H. I. Smith, “X-Ray lithography
Fig. 14. lllustration of experimental technique used to – a new high resolution replication process,”
determine channel length, L. Solid State Technol., vol. 15, p.21, 1972.
[6] S. Middlehoek, “Projection masking, thin pho-
The experimental values of W and R chan used in Fig. toresist layers and interference effects,” IBM J.
14 were obtained as follows. First, the sheet resist- Res. Develop., vol. 14, p. 117, 1970.
ance of the ion-implanted n+ region was determined [7] R. H. Dennard, F. H, Gaensslen, L. Kuhn, and H.
using a relatively large four-point probe structure. N. Yu, “Design of micron MOS switching
Knowing the n+ sheet resistance allows us to compute devices,” presented at the IEEE Int. Electron
the source and drain resistance R s and R d , and to Devices Meeting, Washington, D.C., Dec. 1972.
TECHNICAL ARTICLES
[8] A. N. Broers and R. H. Dennard, “Impact of elec- models, MOSFET device and integrated circuit design,
tron beam technology on silicon device fabrica- and FET memory cells and organizations. Since 1971
tion,” Semicond. Silicon (Electrochem. Soc. Pub- he has been manager of a group which is exploring
lication), H. R. Huff and R. R. Burgess, eds., pp. high density digital integrated circuits using advanced
830-841, 1973. technology concepts such as electron beam pattern
[9] D. L. Critchlow, R. H. Dennard, and S. E. Schus- exposure.
ter, “Design characteristics of n-channel insulat-
ed-gate field-effect transistors,” IBM J. Res. Fritz H. Gaensslen was born in
Develop., vol. 17, p. 430, 1973. Tuebingen, Germany, on October
[10] R. M. Swanson and J. D. Meindl, “Ion-implanted 4, 1931. He received the DipI. Ing.
complementary MOS transistors in low-voltage and Dr. Ing. degrees in electrical
circuits,” IEEE J. Solid-State Circuits, vol. SC-7, engineering from the Technical
pp. 146-153, April 1972. University of Munich, Munich,
[11] V. L. Rideout, F. H. Gaensslen, and A. LeBlanc, Germany, in 1959 and 1966,
“Device design considerations for ion implanted respectively.
n-channel MOSFET’s,” IBM J. Res. Develop., to Prior to 1966 he served as Assistant Professor in the
be published. Department of Electrical Engineering, Technical Uni-
[12] F. F. Fang and A. B. Fowler, “Transport proper- versity of Munich, Munich, Germany. During this peri-
ties of electrons in inverted Si surfaces,” Phys. od he was working on the synthesis of linear and dig-
Rev. vol. 169, p. 619, 1968. ital networks. In 1966 he joined the IBM T. J. Watson
[13] W. S. Johnson, IBM System Products Division, E. Research Center, Yorktown Heights, N.Y., where he is
Fishkill, N. Y., private communication. currently a member of a semiconductor device and
[14] H. S. Lee, “An analysis of the threshold voltage process design group. His current technical interests
for short channel IGFET’s,” Solid-State Electron., involve various aspects of advanced integrated cir-
vol. 16, p. 1407, 1973. cuits like miniaturization, device simulation, and ion
[15] D. P. Kennedy and P. C. Murley, “Steady state implantation. From September 1973 he was on a one
mathematical theory for the insulated gate field year assignment at the IBM Laboratory, Boeblingen,
effect transistor,” IBM J. Res. Develop., vol. 17, p. Germany.
1, 1973. Dr. Gaensslen is a member of the Nachrichtentech-
[16] M. S. Mock, “A two-dimensional mathematical nische Gesellschaft.
model of the insulated-gate field-effect transis-
tor,” Solid-State Electron., vol.16, p. 601, 1973. Hwa-Nien Yu (M’65) was born in
[17] W. Chang and P. Hwang, IBM System Products Shanghai, China, on January 17,
Division, Essex Junction, Vt., private communi- 1929. He received the B.S., MS., and
cation. Ph.D. degrees in electrical engi-
[18] R. R. Troutman, “Subthreshold design considera- neering from the University of Illi-
tions for insulated gate field-effect transistors,” nois, Urbana, in 1953, 1954, and
IEEE J. Solid-State Circuits, vol. SC-9, p.55, April 1958, respectively. While at the Uni-
1974. versity, he was a Research Assistant
in the Digital Computer Laboratory and worked on
Robert H. Dennard (M’65) was the design of the Illiac-II computer. Since joining the
born in Terrell, Texas, in 1932. He IBM Research Laboratory in 1957, he has been
received the B.S. and M.S. degrees engaged in various exploratory solid-state device
in electrical engineering from research activities. After working with the Advanced
Southern Methodist University, Dal- Systems Development Division from 1959 to 1962,
las, Tex., in 1954 and 1956, respec- he rejoined the Research Division in 1962 to work
tively, and the Ph.D. degree from on the ultra-high speed germanium device technol-
Carnegie Institute of Technology, ogy. Since 1967, he has been engaged in advanced
Pittsburgh, Pa., in 1958. silicon LSI device technology research. He is cur-
In 1958 he joined the IBM Research Division where rently the Manager of Semiconductor Technology at
his experience included study of new devices and cir- the IBM T. J. Watson Research Center, Yorktown
cuits for logic and memory applications, and devel- Heights, N.Y.
opment of advanced data communication techniques. Dr. Yu is a member of Sigma Xi.
Since 1963 he has been at the IBM T. J. Watson
Research Center, Yorktown Heights, N.Y., where he V. Leo Rideout (S’61—M’65) was born in N.J. in 1941.
worked with a group exploring large-scale integration He received the BS.E.E. degree with honors in 1963
(LSI), while making contributions in cost and yield from the University of Wisconsin, Madison, the
TECHNICAL ARTICLES
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MARCO receives a non-exclu-
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assurance that any critical back-
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papers for the JSSC should be the full-length versions of papers first
reasonable royalty. Giving more presented at the ISSCC. However, this aspect took time. Many of the
authority to the Provost’s office conference speakers at the ISSCC were not accustomed to publishing
to negotiate IP agreements in refereed scholarly publications. After the vigorous refereeing and
should help the current situa- selection process for paper presentation at the ISSCC, it was neces-
tion. To be competitive global- sary to work rather carefully with prospective authors to encourage
ly, US companies now need them for further effort to achieve the results for adequate publication
university research results and in a major journal of the IEEE.
the best interests of the country Dr. Meindl, as the first Editor made significant contributions, not
are served when this happens. only in working with the authors to publish their good contributions
in spite of the press of their dealing on a daily basis with the explod-
Q. What are the new hot areas that ing technology of solid-state circuits and devices. In addition he set
for the next decade? the tone for the Journal of Solid-State Circuits. In short order he was
A. Electronics and more specifically able to achieve a high standard of quality and was able to establish
ICs have been the principal driver a pattern of publishing major ISSCC presentations as regular title
of the most important economic papers…
event of the past half century, the From “The Origin of the Journal, the Council and the Conference
information revolution. My view of of Solid-State Circuits” by Donald O. Pederson, JSSC, April 1984
the critical reason for the unprece-
dented impact of the IC is that it a marvelous consequence of a ment at the U.S. Army Electronics
represents a fusion of the top- “fusion of the top-down and bot- Laboratory in Fort Monmouth, New
down and bottom-up approaches tom-up approaches to nanotech- Jersey. He then joined Stanford
to microelectronics that has now nololgy.” Top-down nanotechnolo- University in Palo Alto, California,
evolved to become nanoelectron- gy has been used to pattern and where he developed low-power
ics. Scaling is our common term for produce multibillion transistor chips integrated circuits and sensors for a
the top-down approach. The bot- with minimum feature sizes now portable electronic reading aid for
tom-up approach is epitomized by beyond 50 nm. Bottom-up nan- the blind, miniature wireless radio
the self-assembled single crystal sil- otechnology has been used to pro- telemetry systems for biomedical
icon ingot from which (now duce self-assembled single crystal research, and non-invasive ultra-
300mm) silicon wafers are sliced, ingots of silicon that are sliced to sonic imaging and blood-flow
each yielding several hundred provide 300 mm diameter wafers for measurement systems. Dr. Meindl
chips each now containing several microchip manufacturing. One was the founding director of the
billion transistors. broad prospective is that to advance Integrated Circuits Laboratory and
beyond the ultimate limits of CMOS a founding co-director of the Cen-
Of course Moore’s Law will integrated electronics will require an ter for Integrated Systems at Stan-
cease, perhaps in a 10-20 year time- elegant fusion of top-down and bot- ford. The latter was a model for
frame. But my crystal ball suggests tom-up nanotechnology enabled by university and industry cooperative
IC manufacturing will be important future discoveries and inventions in research in microelectronics.
for more than double that number both physical and biological science From 1986 to 1993, Dr. Meindl
of years. The “vacuum tube-to-tran- and engineering as profound as the was senior vice president for aca-
sistor like” breakthrough that is mid-20th century inventions of the demic affairs and provost of Rens-
needed to replace ICs will require a transistor and the integrated circuit. selaer Polytechnic Institute in Troy,
much more elegant and still Carbon nanotube and graphene New York. In this role he was
unknown fusion of top-down nan- nanoribbon technologies represent responsible for all teaching and
otechnology in the sub-10nm range primitive examples of efforts to research.
with self-assembled bottom-up nan- achieve such a fusion. He joined Georgia Tech in 1993
otechnology probably rooted in as director of its Microelectronic
biochemical science. About James Meindl Research Center. In 1998, he
Meindl accepted his award with Early in his career, Dr. Meindl became the founding director of
these comments about technology. developed micropower integrated the Interconnect Focus Center,
Early 21st century microchips are circuits for portable military equip- where he led a team of more than
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60 faculty members from MIT, solutions for solving interconnec- Garver Lamme Medal of the Amer-
Stanford, Rensselaer, SUNY tivity problems that arise from try- ican Association for Engineering
Albany, and Georgia Tech in a ing to interconnect billions of tran- Education, the J.J.Ebers Award of
partnership with industry and gov- sistors within a tiny chip. the IEEE Electron Devices Society,
ernment. His research at Georgia An IEEE Life Fellow, Dr. Meindl the IEEE Education Medal and the
Tech includes exploring different is the recipient of the Benjamin IEEE Solid State Circuits Award.
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tronics and combining internation- that you never walk alone but that was teaching.”
al contract research by top players great things only happen when Claeys notes, “He initiated the
in the field with doctoral level you stimulate the best people to so-called ‘student projects’ where-
research, teaching and publica- join forces and have fun in doing by a group of 3 or 4 students had
tions. According to Cor Claeys, a so. For that reason receiving the to work during the year on a ded-
current Research Head at IMEC, it Don Pederson award is so dear to icated project. In the 70s it was a
was formed from a small research me as I owe a lot to him, as does new teaching concept which later
group of about 20 people at the everyone who had the privilege to became common practice.”
University of Leuven. By the work with him. Gielen recalls that De Man intro-
beginning of this decade IMEC had Another factor of luck is that I duced many “design projects in
became the largest such group in belong to a generation that could our EE curriculum, where students
Europe with 125 professional participate in the 60-year evolution could gain hands-on experiences
researchers. Dave Hodges who from the single transistor circuit to with the course material. This
knew and worked with him during the billion-transistor chip. Perhaps includes also many projects with
De Man’s time as a post-doc at one of the most fascinating periods applying CAD software to VLSI
U.C. Berkeley, 1970-71, says that in engineering history, although design.”
De Man and others “built IMEC you never know.” Claeys can still remember how
into the pre-eminent microelec- an exam question of De Man’s 35
tronics research center in Europe. Inspired Educator years ago required undergraduates
It was always clear that he is a man De Man’s lectures were by far the to examine the whole picture
with many talents. He and his stu- most inspiring of Rabaey’s under- before designing a circuit solution.
dents have contributed much to graduate career. “In fact, they “I want to build a radio for my car
the progress of microelectronics.” inspired me so much that I ulti- and I have to drive through the
De Man explains, “IMEC helped mately changed my personal direc- Sahara, What type of technology
in creating a great mixed industry- tion from control systems to inte- should I use? You first had to ana-
university team to build a success- grated circuits,” Rabaey said. Gie- lyze the question: the desert
ful research program on DSP sili- len also feels that De Man’s inspir- means a hot temperature, technol-
con compilation, the results of ing lectures and presentations are ogy must reliable, before an
which are still in use today. And his most memorable trait. Claeys answer could be given.”
most of the team members have points out that even now as an Claeys pointed out that De Man
either created their own spin-off emeritus professor, “his presenta- was available for the students
companies, are captains of indus- tions are not at all a review of the when needed. “The assistants
try or top level academics. So the history but more a look into the working for him and supervising
greatest challenge became also the future. He is exploring new fields laboratories also had to treat the
greatest fun as there is no satisfac- and tries to understand the physics students as a very valuable asset.”
tion without overcoming some involved, their challenges and Claeys sums it up, “All his life he
challenge first.” potentials their may bring in the remained an enthusiastic professor
Willy Sansen, Head of ESAT- future.” who considered teaching as a very
MICAS at K.U. Leuven, reports that Raebey recalls De Man was important job; I would more say a
De Man’s “task has been to look known to be a fair but hard-driving mission in his life. Working togeth-
around and provide advice to the advisor. His undergraduate lab er with students was an extremely
policymakers of IMEC. He does mates made a movie for a Christ- important issue for him.”
this exceedingly well!” mas party of De Man’s students “It is ironic, though, that De
slaving on the terminals in the Man, despite being an inspired
De Man Looks Back computer room, spewing tons of educator, never wrote a textbook
“I was extremely lucky to meet computer paper from the printer, himself about digital design. Some
two extra-ordinary visionary men- all this playing against the music of of his former students, like Jan
tors who both became friends for Ike and Tina Turner’s “Proud Rabaey, have done so instead,”
life: Roger Van Overstraeten and Mary” with the lyrics “Working for notes Gielen.
Don Pederson. The first opened De Man every night and day.” De Man comments that a most
the world of physics and technolo- Gielen recalls, “the large size of satisfying part of his career has
gy for me, the second introduced the reading material for his cours- been seeing his Master and Ph.D.
me to the passion of circuit and es. Hugo was infamous for that. students contribute to progress in
system design and so many other He could motivate his students to the field worldwide, both in the
good things in life. work themselves through the big academic world and in industry.
Common to both was the vision piles of difficult material that he “For me, teaching is the most
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rewarding profession as it provides
you with the opportunity to multi- Biography of Hugo De Man
ply and transfer your knowledge Hugo De Man was born on September 19, 1940 in Boom, Belgium.
and to help people to stimulate He received the Electrical Engineering and Ph.D. degrees from the
their own great creative talent and Katholieke Universiteit Leuven (K.U. Leuven), Belgium, in 1964 and
make it available to create a better 1968, respectively.
society. I am extremely grateful to In 1968 he joined the K.U. Leuven, working on device physics and
all of my students for this greatest IC design. From 1969 to 1971 he was a postdoc at U.C. Berkeley, in
of all presents!” the CAD group of Prof. D.O. Pederson. In 1971 he returned to the
K.U. Leuven, where he became full professor in 1974.
Seeing Clearly And In 1975 he was a Visiting Associate Professor at U.C. Berkeley. He
Conveying It was an Associate Editor for the IEEE Journal of Solid-State Circuits
One of DeMan’s principles is that from 1975-1980 and Associate Editor for the IEEE Transactions on
“if you cannot explain something CAD from 1982 to 1985.
in simple words you don't know Prof. De Man has been advisor of 60 Ph.D. students. He has con-
about what you are speaking. tributed to over 500 scientific publications and was keynote speaker
Somebody can give high level at the ESSCIRC, DAC, DATE and ISSCC conferences. He was program
technical presentations but often chair of ESSCIRC and DATE conferences.
forget about basic things and con- He is co-founder of the Interuniversity Micro-Electronics Center
cepts,” Claeys recalls. (IMEC) where, from 1984 to 1995, he was Vice-President of research
Claeys continues by noting that on design methodologies for Integrated Telecom Systems. This group
De Man would comment “many sci- created the CATHEDRAL suite of silicon compilation tools DSP chips
entists are too much focused on and the COWARE hardware-software co design systems. This work
their own narrow research field and and the co-design of numerous telecom and multimedia chips have
the direct problems associated with resulted in 6 Spin-Off companies.
them. Executing projects and attract- In 1995 he became a Senior Fellow of IMEC working on system
ing new projects are key for them. design technologies. His interests continue in Technology Aware
However, people should have a Design methods and education methods for SoC design.
broad view and interest in order to Prof. De Man received best paper awards at ISSCC, ESSCIRC, ICCD
put their own activities in the right and DAC and the 1985 Darlington Award of IEEE Circuits and Systems
context and take sufficient time to Society. In 1999 he received the Technical Achievement Award of the
think about future trends and chal- IEEE Signal Processing Society, The Phil Kaufman Award of the EDA
lenges. He is a great scientist with Consortium and the Golden Jubilee Medal of IEEE CAS. In 2004 he
an excellent scientific track record received the lifetime achievement awards of the European Design and
but he also has a very good vision.” Automation Association (EDAA) as well as the European Electronics
Rabaey agrees, “De Man is a real Industry. Since 2005 he has been Emeritus of the K.U. Leuven and is
deep thinker - always listening and still active as Senior Fellow of IMEC.
observing and from this distilling Prof. De Man is a Fellow of IEEE and a member of the Royal Acad-
new visions. He also never emy of Sciences, Belgium.
stopped learning. As such, he has
impacted the directions of many
people and companies.” always mature enough for imme- Sansen applauds De Man
Georges Gielen continues, “De diate wide adoption in industrial receiving the Pederson award as
Man is essentially a visionary practice.” “he has surely been one of the
philosopher, who continuously Sansen always remembers De most ardent followers of Peder-
looks ahead into the future Man’s laid-back kind of style, always son. He has been convinced all
(future applications and societal providing a very broad view on along that CAD software is essen-
needs, state of the technology, things. De Man has “a very broad tial to advance the design chips of
etc.) and then tries to derive view on where microelectronics is high complexity. He has been in
from that the research activities heading to; he continuously tries to the forefront to illustrate this. And
that need to be started today. extrapolate how technologies and he has been very successful in
The drawback of being a vision- system design can be teamed up putting out design software such
ary though is that some of these towards higher complexity. Hugo that it could be used by design-
tools were maybe commercial- deserves this prize as he has been ers; his ‘meet-in-the middle’
ized a bit too early in time, in the one of the longest followers of Don approach for system design has
sense that the market was not Pederson,” observes Sansen. been exemplary.”
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Recipients of the IEEE Solid-State Circuit 1993 Kiyoo Itoh
Awards 1992 Barrie Gilbert
1991 Frank Wanlass
IEEE Donald O. Pederson Technical Field Award 1990 Toshi Masuhara
in Solid-State Circuits 1989 James D. Meindl
2006 Mark A. Horowitz
Solid-State Circuits Council Development Award
IEEE Solid-State Circuits Technical Field Award 1988 Karl Stein
2005 Bruce A. Wooley 1987 Robert Widlar
2004 Eric Vittoz 1986 Barrie Gilbert
2003 Daniel Dobberpuhl 1985 Donald O. Pederson
2002 Chenming Hu and Ping Ko
2001 No Award The IEEE Solid-State Circuits Tech-
2000 Robert H. Krambreck and Stephen Law nical Field Award was created in
1999 Kensall D. Wise 1989 and was renamed the IEEE
1998 Nicky Lu Donald O. Pederson Technical
1997 Robert W. Brodersen Field Award in 2006. The awards
1996 Rudy J. van de Plassche before 1989 were Solid-State Cir-
1995 Lewis M. Terman cuits Council Award in Solid-State
1994 Paul R. Gray IEEE Pederson Circuits.
Award Medal
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cult to get the idea of mixed signal input?’ That student had re-invent-
MOS ICs accepted. “When Yannis ed oscillators right on the spot.”
began his graduate work around In order to reach undergradu-
1970,” said Dr. Paul Gray, an early ates, a professor “must be willing
collaborator who is now Professor to find ways to explain things intu-
Emeritus and Professor in the itively to the students – not just
Graduate School, EECS, UC Berke- throw a bunch of equations at
ley, in an email statement, “bipolar them,” Tsividis said. “The key is to
was used for virtually all analog make the math interesting, by
integrated circuits and most digital making clear why it’s useful.
circuits, which were at low inte- Dumping the first circuits class on
gration levels at the time. MOS was Kirchhoff Medal anybody in an EE department has
used for memory and was just often had disastrous results in the
beginning to be used for some Subsequent milestones, Tsividis motivation of students – I’m sure
complex logic circuits.” CMOS was said, have been “the work my stu- our field has lost some of the best
in its infancy. “It was not easy to dents and I did on switched-capac- minds because of this,” he said.
see that MOS technology would itor circuit analysis and simulation;
bring about the need to integrate our techniques for automatically Interdependence of
both analog and digital on the tuned integrated continuous-time Research and Teaching
same chip. This backdrop made filters; and our work related to pre- “Whenever I want to really under-
MOS analog circuits a somewhat cision MOS modeling for analog stand an area different from mine,
speculative proposition.” and mixed-signal design.” I ask to teach a class in it,” Tsividis
Dr. Tsividis, who is an IEEE Fel- said. “This is how I learned about
Career Breakthrough Was low, has received two best paper DSPs, communications, signals and
The First Useful MOS awards from the IEEE Circuits and systems, and semiconductor
Operational Amplifier Systems Society, as well as the devices. Only when I am forced to
“Working with Paul Gray, Yannis IEEE-wide Baker best paper explain something carefully to oth-
P. Tsividis developed and demon- award. ers, do I understand it fully.” As for
strated the world’s first useful MOS his graduate students, he aims
operational amplifier,” said Dave Master Teacher especially “to strike the right bal-
Hodges, Professor of Engineering, The recipient in 2005 of the IEEE ance between helping them and
EECS, UC Berkeley, via email. “It Undergraduate Teaching Award, challenging them to come up with
was fundamental to the develop- Dr. Tsividis is unusual among their own solutions.”
ment of mixed signal MOS inte- prominent researchers for his Shanthi Pavan, a recent Tsividis
grated circuits, which provide vast- enthusiasm about teaching at this Ph.D., who is now an assistant
ly higher levels of circuit integra- level. “I find it extremely reward- professor at the Indian Institute of
tion than bipolar analog devices,” ing,” he said. “I have created a Technology in Madras, India, said
the prior mainstream technology. first-year undergraduate class, in an email that he remembers
Before CMOS was fully devel- ‘Introduction to Electrical Engi- especially Prof. Tsividis’s “infec-
oped, the implementation of high neering,’ where we mix circuits tious enthusiasm,” “clarity,” “metic-
gain op amps in NMOS was a real and electronics and attempt to ulous feedback,” and “virtually lim-
challenge, Hodges said. “Yannis make students tinker. The idea is itless patience.” Dr. Cowan would
came up with some circuit ideas to to make them excited and motivat- concur. “I don’t think people can
overcome this” using NMOS-only ed about what they will be learn- decide to become great teachers,”
technology. Yannis’s most lasting ing in their follow-up classes. Just he said. ”It has to come from the
contribution to the usefulness of to show you how rewarding heart.”
CMOS was his work on the adap- undergraduate teaching can be, let
tation of weighted-capacitor A/D me tell you a story from that class. Yannis Tsividis received the Bach-
conversion techniques to a special The class has a heavy lab compo- elor’s degree in electrical engi-
kind of converter used for voice, nent. During an experiment on neering from the University of
called a companding coder. He amplifiers, a student comes to me Minnesota in Minneapolis in 1972,
and others first demonstrated this and says, ‘I see how, if I put a sig- and the MS and Ph.D. degrees,
technique, which became very nal in, I get a signal out, and if I do also in electrical engineering, from
widely used in telephone systems not put a signal in, I get nothing the University of California at
around the world in the 1980’s and out. What would happen if I took Berkeley in 1973 and 1976. He is
1990’s.” the output signal and used it as the Charles Batchelor Memorial Pro-
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fessor of Electrical Engineering at These include techniques for fully log/RF MOS circuits, and analog-
Columbia University in New York, integrated analog filters, which inspired digital signal processing
and has taught at the University of have been used in very large vol- techniques, including continuous-
California, Berkeley, MIT, and the ume products such as disc drives time digital filters which operate
National Technical University of and consumer electronics; without aliasing, and digital filters
Athens. switched-capacitor circuit theory which use internal companding.
Dr. Tsividis began his career by and simulation, with the resulting A Fellow of the IEEE, Dr. Tsividis
demonstrating the feasibility of software program Switcap widely is the recipient of the 1984 IEEE
MOS mixed-signal circuits. In 1976, used for such systems in the early W.R.G. Baker Best Paper Award,
at a time that MOS was considered days of MOS telecom ICs; com- the 1986 European Solid-State Cir-
a digital integrated circuit technolo- panding analog filters; discrete- cuits Conference Best Paper Award,
gy, he designed and built a fully time parametric circuits; mixed the 1998 IEEE Circuits and Systems
integrated MOS operational ampli- analog-digital VLSI computation; Society Guillemin-Cauer Best Paper
fier and demonstrated its use in a and precision MOS device model- Award, and the 2005 IEEE Under-
PCM codec. These results were ing, with benchmarks incorporated graduate Teaching Award, and co-
widely adopted by the industry in into IEEE standards for judging recipient of the 1987 IEEE Circuits
the first massively produced mixed- compact models. His book, “Oper- and Systems Society Darlington
signal MOS ICs. Together with his ation and Modeling of the MOS Best Paper Award and the 2003
students, he has since made many Transistor” is a standard reference IEEE International Solid-State Cir-
other contributions at the device, in the field. His most recent cuits Conference L. Winner Out-
circuit, system and simulation level. research effort involves 0.5 V ana- standing Paper Award.
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about the time he left OSU for Ari- needed to incorporate the Platform ence that addresses what seemed
zona. Fiez came on campus, took for Learning into their undergradu- to be missing in our own educa-
the course and grew the TekBot ate curriculum. So, she presented tional experiences.”
program, “got it done and made it the idea to Tektronix, Inc., and Nowadays, Hellums reports
successful. Then she enlarged the garnered critical support by adopt- going to other schools and encour-
scope to the Platforms for Learning, ing the ‘TekBots’ moniker for the aging them to pick up the Plat-
which is all hers. It’s her vision and program. On the surface, such a forms for Learning program. “I try
excitement that gets it developed.“ move might appear to be hype. to sell her idea.” The TekBots Plat-
Allstot recalls, “I'm guessing here, However, it is far more significant form for Learning has been imple-
but I don't think she got interested than that. Previous to Terri's mented in eight engineering cours-
in robots until she became Head of arrival, the Freshman Robot es at OSU at the freshman through
ECE at OSU. There was a freshman sequence culminated in a so-called senior levels and is used by five
robot course sequence that had other institutions.
been put in place at OSU one The concept includes two
year prior to her arrival. It was “She had a good idea and she critical elements that aim to
based on the freshman robot
course that CMU ECE had
found a way to describe it in keep freshman and sopho-
mores involved and staying in
developed a few years earlier, very simple, but powerful an EE program, Hellums
but had some innovative addi- reports. “It deals with the
tions including enrolling some
terms, that everyone could challenges of the major being
students from the local high understand.” too hard or too boring and
schools. But, it was just a start. gets over that sophomore
The next step in the thinking,
Dave Allstot hump,” said Hellums. First
as I understand it, was to deter- robot implementations often
mine a way for those courses end up looking like the OSU
to impact the entire undergraduate ‘Robot Rodeo’ that was open to the mascot – a Beaver with whiskers
curriculum. One idea was to general public, especially prospec- that sense objects and back up
involve seniors in capstone projects tive students and their families. move around them. By working
that improved the robots and alter- That term was almost pejorative, in with applications of theory, sens-
natives to them for the freshman my opinion, because it conjured ing, seeing, reacting and moving,
sequence would be developed, as up the old ‘cow college’ image that the students realize what engineers
well. Of course, this left the uncom- Oregon State had in the early days do in their career and see it can be
fortable two-year robot-free gap when it was Oregon Agricultural fun. They also work in teams. Hel-
between the Freshman and Senior College. It certainly didn't suggest lums recalls that there was nothing
years. This is the kind of situation leading-edge high-technology edu- done in teams when he was a stu-
where Terri shines. She conceived cation and research. With the sim- dent but industry always works in
the “Platform for Learning” idea so ple twist of a phrase, TekBots, teams, often fairly large teams. So
that the first-year robot experience Terri conveyed the message that it the students learn early on to find
was continued throughout the was really leading-edge robot their place in a team.
undergraduate years, and centered learning that had critical support Kartikeya Mayaram, professor at
around a central theme that moti- from the local high-tech industry,” Oregon State University, and a
vated upper level classes. This recalls Allstot. long time research collaborator
meant adding capabilities to the Fiez emphasized that “this with Fiez, sees definite differences
Freshman robots such as wireless award really recognizes an amaz- in the graduate students who have
communications and control, etc. ing team. Over the last six years, come from the Learning Platforms
As is typical of Terri, she had a we have had a core team of Don curriculum. “They are ready to hit
good idea and she found a way to Heer (Education coordinator), the ground running. They are
describe it in very simple, but pow- Roger Traylor (senior instructor), already very good at trouble shoot-
erful terms that everyone could Gale Sumida (Research and Edu- ing. They have skills that enable
understand. This is really important cation Support), Tom Thompson them to do independent research
for encouraging younger kids to get (Math and Science education PhD and basically they are more
involved in Electrical Engineering.” student and Philomath High resourceful in terms of knowing
“This also presented an oppor- School teacher). Together, it has where to go and how to find infor-
tunity for Terri to shine in another been a thrill working with the fac- mation. That’s a very valuable set
way. To be successful, she knew ulty and students in our depart- of skills to come with to graduate
that significant resources would be ment to create a unique experi- school.”
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Allstot points out that as a
researcher “Terri has made signifi-
cant research contributions to
oversampled data converters and
substrate noise analysis tech-
niques. She has made tremendous
T erri S. Fiez (’82, M’85, SM’95, F’05)
received the B.S. and M.S. degrees in
electrical engineering from the Uni-
versity of Idaho, Moscow, in 1984 and 1985
respectively. In 1990 she received the Ph.D.
contributions to the high-technol- degree in electrical and computer engineer-
ogy industry by advising many ing from Oregon State University, Corvallis.
students who are prepared to ‘hit From 1985 to 1988 she worked at Hewlett-
the ground running’ in their jobs. Packard Corporation, in Boise and Corvallis.
She’s made important educational She was on the faculty at Washington State
innovations, and her impact at University from 1990 to 1999. In 1999, she
Oregon State cannot be overstat- Dr. Terri S. Fiez joined the Department of Electrical and
ed. She has done a lot at many dif- Computer Engineering at OSU as Professor
ferent levels.” and Department Head. She became Director of the School of Elec-
Mayaram outlines how Fiez’s trical Engineering and Computer Science in 2003.
program has permeated much of Dr. Fiez has participated extensively in IEEE activities including:
the EE Curriculum. “Fiez is very IEEE International Solid-State Circuits Conference (2000-2006),
involved with the Platforms for IEEE Custom Integrated Circuits Conference (1994-1998), IEEE
Learning and works with a core Transactions on Circuits and Systems II Associate Editor (1995-
team examining the curriculum. 1997), IEEE Journal of Solid-State Circuits Guest Editor (1997-1998)
They look for critical points that and IEEE CAS Distinguished Lecturer (2002-2004). Fiez received
the curriculum would benefit the National Science Foundation Young Investigator Award and
from the platforms methodology, the IEEE Solid-State Circuit Predoctoral Fellowship. She was elect-
and develop a straw man propos- ed Fellow of the IEEE in 2005 “for contributions to analog and
al. So the core team does a lot of mixed-signal integrated circuits.”
the ground work before they
actually go and talk with the fac-
ulty. Then it’s an interactive her students she’s a great person her family and professional inter-
process at that point. Professor and her students love her. She ests, more so than me and most of
Roger Traylor who teaches the keeps in touch with most of her our colleagues.”
freshman introductory course, is graduate students long after they Allstot asked Fiez, “Why do you
already very involved in the Tek- have graduated and been work- obviously enjoy it so much?” Fiez
Bot program. They have a good ing for ages. She advises them replied, “I can't think of a more
idea of what’s going on in a class even at later stages in their satisfying career. The opportunities
and they make a proposal for career,” Mayram notes. for creativity, working with stu-
what makes sense in particular Allstot says, “Terri has it all. She dents to find their way, new tech-
labs. When the team has thought is technically talented with a rare nologies that will change the
it out that well, it’s a lot easier for gift for leadership. Mark down this world, learning and laughing. I
the faculty to jump on board. The prediction: She will be a university have been very lucky all through-
team takes on a lot of the detail president in the future. She is that out my career to work with won-
work which can be a stumbling rare star who is approachable and derful people who are passionate
block if each faculty member is likable by all, mainly, I think, about what they do. These include
left on their own.” because it is always clear being my graduate advisors, Gary Maki
“Terri is natural leader. She is around her that she really loves and Dave Allstot, and my graduate
creative, full of new and innova- what she does. She has a great students, undergraduates, the fac-
tive ideas. She is down to earth, sense of humor that she uses effec- ulty and staff in my School and
values people and that makes a tively in her presentations and in Ron Adams, OSU Engineering
very nice work environment. In person. Most important, she has a Dean. I can't think of a day not
terms of research and mentoring life. She is well balanced between filled with laughter!”
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Dennis Fischette is
a Senior Member of
the Technical Staff at
Advanced Micro
Devices (AMD) in
Sunnyvale, CA. In
1986 he graduated
from Cornell University, Ithaca,
NY, with B.S. degree in Engineer- At Fudan University, Shanghai (from left): Professors Anquan Jiang, Huihua
ing Physics and then studied the Yu, Yinyin Lin, and Ting-AoTang, with Vojin Oklobdzija, C.K. Ken Yang, Tom
History of Science at the Universi- Lee, Betty Prince, and Prof. Zhiliang Hong.
PEOPLE
ty of California, Berkeley. From circuits. He has served on a corpo- niques, and the Guest Editorial
1988 to 1991 he worked for Inte- rate Board of Directors, on several Board of Transactions of Institute
grated CMOS Systems Sunnyvale corporate Technical Advisory of Electronics, Information and
on device and circuit modeling. Boards, as the Editor-in-Chief of Communication Engineers of
From 1991 to 1996 he worked for the IEEE Transactions on Circuits Japan (IEICE).
Hal Computer Systems, Campbell, and Systems II: Analog and Digital Dr. Hajimiri was selected to the
CA on clock synthesizers and cir- Signal Processing, as a member of top 100 innovators (TR100) list and
cuit design automation. the IEEE Solid-State Circuits Soci- is a Fellow of Okawa Foundation.
Before joining AMD, he worked ety Administrative Committee, as a He is the recipient of Caltech's
for Chromatic Research, Sunnyvale member of the IEEE Circuits and Graduate Students Council Teach-
on clock synthesizers, D/A circuits, Systems Society Board of Gover- ing and Mentoring award as well as
and memories. His technical inter- nors, and as a member of the IEEE Associated Students of Caltech
ests include PLL and DLL design, International Solid-State Circuits Undergraduate Excellence in
clock-and-data recovery, circuit Conference Technical Program Teaching Award. He was the Gold
analysis software, and high-speed Committee. medal winner of the National
IO circuits. He was a member of Physics Competition and the
the ISSCC Digital Program Commit- Ali Hajimiri received Bronze Medal winner of the 21st
tee from 2001-2006 and created an the B.S. degree in International Physics Olympiad,
online course on PLL Design for Electronics Engi- Groningen, Netherlands. He was a
the IEEE Expert Now program in neering from the co-recipient of the IEEE JSSC Best
2005. In his spare time, Dennis is Sharif University of Paper Award of 2004, the Interna-
an active jazz musician who Technology, and the tional Solid-State Circuits Confer-
recently performed in China and M.S. and Ph.D. ence (ISSCC) Jack Kilby Outstand-
Vietnam. degrees in electrical engineering ing Paper Award, two times co-
from the Stanford University in recipient of CICC's best paper
Ian Galton received 1996 and 1998, respectively. awards, and a three times winner of
the Sc.B. degree He has had appointments with the IBM faculty partnership award
from Brown Univer- Philips Semiconductors, Sun as well as National Science Founda-
sity in 1984, and the Microsystems, and Lucent Tech- tion CAREER award. He is a
M.S. and Ph.D. nologies (Bell Labs) in the past. In cofounder of Axiom Microdevices
degrees from the 1998, he joined the Faculty of the Inc. and member of SSCS AdCom.
California Institute California Institute of Technology,
of Technology in 1989 and 1992, Pasadena, where he is a Professor Tadahiro Kuroda
respectively, all in electrical engi- of Electrical Engineering and the (M’88-SM’00-F’06)
neering. Since 1996 he has been a director of Microelectronics Labora- received the Ph.D.
professor of electrical engineering tory. His research interests are high- degree in electrical
at the University of California, San speed and RF integrated circuits. engineering from the
Diego where he teaches and con- Dr. Hajimiri is the author of The University of Tokyo,
ducts research in the field of Design of Low Noise Oscillators Tokyo, Japan, in 1999.
mixed-signal integrated circuits (Boston, MA: Kluwer, 1999) and In 1982, he joined Toshiba Cor-
and systems for communications. holds several U.S. and European poration, where he designed
Prior to 1996 he was with UC patents. He is a member of the CMOS SRAMs, gate arrays and
Irvine, and prior to 1989 he was Technical Program Committee of standard cells. From 1988 to 1990,
with Acuson and Mead Data Cen- the International Solid-State Cir- he was a Visiting Scholar with the
tral. His research involves the cuits Conference (ISSCC). He has University of California, Berkeley,
invention, analysis, and integrated also served as an Associate Editor where he conducted research in
circuit implementation of critical of the IEEE Journal of Solid-State the field of VLSI CAD. In 1990, he
communication system blocks Circuits (JSSC), an Associate Editor was back to Toshiba, and engaged
such as data converters, frequency of IEEE Transactions on Circuits in the research and development
synthesizers, and clock recovery and Systems (TCAS): Part-II, a of BiCMOS ASICs, ECL gate arrays,
systems. In addition to his aca- member of the Technical Program high-speed CMOS LSIs for
demic research, he regularly con- Committees of the International telecommunications, and low-
sults at several semiconductor Conference on Computer Aided power CMOS LSIs for multimedia
companies and teaches industry- Design (ICCAD), Guest Editor of and mobile applications. He
oriented short courses on the the IEEE Transactions on invented a Variable Threshold-volt-
design of mixed-signal integrated Microwave Theory and Tech- age CMOS (VTCMOS) technology
PEOPLE
to control VTH through substrate ary 2002, where his current tion (Center) in 1993, General Man-
bias, and applied it to a DCT core research interests include: low- ager, Semiconductor Manufacturing
processor and a gate-array in 1995. power transceiver circuitry for Technology Center, Semiconductor
He also developed a Variable Sup- highly-integrated radios and elec- & IC Div. in 1997, and then became
ply-voltage scheme using an tronics design for high-speed data Senior Chief Engineer, Semiconduc-
embedded DC-DC converter, and communications. Professor Long tor Group, Hitachi. In 2001, he
employed it to a microprocessor currently serves on the program assumed his current position, Exec-
core and an MPEG-4 chip for the committees of the ISSCC, ESSCIRC, utive Director, MIRAI Project, Asso-
first time in the world in 1997. In IEEE-BCTM and GAAS 2004, and is ciation of Super-Advanced Electron-
2000, he moved to Keio University, a past Associate Editor of the IEEE ics Technologies (ASET).He is a
Yokohama, Japan, where he has Journal of Solid-State Circuits. member of IEEE and IEICE, Japan.
been a professor since 2002. He He became a fellow of IEEE in 1994
has been a Visiting Professor at Toshiaki Masuhara with the citation, ”For contribution
Hiroshima University, Japan, and (S768-M’69-SM’90- in the invention and the develop-
the University of California, Berke- Fellow’94), Associa- ment of NMOS circuits and high-
ley. His research interests include tion of Super- speed CMOS memories”. He was
low-power, high-speed CMOS Advanced Electron- the program co-chair and the chair
design for wireless and wireline ics Technologies in 1992-, 1993-, and general co-chair
communications, human computer (ASET), was born on and chair in 1996- and 1997-VLSI
interactions, and ubiquitous elec- Mar. 5, 1945 in Osaka, Japan. He Circuit Symposium. He was an
tronics. He has published more obtained B.S., M.S. and Ph.D. elected member of the Administra-
than 200 technical publications, degrees in Electrical Engineering tive Committee, SSCS from 1998 to
including 50 invited papers, and 18 from Kyoto University, Kyoto, Japan 2000.He received IEEE Solid-State
books/chapters, and has filed in 1967, 1969 and in 1977, respec- Circuit Technical Field Award on his
more than 100 patents. tively. From 1969 to 1974, he was a contribution to NMOS depletion-
Dr. Kuroda served as the Gener- member of the technical staff, 3rd load circuits and the development
al Chairman for the Symposium on and 7th Department at Hitachi Cen- of high speed CMOS memories in
VLSI Circuits, the Vice Chairman tral Research Laboratory(CRL), 1990 and the IEEE third Millennium
for ASP-DAC, sub-committee Kokubunji, Tokyo, Japan, where he Medal in 2000. He has received a
chairs for A-SSCC, ICCAD, and worked on depletion-load NMOS Significant Invention Award, Japan
SSDM, and program committee integrated circuits and on modeling in 1994, four Significant Invention
members for the Symposium on of sub-threshold characteristics of Awards, Tokyo, Japan in 1984, 1985,
VLSI Circuits, CICC, DAC, ASP- MOS transistors. From 1974 to 1975, 1988 and 1992, Significant Invention
DAC, ISLPED, SSDM, ISQED, and he was a special student, Depart- Awards, Yamanashi, Japan in 1995
other international conferences. ment of Electrical Engineering and and Gumma, Japan in 1996.
He is a recipient of the 2005 IEEE Computer Science, University of
System LSI Award, the 2005 P&I California, Berkeley where he Akira Matsuzawa
Patent of the Year Award, and the worked on double-diffused MOS received B.S., M.S.,
2006 LSI IP Design Award. He is an transistors and a new CMOS and ph. D. degrees in
IEEE Fellow and an IEEE SSCS Dis- process. In 1975, he returned to electronics engineer-
tinguished Lecturer. Hitachi CRL and worked on new ing from Tohoku
high speed CMOS SRAM. In 1987, University, Sendai,
John R. Long re- he became department manager, Japan, in 1976, 1978,
ceived the M.Eng. 7th Dept., Hitachi CRL, developing and 1997 respectively. In 1978, he
and Ph.D. degrees memories, microprocessors, digital joined Matsushita Electric Industrial
in Electronics from signal processors and high frequen- Co., Ltd. Since then, he has been
Carleton University, cy silicon devices. He then became working on research and develop-
Canada in 1992 and the manager of the 1st Dept. in ment of analog and Mixed Signal LSI
1996, respectively. 1990, performing research on high technologies; ultra-high speed
He worked for 10 years at Bell- speed GaAs and bipolar ICs and ADCs, RF CMOS circuits, and digital
Northern Research, Ottawa (now materials. From 1991 to 1993, he read-channel technologies for DVD
Nortel Networks) designing ASICs was in Telecommunications Divi- systems. From 1997 to 2003, he was
for Gbit/s fibre systems, and for 5 sion, Hitachi, where he was respon- a general manager in advanced LSI
years as a faculty member at the sible for the design of telecom technology development center. On
University of Toronto. He joined ICs.He became General Manager, April 2003, he joined Tokyo Institute
the faculty at the TU Delft in Janu- Technology Development Opera- of Technology and he is a professor
PEOPLE
on physical electronics. Currently he been a leading advocate to inno- products based upon MEMS tech-
is researching in mixed signal tech- vate and promote new memory nology, with an initial focus on the
nologies. He has published 30 tech- technologies in the industry and is very vibrating micromechanical
nical journal papers and 50 interna- working with many academic and resonators pioneered by his
tional conference papers. He is co- industry organisations to promote research in past years. He served
author of 9 books. He holds 34 reg- futuristic memory technologies. Mr. as Vice President and Acting Chief
istered Japan patents and 65 US and Natarajan obtained his Master’s Technology Officer (CTO) of Dis-
EPC patents. He received the IR100 degree in computer engineering cera from 2001 to mid-2002.
award in 1983, the R&D100 award from University of Southwestern, In mid-2002, Prof. Nguyen went on
and the Remarkable Invention Lafayette, LA. He is a IEEE Distin- leave from the University of Michigan
award in 1994, and the ISSCC guished Lecturer for 2007-2008 and to join the Microsystems Technology
evening panel award in 2003 and a Senior member for the Institute of Office (MTO) of DARPA in Arlington,
2005. He now serves SSCS AdCom Electrical and Electrical Engineers. Virginia, where he served as a Pro-
members and he is an IEEE Fellow gram Manager in MEMS technology.
since 2002. Clark T.-C. Nguyen At DARPA, from mid-2002 through
received the B.S., 2005, Prof. Nguyen created and man-
Sreedhar Natara- M.S., and Ph.D. aged a diverse set of programs that
jan is currently serv- degrees from the included Microelectromechanical Sys-
ing as the Founder University of Califor- tems (MEMS), Micro Power Genera-
& CEO of Emerging nia at Berkeley in tion (MPG), Chip-Scale Atomic Clock
Memory Technolo- 1989, 1991, and (CSAC), MEMS Exchange (MX), Harsh
gies (EMT) Inc. He 1994, respectively, all in Electrical Environment Robust Micromechani-
founded EMT in Engineering and Computer Sci- cal Technology (HERMIT), Micro Gas
Dec 2004, which in a short period ences. In 1995, he joined the faculty Analyzers (MGA), Radio Isotope
has grown to become a successful of the Department of Electrical Engi- Micropower Sources (RIMS), RF
leading design services and memo- neering and Computer Science at MEMS Improvement (RFMIP), Navi-
ry IP provider under his leadership. the University of Michigan, Ann gation-Grade Integrated Micro Gyro-
Prior to EMT, his industry experi- Arbor, to which he has very recent- scopes (NGIMG), and Micro Cryo-
ence comes from working at MoSys, ly returned after a 3.5 year leave in genic Coolers (MCC).
Texas Instruments and Paradigm Washington, DC, where he served
Technologies in the area of SRAM, as the MEMS Program Manager in Bram Nauta was
DRAM, Memory Compilers and SOI. the Microsystems Technology Office born in Hengelo,
Mr. Natarajan serves on the Adviso- (MTO) of DARPA. His technical The Netherlands, in
ry Board of Diablo Technologies interests at Michigan focus on micro 1964. In 1987 he
Inc, Solido Design Automation and electromechanical systems (MEMS) received the M.Sc.
HS Memory Inc. He also serves on and include integrated vibrating degree (cum laude)
various international conference micromechanical signal processors in Electrical Engi-
technical committees like ISSCC, and sensors, merged circuit/micro- neering from the University of
CICC, VLSI, ESSCIRC, ISLPED, SOC mechanical technologies, RF com- Twente, Enschede, The Nether-
and VLSI Symposium. He co- munication architectures, and inte- lands. In 1991 he received the
authored the book “SOI Design: grated circuit design and technolo- Ph.D. degree from the same uni-
Analog, Memory and Digital gy. Prof. Nguyen and his students at versity on the subject of analog
Design” – Dec 2001, Kluwer Acade- Michigan have garnered numerous CMOS filters for very high frequen-
mic Publishers and is also the recip- Best Paper Awards at prestigious cies. In 1991 he joined the Mixed-
ient of the IEEE Circuits and Systems conferences, including the 1998 and Signal Circuits and Systems Depart-
Outstanding Service Award'01. 2003 IEEE Int. Electron Devices ment of Philips Research, Eind-
Dr. Natarajan was named among Meetings, the 2004 IEEE Ultrasonics hoven, The Netherlands, where he
‘Top 40 under 40’ individuals by Symposium, the 2004 DARPA Tech worked on high speed AD con-
the Ottawa Business Journal in Conference, the 2004 IEEE Custom verters. From 1994 he led a
2005. This awards program honors Integrated Circuits Conference, the research group in the same depart-
individuals throughout the Ottawa 2005 IEEE Int. Solid-State Circuits ment, working on analog key
business community that embody Conference, and the 2005 IEEE Fre- modules. In 1998 he returned to
the region’s entrepreneurial spirit quency Control Symposium. the University of Twente, as full
and business acumen, while at the In 2001, Prof. Nguyen founded professor heading the IC Design
same time balancing community Discera, Inc., a company aimed at group in the MESA+ Research
and charitable involvement. He has commercializing communication Institute and department of Electri-
PEOPLE
cal Engineering. His current Research Center. Dr. Soyuer has best paper awards at GLSVLSI
research interest is analog CMOS authored numerous papers in the 2006, ISCA 2003 and SHAMAN
circuits for transceivers. He is also areas of analog, mixed-signal, RF, 2002. He is the chair of the VLSI
part-time consultant in industry microwave, and nonlinear elec- Systems and Applications Techni-
and in 2001 he co-founded Chip tronic circuit design, and he is an cal Committee (VSA-TC) of IEEE
Design Works. His Ph.D. thesis inventor and co-inventor of eight CAS, was general chair for ISLPED
was published as a book: Analog U.S. patents. Since 1997, he has 2006, technical program chair for
CMOS Filters for Very High Fre- been a technical program commit- ISLPED 2005, general chair for
quencies, Kluwer, Boston, MA, tee member of the International GLSVLSI 2003, and has been on
1993. He holds 8 patents in circuit Solid-State Circuits Conference technical committees for numer-
design and he received the "Shell (ISSCC). He was an Associate Edi- ous conferences.
Study Tour Award" for his Ph.D. tor of the IEEE Journal of Solid- He has been an Associate Editor
Work. From 1997-1999 he served State Circuits from 1998 through for the IEEE Transactions on Cir-
as Associate Editor of IEEE Trans- 2000, and was one of the Guest cuits and Systems Systems since
actions on Circuits and Systems -II; Editors for the December 2003 2004 and for the IEEE Transactions
Analog and Digital Signal Process- Special ISSCC Issue. Dr. Soyuer on VLSI Systems in 2001-2003. He
ing, and in 1998 he served as chaired the Analog, MEMS and has also been a Guest Editor for
Guest Editor for IEEE Journal of Mixed-Signal Electronics Commit- the IEEE Computer special issue
Solid-State Circuits. In 2001 he tee of the International Sympo- on Power-Aware Computing in
became Associate Editor for IEEE sium on Low Power Electronics December 2003 and a Distin-
Journal of Solid –State Circuits. and Design (ISLPED) in 2001. He guished Lecturer for the IEEE Cir-
was also a technical program com- cuits and Systems Society for 2004-
Mehmet Soyuer mittee member of the Topical 2005. Prof. Stan is a senior member
received the B.S. Meeting on Silicon Monolithic Inte- of the IEEE, a member of ACM,
and M.S. degrees in grated Circuits in RF Systems IET, and also of Eta Kappa Nu, Phi
electrical engineer- (SiRF) in 2004 and 2006. Dr. Kappa Phi and Sigma Xi.
ing from the Middle Soyuer is a senior member of IEEE.
East Technical Uni- Albert J.P. Theuwis-
versity, Ankara, Mircea R. Stan sen was born in
Turkey, in 1976 and 1978. He received the Ph.D. Maaseik, Belgium on
received the Ph.D. degree in elec- and M.S. degrees in December 20, 1954.
trical engineering from the Univer- Electrical and Com- He received the
sity of California at Berkeley in puter Engineering degree in electrical
1988, subsequently joining IBM at from the University engineering from
the Thomas J. Watson Research of Massachusetts at the K.U. Leuven, Belgium in 1977.
Center, Yorktown Heights, NY as a Amherst and the Diploma in Elec- His thesis work was based on the
Research Staff Member. His work tronics and Communications from development of supporting hard-
has involved high-frequency Politehnica University in Bucharest, ware around a linear CCD image
mixed-signal integrated circuit Romania. sensor.
designs, in particular monolithic Since 1996 he has been with the From 1977 to 1983, his work at
phase-locked-loop designs for Department of Electrical and Com- the ESAT-laboratory of the K.U.
clock and data recovery, clock puter Engineering at the Universi- Leuven focused on semiconductor
multiplication, and frequency syn- ty of Virginia, where he is now an technology for linear CCD image
thesis using silicon and SiGe tech- associate professor. Prof. Stan is sensors. He received the Ph.D.
nologies. At IBM Thomas J. Watson teaching and doing research in the degree in electrical engineering in
Research Center, Dr. Soyuer man- areas of high-performance low- 1983. His dissertation was on the
aged the Mixed-Signal Communi- power VLSI, temperature-aware implementation of transparent
cations Integrated-Circuit Design circuits and architecture, embed- conductive layers as gate material
group from 1997 to 2000. He was ded systems, and nanoelectronics. in the CCD technology.
the Senior Manager of the Commu- He has more than eight years of In 1983, he joined the Micro-
nication Circuits and Systems industrial experience, has been a Circuits Division of the Philips
Department from 2000 to 2006. In visiting faculty at UC Berkeley in Research Laboratories in Eind-
March 2006, he has been promot- 2004-2005, at IBM in 2000, and at hoven, the Netherlands as a mem-
ed to the position of Department Intel in 2002 and 1999. He has ber of the scientific staff. Since
Group Manager, Communication received the NSF CAREER award that time he was involved in
Technologies, at Thomas J. Watson in 1997 and was a co-author on research in the field of solid-state
PEOPLE
image sensing, which resulted in and coaches PhD students in their CMOS circuit design. Since 2006,
the project leadership of respec- research on CMOS image sensors. he is heading a department devel-
tively SDTV- and HDTV-imagers. In April 2002, he joined DALSA oping DRAM Core Circuitry at
In 1991 he became Department Corp. to act as the company’s Qimonda.
Head of the division Imaging Chief Technology Officer. In Sep- He has authored or co-authored
Devices, including CCD as well tember 2004 he retired as CTO and some 120 publications including
as CMOS solid-state imaging became Chief Scientist of DALSA book chapters, tutorials, invited
activities. Semiconductors. This shift allows papers, etc., and he gave lectures
He is author or coauthor of him to focus more on the field of and courses at universities. He
many technical papers in the solid- training and teaching solid-state served as a member of the techni-
state imaging field and issued sev- image sensor technology. cal program committees of the
eral patents. In 1988, 1989, 1995 In 2005 he founded ETETIS International Reliability Physics
and 1996 he was a member of the (European Technical Expert Team Symposium (IRPS), and of the
International Electron Devices on Image Sensors), a non-profit European Symposium on Reliabili-
Meeting paper selection commit- organization to promote European ty of Electron Devices, Failure
tee. He was co-editor of the IEEE R&D activities in the field of solid- Physics and Analysis (ESREF). He
Transactions on Electron Devices state image sensors. is a member of the technical pro-
special issues on Solid-State Image He is member of editorial board gram committees of the Interna-
Sensors, May 1991, October 1997 of the magazine “Photonics Spec- tional Solid-State Circuits Confer-
and January 2003, and of IEEE tra”, an IEEE Fellow and member ence (ISSCC), of the International
Micro special issue on Digital of SPIE. Electron Device Meeting (IEDM),
Imaging, Nov./Dec. 1998. and of the European Solid State
He acted as general chairman of Roland Thewes was Device Research Conference (ESS-
the IEEE International Workshop on born in Marl, Ger- DERC). Moreover, in 2004, he
Charge-Coupled Devices and many, in 1962. He joined the IEEE EDS VLSI Technol-
Advanced Image Sensors in 1997 received the Dipl.- ogy and Circuits Committee.
and in 2003. He is member of the Ing. degree and the Dr. Thewes is a member of the
Steering Committee of the afore- Dr.-Ing. degree in IEEE and of the German Associa-
mentioned workshop and founder Electrical Engineer- tion of Electrical Engineers (VDE).
of the Walter Kosonocky Award, ing from the University of Dort-
which highlights the best paper in mund, Dortmund, Germany, in Ken Uchida was
the field of solid-state image sensors. 1990 and 1995, respectively. From born in Cambridge,
During several years he was a 1990-1995, he worked in a cooper- MA in 1971. He
member of the technical commit- ative program between the Siemens received B.S. degree
tee of the European Solid-State Research Laboratories in Munich in physics, M.S. and
Device Research Conference and and the University of Dortmund in Ph.D. degrees in
of the European Solid-State Circuits the field of hot-carrier degradation applied physics all
Conference. in analog CMOS circuits. from the University of Tokyo,
Since 1999 he is a member of Since 1994 he was with the Tokyo, Japan, in 1993, 1995, and
the technical committee of the Research Laboratories of Siemens 2002, respectively. In 1995, he
International Solid-State Circuits AG and Infineon Technologies, joined the Research and Develop-
Conference. For the same confer- where he was active in the design ment Center, Toshiba Corporation,
ence he acted as secretary, vice- of non-volatile memories and in Kawasaki, Japan. He has studied
chair and chair in the European the field of reliability and yield of carrier transport properties in
ISSCC Committee and he is a mem- analog CMOS circuits. From 1997- nano-scaled devices such as Sin-
ber of the overall ISSCC Executive 1999, he managed projects in the gle-Electron Devices, Schottky
Committee. fields of design for manufacturabil- source/drain MOSFETs, Ultrathin-
In 1995, he authored a textbook ity, reliability, analog device per- body SOI MOSFETs, Strained Silicon
“Solid-State Imaging with Charge-Cou- formance, and analog circuit MOSFETs, and Carbon Nanotube
pled Devices”. In 1998 he became an design. From 2000-2005, he was Transistors. He developed the
IEEE Distinguished Lecturer. responsible for the Lab on Mixed- physics-based compact model of
In March 2001, he became part- Signal Circuits of Corporate single-electron transistors and the
time professor at the Delft Univer- Research of Infineon Technologies design scheme of single-electron
sity of Technology, the Nether- focusing on CMOS-based bio-sen- logic circuits. He investigated the
lands. At this University he teach- sors, device physics-related circuit physical mechanisms of mobility
es courses in solid-state imaging design, and advanced analog enhancement in uniaxial stressed
PEOPLE
MOSFETs and clarified the impor- ty of Melbourne. He Loops for microprocessor clock-
tance of the effective mass change. received the Ph.D. in ing and high speed I/O and
In addition, he experimentally Electrical Engineer- mixed-signal RF CMOS circuits
demonstrated the effectiveness of ing from the Univer- for communications.
subband structure engineering in sity of California, He was a member of the Pro-
ultrathin-body SOI MOSFETs. Dr. Berkeley, in 1978, gram Committee for the Sympo-
Uchida is a member of the Japan where he was one of sium on VLSI Circuits from 1991 to
Society of Applied Physics and IEEE the pioneers of the switched capaci- 1996, serving as the Program Com-
Electron Devices Society. He won tor filter in MOS technology. mittee Co-Chair/Chairman in 1995
the 2003 IEEE EDS Paul Rappaport In 1983 he joined the Technol- and 1996, and the Symposium Co-
Award for his work on single-elec- ogy Development group at Intel Chair/Chairman in 1997/1998. He
tron devices and 2005 Young Scien- Corporation, where he is cur- currently serves on the Executive
tist Award from Ministry of Educa- rently an Intel Senior Fellow and Committee of the VLSI Symposia.
tion, Culture, Sports, Science and Director of Advanced Circuits Since 1992 he has been a member
Technology of Japan. and Technology Integration. His of the ISSCC Technical Program
technical contributions have Committee, serving as the Digital
Ian Young was born in Melbourne, been recognized in the design of Subcommittee Chairman from
Australia. He received the BSEE in DRAMs and SRAMs, process 1997 through 2003, Technical Pro-
1972, and the M. Eng. Science in technology development and gram Committee Vice-chair in 2004
1975, specialized in Microwave microprocessor implementations, and Chair in 2005. Dr Young is an
Communications, from the Universi- the design of Phase Locked IEEE Fellow.
TOOLS:
How to Write Readable Reports and Winning
Proposals
Part 2: Structure Your Reports to Please Your Reader
By Peter and Cheryl Reimold, www.allaboutcommunication.com
PEOPLE
want to evaluate the validity of your them only that. sure the dog is outside the
approach. It follows a logical pro- The approach/method opens kitchen.
gression, from an overview (summa- with a summary of the key points of The appendixes consist of materi-
ry) to the background (introduc- the method—points that could al that is not critical for understand-
tion), to your method, to a discus- interest both management and tech- ing your report but might be useful
sion of anything interesting that nical readers. The rest of the section in the future. Make sure that each
occurred, and then to your results. tells your technical readers how you page has enough information on it
The conclusions and recommenda- proceeded. to make it self-explanatory.
tions grow directly out of the results. The discussion requires informa- Finally, here are two points that
The management format uses tive subheadings. Use a clear sub- apply to all sections:
the same categories but rearranges head for each topic you explore. 1. In each section and subsection,
them to allow general management Open each topic with a summary move from the most to the
readers to get the information they paragraph that states your main least important information,
want in the beginning, without hav- message. Then consider which read- unless some other logical
ing to read detailed sections. ers will be most interested in that scheme (e.g., chronology, left
You may not always need a sec- topic. Note what questions they to right, top to bottom, causal
tion on method; this depends on the would have and try to answer them. sequence) clearly makes the
nature of your work and your read- If you have more to tell, state it after section easier to understand.
ership. You may decide to give a you have answered their questions, 2. Once you introduce several
more specific title to the discussion or put it in an appendix. items in a certain order, stick to
section if it covers only one topic. The results state simply what that order in the rest of the
Otherwise, these sections work for you found. It is best to present them report.
most technical reports. as a bulleted list. (This stops you Follow these simple rules, and
The summary provides the from adding long interpretations, your readers will thank you for
essence of your report, preferably in which don’t belong here.) For making your report easily accessi-
nontechnical terms. It should give example: ble and readable.
general answers to all your readers’ • The five-pound roast was no Cheryl and Peter Reimold have
most urgent questions, but the pri- longer on the counter. been teaching communication
mary reader here is usually the • The dog was under the table, skills to engineers, scientists, and
executive. Think broad brush looking unwell. business people for 20 years. Their
strokes. A good outline for the The conclusions are your deduc- latest book, “the Short Road to Great
opening summary is the PAW: Pur- tions from the results. They, too, Presentations” (Wiley, 2003), is
pose, Achievement, What Next. For work well as a bulleted list. They available in bookstores and from
a discussion of the PAW, see the first should grow clearly out of the Amazon.com. Their consulting
column in this series (May/June results. For example: firm, PERC Communications (1
2002 Newsletter, p. 10). • The dog ate five pounds of raw 914 725 1024), perccom@aol.com),
The introduction explains what beef. offers business consulting and writ-
led to the work you did. It is an The recommendations state what ing services as well as customized
amplification of the purpose stated to do next. They should grow direct- in-house courses on writing, pres-
in the summary. To keep your intro- ly out of your conclusions. For entation skills, and on-the-job com-
duction brief and interesting, consid- example: munication skills. Visit their Web
er your readers. How much back- • When preparing roast beef, site at www.allaboutcommunica-
ground do they want and need? Tell close the kitchen door, making tion.com.”
CHAPTERS
CHAPTERS
From left, Kong-Pang Pun of The Chinese University of Hong Kong, Voijin Oklobdzija of University of Sydney , Betty
Prince of Memory Strategies International, C.K. Ken Yang of UCLA, Yong Ping Xu of the National University of Singapore,
Zhihua Wang of Tsinghua University, Ting-Ao Tang of Fudan University, Richard C. Jaeger of Auburn University, Anne
O’Neill of IEEE SSCS, Andy Jinyong Chung of Puhang University of Science and Technology, Jan Van der Spiegel of Uni-
versity of Pennsyvlania, C. K. Wang of National Taiwan University, Nicky Lu, of Etron Technology, Shin Il Lim of Korea’s
Ministry of Commerce, Industry and Energy, and Hsung- Hsien Lin of National Taiwan University.
CHAPTERS
CHAPTERS
CHAPTERS
Herman Pang (far left) and Mikail Gilsdor (second from right, second row) video taped Dr. Razavi’s talk on 1 August, 2006.
Dr. Razavi is eighth from right, front row. A. Loke and Tin Tin Wee, Chapter Secretary and Webmaster, are to his right.
Collins has quickly become a having been overwhelmed by his tant places and undoubtedly busy
hotbed of leading-edge micro- responsibilities at LSI Logic. We schedules to support our humble
processor activity with AMD recent- wish to extend our best wishes to service to the northern Colorado
ly opening its brand new Mile High him and heartfelt thanks for his design community. Finally, we
Design Center to match Intel’s instrumental leadership and com- welcome Bruce Doyle who recent-
established presence in Itanium mitment to grow this young chap- ly joined the existing officer team.
development. ter for several years soon after its Please visit ewh.ieee.org/r5/den-
We regret to announce that Past inception in late 2002. We are also ver/sscs/ for more information,
Chair Dr. Don McGrath decided to grateful to our past speakers, espe- including past presentation slides,
step aside from chapter activities, cially those who traveled from dis- about our chapter events.
CONFERENCES
The Second A-SSCC Considers Challenges for the e-Life
ment and demonstration of the
fabricated integrated circuit. The
papers, co-authors, and abstracts
are listed below.
CONFERENCES
(2) A 0.98 to 6.6 GHz Tunable exhibit 0.98-to-6.6GHz continuous the device achieves 6 bits of reso-
Wideband VCO in a 180 nm frequency tuning with -206dBc/Hz lution at 1.5 MS/s output rate,
CMOS Technology for Reconfig- of FoMt which is fabricated by using while drawing 28 microamps from
urable Radio Transceiver a 0.18um CMOS process. The fre- a low 0.5 V supply, corresponding
Yusaku Ito, Hirotaka Sugawara, quency tuning range (FTR) is 149%, to a Figure of Merit (FOM) of
Kenichi Okada and Kazuya Masu and the chip area is 800µm x 540µm. .25pJ/conversion step. Low-density
(Tokyo Institute of Technology) metal5-metal6 capacitors guarantee
(3) A 1.5MS/s 6-bit ADC with feedback DAC linearity while min-
This paper proposes a novel wide- 0.5V supply imizing input capacitance, while
band voltage-controlled oscillator Simone Gambini and Jan Rabaey the use of a passive sample and
(VCO) for multi-band transceivers. (University of California at Berkeley) hold, combined with a class-AB
The proposed VCO has a core LC- comparator reduce analog power
VCO and a tuning-range extension A moderate resolution analog-to- dissipation to 4 microWatts (30% of
circuit, which consists of switches, a digital converter targeting wireless the total). The analog core is oper-
mixer, dividers, and variable gain sensor networks applications is ational for supply values as low as
combiners with a spurious rejection presented. Employing a succes- .3V, even though sampling rate is
technique. The experimental results sive-approximation architecture, reduced to 175kS/s.
CONFERENCES
CONFERENCES
Semiconductor), Bram Nauta (Uni- ous industry experience may be tion in each IC generation, they
versity of Twente, The Nether- more difficult to attain in the must also operate under physical
lands), Robert Bogdan Staszewski future, simply because revenue constraints that, until recently,
(Texas Instruments), and Michel S. growth of the semiconductor IC have been secondary in the digital
J. Steyaert (Katholieke Universiteit, industry (as a whole) has slowed world.
Leuven, Belgium) will each give a since 2000, and will continue to do From the advent of the first ana-
lecture. so. Additionally, the penetration of log IC, analog designers have
In this one-day session they will the CMOS-logic market by the exploited the potential of process
explain the fundamental limitations foundry industry cannot continue technology to develop circuits that
faced by those designing critical unabated indefinitely; saturation minimize the impact of variation in
communication system blocks such should be anticipated in the future. process parameters on product
as amplifiers, mixers, data convert- The second challenge for the performance. While process scaling
ers, and phase-locked loops in foundry industry is to maintain has enabled the development of a
nanometer CMOS, and present profitability: The growth of the wide variety of products, from cell-
state-of-the-art circuit and system- industry has attracted many com- phones to advanced medical-imag-
level techniques for addressing panies to offer foundry services. ing systems, the success of these
these limitations. A DVD including Consequently, competition be- products depends in large measure
(1) The visuals of the four Short- tween these companies increases on their ease of use, and seamless
Course presentations in PDF for- the potential for commoditization connection to wireless and wired
mat; (2) Audio recordings of the of foundry services, where many networks. Analog and mixed-signal
presentations along with written foundries, with apparently similar subsystems, including display driv-
transcriptions; (3) Bibliographies of (but substantively different) serv- ers, and WLAN and cellular radios,
background papers for all four pre- ices, compete on the basis of support these critical interfaces.
sentations; and (4) PDF copies of price alone. The downward scaling of supply
selected relevant background The foundry industry must voltage in deep submicron CMOS
material and important papers in respond to these challenges by two (now at 1V), may limit dynamic
the field (10 to 20 papers per pres- means: expanding into new IC- range, forcing some analog func-
entation) may be purchased at reg- product markets enabled by the tions to be implemented on other
istration time, or at the on-site reg- cost reduction and performance processes, but it has also enabled
istration desk. A substantial price increases resulting from technology new circuit architectures that gain
reduction is offered to those who scaling; and by penetrating seg- back dynamic range.
attend the course. ments of the IC market that are cur- The creative combination of
rently not involved in foundry rela- process, design, and system archi-
Plenary Session tionships, by broadening the range tecture in providing robust solu-
At the opening of the conference, of technologies that are offered. In tions for demanding applications,
three invited speakers from indus- the future, circuit designers can will prove to be even more crucial
try will examine key considera- expect, therefore, to be able to in the future. Such solutions will
tions and offer roadmaps for tech- access process technologies tuned be essential in meeting the chal-
nical innovation. in various ways: For memory, ana- lenges posed by the physical reali-
“Foundry Future: Challenges in log, high-performance-logic, or ties of deep- submicron design in
the 21st Century” will be the topic of image-sensor applications, as well achieving gigahertz speeds, mini-
Morris Chang, Founding Chairman, as for CMOS logic. mizing power consumption, and
Taiwan Semiconductor Manufactur- Lewis Counts, Vice-President of integrating multiple functions in
ing Corporation, Hsinchu, Taiwan. Analog Technology and Fellow smaller packages.
The foundry business-model is Analog Devices, Wilmington, MA, Joel Hartmann, Director, Crolles2
an important positive influence on will discuss “Analog and Mixed-Sig- Alliance, STMicroelectronics, Crolles,
the health of the overall IC indus- nal Innovation: The Process-Circuit- France will explore the intricate bal-
try. Therefore, it is critically neces- System-Application Interaction.” ance that will increasingly be
sary to scan the future for potential Innovation in analog and mixed- required among process, device,
issues that might inhibit foundry- signal electronics becomes increas- circuit, and system aspects of
industry growth. ingly more important to the con- design in “Toward a New Nanoelec-
In order to ensure continued tinued growth of the IC industry. tronic Cosmology.”
expansion, the foundry industry While technologists working in the Gone forever are the days of
must address two significant chal- analog and mixed-signal arena smooth roadmap scaling, with its
lenges: The first and foremost chal- share, with their digital counter- more-or-less-simple design rules,
lenge is business growth: We antic- parts, the overarching goal of adequate supply voltages, and
ipate that growth matching previ- reducing power and cost-per-func- unimpeded circuit shrinkage. As
CONFERENCES
scaling moved ahead to nanometer causes is urgently required to guide (GDfM) unifies current Design-for-
dimensions, things changed: the right choices at all levels. Con- Manufacturability (DfM), Manufac-
Devices became more difficult to ceptually, such understanding will turing-for-Design (MfD), and
predict, and global performance lead to acceptable levels of perform- Design-for-Yield (DfY), coupling
degraded due to leakage and dis- ance, manufacturability, and yield, at all of the above-mentioned dimen-
persion. One of the consequences ever-decreasing feature sizes. Mean- sions within a new space where
of this deteriorating situation has while, the increased parameter vari- their inter-dependence is revealed
been that increased parameter ability observed today, as one tech- and exploited. Tightly coupled
variability has led to a significant nology node invites the next, reveals physical-electrical-mechanical-
mismatch between simulation and the tight coupling of the four seem- process modeling and simulation,
actual measurement results, at all ingly- independent dimensions of will allow early detection of the
levels. While many of these effects design, motivating the need to con- impact of design choices at all lev-
have already been well known to figure a new nano-cosmology, one els. This creates a 4D knowledge
analog designers, the surprise, in which global optimization results continuum reminiscent of the ideas
now, is that they are more broadly only from an intricate balance of General Relativity, ones
important, even in digital design, between the Process, Device, Cir- extremely rich in consequences for
where previously available noise cuit, and System aspects of design. the future of nanoelectronic design.
margins have almost disappeared. In this new nano-cosmology, the More information about ISSCC
Clearly, deep understanding and emerging concept of Generalized 2007 may be found at:
modeling of all underlying physical D e s i g n - f o r- M a n u f a c t u r a b i l i t y http://www.isscc.org/isscc/.
CONFERENCES
SSCS NEWS
SSCS NEWS
the IEEE. These activities range from monolithic cir- effective January 2006. Within IEEE Technical Activi-
cuits to large information-processing systems. Within ties, a council like CEDA represents an organization
the context of electronic systems, computer-aided with member societies. CEDA has six IEEE member
design (CAD) was synonymous with circuit simulation societies: Antennas and Propagation; Circuits and Sys-
when it started as a discipline in the ‘60s. Now, CAD tems; Computer; Electron Devices; Microwave Theory
deals with a much broader set of concerns. Those and Techniques; and Solid-State Circuits. As with any
issues continue to evolve with technological advances IEEE technical activity, the ultimate goal is to advance
in materials, processing, devices, and circuits. Gener- the profession through a variety of technical activities
ally, they’re put under the umbrella of electronic from conferences and publications to standards. To
design automation (EDA). serve members who are spread across various mem-
On one side of the spectrum, the physical design of ber societies, CEDA brings together several important
electronic circuits requires both deep knowledge and resources. It provides conferences and publications to
interaction with specialists on solid-state circuits and its technical community. As of this writing, the co-
more broadly electronic devices. Yet the ubiquitous sponsored conferences include DAC, ICCAD, and
presence of programmable processor cores in integrated Design and Test in Europe (DATE). CEDA enjoys spe-
circuits has shifted much CAD work into the design of cial relationships with focused technical activities,
embedded software and hardware/software co-design-- such as DATC and TTTC in the Computer Society and
areas that are traditionally covered by computer scien- CANDE within the Circuits and Systems Society.
tists. By combining theory and practice, CAD is a key CEDA also is participating in the DARPA/MTO activi-
technology that boasts its own thriving industry. It also ties in building the roadmap for electronic systems
is a driver for the much larger semiconductor and elec- Rajesh K. Gupta, the Vice President of Publications
tronic systems industry. It was natural for such an activ- for CEDA says, “Clearly, we’re pleased to receive such
ity to have a diversified footprint within the IEEE as a broad support and community momentum toward
technical organization. The range of CAD activities building this new Council. We also are humbled by
enabled the IEEE to benefit from the significant cross- the challenges facing the community, which must
fertilization of ideas from various mathematical and engi- match the pace of innovation by rapidly drawing new
neering optimizations and practices. As an organized talent and entrepreneurship to the field. We need to
activity, however, it was much harder for the organiza- engender technical activities that excite and challenge
tion to serve its members with information on interrelat- our audience and readership to new capabilities and
ed advances and publications. The recognition of major opportunities. From this promising start, we hope to
advances was often secondary to major society activities. build years of exciting innovation and invention in
CEDA was ratified by IEEE as a Technical Council electronic design automation.”
SSCS NEWS
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