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ESD 502 Analog CMOS VLSI Design

Test 3 (Marks: 25). September 27, 2018, 9.30 am – 12.30 pm.

Do the work in the answer-book. Write the final answers in the question VDD
paper.
M3
1. Figure 1 shows an interesting modification to the common-gate amplifier. Io VG3
Assume that the current source (Io) is ideal, that all transistors are in saturation vo
and have equal gm and ro values. (7) M1
(a) Find expressions for the small-signal voltage gain, and the input resistance.
M2
vo/vi = (gm2ro2 + gmro + 1) / 2 Rin
vi
Rin = ro / (vo/vi)
Figure 1
(b) If gm = 2 mA/V and ro = 40 k, determine numerical values for the above
two quantities.
3V
vo/vi = __3240__ Rin = __12.3_ 
VG4 M4
2. In the telescopic cascode shown in Fig. 2, the transistors have Vtn = –Vtp = 0.4 V,
nCox(W/L) = pCox(W/L) = 50 mA/V2,  =  = 0. VG1 = 0.6 V and VG3 = 2 V. VS3
Find ID, VS2, VS3 and Vo for each of the three conditions given below: (9) VG3 M3
VO
VG2 ID
VG4 (V) VS2 (V) VS3 (V) VO (V) VG2 M2
(V) (mA)
(a) 0.6 – VS2
1 2.4 1 0.4 2.6 M1
2.4 VG1
(b) 1 2.2 1 0.4 2.9464 2.9084
(c) 0.2 – 0.2083 Figure 2
3 2.4 1 2.6
2.3172 – 2.4

You must verify your answers by finding ID from the drain current equations of the individual transistors.
Note that if a transistor is in triode, then the precision required to obtain correct answers has to be four
decimal digits. Note also that for some of the cases, only a range of voltages is possible to specify, not a
unique value.

3. Design the common-source amplifier of Fig. 3, with the input at the gate of M1. The MOSFETs have:
Vtn = –Vtp = 0.4 V, nCox = 0.4 mA/V2, pCox = 0.2 mA/V2,  = 0 and  = (0.03/L) /V where L is in m.
You are also given: VG1 = 0.5 V and VG2 = 2.3 V. You need to meet the following specifications: (9)

|Voltage gain| ≥ 180 ID ≥ 1 mA 3V

(W1L1+ W2L2) must be the minimum possible.
VG2 M2
Write your final designed values here: vO
L1 = _0.43_ m L2 = _0.7_ m W1 = _220_ m W2 = __77.8_ m VG1 M1

Figure 3